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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Quantum Imaging of Ferromagnetic van der Waals Magnetic Domain Structures at Ambient Conditions

Recently discovered 2D van der Waals magnetic materials, and specifically iron–germanium–telluride (Fe5GeTe2), have attracted significant attention both from a fundamental perspective and for potential applications. Key open questions concern their domain structure and magnetic phase transition temperature as a function of sample thickness and external field, as well as implications for integration into devices such as magnetic memories and logic. Here we address key questions using a nitrogen-vacancy center based quantum magnetic microscope, enabling direct imaging of the magnetization of Fe5GeTe2 at submicrometer spatial resolution as a function of temperature, magnetic field, and thickness. This quantum imaging technique provides noninvasive, high-sensitivity measurements with high spatial resolution under ambient conditions, making it particularly well suited for probing 2D magnets. We employ spatially resolved measures, including magnetization variance and cross-correlation, and find a significant spread in transition temperature yet with no clear dependence on thickness down to 15 nm. We also identify previously unknown stripe features in the optical as well as magnetic images, which we attribute to modulations of the constituting elements during crystal synthesis and subsequent oxidation. Our results suggest that the magnetic anisotropy in this material does not play a crucial role in their magnetic properties, leading to a magnetic phase transition of Fe5GeTe2 which is largely thickness-independent down to 15 nm. Our findings could be significant in designing future spintronic devices, magnetic memories, and logic with 2D van der Waals magnetic materials.

Bindu, Bindu [Hebrew University of Jerusalem, Isra↗
NASA NTRS2001

Non-Volatile Memory Technology Symposium 2001: Proceedings

This publication contains the proceedings for the Non-Volatile Memory Technology Symposium 2001 that was held on November 7-8, 2001 in San Diego, CA. The proceedings contains a a wide range of papers that cover current and new memory technologies including Flash memories, Magnetic Random Access Memories (MRAM and GMRAM), Ferro-electric RAM (FeRAM), and Chalcogenide RAM (CRAM). The papers presented in the proceedings address the use of these technologies for space applications as well as radiation effects and packaging issues.

Aranki, Nazeeh↗
NASA NTRS1999

Results from the First Two Flights of the Static Computer Memory Integrity Testing Experiment

This paper details the scientific objectives, experiment design, data collection method, and post flight analysis following the first two flights of the Static Computer Memory Integrity Testing (SCMIT) experiment. SCMIT is designed to detect soft-event upsets in passive magnetic memory. A soft-event upset is a change in the logic state of active or passive forms of magnetic memory, commonly referred to as a "Bitflip". In its mildest form a soft-event upset can cause software exceptions, unexpected events, start spacecraft safeing (ending data collection) or corrupted fault protection and error recovery capabilities. In it's most severe form loss of mission or spacecraft can occur. Analysis after the first flight (in 1991 during STS-40) identified possible soft-event upsets to 25% of the experiment detectors. Post flight analysis after the second flight (in 1997 on STS-87) failed to find any evidence of soft-event upsets. The SCMIT experiment is currently scheduled for a third flight in December 1999 on STS-101.

Hancock, Thomas M., III↗
DOE OSTI2025

Error-Free and Current-Driven Synthetic Antiferromagnetic Domain Wall Memory Enabled by Channel Meandering

We propose a new type of energy-efficient multi-bit magnetic memory based on current-driven, field-free, controlled domain wall motion. A meandering domain wall channel with precisely interspersed pinning regions provides the multi-bit capability of a magnetic tunnel junction memory. The magnetic free layer of the memory device has perpendicular magnetic anisotropy (PMA) and interfacial Dzyaloshinskii-Moriya interaction (DMI) so that spin-orbit torques (SOTs) induce efficient domain wall motion. Using micromagnetic simulations, we find two different cell designs: two-way switching and four-way switching. The memory cell design choices and the physics of pinning mechanisms are discussed in detail. Furthermore, we show that switching reliability and speed may be significantly improved by replacing the ferromagnetic free layer with a synthetic antiferromagnetic (SAF) layer. Switching behavior and material choices will be discussed for the two memory implementations.

