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Assembly of prefabricated structural beams for roof trusses, bleachers, or other lightweight structures made easier by use of flexural pivot at one or both ends. When pivot is attached, joint is flexible, thus simplifying alinement; joint is subsequently rigidized by threaded collar that completes attachment.
Heterogeneous concurrent computing, based on the traditional process-oriented model, is approaching its functionality and performance limits. An alternative paradigm, based on the concept of services, supporting data driven computation, and built on a lightweight process infrastructure, is proposed to enhance the functional capabilities and the operational efficiency of heterogeneous network-based concurrent computing. TPVM is an experimental prototype system supporting exportable services, thread-based computation, and remote memory operations that is built as an extension of and an enhancement to the PVM concurrent computing system. TPVM offers a significantly different computing paradigm for network-based computing, while maintaining a close resemblance to the conventional PVM model in the interest of compatibility and ease of transition Preliminary experiences have demonstrated that the TPVM framework presents a natural yet powerful concurrent programming interface, while being capable of delivering performance improvements of upto thirty percent.
Robots on the NASA space station have a potential range of applications from assisting astronauts during EVA (extravehicular activity), to replacing astronauts in the performance of simple, dangerous, and tedious tasks; and to performing routine tasks such as inspections of structures and utilities. To provide a vehicle for demonstrating the pertinent technologies, a simple robot is being developed for locomotion and basic manipulation on the proposed space station. In addition to the robot, an experimental testbed was developed, including a 1/3 scale (1.67 meter modules) truss and a gravity compensation system to simulate a zero-gravity environment. The robot comprises two flexible links connected by a rotary joint, with a 2 degree of freedom wrist joints and grippers at each end. The grippers screw into threaded holes in the nodes of the space station truss, and enable it to walk by alternately shifting the base of support from one foot (gripper) to the other. Present efforts are focused on mechanical design, application of sensors, and development of control algorithms for lightweight, flexible structures. Long-range research will emphasize development of human interfaces to permit a range of control modes from teleoperated to semiautonomous, and coordination of robot/astronaut and multiple-robot teams.
This presentation will describe some initial results of paper-and-pencil studies of 4 or 5 application kernels applied to a processor-in-memory (PIM) system roughly similar to the Cascade Lightweight Processor (LWP). The application kernels are: * Linked list traversal * Sun of leaf nodes on a tree * Bitonic sort * Vector sum * Gaussian elimination The intent of this work is to guide and validate work on the Cascade project in the areas of compilers, simulators, and languages. We will first discuss the generic PIM structure. Then, we will explain the concepts needed to program a parallel PIM system (locality, threads, parcels). Next, we will present a simple PIM performance model that will be used in the remainder of the presentation. For each kernel, we will then present a set of codes, including codes for a single PIM node, and codes for multiple PIM nodes that move data to threads and move threads to data. These codes are written at a fairly low level, between assembly and C, but much closer to C than to assembly. For each code, we will present some hand-drafted timing forecasts, based on the simple PIM performance model. Finally, we will conclude by discussing what we have learned from this work, including what programming styles seem to work best, from the point-of-view of both expressiveness and performance.
Preliminary design proposed for large, lightweight telescope shroud or light shield carried to orbit in single Space Shuttle cargo load. Shroud concept applied on Earth in portable, compactly storable displays or projection screens. Large telescope shroud includes four deployable masts erecting eight walls of hinged panels of polyimide film. Panels stored fanfolded before deployment and threaded on guide wires unwinding from spools and remain taut during deployment.
