Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Mixer Pump”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Santa Barbara Desalination Digital Twin Technical Report

A digital twin is a computer model that has sufficient breadth and fidelity to enable diagnostic and predictive analyses for outputs of interest. We have constructed a digital twin of the SB desal plant using the ProteusLib software developed for NAWI under task 4.2.2, and specifically the ProteusLib models of pumps, filters, mixers, splitters, and reverse osmosis units and a seawater property model. The steps needed to configure this digital twin with the real conditions of the SB desal plant are: (1) Data reconciliation, which is gathering the data and plant connectivity and ensure that all relevant values are present and in the correct units and validating the data using material and energy balances, and correct for errors, gaps, or deviations; (2) Parameter estimation, which is matching model parameters with data from previous step, filling missing parameters with initial estimates, then iteratively refining estimated values. Once we completed the digital twin, we used the optimization capabilities of ProteusLib to compute outputs of interest over a chosen range of inputs. The primary output of interest to the owners of the plant is its specific energy consumption (kWh/acre-foot). The remainder of this report will provide more detail on the data reconciliation, parameter estimation, and analyses we performed.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2023

Evaluation of High Level Waste Sludge Processing Behavior

The U.S. Department of Energy’s (DOE) Hanford Site has 177 underground storage tanks that contain wastes from past nuclear fuel reprocessing and waste-management operations. Over 20% of this waste is in the form of an insoluble sludge that will require slurry modification before its transfer to the Waste Treatment and Immobilization Plant (WTP). Specific WTP acceptance criteria for waste feed delivery describe the physical and chemical characteristics of the waste that must be met before the waste is transferred to the WTP. One challenging requirement relates to the undissolved solids (UDS) composition in a waste feed because the waste contains solid particles that settle, and their concentration and relative proportion can change during the transfer of the waste in individual batches. A key uncertainty is the ability to transfer and mix wastes with large variations in UDS concentrations and resulting settling rates. To address this uncertainty, a number of small scale mixing and settling tests have been conducted to determine the mobilization performance of variable chemistry simulants. Comparison of the size and density of the particulate for each simulant to that of southeast area Hanford sludge was made using metrics for particle mobilization, suspension, settling, and pipeline transfer where dependance on particle size and density may be different, including: 1. Settling velocity, 2. Critical shear stress for erosion, 3. Just-suspended impeller speed, and 4. Pipeline critical transport velocity. Existing high-level waste sludge data has shown the effect that increasing Al concentration has on resulting settled solids. This differential settling of particles in the sludge has the possibility of resulting in solids segregation during feed preparation and uneven particle distribution during pipeline transportation or mixer jet pump operations. Understanding the predictive capabilities of HLW solids settling and transport as well as potential remedies for addressing disparate sludge behaviors can help provide technical guidance during HLW flowsheet planning.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
NASA NTRS2016

THz Limb Sounder (TLS) for Lower Thermospheric Wind, Oxygen Density, and Temperature

Neutral winds are one of the most critical measurements in the lower thermosphere and E region ionosphere (LTEI) for understanding complex electrodynamic processes and ion-neutral interactions. We are developing a high-sensitivity, low-power, noncryogenic 2.06 THz Schottky receiver to measure wind profiles at 100-140 km. The new technique, THz limb sounder (TLS), aims to measure LTEI winds by resolving the wind-induced Doppler shift of 2.06 THz atomic oxygen (OI) emissions. As a transition between fine structure levels in the ground electronic state, the OI emission is in local thermodynamic equilibrium(LTE) at altitudes up to 350km. This LTE property, together with day-and-night capability and small line-of-sight gradient, makes the OI limb sounding a very attractive technique for neutral wind observations. In addition to the wind measurement, TLS can also retrieve [OI] density and neutral temperature in the LTEI region. TLS leverages rapid advances in THz receiver technologies including subharmonically pumped (SHP)mixers and Schottky-diode-based power multipliers. Current SHP Schottky receivers have produced good sensitivity for THz frequencies at ambient environment temperatures (120-150 K), which are achievable through passively cooling in spaceflight. As an emerging technique, TLS can fill the critical data gaps in the LTEI neutral wind observations to enable detailed studies on the coupling and dynamo processes between charged and neutral molecules.