magnetic domain wall↗
DOE OSTI2024

Spectroscopic Signatures of Phonon Character in Molecular Electron Spin Relaxation

Spin–lattice relaxation constitutes a key challenge for the development of quantum technologies, as it destroys superpositions in molecular quantum bits (qubits) and magnetic memory in single molecule magnets (SMMs). Gaining mechanistic insight into the spin relaxation process has proven challenging owing to a lack of spectroscopic observables and contradictions among theoretical models. Here, we use pulse electron paramagnetic resonance (EPR) to profile changes in spin relaxation rates (T 1 ) as a function of both temperature and magnetic field orientation, forming a two-dimensional data matrix. For randomly oriented powder samples, spin relaxation anisotropy changes dramatically with temperature, delineating multiple regimes of relaxation processes for each Cu(II) molecule studied. We show that traditional T 1 fitting approaches cannot reliably extract this information. Single-crystal T 1 anisotropy experiments reveal a surprising change in spin relaxation symmetry between these two regimes. We interpret this switch through the concept of a spin relaxation tensor, enabling discrimination between delocalized lattice phonons and localized molecular vibrations in the two relaxation regimes. Variable-temperature T 1 anisotropy thus provides a unique spectroscopic method to interrogate the character of nuclear motions causing spin relaxation and the loss of quantum information.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1987

Self-Stabilizing Storage Loops for Magnetic-Bubble Memories

Adjacent, sinusoidal loops provide defect-tolerant, self-stabilizing structures. New technology consists of three components providing self-stabilizing structures. First, apertures positioned so bubbles propagate alternately into hexagonally related positions and directly opposed positions; addition of straight barriers by ion milling or implantation of garnet adds transverse stability but leaves longitudinally metastable postions. Second, modification of barrier to sinusoidal shape provides "energy wells" in longitudinal direction at opposed positions and eliminates metastability. Third, positioning and phasing of counterrotating storage loops, provide stable hexagonal support between adjacent loops.

Nelson, Gary L.↗
NASA NTRS1998

Interaction between Convection and Heat Transfer in Crystal Growth

Crystals are integral components in some of our most sophisticated and rapidly developing industries. Single crystals are solids with the most uniform structures that can be obtained on an atomic scale. Because of their structural uniformity, crystals can transmit acoustic and electromagnetic waves and charged particles with essentially no scattering or interferences. This transparency, which can be selectively modified by controlled additions of impurities known as dopants, is the foundation of modern electronic industry. It has brought about widespread application of crystals in transistors, lasers, microwave devices, infrared detectors, magnetic memory devices, and many other magnets and electro-optic components. The performance of a crystal depends strongly on its compositional homogeneity. For instance, in modern microcircuitry, compositional variations of a few percent (down to a submicron length scale) can seriously jeopardize predicted yields. Since crystals are grown by carefully controlled phase transformations, the compositional adjustment in the solid is often made during growth from the nutrient. Hence, a detailed understanding of mass transfer in the nutrient is essential. Moreover, since mass transfer is often the slowest process during growth, it is usually the rate limiting mechanism. Crystal growth processes are usually classified according to the nature of the parent phase. Nevertheless, whether the growth occurs by solidification from a melt (melt growth), nucleation from a solution (solution growth), condensation from a vapor (physical vapor transport) or chemical reaction of gases (chemical vapor deposition), the parent phase is a fluid. As is with most non-equilibrium processes involving fluids, liquid or vapor, fluid motion plays an important role, affecting both the concentration and temperature gradients at the soli-liquid interface.

Source record↗
NASA NTRS1993

Vertical-Bloch-Line Memory

Vertical-Bloch-line memory is developmental very-large-scale integrated-circuit block-access magnetic memory. Stores data in form of localized pairs of twists (VBL pairs) in magnetic field at edge of ferromagnetic domain in each stripe. Presence or absence of VBL pair at bit position denotes one or zero, respectively. Offers advantages of resistance to ionizing radiation, potential areal storage density approximately less than 1 Gb/cm squared, data rates approximately less than 1 Gb/s, and average access times of order of milliseconds. Furthermore, mass, volume, and demand for power less than other magnetic and electronic memories.