Inexpensive, lightweight array antennas on flexible substrates are under development to satisfy a need for large-aperture antennas that can be stored compactly during transport and deployed to full size in the field. Conceived for use aboard spacecraft, antennas of this type also have potential terrestrial uses . most likely, as means to extend the ranges of cellular telephones in rural settings. Several simple deployment mechanisms are envisioned. One example is shown in the figure, where the deployment mechanism, a springlike material contained in a sleeve around the perimeter of a flexible membrane, is based on a common automobile window shade. The array can be formed of antenna elements that are printed on small sections of semi-flexible laminates, or preferably, elements that are constructed of conducting fabric. Likewise, a distribution network connecting the elements can be created from conventional technologies such as lightweight, flexible coaxial cable and a surface mount power divider, or preferably, from elements formed from conductive fabrics. Conventional technologies may be stitched onto a supporting flexible membrane or contained within pockets that are stitched onto a flexible membrane. Components created from conductive fabrics may be attached by stitching conductive strips to a nonconductive membrane, embroidering conductive threads into a nonconductive membrane, or weaving predetermined patterns directly into the membrane. The deployable antenna may comprise multiple types of antenna elements. For example, thin profile antenna elements above a ground plane, both attached to the supporting flexible membrane, can be used to create a unidirectional boresight radiation pattern. Or, antenna elements without a ground plane, such as bow-tie dipoles, can be attached to the membrane to create a bidirectional array such as that shown in the figure. For either type of antenna element, the dual configuration, i.e., elements formed of slots in a conductive membrane, can also be used. Finally, wide bandwidth antennas or arrays can be formed in which the principal direction of radiation is in the plane of the membrane. For this embodiment, the set of elements on the membrane is arranged to form one or more traveling wave antennas. In this case, a nonconductive form of the perimeter springlike material is required to provide the deploying force.
The planned Mars Science Laboratory mission requires inlet funnels for channeling unconsolidated powdered samples from the sampling and sieving mechanisms into instrument test cells, which are required to reduce cross-contamination of the samples and to minimize residue left in the funnels after each sample transport. To these ends, a solid-state shaking mechanism has been created that requires low power and is lightweight, but is sturdy enough to survive launch vibration. The funnel mechanism is driven by asymmetrically mounted, piezoelectric flexure actuators that are out of the load path so that they do not support the funnel mass. Each actuator is a titanium, flextensional piezoelectric device driven by a piezoelectric stack. The stack has Invar endcaps with a half-spherical recess. The Invar is used to counteract the change in stress as the actuators are cooled to Mars ambient temperatures. A ball screw is threaded through the actuator frame into the recess to apply pre-stress, and to trap the piezoelectric stack and endcaps in flexure. During the vibration cycle of the flextensional actuator frame, the compression in the piezoelectric stack may decrease to the point that it is unstressed; however, because the ball joint cannot pull, tension in the piezoelectric stack cannot be produced. The actuators are offset at 120 . In this flight design, redundancy is required, so three actuators are used though only one is needed to assist in the movement. The funnel is supported at three contact points offset to the hexapod support contacts. The actuator surface that does not contact the ring is free to expand. Two other configurations can be used to mechanically tune the vibration. The free end can be designed to drive a fixed mass, or can be used to drive a free mass to excite impacts (see figure). Tests on this funnel mechanism show a high density of resonance modes between 1 and 20 kHz. A subset of these between 9 and 12 kHz was used to drive the CheMin actuators at 7 V peak to peak. These actuators could be driven by a single resonance, or swept through a frequency range to decrease the possibility that a portion of the funnel surface was not coincident with a nodal line (line of no displacement). The frequency of actuation can be electrically controlled and monitored and can also be mechanically tuned by the addition of tuning mass on the free end of the actuator. The devices are solid-state and can be designed with no macroscopically moving parts. This design has been tested in a vacuum at both Mars and Earth ambient temperatures ranging from 30 to 25 C
III-V solar cells on Si substrates are of interest for space photovoltaics since this would combine high performance space cells with a strong, lightweight and inexpensive substrate. However, the primary obstacles blocking III-V/Si cells from achieving high performance to date have been fundamental materials incompatabilities, namely the 4% lattice mismatch between GaAs and Si, and the large mismatch in thermal expansion coefficient. In this paper, we report on the molecular beam epitaxial (MBE) growth and properties of GaAs layers and single junction GaAs cells on Si wafers which utilize compositionally graded GeSi Intermediate buffers grown by ultra-high vacuum chemical vapor deposition (UHVCVD) to mitigate the large lattice mismatch between GaAs and Si. Ga As cell structures were found to incorporate a threading dislocation density of 0.9-1.5 x 10 (exp 6) per square centimeter, identical to the underlying relaxed Ge cap of the graded buffer, via a combination of transmission electron microscopy, electron beam induced current, and etch pit density measurements. AlGaAs/GaAs double heterostructures wre grown on the GeSi/Si substrates for time-resolved photoluminescence measurements, which revealed a bulk GaAs minority carrier lifetime in excess of 10 ns, the highest lifetime ever reported for GaAs on Si. A series of growth were performed to ass3ss the impact of a GaAs buffer to a thickness of only 0.1 micrometer. Secondary ion mass spectroscopy studies revealed that there is negligible cross diffusion of Ga, As and Ge at he III-V/Ge interface, identical to our earlier findings for GaAs grown on Ge wafers using MBE. This indicates that there is no need for a buffer to "bury" regions of high autodopjing,a nd that either pn or np configuration cells are easily accomodated by these substrates. Preliminary diodes and single junction Al Ga As heteroface cells were grown and fabricated on the Ge/GeSi/Si substrates for the first time. Diodes fabricated on GaAs, Ge and Ge/GeSi/Si substrate show nearly identical I-V characteristics in both forward and reverse bias regions. External quantum efficiencies of AlGaAs/GaAs cell structures grown on Ge/GeSi/Si and Ge substrates demonstrated nearly identical photoresponse, which indicates that high lifetimes, diffusion lengths and efficient minority carrier collection is maintained after complete cell processing.
