Reliable low-power thin-film spacecraft memory final report
Magnetic, thin-film, plated-wire spacecraft memory
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Magnetic, thin-film, plated-wire spacecraft memory
The ideal X-ray camera for astrophysics would have more than a million pixels and provide an energy resolution of better than leV FWHM for energies up to 10 keY. We have microfabricated and characterized thin-film magnetic penetration thermometers (MPTs) that show great promise towards meeting these capabilities. MPTs operate in similar fashion to metallic magnetic calorimeters (MMCs), except that a superconducting sensor takes the place of a paramagnetic sensor and it is the temperature dependence of the superconductor's diamagnetic response that provides the temperature sensitivity. We present a description of the design and performance of our prototype thin-film MPTs with MoAu bilayer sensors, which have demonstrated an energy resolution of approx 2 eV FWHM at 1.5 keY and 4.3 eV FWHM at 5.9 keY.
Improvements are made in a non-volatile magnetic random access memory. Such a memory is comprised of an array of unit cells, each having a Hall-effect sensor and a thin-film magnetic element made of material having an in-plane, uniaxial anisotropy and in-plane, bipolar remanent magnetization states. The Hall-effect sensor is made more sensitive by using a 1 m thick molecular beam epitaxy grown InAs layer on a silicon substrate by employing a GaAs/AlGaAs/InAlAs superlattice buffering layer. One improvement avoids current shunting problems of matrix architecture. Another improvement reduces the required magnetizing current for the micromagnets. Another improvement relates to the use of GaAs technology wherein high electron-mobility GaAs MESFETs provide faster switching times. Still another improvement relates to a method for configuring the invention as a three-dimensional random access memory.
Thickness dependence of anisotropy, magnetization, and longitudinal coercive force in very thin permalloy films
Breadboard model of magnetic, thin film, and plated-wire memory for spaceborne applications
Kerr magneto-optic camera for 10 nsec exposures of dynamic magnetization configuration in magnetic thin film during high speed flux reversal
Developing alloys based on ordered compounds is significantly more complicated than developing designs based on disordered materials. In ordered compounds, the major constituent elements reside on particular sublattices. Therefore, the addition of a ternary element to a binary-ordered compound is complicated by the manner in which the ternary addition is made (at the expense of which binary component). When ternary additions are substituted for the wrong constituent, the physical and mechanical properties usually degrade. In some cases the resulting degradation in properties can be quite severe. For example, adding alloying additions to NiAl in the wrong combination (i.e., alloying additions that prefer the Al sublattice but are added at the expense of Ni) will severely embrittle the alloy to the point that it can literally fall apart during processing on cooling from the molten state. Consequently, alloying additions that strongly prefer one sublattice over another should always be added at the expense of that component during alloy development. Elements that have a very weak preference for a sublattice can usually be safely added at the expense of either element and will accommodate any deviation from stoichiometry by filling in for the deficient component. Unfortunately, this type of information is not known beforehand for most ordered systems. Therefore, a computational survey study, using a recently developed quantum approximate method, was undertaken at the NASA Glenn Research Center to determine the preferred site occupancy of ternary alloying additions to 12 different B2-ordered compounds including NiAl, FeAl, CoAl, CoFe, CoHf, CoTi, FeTi, RuAl, RuSi, RuHf, RuTi, and RuZr. Some of these compounds are potential high temperature structural alloys; others are used in thin-film magnetic and other electronic applications. The results are summarized. The italicized elements represent the previous sum total alloying information known and verify the computational method used to establish the table. Details of the computational procedures used to determine the preferred site occupancy can be found in reference 2. As further substantiation of the validity of the technique, and its extension to even more complicated systems, it was applied to two simultaneous alloying additions in an ordered alloy.
Superconducting phase transition temperature measurements as function of magnetic field in thin film hollow Al and In cylinders
The relaxation of diamagnetic magnetization in the c-axis-aligned YBa2Cu3O(7-x) thin film is studied as a function of orientation and temperature in the range of 5-50 K at H = 0.2 T. The magnetization M(T,H) in the orientations H parallel to c and H perpendicular to c and at all the temperatures is found to decrease logarithmically with time t. The activation energy for the movement of flux lines U is found to be 30-110 meV in the range 5-50 K. For H parallel c, U increases continuously with T, whereas for H perpendicular c, U has two apparent maxima: at T = 10 K and T greater than 50 K. These results are discussed in terms of the thermally activated flux motion model.
Niobium film superconductor carries high currents in strong magnetic fields. The thin niobium film is formed on an inert substrate through evaporation in a vacuum environment. Control of temperature and vacuum results in rejection of gaseous impurities so that the film is of a very high purity.