wind profiles↗
NASA NTRS2012

670-GHz Schottky Diode-Based Subharmonic Mixer with CPW Circuits and 70-GHz IF

GaAs-based, sub-harmonically pumped Schottky diode mixers offer a number of advantages for array implementation in a heterodyne receiver system. Since the radio frequency (RF) and local oscillator (LO) signals are far apart, system design becomes much simpler. A proprietary planar GaAs Schottky diode process was developed that results in very low parasitic anodes that have cutoff frequencies in the tens of terahertz. This technology enables robust implementation of monolithic mixer and frequency multiplier circuits well into the terahertz frequency range. Using optical and e-beam lithography, and conventional epitaxial layer design with innovative usage of GaAs membranes and metal beam leads, high-performance terahertz circuits can be designed with high fidelity. All of these mixers use metal waveguide structures for housing. Metal machined structures for RF and LO coupling hamper these mixers to be integrated in multi-pixel heterodyne array receivers for spectroscopic and imaging applications. Moreover, the recent developments of terahertz transistors on InP substrate provide an opportunity, for the first time, to have integrated amplifiers followed by Schottky diode mixers in a heterodyne receiver at these frequencies. Since the amplifiers are developed on a planar architecture to facilitate multi-pixel array implementation, it is quite important to find alternative architecture to waveguide-based mixers.

Chattopadhyay, Goutam↗
NASA NTRS1978

Research in millimeter wave techniques

During the past six months, efforts on this project have been devoted to: (1) continuation of construction and testing of a 6 GHz subharmonic mixer model with extension of the pumping frequency of this mixer to omega sub s/4, (2) construction of a 183 GHz subharmonic mixer based on the results of tests on this 6 GHz model, (3) ground-based radiometric measurements at 183 GHz, (4) fabrication and testing of wire grid interferometers, (5) calculations of reflected and lost power in these interferometers, and (6) calculations of the antenna temperature due to water vapor to be expected in down-looking radiometry as a function of frequency. Significant events during the past six months include: (1) Receipt of a 183 GHz single-ended fundamental mixer, (2) attainment of 6 db single sideband conversion loss with the 6 GHz subharmonic mixer model by using a 1.5 GHz (omega sub s/4) pump frequency, (3) additional ground-based radiometric measurements and (4) derivation of equations for reflection and loss for wire grid interferometers.

Mcmillan, R. W.↗
NASA NTRS2013

An All-Solid-State, Room-Temperature, Heterodyne Receiver for Atmospheric Spectroscopy at 1.2 THz

Heterodyne receivers at submillimeter wavelengths have played a major role in astrophysics as well as Earth and planetary remote sensing. All-solid-state heterodyne receivers using both MMIC (monolithic microwave integrated circuit) Schottky-diode-based LO (local oscillator) sources and mixers are uniquely suited for long-term planetary missions or Earth climate monitoring missions as they can operate for decades without the need for any active cryogenic cooling. However, the main concern in using Schottky-diode-based mixers at frequencies beyond 1 THz has been the lack of enough LO power to drive the devices because 1 to 3 mW are required to properly pump Schottky diode mixers. Recent progress in HEMT- (high-electron-mobility- transistor) based power amplifier technology, with output power levels in excess of 1 W recently demonstrated at W-band, as well as advances in MMIC Schottky diode circuit technology, have led to measured output powers up to 1.4 mW at 0.9 THz. Here the first room-temperature tunable, all-planar, Schottky-diode-based receiver is reported that is operating at 1.2 THz over a wide (≈20%) bandwidth. The receiver front-end (see figure) consists of a Schottky-diode-based 540 to 640 GHz multiplied LO chain (featuring a cascade of W-band power amplifiers providing around 120 to 180 mW at W-band), a 200-GHz MMIC frequency doubler, and a 600-GHz MMIC frequency tripler, plus a biasable 1.2-THz MMIC sub-harmonic Schottky-diode mixer. The LO chain has been designed, fabricated, and tested at JPL and provides around 1 to 1.5 mW at 540 o 640 GHz. The sub-harmonic mixer consists of two Schottky diodes on a thin GaAs membrane in an anti-parallel configuration. An integrated metal insulator metal (MIM) capacitor has been included on-chip to allow dc bias for the Schottky diodes. A bias voltage of around 0.5 V/diode is necessary to reduce the LO power required down to the 1 to 1.5 mW available from the LO chain. The epilayer thickness and doping profiles have been specifically optimized to maximize the mixer performance beyond 1 THz. The measured DSB noise temperatures and conversion losses of the receiver are 2,000 to 3,500 K and 12 to 14 dB, respectively, at 120 K, and 4,000 to 6,000 K and 13 to 15 dB, respectively, at 300 K. These results establish the state-of-the-art for all-solid-state, all-planar heterodyne receivers at 1.2 THz operating at either room temperature or using passive cooling only. Since no cryogenic cooling is needed, the receiver is eminently suited to atmospheric heterodyne spectroscopy of the outer planets and their moons.