mkFit is an implementation of the Kalman filter-based track reconstruction algorithm that exploits both thread- and data-level parallelism. In the past few years the project transitioned from the R&D phase to deployment in the Run-3 offline workflow of the CMS experiment. The CMS tracking performs a series of iterations, targeting reconstruction of tracks of increasing difficulty after removing hits associated to tracks found in previous iterations. mkFit has been adopted for several of the tracking iterations, which contribute to the majority of reconstructed tracks. When tested in the standard conditions for production jobs, speedups in track pattern recognition are on average of the order of 3.5x for the iterations where it is used (3-7x depending on the iteration). Multiple factors contribute to the observed speedups, including vectorization and a lightweight geometry description, as well as improved memory management and single precision. Efficient vectorization is achieved with both the icc and the gcc (default in CMSSW) compilers and relies on a dedicated library for small matrix operations, Matriplex, which has recently been released in a public repository. While the mkFit geometry description already featured levels of abstraction from the actual Phase-1 CMS tracker, several components of the implementations were still tied to that specific geometry. We have further generalized the geometry description and the configuration of the run-time parameters, in order to enable support for the Phase-2 upgraded tracker geometry for the HL-LHC and potentially other detector configurations. The implementation strategy and high-level code changes required for the HL-LHC geometry are presented. Speedups in track building from mkFit imply that track fitting becomes a comparably time consuming step of the tracking chain.
Mechanical metamaterials (MMs) are engineered structures with unique mechanical properties that arise from their unique spatial arrangement or lattice-like structure. The most commonly designed MMs such as honeycomb and re-entrant auxetics are prone to failure at the sharp corners and weak joints due to the increased stress concentration under deformation. To mitigate this challenge, braided MM structures involving intertwining threads of nylon—forming curved unit cells—have been studied. These textile-inspired cylindrical braided metamaterials (CBMMs) with contrasting unit cells, namely diamond and regular CBMMs, were fabricated by 3D printing. The layer-by-layer deposited structure built by fused filament fabrication delivered an assembly of overlapped threads that are fused at the contact point. To understand deformation behavior of these MMs, finite element models were developed for various load scenarios including quasi-static compression, cyclic and creep loads at room temperature. Stress distribution, deformation mechanisms, and failure modes were analyzed and validated by experiments to analyze the geometries and associated performance. The diamond CBMMs showed stress softening at 30 % compressive strain, withstanding a load of ∼440 N, whereas the regular CBMMs at 50 % strain experienced ∼250 N. The diamond CBMMs delivered higher creep resistance under sustained load and better energy absorption under cyclic loading than the regular CBMMs. The latter, however, exhibited 94 % shape recovery in contrast to 88 % recovery in former prototype during their first cyclic load. In conclusion, this study helps design mechanical lightweight devices that endure significant sustained load and exhibit enhanced energy absorption and shape recovery characteristics in cyclic loading.