The magnetic flux relaxation behavior of YBa2Cu3O(7-x) thin film on LaAlO3 for H parallel c was studied in the range of 4.2-40 k and 0.2-1.0 T. Both the normalized flux relaxation rate (S) and the net flux pinning energy (U) increase continuously from 1.3 x 10 exp -2 to 3.0 x 10 exp -2 and from 70-240 meV respectively, as the temperature (T) increases from 10 to 40 K. This behavior is consistent with the thermally activated flux motion model. At low temperatures, however, S is found to decrease much more slowly as compared with kT, in contradiction to the thermal activation model. This behavior is discussed in terms of the athermal quantum tunneling of flux lines. The magnetic field dependence of U, however, is not completely understood.
The magnetic flux relaxation behavior of YBa2Cu3O(7-x) thin film on LaAlO3 for H is parallel to c was studied in the range 4.2 - 40 K and 0.2 - 1.0 T. Both the normalized flux relaxation rate S and the net flux pinning energy U increase continuously from 1.3 x 10(exp -2) to 3.0 x 10(exp -2) and from 70 to 240 meV respectively, as the temperature T increases from 10 to 40 K. This behavior is consistent with the thermally activated flux motion model. At low temperatures, however, S is found to decrease much more slowly as compared with kT, in contradiction to the thermal activation model. This behavior is discussed in terms of the athermal quantum tunneling of flux lines. The magnetic field dependence of U, however, is not completely understood.
Mapping of the magnetic flux density B(sub z) (perpendicular to the film plane) for a YBa2Cu3O7 thin-film sample was carried out using a scanning micro-Hall probe. The sheet magnetization and sheet current densities were calculated from the B(sub z) distributions. From the known sheet magnetization, the tangential (B(sub x,y)) and normal components of the flux density B were calculated in the vicinity of the film. It was found that the sheet current density was mostly determined by 2B(sub x,y)/d, where d is the film thickness. The evolution of flux penetration as a function of applied field will be shown.
Ni-Fe thin films flux reversal with transverse bias field from dynamic magnetization configuration photographs
A ferromagnetic thin-film based magnetic field sensor with first and second sensitive direction sensing structures each having a nonmagnetic intermediate layer with two major surfaces on opposite sides thereof having a magnetization reference layer on one and an anisotropic ferromagnetic material sensing layer on the other having a length in a selected length direction and a smaller width perpendicular thereto and parallel to the relatively fixed magnetization direction. The relatively fixed magnetization direction of said magnetization reference layer in each is oriented in substantially parallel to the substrate but substantially perpendicular to that of the other. An annealing process is used to form the desired magnetization directions.
A new type of continuously operating, in-situ, remotely monitored sensor is presented. The sensor is comprised of a thin film array of magnetostatically coupled, magnetically soft ferromagnetic thin film structures, adhered to or encased within a thin polymer layer. The polymer is made so that it swells or shrinks in response to the chemical analyte of interest, which in this case is pH. As the polymer swells or shrinks, the magnetostatic coupling between the magnetic elements changes, resulting in changes in the magnetic switching characteristics of the sensor. Placed within a sinusoidal magnetic field the magnetization vector of the coupled sensor elements periodically reverses directions, generating magnetic flux that can be remotely detected as a series of voltage spikes in appropriately placed pickup coils. one preliminary sensor design consists of four triangles, initially spaced approximately 50 micrometers apart, arranged to form a 12 mm x 12 mm square with the triangle tips centered at a common origin. Our preliminary work has focused on monitoring of pH using a lightly crosslinked pH sensitive polymer layer of hydroxyethylmethacrylate and 2-(dimethylamino) ethylmethacrylate. As the polymer swells or shrinks the magnetostatic coupling between the triangles changes, resulting in measurable changes in the amplitude of the detected voltage spirits.
Low-field magnetization measurements were made at 4.2 K on thin-film and bulk NbN samples by using a vibrating-sample Foner magnetometer with a 50-kG superconducting solenoid. Values of the lower and upper critical fields are calculated, using magnetization curves as the basis. The significance of the Pauli spin paramagnetism and spin-orbit scattering in these materials is discussed.
During this quarter studies were extended to determine the electronic contribution to the perpendicular interface anisotropy in Co-based multilayers. Using in situ Kerr effect measurements, the influences of different transition metals (TM = Ag, Au, Cu, and Pd) on the magnetic properties of single-crystal Co films grown on Pd (111) and Au (111) surfaces are investigated. Last quarter the discovery of a large peak in the perpendicular anisotropy when approximately one monolayer of Cu or Ag is deposited on the Co surface was reported. We now have added a computer-controlled stepper-motor drive to our MBE sample transfer mechanism. The motor allows us to move the sample at a constant velocity from behind a shutter during deposition. The film, therefore, is deposited as a wedge with a linear variation of thickness across the substrate. In this way, a continuous range of coverage on a single sample is studied. The stepper motor also provides the necessary control for precisely positioning the sample in the laser beam for Kerr effect measurements at the different coverages.