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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

GaInAs-AlInAs heterostructures for optical devices grown by MBE

The band gap of Ga(0.47)In(0.53)As corresponds to an emission wavelength of about 1.65 microns. Lasers have been produced with Al(0.48)In(0.52)As as cladding layers operating at room temperature. The peak emission of Ga(0.47)In(0.53)As can be continuously varied from 1.65 to 1.2 microns by the use of the multiquantum well structures. This range of wavelengths covers the minimum loss and dispersion in optical fibers and will be applicable to integrated optics. Double heterostructure broad area lasers have been fabricated using AlInAs as cladding layers to the GaInAs active layer. Room temperature threshold current densities of 4.3 kA/sq cm have been obtained for lasers with a 4500 A active region. The first data on GaInAs/AlInAs quantum well emitters will be presented. Photoluminescence of 4 K from quantum well layers of 100, 150, and 180 A with 150 A AlInAs barrier layers produced emission at 1.27, 1.35, and 1.41 microns, respectively. Ga(0.47)In(0.52)As quantum well LEDs have also been produced which emit at 1.34 microns.

Welch, D. F.↗
NASA NTRS2016

Integrated Broadband Quantum Cascade Laser

A broadband, integrated quantum cascade laser is disclosed, comprising ridge waveguide quantum cascade lasers formed by applying standard semiconductor process techniques to a monolithic structure of alternating layers of claddings and active region layers. The resulting ridge waveguide quantum cascade lasers may be individually controlled by independent voltage potentials, resulting in control of the overall spectrum of the integrated quantum cascade laser source. Other embodiments are described and claimed.

Mansour, Kamjou↗
NASA NTRS2016

Regrowth-Free Mid-Infrared Distributed Feedback Quantum Cascade Lasers with Sub-Watt Power Consumption

We report on room-temperature, continuous-wave operation of single-mode quantum cascade lasers designed for minimal threshold power consumption in the 4 to 10 µm spectral range. Narrow-ridge distributed feedback lasers were developed with plasma-etched sidewall corrugations and infrared-transparent dielectric cladding, enabling fabrication without any epitaxial steps beyond the initial growth of the planar laser wafer. The devices exhibit single-mode emission with stable, mode-hop-free tuning and side-mode suppression greater than 25 dB. We demonstrate packaged single-mode devices with continuous-wave threshold power consumption near 1 W above room temperature.

infrared absorption spectroscopy↗
NASA NTRS1988

Development program for 1.93-micron lasers

For the first time lasers operating at 1.93 microns were demonstrated. The lasers were fabricated by Vapor Phase Epitaxial (VPE) growth techniques currently used for the fabrication of high power lasers at 1.3 microns. The structure of these laser diodes consisted of compositionally graded, sulfur-doped InAsP, grown on an InP substrate; a constant-composition n+InAs(0.27)P(0.73) layer, which is the first cladding layer; an In(0.66)Ga(0.34)As layer, which is the active region, and a second InAs(0.27)P(0.73) layer. The devices were oxide-stripe DH lasers (gain-guided only). The best devices had 80 K lasing thresholds in the range of from 80 to 150 mA, and T sub o (below 220 K) in the range of 60 to 90 K. The highest observed temperature of oscillation was 15.5 C. The highest observed power output at 80 K was in the range of 3 to 5 mW. The calculated delta I/delta T was 4.4 A/K. As a part of the materials development, PIN homojunction detectors having the band edge near 1.93 were also fabricated. The best devices (100 micron diameter, mesa structure) exhibited room temperature dark currents in the range of from 20 to 50 nA and had QE at 1.93 microns in the range of 35 to 40 percent. In addition to the device results, the InGaAs-InAsP materials system was extensively investigated and low defect density layers can now be grown allowing for significant device performance improvement.

Longeway, P.↗
NASA NTRS1993

Experimental verification of a theoretical model of an active cladding optical fiber fluorosensor

Experiments were conducted to verify a theoretical model on the injection efficiency of sources in the cladding of an optical fiber. The theoretical results predicted an increase in the injection efficiency for higher differences in refractive indices between the core and cladding. The experimental apparatus used consisted of a glass rod 50 cm long, coated at one end with a thin film of fluorescent substance. The fluorescent substance was excited with side illumination, perpendicular to the rod axis, using a 476 nm Argon-ion laser. Part of the excited fluorescence was injected into the core and guided to a detector. The signal was measured for several different cladding refractive indices. The cladding consisted of sugar dissolved in water and the refractive index was changed by varying the sugar concentration in the solution. The results indicate that the power injected into the rod, due to evanescent wave injection, increases with the difference in refractive index which is in qualitative agreement with theory.

