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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Development and Test of a Large Aperture $Nb_3Sn$ Cos-Theta Dipole Coil with Stress Management

An innovative stress-management (SM) concept for cos-theta (CT) coils (SMCT coil concept) has been proposed at Fermilab. A large-aperture two-layer Nb3Sn SMCT dipole coil was designed and manufactured to validate and test the SM concept including coil design, fabrication technology, and performance. The first large-aperture SMCT coil (SMCT1) was fabricated and assembled with a small-aperture Nb3Sn coil inside a dipole mirror magnet. SMCT1 coil tests in a dipole mirror structure was performed in two configurations - SMCTM1a with only powered two-layer SMCT1 coil and SMCTM1b with the SMCT coil connected in series with an inner two-layer dipole coil. The test goals are to prove the SMCT coil concept in two-layer and four-layer mirror configurations; demonstrate that the magnet can reach the targeted quench current at the established preload; study magnet training, training memory after thermal cycle, ramp rate and temperature dependences of the magnet quench current; and test the SMCT1 coil quench protection parameters. This paper summarizes the SMCT1 coil design and parameters, the coil main fabrication steps, its assembly in the dipole mirror structure. The results of the SMCTM1a/b mirror test are presented and discussed.

43 PARTICLE ACCELERATORS↗
DOE OSTI2025

Field-free switching of perpendicular magnetization in a ferrimagnetic insulator with spin reorientation transition

Writing magnetic bits through spin-orbit torque (SOT) switching is promising for fast and efficient magnetic random-access memory devices. While SOT switching of out-of-plane (OOP) magnetized states requires lateral symmetry breaking, in-plane (IP) magnetized states suffer from low storage density. Here, we demonstrate a field-free switching scheme using a 5-nanometer europium iron garnet film grown with a (110) orientation that shows a spin reorientation transition from OOP to IP above room temperature. This scheme combines the benefits of high-density storage in the OOP states at room temperature and the efficient field-free SOT switching in the IP states at elevated temperatures. While conventional switching of OOP bits faces the dilemma that high OOP anisotropy is required to improve bit stability and low OOP anisotropy is required to lower switching current density, this scheme disentangles this interdependence, allowing for low switching currents to be possible without sacrificing the bit stability, offering opportunities for future memory devices.

Science & Technology - Other Topics↗
DOE OSTI2024

Transfer of Millimeter‐Scale Strained Multiferroic Epitaxial Thin Films on Rigid Substrates via an Epoxy Method Producing Magnetic Property Enhancement

The demonstration of epitaxial thin film transfer has enormous potential for thin film devices free from the traditional substrate epitaxy limitations. However, large-area continuous film transfer remains a challenge for the commonly reported polymer-based transfer methods due to bending and cracking during transfer, especially for highly strained epitaxial thin films. In this work, a new epoxy-based, rigid transfer method is used to transfer films from an SrTiO 3 (STO) growth substrate onto various new substrates, including those that will typically pose significant problems for epitaxy. An epitaxial multiferroic Bi 3 Fe 2 Mn 2 O x (BFMO) layered supercell (LSC) material is selected as the thin film for this demonstration. The results of surface and structure studies show an order of magnitude increase in the continuous area of transferred films when compared to previous transfer methods. The magnetic properties of the BFMO LSC films are shown to be enhanced by the release of strain in this method, and ferromagnetic resonance is found with an exceptionally low Gilbert damping coefficient. The large-area transfer of this highly strained complex oxide BFMO thin film presents enormous potential for the integration of many other multifunctional oxides onto new substrates for future magnetic sensors and memory devices.

bismuth oxides↗
DOE OSTI2024

Machine learning-accelerated discovery of iron cobalt phosphides as rare-earth-free magnets

Here, the discovery of rare-earth-free permanent magnets has been a goal of scientists for decades. The absence of rare-earth elements will alleviate a pressing concern about the availability of rare-earth elements used in permanent magnets. These magnets are crucial for applications such as wind turbines, electric cars, and memory devices. Rare-earth magnets are special owing to a large magnetic anisotropy energy (K 1 ). In contrast, iron cobalt phosphides hold promise since doping P into cubic FeCo can induce anisotropy, leading to a large coercivity, without introducing rare-earth elements. We present a comprehensive search over the Fe-Co-P ternary space for magnets, utilizing recently developed adaptive machine learning feedback to efficiently screen over 850 000 structures. We focus on machine learning acceleration as a paradigm for materials design. Further adaptive genetic algorithm searches and first-principles calculations aid in the identification of 16 new structures below the known convex hull. Five of them possess high magnetic polarization (J s > 1 T). The structures with desirable magnetic properties center on (Fe,Co) 2⁢ P. This supports conventional wisdom, which focuses on the mixture of the two known end compounds: Fe 2 ⁢P and Co 2 ⁢P. Our work provides guidance for synthesis. We find Fe 7 ⁢CoP 4 shows the most promise (J s = 1.03T and K 1 = 0.83MJ/m 3 ).