Single junction InGaP/GaAs solar cells displaying high efficiency and record high open circuit voltage values have been grown by metalorganic chemical vapor deposition on Ge/graded SiGe/Si substrates. Open circuit voltages as high as 980 mV under AM0 conditions have been verified to result from a single GaAs junction, with no evidence of Ge-related sub-cell photoresponse. Current AM0 efficiencies of close to 16% have been measured for a large number of small area cells, whose performance is limited by non-fundamental current losses due to significant surface reflection resulting from greater than 10% front surface metal coverage and wafer handling during the growth sequence for these prototype cells. It is shown that at the material quality currently achieved for GaAs grown on Ge/SiGe/Si substrates, namely a 10 nanosecond minority carrier lifetime that results from complete elimination of anti-phase domains and maintaining a threading dislocation density of approximately 8 x 10(exp 5) per square centimeter, 19-20% AM0 single junction GaAs cells are imminent. Experiments show that the high performance is not degraded for larger area cells, with identical open circuit voltages and higher short circuit current (due to reduced front metal coverage) values being demonstrated, indicating that large area scaling is possible in the near term. Comparison to a simple model indicates that the voltage output of these GaAs on Si cells follows ideal behavior expected for lattice mismatched devices, demonstrating that unaccounted for defects and issues that have plagued other methods to epitaxially integrate III-V cells with Si are resolved using SiGe buffers and proper GaAs nucleation methods. These early results already show the enormous and realistic potential of the virtual SiGe substrate approach for generating high efficiency, lightweight and strong III-V solar cells.
Layered composite structures are a commonly used, lightweight option for aerospace vehicles today. However, these structures are prone to delamination between plies as well as separation between co-cured sections such as skins and flanges. In addition, delamination can easily be induced by impact damage from events such as tool drops and hailstones. Since such delaminations are often not visible from the external surface of the structure, additional material or fasteners must be included in the design to ensure the structure will maintain the required load-carrying ability through its lifetime. However, adding extra material increases weight and reduces structural efficiency and adding fasteners and their associated holes reduces manufacturing efficiency and adds the requirement to inspect the holes since they could become crack initiation points. Alternate means to reduce delaminations could be beneficial. An alternative to these options is to build the structure with through-thickness reinforcement, such as using stitching threads, to limit delamination, increase out-of-plane strength, and provide a method to join structural elements together without fasteners. The history of through-thickness stitching as it could be applied to aerospace vehicles is described in this paper.
Indium phosphide (InP) P-on-N one-sun solar cells were epitaxially grown using a metalorganic chemical vapor deposition process on germanium (Ge) wafers. The motivation for this work is to replace expensive InP wafers, which are fragile and must be thick and therefore heavy, with less expensive Ge wafers, which are stronger, allowing use of thinner, lighter weight wafers. An intermediate InxGs1-xP grading layer starting as In(0.49)Ga(0.51) at the GaAs-coated Ge wafer surface and ending as InP at the top of the grading layer (backside of the InP cell) was used to attempt to bend some of the threading dislocations generated by lattice-mismatch between the Ge wafer and InP cell so they would be harmlessly confined in this grading layer. The best InP/Ge cell was independently measured by NASA-Lewis with a one-sun 25 C AMO efficiently measured by NASA-Lewis with a one-circuit photocurrent 22.6 mA/sq cm. We believe this is the first published report of an InP cell grown on a Ge wafer. Why get excited over a 9 percent InP/Ge cell? If we look at the cell weight and efficiency, a 9 percent InP cell on an 8 mil Ge wafer has about the same cell power density, 118 W/kg (BOL), as the best InP cell ever made, a 19 percent InP cell on an 18 mil InP wafer, because of the lighter Ge wafer weight. As cell panel materials become lighter, the cell weight becomes more important, and the advantage of lightweight cells to the panel power density becomes more important. In addition, although InP/Ge cells have a low beginning-of-life (BOL) efficiency due to dislocation defects, the InP/Ge cells are very radiation hard (end-of-life power similar to beginning-of-life). We have irradiated an InP/Ge cell with alpha particles to an equivalent fluence of 1.6 x 10(exp 16) 1 MeV electrons/sq cm and the efficiency is still 83 percent of its BOL value. At this fluence level, the power output of these InP/Ge cells matches the GaAs/Ge cell data tabulated in the JPL handbook. Data are presented indicating InP/Ge has more power output than GaAs/Ge cells at fluences in excess of this value.