Siles, Jose V.↗
NASA NTRS1984

Packed Alumina Absorbs Hypergolic Vapors

Beds of activated alumina effective as filters to remove hypergolic vapors from gas streams. Beds absorb such substances as nitrogen oxides and hydrazines and may also absorb acetylene, ethylene, hydrogen sulfide, benzene, butadiene, butene, styrene, toluene, and xoylene. Bed has no moving parts such as pumps, blowers and mixers. Reliable and energy-conservative. Bed readily adapted to any size from small portable units for use where little vapor release is expected to large stationary units for extensive transfer operations.

Thomas, J. J.↗
NASA NTRS1975

Operation of the SUPARAMP at 33GHz

A 9mm degenerate parametric amplifier was constructed using a linear, series array of unbiased Josephson junctions as the active, nonlinear element. A balanced diode mixer was used as a synchronous detector, with a single source serving both as the pump and as the mixer local oscillator. A stable, net gain of 15 dB in an instantaneous bandwith (FWHM) of 3.4 GHz was achieved. A system noise temperature of 220 K + or - 5 K (DSB) was measured with a SUPARAMP contribution of only 20 K x or - 10 K. Output saturation was observed and complicates the interpretation of the noise temperature measurements and may render them upper limits. A comparison was made with the results of an earlier 3 cm suparamp. The data is in substantial agreement with theoretical predictions.

Chiao, R. Y.↗
NASA NTRS1976

Operation of the SUPARAMP at 33 GHz

A 9-mm degenerate parametric amplifier has been constructed using a linear series array of unbiased Josephson junctions as the active nonlinear element. A balanced diode mixer was used as a synchronous detector, with a single source serving both as the pump and as the mixer local oscillator. A stable net gain of 15 dB in an instantaneous bandwidth (FWHM) of 3.4 GHz has been achieved. A system noise temperature of 220 plus or minus 5 K (DSB) was measured with a SUPARAMP contribution of only 20 plus or minus 10 K. Output saturation has been observed. This complicates the interpretation of noise-temperature measurements and may render them upper limits. Comparison is made with the results of an earlier 3-cm SUPARAMP.

Chiao, R. Y.↗
NASA NTRS1979

Shot-noise in resistive-diode mixers and the attenuator noise model

The representation of a pumped exponential diode, operating as a mixer, by an equivalent lossy network, is reexamined. It is shown that the model is correct provided the network has ports for all sideband frequencies at which (real) power flow can occur between the diode and its embedding. The temperature of the equivalent network is eta/2 times the physical temperature of the diode. The model is valid only if the series resistance and nonlinear capacitance of the diode are negligible. Expressions are derived for the input and output noise temperature and the noise-temperature ratio of ideal mixers. Some common beliefs concerning noise-figure and noise-temperature ratio are shown to be incorrect.

Kerr, A. R.↗
NASA NTRS2010

An Integrated 520-600 GHz Sub-Harmonic Mixer and Tripler Combination Based on GaAs MMIC Membrane Planar Schottky Diodes

We present here the design, development and test of an integrated sub-millimeter front-end featuring a 520-600 GHz sub-harmonic mixer and a 260-300 GHz frequency tripler in a single cavity. Both devices used GaAs MMIC membrane planar Schottky diode technology. The sub-harmonic mixer/tripler circuit has been tested using conventional machined as well as silicon micro-machined blocks. Measurement results on the metal block give best DSB mixer noise temperature of 2360 K and conversion losses of 7.7 dB at 520 GHz. Preliminary results on the silicon micro-machined blocks give a DSB mixer noise temperature of 4860 K and conversion losses of 12.16 dB at 540 GHz. The LO input power required to pump the integrated tripler/sub-harmonic mixer for both packages is between 30 and 50 mW.