Albin, Sacharia↗
NASA NTRS1985

Arrangement for damping the resonance in a laser diode

An arrangement for damping the resonance in a laser diode is described. This arrangement includes an additional layer which together with the conventional laser diode form a structure (35) of a bipolar transistor. Therein, the additional layer serves as the collector, the cladding layer next to it as the base, and the active region and the other cladding layer as the emitter. A capacitor is connected across the base and the collector. It is chosen so that at any frequency above a certain selected frequency which is far below the resonance frequency the capacitor impedance is very low, effectively shorting the base to the collector.

Katz, J.↗
NASA NTRS2006

Multipurpose Microspheres-Fiber Laser

Doped silica microspheres are used to build a novel, rugged, and tunable laser system. The injected microspheres into a hollow fiber are pumped externally and their emission is collected along the cladding of the fiber.

Abdeldayem, Hossin↗
NASA NTRS1981

Fiber optics transmission of LV signal

The first use of a long optical fiber for transmitting megahertz frequencies in a laser velocimeter (LV) receiver system is reported. The fiber comprises a 600-micron diameter fused silica core, a silicon polymer cladding and a plastic jacket. The fiber numerical aperture is 0.22, corresponding to a maximum entrance half-angle of 0.22 rad. The 10-m length used results in a 5.6% attenuation loss. The fiber is found to transmit an 80-MHz signal with excellent resolution. It is established that an LV receiver using fiber optics sends a clean signal in electronically noisy and high-pressure environments and allows velocity measurements in places too small for a photomultiplier tube.

Young, A. D.↗
NASA NTRS1974

Diffused optical waveguides

Diffused optical waveguides are studied using the modal and the ray tracing approach, with an emphasis on the case of a hollow waveguide with diffuse cladding. The properties of the guided modes are investigated in detail. The applications of these structures to optical circuits, integrated optics lasers and capillary gas lasers are discussed.

Elachi, C.↗
NASA NTRS1987

Uranium nitride fuel fabrication for SP-100 reactors

Fuel pins of uranium mononitride clad in Nb-1 percent Zr were fabricated for irradiation tests in EBR-II. Laboratory scale process parameters to synthesize UN powders and fabricate UN pellets were developed. Uranium mononitride was prepared by converting UO2 to UN. Fuel pellets were prepared by communition of UN briquettes, uniaxial pressing, and high temperature sintering. Techniques for machining, cleaning, and welding Nb-1 percent Zr cladding components were developed. End caps were electron beam welded to the tubing. Helium back-fill holes were sealed with a laser weld.

Mason, Richard E.↗
NASA NTRS2001

Joint EPA/NASA/USAF Interagency Depainting Study

Environmental regulations such as National Emission Standards for Hazardous Air Pollutants (NESHAPs) are drivers for the implementation of environmentally compliant methodologies in the manufacture of aerospace hardware. In 1995, the Environmental Protection Agency (EPA) promulgated the NESHAP for the Aerospace Manufacture and Rework (Aerospace NESHAP) industry. Affected facilities were to be in compliance by September 1998. Several aerospace manufacturing operations are regulated within the Aerospace NESHAP including Depainting operations. The National Aeronautics and Space Administration (NASA), EPA, and United States Air Force (USAF) combined resources to evaluate the performance of nine alternative depainting processes. The seven alternative depainting processes were: (1) Chemical stripping (non-methylene chloride); (2) Carbon Dioxide Blasting; (3) Xenon Flashlamp; (4) Carbon Dioxide Laser Stripping; (5) Plastic Media Blasting; (6) Sodium Bicarbonate Wet Stripping; and (7) Waterjet Blasting and Wheat Starch Blasting. All epoxy primer and polyurethane top coat system was applied to 2024-T3 clad and non-clad aluminum test specimens. Approximately 200 test specimens were evaluated in this study. Each coupon was subjected to three, four, or five complete depainting cycles. This paper discusses the conclusions from the study including the test protocol, test parameters, and achievable strip rates for the alternative depainting processes. Test data includes immersion corrosion testing, sandwich corrosion testing and hydrogen embrittlement testing for the non-methylene chloride chemical strippers. Additionally, the cumulative effect of the alternative depainting processes on the metallurgical integrity of the test substrate is addressed with the results from tensile and fatigue evaluations.