36 MATERIALS SCIENCE↗
DOE OSTI2024

Memory and rejuvenation in glassy systems

Here, the memory effect in a single crystal spin glass (Cu 0.92 Mn 0.08 ) has been measured using 1 Hz ac susceptibility measurements over a reduced temperature range of 0.4 - 0.7 T g and a model of the memory effect has been developed. A double-waiting-time protocol is carried out where the spin glass is first allowed to age at a temperature below T g , T w$_{1}$ , followed by a second aging 4 K lower, T w$_{2}$ . The 4 K separation is sufficient to ensure rejuvenation has occurred. The model is based on calculating overlaps between the growth of the correlation lengths at the two temperatures. It accounts for the absolute magnitude of the memory effect as a function of both waiting times and temperatures. The data can be explained by the memory loss being a function of the relative change in the correlated volume at the first waiting temperature due to growth in the correlations at the second waiting temperature.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Direct measurement of reduced exchange stiffness and its impact on magnetic vortex behavior in PyGd alloys

Thin films composed of sputtered transition metal/rare earth (TM/RE) ferrimagnets have emerged as promising building blocks for future spintronic devices, offering tunable magnetic properties critical for data storage, memory, and logic applications. However, understanding how the combination of TM and RE elements influences effective magnetic properties, such as exchange stiffness (Aex), remains challenging. Magnetic vortices provide a versatile tool for probing these properties in thin film systems. By combining magnetic imaging via soft x-ray microscopy and micromagnetic modeling, we quantify the effective exchange stiffness in PyGd ferrimagnetic disks with varying Gd concentrations. Our results indicate a reduction in Aex to below 3 pJ/m for a 20% Gd concentration when compared to reference Py, and values below 2 pJ/m for 30% Gd, reflecting weak Ni–Gd exchange coupling. These findings highlight the critical role of rare earth content in tuning the exchange stiffness. The reduced exchange stiffness facilitates a linear field response of the magnetization up to the edge of the disk, as well as significant deformations in the vortex core itself when compared to films with larger Aex. Our results are in line with, albeit lower than, recent measurements of the exchange stiffness in intermixed PyGd. This reduced exchange stiffness has implications for the development of spintronic devices based on ferrimagnetic skyrmions.

Jacob, Liyan↗
DOE OSTI2026

Slow Quasiparticle Dynamics and Anyonic Statistics in a Fractional Quantum Hall Fabry-Pérot Interferometer

Anyons are two-dimensional particles with fractional exchange statistics that emerge as elementary excitations of fractional quantum Hall phases. Experimentally, their exchange statistics can be measured in the edge-state Fabry-Pérot interferometer, wherein the presence of 𝑁 𝑞⁢𝑝 localized anyons contributes a phase 𝑁 𝑞⁢𝑝⁢ 𝜃 𝑎 to the interference pattern where 𝜃 𝑎 is twice the exchange phase. Here we report the observation of large, hysteretic phase jumps in a monolayer graphene Fabry-Pérot interferometer at 𝜈 = 1/3. When the filling factor is increased from 𝜈 < 1/3 toward the center of the plateau, we observe phase slips with magnitude Δ⁢𝜃 ≈ 2⁢𝜋/3, consistent with the addition of individual quasiparticles to the interferometer bulk. These phase slips occur as instantaneous jumps in the interference signal, with intervals between the jumps indicating quasiparticle equilibration times exceeding 20 min. We use this long timescale to investigate the effect of changes in interferometer area 𝐴 𝐼 and 𝑁 𝑞⁢𝑝 independently at fixed magnetic field, revealing a striking memory effect in the phase slip magnitude. In particular, as the 𝜈 =1/3 plateau is approached from higher filling, we observed phase slips with Δ⁢𝜃 significantly larger than 2⁢𝜋/3 over the same range of gate voltage where quantized jumps are seen for increasing 𝜈. We discuss this asymmetry in terms of bulk-edge coupling of quasiparticles localized near the edge or in the bulk, and argue that this effect can be qualitatively reconciled with theoretical expectations for strongly interacting quasiparticles in the presence of weak disorder and strongly nonequilibrium charge dynamics. Besides providing a replication of interferometric measurements sensitive to 𝜃 𝑎 , our results highlight the key role played by charge dynamics on signatures of the anyon phase, and demonstrate that fractional quasiparticles can be indefinitely localized in nonequilibrium configurations.