Monolithic Microwave Integrated Circuit, (MMIC)↗
NASA NTRS2011

An Integrated 520-600 GHz Sub-Harmonic Mixer and Tripler Combination Based on GaAs MMIC Membrane Planar Schottky Diodes

We present here the design, development and test of an integrated sub-millimeter front-end featuring a 520-600 GHz sub-harmonic mixer and a 260-300 GHz frequency tripler in a single cavity. Both devices used GaAs MMIC membrane planar Schottky diode technology. The sub-harmonic mixer/tripler circuit has been tested using conventional machined as well as silicon micro-machined blocks. Measurement results on the metal block give best DSB mixer noise temperature of 2360 K and conversion losses of 7.7 dB at 520 GHz. Preliminary results on the silicon micro-machined blocks give a DSB mixer noise temperature of 4860 K and conversion losses of 12.16 dB at 540 GHz. The LO input power required to pump the integrated tripler/sub-harmonic mixer for both packages is between 30 and 50 mW

passively cooled detectors↗
NASA NTRS1992

All-solid-state radiometers for environmental studies to 700 GHz

We report results with an all-solid-state radiometer for measurements of the ClO molecule at 649 GHz. The project is part of a program to provide low-noise, low-weight, low-power radiometers for space operation, and special effort has been expended on the development of high-efficiency solid-state frequency multipliers and Schottky-barrier mixers with low local oscillator power requirements. The best measured system noise temperature was 1750 K with the mixer and preamplifier cooled to 77 K. The mixer diode was easily pumped into saturation, indicating that the design has excellent prospects of operating at higher frequencies - our present design goal being 1 THz. We comment on the principal design features of such systems and will report on stratospheric measurements performed with this system.

Zimmermann, Ralph↗
NASA NTRS2015

Ion Chromatography-on-a-chip for Water Quality Analysis

We report progress towards developing a Micro-Electro-Mechanical Systems (MEMS)- based ion chromatograph (IC) for crewed spacecraft water analysis. This IC-chip is an offshoot of a NASA-funded effort to produce a high performance liquid chromatograph (HPLC)-chip. This HPLC-chip system would require a desalting (i.e. ion chromatography) step. The complete HPLC instrument consists of the Jet Propulsion Labortory's (JPL's) quadrupole ion trap mass spectrometer integrated with a state-of-the-art MEMS liquid chromatograph (LC) system developed by the California Institute of Technology's (Caltech's) Micromachining Laboratory. The IC version of the chip consist of an electrolysis-based injector, a separation column, two electrolysis pumps for gradient generation, mixer, and a built-in conductivity detector. The HPLC version of the chip also includes a nanospray tip. The low instrument mass, coupled with its high analytical capabilities, makes the LC chip ideally suitable for wide range of applications such as trace contaminant, inorganic analytical science and, when coupled to a mass spectrometer, a macromolecular detection system for either crewed space exploration vehicles or robotic planetary missions.

Kidd, R. D.↗
NASA NTRS1992

Comparison of measured and predicted performance of a SIS waveguide mixer at 345 GHz

The measured gain and noise of a SIS waveguide mixer at 345 GHz have been compared with theoretical values, calculated from the quantum mixer theory using a three port model. As a mixing element, we use a series array of two Nb-Al2O3-Nb SIS junctions. The area of each junction is 0.8 sq microns and the normal state resistance is 52 omega. The embedding impedance of the mixer has been determined from the pumped DC-IV curves of the junction and is compared to results from scale model measurements (105 x). Good agreement was obtained. The measured mixer gain, however, is a factor of 0.45 plus or minus 0.5 lower than the theoretical predicted gain. The measured mixer noise temperature is a factor of 4-5 higher than the calculated one. These discrepancies are independent on pump power and are valid for a broad range of tuning conditions.

Honingh, C. E.↗
NASA NTRS1992

InGaAs/InP heteroepitaxial Schottky barrier diodes for terahertz applications

This paper explores the feasibility of planar, sub-harmonically pumped, anti-parallel InGaAs/InP heteroepitaxial Schottky diodes for terahertz applications. We present calculations of the (I-V) characteristics of such diodes using a numerical model that considers tunneling. We also present noise and conversion loss predictions of diode mixers operated at 500 GHz, and obtained from a multi-port mixer analysis, using the I-V characteristics predicted by our model. Our calculations indicate that InGaAs/InP heteroepitaxial Schottky barrier diodes are expected to have an I-V characteristic with an ideality factor comparable to that of GaAs Schottky diodes. However, the reverse saturation current of InGaAs/InP diodes is expected to be much greater than that of GaAs diodes. These predictions are confirmed by experiment. The mixer analyses predict that sub-harmonically pumped anti-parallel InGaAs/InP diode mixers are expected to offer a 2 dB greater conversion loss and a somewhat higher single sideband noise temperature than their GaAs counterparts. More importantly, the InGaAs/InP devices are predicted to require only one-tenth of the local oscillator power required by similar GaAs diodes.

Bhapkar, Udayan V.↗