Clark-Ingram, M.↗
NASA NTRS1993

Strained layer InP/InGaAs quantum well laser

Strained layer single or multiple quantum well lasers include an InP substrate, a pair of lattice-matched InGaAsP quarternary layers epitaxially grown on the substrate surrounding a pair of lattice matched In.sub.0.53 Ga.sub.0.47 As ternary layers surrounding one or more strained active layers of epitaxially grown, lattice-mismatched In.sub.0.75 Ga.sub.0.25 As. The level of strain is selected to control the bandgap energy to produce laser output having a wavelength in the range of 1.6 to 2.5 .mu.m. The multiple quantum well structure uses between each active layer. Diethyl zinc is used for p-type dopant in an InP cladding layer at a concentration level in the range of about 5.times.10.sup.17 /cm.sup.3 to about 2.times.10.sup.18 /cm.sup.3. Hydrogen sulfide is used for n-type dopant in the substrate.

Forouhar, Siamak↗
NASA NTRS2005

Adding GaAs Monolayers to InAs Quantum-Dot Lasers on (001) InP

In a modification of the basic configuration of InAs quantum-dot semiconductor lasers on (001)lnP substrate, a thin layer (typically 1 to 2 monolayer thick) of GaAs is incorporated into the active region. This modification enhances laser performance: In particular, whereas it has been necessary to cool the unmodified devices to temperatures of about 80 K in order to obtain lasing at long wavelengths, the modified devices can lase at wavelengths of about 1.7 microns or more near room temperature. InAs quantum dots self-assemble, as a consequence of the lattice mismatch, during epitaxial deposition of InAs on ln0.53Ga0.47As/lnP. In the unmodified devices, the quantum dots as thus formed are typically nonuniform in size. Strainenergy relaxation in very large quantum dots can lead to poor laser performance, especially at wavelengths near 2 microns, for which large quantum dots are needed. In the modified devices, the thin layers of GaAs added to the active regions constitute potential-energy barriers that electrons can only penetrate by quantum tunneling and thus reduce the hot carrier effects. Also, the insertion of thin GaAs layer is shown to reduce the degree of nonuniformity of sizes of the quantum dots. In the fabrication of a batch of modified InAs quantum-dot lasers, the thin additional layer of GaAs is deposited as an interfacial layer in an InGaAs quantum well on (001) InP substrate. The device as described thus far is sandwiched between InGaAsPy waveguide layers, then further sandwiched between InP cladding layers, then further sandwiched between heavily Zn-doped (p-type) InGaAs contact layer.

Qiu, Yueming↗
NASA NTRS1988

Lateral optical confinement of channeled-substrate-planar lasers with GaAs/AlGaAs substrates

A physical explanation of the lateral guiding mechanism in channeled-substrate-planar (CSP) lasers based on the amount of wavefront tilt of the transverse field outside the channel region is presented. Because of this inherent wavefront tilt, all CSP lasers will have a very slight asymmetry in their transverse far-field pattern. The nature of the guiding mechanism does not require light absorption by the substrate. Design curves showing the complex lateral effective index step as a function of n-clad thickness with the active layer as a parameter are also presented. Depending on the specific layer compositions and thicknesses, the CSP guiding mechanism can provide a positive lateral index step for substrates with mole fractions of AlAs ranging from 0 to higher than 0.2.

Evans, Gary A.↗
NASA NTRS1998

NASA/Air Force/Environmental Protection Agency Interagency Depainting Study

Many popular and widely used paint stripping products have traditionally contained methylene chloride as their main active ingredient. However, the Environmental Protection Agency (EPA) has critically curved the allowable use of methylene chloride under the National Emission Standard for Hazardous Air Pollutants regulating Aerospace Manufacturing and Rework Facilities . Compliance with this rule was mandatory by September 1998 for affected facilities. An effort is underway to identify and evaluate alternative depainting technologies emphasizing those believed both effective and environmentally benign. On behalf of the EPA and in cooperation with the United States Air Force, the National Aeronautics and Space Administration is conducting a technical assessment of several alternative technologies ( i.e. : chemical stripping, two CO2 blasting processes, CO2 xenon lamp coating removal, CO2 Laser stripping, plastic media blasting, sodium bicarbonate wet stripping, high pressure water stripping, and wheat starch blasting). These depainting processes represent five removal method categories, namely abrasive, impact, cryogenic, thermal, and/or molecular bonding dissociation. This paper discusses the test plan and parameters for this interagency study. Several thicknesses of clad and non-clad aluminum substrates were used to prepare test specimens. Each depainting process has been assigned a specimen lot, all of which have completed three to five stripping cycles. Numerous metallurgical evaluations are underway to assess the impact of these alternative depainting processes upon the structural integrity of the substrate.