anyons↗
DOE OSTI2024

Twist-assisted all-antiferromagnetic tunnel junction in the atomic limit

Abstract Antiferromagnetic spintronics 1,2 shows great potential for high-density and ultrafast information devices. Magnetic tunnel junctions (MTJs), a key spintronic memory component that are typically formed from ferromagnetic materials, have seen rapid developments very recently using antiferromagnetic materials 3,4 . Here we demonstrate a twisting strategy for constructing all-antiferromagnetic tunnel junctions down to the atomic limit. By twisting two bilayers of CrSBr, a 2D antiferromagnet (AFM), a more than 700% nonvolatile tunnelling magnetoresistance (TMR) ratio is shown at zero field (ZF) with the entire twisted stack acting as the tunnel barrier. This is determined by twisting two CrSBr monolayers for which the TMR is shown to be derived from accumulative coherent tunnelling across the individual CrSBr monolayers. The dependence of the TMR on the twist angle is calculated from the electron-parallel momentum-dependent decay across the twisted monolayers. This is in excellent agreement with our experiments that consider twist angles that vary from 0° to 90°. Moreover, we also find that the temperature dependence of the TMR is, surprisingly, much weaker for the twisted as compared with the untwisted junctions, making the twisted junctions even more attractive for applications. Our work shows that it is possible to push nonvolatile magnetic information storage to the atomically thin limit.

Science & Technology - Other Topics↗
DOE OSTI2025

Magnetic Switching in Monolayer 2D Diluted Magnetic Semiconductors via Spin‐to‐Spin Conversion

Abstract The integration of 2D van der Waals (vdW) magnets with topological insulators or heavy metals holds great potential for realizing next‐generation spintronic memory devices. However, achieving high‐efficiency spin–orbit torque (SOT) switching of monolayer vdW magnets at room temperature poses a significant challenge, particularly without an external magnetic field. Here, it is shown field‐free, deterministic, and nonvolatile SOT switching of perpendicular magnetization in the monolayer, diluted magnetic semiconductor (DMS), Fe‐doped MoS 2 (Fe:MoS 2 ) at up to 380 K with a current density of ≈7 × 10 4 A cm −2 . The in situ doping of Fe into monolayer MoS 2 via chemical vapor deposition and the geometry‐induced strain in the crystal break the rotational switching symmetry in Fe:MoS 2 , promoting field‐free SOT switching by generating out‐of‐plane spins via spin‐to‐spin conversion. An apparent anomalous Hall effect (AHE) loop shift at a zero in‐plane magnetic field verifies the existence of z spins in Fe:MoS 2 , inducing an antidamping‐like torque that facilitates field‐free SOT switching. This field‐free SOT application using a 2D ferromagnetic monolayer provides a new pathway for developing highly power‐efficient spintronic memory devices.

Chen, Siwei [Department of Mechanical Engineering ↗
DOE OSTI2025

Harnessing ferro-valleytricity in pentalayer rhombohedral graphene for memory and compute

Two-dimensional materials with multiple degrees of freedom, including spin, valleys, and orbitals, open up an exciting avenue for engineering multifunctional devices. Beyond spintronics, these degrees of freedom can lead to novel quantum effects such as valley-dependent Hall effects and orbital magnetism, which could revolutionize next-generation electronics. However, achieving independent control over valley polarization and orbital magnetism has been a challenge due to the need for large electric fields. A recent breakthrough involving pentalayer rhombohedral graphene has demonstrated the ability to individually manipulate anomalous Hall signals and orbital magnetic hysteresis, forming what is known as a valley-magnetic quartet. Here, we leverage the electrically tunable ferro-valleytricity of pentalayer rhombohedral graphene to develop nonvolatile memory and in-memory computation applications. We propose an architecture for a dense, scalable, and selector-less nonvolatile memory array that harnesses the electrically tunable ferro-valleytricity. In our designed array architecture, nondestructive read and write operations are conducted by sensing the valley state through two different pairs of terminals, allowing for independent optimization of read/write peripheral circuits. The power consumption of our PRG-based array is remarkably low, with only ∼6 nW required per write operation and ∼2.3 nW per read operation per cell. This consumption is orders of magnitude lower than that of the majority of state-of-the-art cryogenic memories. Additionally, we engineer in-memory computation by implementing majority logic operations within our proposed nonvolatile memory array without modifying the peripheral circuitry. In conclusion, our framework presents a promising pathway toward achieving ultra-dense cryogenic memory and in-memory computation capabilities.