Katti, Romney R.↗
DOE OSTI2025

Advances in relaxation and memory effects of magnetic nanoparticles for biomedical applications

Functionalized magnetic nanoparticles are pivotal in magnetic resonance imaging, computed tomography, controlled drug delivery, and hyperthermia treatments due to their exceptional magnetic relaxation and functional properties. The magnetic core composition and structure significantly affects the complex magnetic properties of these nanoparticles necessitating a thorough examination of magnetism fundamentals related to these systems. One important aspect is the ability of magnetic nanoparticles to retain previous magnetic state configurations known as memory effect, primarily governed by domain structure and magnetic anisotropy. Despite its relevance to advanced applications, comprehensive studies on magnetic relaxation and memory effects remain limited. Here, the present review aims to bridge this gap by investigating relaxation mechanisms, synthesis strategies, and applications, fostering further innovation. It investigates the memory effects and their dependence on particle composition and morphology along with key synthesis techniques for large-scale production in industrial adoption. Structured into focused sections on magnetic properties and their influence on biomedical and technological applications, this review provides essential insights into memory effects, magneto-relaxation mechanisms, influencing factors, and both experimental and theoretical methodologies. It also delves into computational modelling and AI-driven design, which are revolutionizing the prediction, discovery, and optimization of materials with tailored properties.

36 MATERIALS SCIENCE↗
NASA NTRS1994

Non-volatile magnetic random access memory

Improvements are made in a non-volatile magnetic random access memory. Such a memory is comprised of an array of unit cells, each having a Hall-effect sensor and a thin-film magnetic element made of material having an in-plane, uniaxial anisotropy and in-plane, bipolar remanent magnetization states. The Hall-effect sensor is made more sensitive by using a 1 m thick molecular beam epitaxy grown InAs layer on a silicon substrate by employing a GaAs/AlGaAs/InAlAs superlattice buffering layer. One improvement avoids current shunting problems of matrix architecture. Another improvement reduces the required magnetizing current for the micromagnets. Another improvement relates to the use of GaAs technology wherein high electron-mobility GaAs MESFETs provide faster switching times. Still another improvement relates to a method for configuring the invention as a three-dimensional random access memory.

Katti, Romney R.↗
NASA NTRS2001

Integrated semiconductor-magnetic random access memory system

The present disclosure describes a non-volatile magnetic random access memory (RAM) system having a semiconductor control circuit and a magnetic array element. The integrated magnetic RAM system uses CMOS control circuit to read and write data magnetoresistively. The system provides a fast access, non-volatile, radiation hard, high density RAM for high speed computing.

Katti, Romney R.↗
DOE OSTI2025

Structural properties and recrystallization effects in ion beam modified B20-type FeGe films

Disordered iron germanium (FeGe) has recently garnered interest as a testbed for a variety of magnetic phenomena as well as for use in magnetic memory and logic applications. This is partially owing to its ability to host skyrmions and antiskyrmions—nanoscale whirlpools of magnetic moments that could serve as information carriers in spintronic devices. In particular, a tunable skyrmion–antiskyrmion system may be created through precise control of the defect landscape in B20-phase FeGe, motivating the development of methods to systematically tune disorder in this material and understand the ensuing structural properties. To this end, we investigate a route for modifying magnetic properties in FeGe. In particular, we irradiate epitaxial B20-phase FeGe films with 2.8 MeV Au 4+ ions, which creates a dispersion of amorphized regions that may preferentially host antiskyrmions at densities controlled by the irradiation fluence. To further tune the disorder landscape, we conduct a systematic electron diffraction study with in situ annealing, demonstrating the ability to recrystallize controllable fractions of the material at temperatures ranging from ~150 to 250°C. Finally, we describe the crystallization kinetics using the Johnson–Mehl–Avrami–Kolmogorov model, finding that the growth of crystalline grains is consistent with diffusion-controlled one-to-two dimensional growth with a decreasing nucleation rate.

36 MATERIALS SCIENCE↗