Clark-Ingram, Marceia↗
NASA NTRS1997

An Interagency Study of Depainting Techniques

Many popular and widely used paint stripping products now contain methylene chloride as their active ingredient. However, the Environmental Protection Agency (EPA) will critically curb the use of methylene chloride under an aerospace national emission standard for hazardous air pollutants (NESHAP) within the next 2-1/2 years. An effort is underway to identify and evaluate alternative depainting technologies emphasizing those believed to be both effective and environmentally benign. On behalf of the EPA and in cooperation with the U. S. Air Force (USAF), the National Aeronautics and Space Administration (NASA) is conducting a technical assessment of nine alternative technologies (i.e.: chemical stripping, two CO2 blasting processes, FLASHJET(TM) coating removal, laser stripping, plastic media blasting, sodium bicarbonate wet stripping, high-pressure water stripping, and wheat starch blasting). These depainting processes represent five removal method categories, namely abrasive, impact, cryogenic, thermal, and/or molecular bonding dissociation. This paper discusses the test plan and parameters for this interagency study. Several thicknesses of clad and non-clad aluminum substrates were used to prepare test specimens, which have been cut, cleaned, painted, and environmentally aged. Each depainting process has been assigned a specimen lot, which is now undergoing an initial strip cycle. Metallurgical impacts will be determined after these specimens complete five cycles of preparation and stripping.

Cook, B.↗
NASA NTRS2022

Qualification and Performance of a High-Efficiency Laser Transmitter for Deep-Space Optical Communications

A high-power Laser Transmitter Assembly (LTA) was developed to support the Deep Space Optical Communications (DSOC) technology demonstration being developed by the Jet Propulsion Laboratory. NASA’s Psyche Mission plans to host the DSOC flight subsystem for testing space-to-ground high-bandwidth laser communications en route to the 16 Psyche asteroid. We review the design, performance, and qualification of the LTA Engineering Model and Flight Model (EM and FM) delivered to JPL. The LTA uses a master-oscillator power amplifier (MOPA) design and delivers up to 4.5 W at 1550 nm, with a highly efficient, cladding-pumped, polarization-maintaining erbium-ytterbium fiber amplifier. The master oscillator generates a range of pulse widths and repetition rates to support modulation formats from 16- to 128-PPM for optical data transmission at >100 Mbps. The LTA was designed for high reliability and radiation hardness, and includes redundant signal and pumping paths to reduce single points of failure, hardware interlocks to ensure safe operation and protection against damage, closed-loop control of optical power, and detailed health and status via telemetry. The LTA EM and FM were subjected to unit-appropriate space qualification testing. We describe the performance testing of the EM and FM, for the characterization of key metrics such as wavelength stability, signal linewidth, optical pulse width, jitter, and extinction ratio, and polarization extinction ratio. The management of optical nonlinearities (self-phase modulation, Brillouin scattering, or pulse-to-pulse energy variation), which could result in an optical link penalty or damage to the LTA, is also detailed, and factors affecting the power efficiency are discussed.

Jaques, J.↗
NASA NTRS1994

In(X)Ga(1-X) As Strain-Layer Multiple-Quantum-Well Laser Diodes

Fabricated on InP substrates, devices operate at room temperature, emitting at wavelengths near 1.8 micrometers. By suitable modification of structure of devices, possible to achieve operation at any wavelength from 1.6 to 2.5 micrometers: this range important in lidar and in remote sensing of atmospheric gases. Quantum-well and barrier layers sandwiched between two 60-nm-thick layers of lattice-matched InGaAs. InGaAs layers sandwiched between two 150-nm-thick layers of InGaAsP. Those layers sandwiched, in turn, between InP substrate and InP cladding layer. Also layer of InGaAs atop InP cladding layers.

Forouhar, Siamak↗