2D materials↗
DOE OSTI2026

Space-Charge-Limited van der Waals Spin Transistor

Integrating semiconducting and magnetic materials could combine transistorlike operation with nonvolatility and enable architectures such as logic in memory. Here, in this work, we employ correlated electrical transport and scanning nitrogen-vacancy center magnetic imaging to elucidate a spin transistor concept that amalgamates vertical and lateral hopping transport inside a 2D antiferromagnetic semiconductor, mechanistically distinct from vertical tunneling devices. Our device, based on a monolayer-bilayer junction in CrSBr, displays giant, gate-tunable magnetoresistance driven by the dual action of electrostatic doping on space-charge-limited lateral conduction and interlayer exchange coupling. Moreover, we visualize a field-trainable, layer-sharing effect that selects between coherent or domain-wall reversal at the spin-flip transition, enabling multilevel, memristive conductance states. Our layer-dependent space charge mechanism for convergent electrical and magnetic control opens opportunities to address limitations in contemporary computing.

2-dimensional systems↗
DOE OSTI2024

Fighting the climate crisis with caloric heat pumping: Innovations to enable widespread adoption

Caloric heat pumping is a cross-cutting thermal energy technology that can cover a wide range of applications and temperatures, from millikelvins to hundreds of kelvins, with a working medium that has zero global warming potential. The technology promises cost savings and high efficiency, having 60% Carnot efficiency demonstrated to date. The Energy Earthshots™ Initiative, launched by the U.S. Department of Energy, aims to fight the climate crisis and overcome technological barriers to a decarbonized economy. The initiative focuses on the development of energy solutions that increase efficiency, reduce greenhouse gas emissions, and ensure affordability. Three out of eight Energy Earthshots™ look for alternative thermal energy technologies for extensive temperature ranges, from hydrogen liquefaction to metal-treating temperatures. Caloric heat pumping can fulfill all these requirements; however, at the current stage, caloric systems have limited presence in real-world applications. Further, this perspective discusses key efforts to address barriers hindering the widespread adoption of caloric technology. We focus on essential breakthroughs in and effective approaches to material discovery and draw a path to high-power-density, grid-interactive caloric systems to support achieving the ambitious net-zero carbon economy goal.

42 ENGINEERING↗
DOE OSTI2024

Performance evaluation of an RFSoC operating in a 1.25 Tesla magnetic field

Here, the Belle II experiment at the SuperKEKB collider is preparing for an upgrade after 2027–2028 to handle higher luminosity and increased background rates. A Radio Frequency System-on-Chip (RFSoC) has been identified as a potential candidate for a common front-end upgrade for subsystems requiring high-speed waveform digitization. The RFSoC's ADC and DAC channels were tested across various magnetic field strengths and a few different field orientations. Power consumption and boot memory functionality were also assessed. Results indicate stable operation with negligible performance degradation, suggesting the RFSoC's viability for high-speed digitization tasks in high magnetic field environments.

47 OTHER INSTRUMENTATION↗
DOE OSTI2026

Giant Exfoliation Induced Magnetic Coercivity in Fe 3 GaTe 2

Permanent magnets with strong anisotropy and high coercivity underpin modern information and energy technologies, yet rare-earth-free alternatives remain limited. Here, we show that thickness engineering via mechanical exfoliation induces hard magnetic behavior in the van der Waals ferromagnet Fe 3 GaTe 2 . Bulk crystals exhibit Curie temperatures above 350 K but negligible room-temperature coercivity. When thinned below ∼100 nm, the coercive field is dramatically enhanced, reaching nearly 1 T at room temperature for in-plane fields—comparable to conventional hard magnets. Micromagnetic analysis reveals a crossover in magnetization reversal from domain-mediated processes in bulk samples to quasi-coherent rotation in thin flakes, driven by increased effective anisotropy and suppressed domain formation. This thickness-dependent transition enables tuning of magnetic hardness without chemical modification. Combined with high saturation magnetization and robust room-temperature performance, Fe 3 GaTe 2 emerges as a promising rare-earth-free material for spintronic applications. Its layered structure further allows integration into van der Waals heterostructures, where large in-plane coercivity can stabilize magnetic states against perturbations and interlayer coupling, offering potential for high-density nonvolatile memory and domain-wall-based devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Non-equilibrium dynamics in geometrically frustrated spin glass Bi 2 Fe 3 GaO 9 with a Cairo lattice

We have explored the magnetic relaxation of the spin glass phase in Bi 2 Fe 3 GaO 9 , a geometrically frustrated magnet with a unique Cairo lattice made of pentagonal building blocks. Using dc magnetization measurements, we find the relaxation behavior in single crystals follows the Arrhenius law as a function of temperature but remains relatively constant under different magnetic fields. Through a carefully designed protocol, we observe significant rejuvenation and memory effects, reminiscent of classical dilute spin glasses rather than spin jamming systems. Our finding suggests that Bi 2 Fe 3 GaO 9 is probably located in the crossover between conventional spin glass and perfect spin jam and thus provides an excellent platform for investigating the evolution of underlying magnetic structure, paving the way for further neutron scattering research.

aging↗
DOE OSTI2024

Magnetization dynamics driven by displacement currents across a magnetic tunnel junction

Understanding the high-frequency transport characteristics of magnetic tunnel junctions (MTJs) is crucial for the development of fast-operating spintronics memories and radio frequency devices. Here, we present the study of a frequency-dependent capacitive current effect in Co Fe B / Mg O -based MTJs and its influence on magnetization dynamics using a time-resolved magneto-optical Kerr effect technique. In our device, operating at gigahertz frequencies, we find a large displacement current of the order of mA, which does not break the tunnel barrier of the MTJ. Importantly, this current generates an Oersted field and spin-orbit torque, inducing magnetization dynamics. Our discovery holds promise for building robust MTJ devices operating under high current conditions, also highlighting the significance of capacitive impedance in high-frequency magnetotransport techniques. Published by the American Physical Society 2024

Safeer, C. K. (ORCID:0000000323969730)↗
DOE OSTI2024

Unconventional Spin-Orbit Torques Due to Reduced Crystal Symmetries

Spin-orbit torques have emerged as a powerful mechanism for manipulating magnetic moments in spintronic devices, offering a pathway to more efficient and scalable memory and logic technologies. While conventional spin-orbit torques generated in heavy metals and topological insulators have been extensively studied, recent advancements in unconventional spin-orbit torques demonstrated out-of-plane spin polarizations that could effectively switch perpendicular magnetizations without the need for additional external in-plane magnetic fields, promising significant implications for the development of energy-efficient and compact spintronic devices. Unconventional spin-orbit torques are usually found in materials with low symmetries, such as transition metal dichalcogenides, topological insulators, and 2-D materials. Here, we provide a brief overview of unconventional spin-orbit torques and present two example material systems: CrPt 3 and MoTe 2 , both exhibiting strong spin-orbit coupling and phase-dependent spin-orbit torques, and focus on their unique origins and potential applications. We discuss the roles of magnetic and crystallographic orders in generating unconventional spin-orbit torques, highlighting how these factors contribute to the observed anisotropic and directional dependencies.

magnetic films↗
DOE OSTI2025

Ice sculpting: An artificial spin ice Tutorial on controlling microstate and geometry for magnonics and neuromorphic computing

Artificial spin ice, arrays of strongly interacting nanomagnets, are complex magnetic systems with many emergent properties, rich microstate spaces, intrinsic physical memory, high-frequency dynamics in the GHz range, and compatibility with a broad range of measurement approaches. This Tutorial article aims to provide the foundational knowledge needed to understand, design, develop, and improve the dynamic properties of artificial spin ice. Special emphasis is placed on introducing the theory of micromagnetics, which describes the complex dynamics within these systems, along with their design, fabrication methods, and standard measurement and control techniques. The article begins with a review of the historical background, introducing the underlying physical phenomena and interactions that govern artificial spin ice. We then explore the standard experimental techniques used to prepare the microstate space of the nanomagnetic array and to characterize magnetization dynamics, both in artificial spin ice and more broadly in ferromagnetic materials. Finally, we introduce the basics of neuromorphic computing applied to the case of artificial spin ice systems with a goal to help researchers new to the field grasp these exciting new developments.

Sultana, Rawnak [Univ. of Delaware, Newark, DE (Un↗