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At least 37 records · Page 2

Fabrication of engineered dopant profiles in Er/Lu:YAG transparent laser ceramics via additive manufacturing

Transparent ceramic Er:YAG laser rods were fabricated via the direct ink write (DIW) method with engineered doping profiles featuring an Er-doped core with endcaps and core-clad structures. Laser rods up to 11 cm in length were produced which required development of a scalable process. To achieve this, multiple improvements were implemented, including printing the rods horizontally on a substrate, rather than vertically, eliminating the need for an external support structure and using a sacrificial drying layer to mitigate warping and defects. Highly transparent rods were achieved with optical scatter levels as low as 0.5%/cm (at 543 nm). A small refractive index difference of 5.7 ppm was measured at the interface between the Er-doped core and the Lu-doped endcaps and cladding. These results demonstrate DIW as a straightforward method for making good optical quality laser rods with engineered doping profiles to improve laser performance.

36 MATERIALS SCIENCE↗

High Power Laser Diode Array Qualification and Guidelines for Space Flight Environments

Semiconductor laser diodes emit coherent light by simulated emission generated inside the cavity formed by the cleaved end facets of a slab of semiconductor that is typically less than a millimeter in any dimension for single emitters. The diode is pumped by current injection in the p-n junction through the metallic contacts. Laser diodes emitting in the range of 0.8 micron to 1.06 micron have a wide variety of applications from pumping erbium doped fiber amplifiers, dual-clad fiber lasers, solid-state lasers used in telecom, aerospace, military, medical purposes and all the way to CD players, laser printers and other consumer and industrial products. Laser diode bars have many single emitters side by side and spaced approximately .5 mm on a single slab of semiconductor material approximately .5 mm x 10 mm. The individual emitters are connected in parallel maintaining the voltage at -2V but increasing the current to ~50-100A/bar. Stacking these laser diode bars in multiple layers, 2 to 20+ high, yields high power laser diode arrays capable of emitting several hundreds of Watts. Electrically the bars are wired in series increasing the voltage by 2V/bar but maintaining the total current at ~50-100A. These arrays are one of the enabling technologies for efficient, high power solid-state lasers. Traditionally these arrays are operated in QCW (Quasi CW) mode with pulse widths ~10-200 (mu)s and with repetition rates of ~10-200Hz. In QCW mode the wavelength and the output power of the laser reaches steady-state but the temperature does not. The advantage is a substantially higher output power than in CW mode, where the output power would be limited by the internal heating and hence the thermal and heat sinking properties of the device. The down side is a much higher thermal induced mechanical stress caused by the constant heating and cooling cycle inherent to the QCW mode.

Eegholm, Niels↗

Transversely bounded DFB lasers

Bounded distributed-feedback (DFB) lasers are studied in detail. Threshold gain and field distribution for a number of configurations are derived and analyzed. More specifically, the thin-film guide, fiber, diffusion guide, and hollow channel with inhomogeneous-cladding DFB lasers are considered. Optimum points exist and must be used in DFB laser design. Different-modes feedback and the effects of the transverse boundaries are included. A number of applications are also discussed.

Elachi, C.↗

Power enhanced frequency conversion system

A frequency conversion system includes at least one source providing a first near-IR wavelength output including a gain medium for providing high power amplification, such as double clad fiber amplifier, a double clad fiber laser or a semiconductor tapered amplifier to enhance the power output level of the near-IR wavelength output. The NFM device may be a difference frequency mixing (DFM) device or an optical parametric oscillation (OPO) device. Pump powers are gain enhanced by the addition of a rare earth amplifier or oscillator, or a Ra-man/Brillouin amplifier or oscillator between the high power source and the NFM device.

Sanders, Steven↗

Additive Manufacturing of Liquid Rocket Engine Combustion Devices: A Summary of Process Developments and Hot-Fire Testing Results

Additive Manufacturing (AM) of metals is a processing technology that has significantly matured over the last decade. For liquid propellant rocket engines, the advantages of AM for replacing conventional manufacturing of complicated and expensive metallic components and assemblies are very attractive. AM can significantly reduce hardware cost, shorten fabrication schedules, increase reliability by reducing the number of joints, and improve hardware performance by allowing fabrication of designs not feasible by conventional means. The NASA Marshall Space Flight Center (MSFC) has been involved with various forms of metallic additive manufacturing for use in liquid rocket engine component design, development, and testing since 2010. The AM technique most often used at the NASA MSFC has been powder-bed fusion or selective laser melting (SLM), although other techniques including laser directed energy deposition (DED), arc-based deposition, and laser-wire cladding techniques have also been used to develop several components. The purpose of this paper is to discuss the various internal programs at the NASA MSFC using AM to develop combustion devices hardware. To date at the NASA MSFC, combustion devices component hardware ranging in size from 100 lbf to 35,000 lbf have been designed and manufactured using SLM and deposition-based AM processes, and many of these pieces have been hot-fire tested. Combustion devices component hardware have included thrust chamber injectors, injector components such as faceplates, regeneratively-cooled combustion chambers, regeneratively-cooled nozzles, gas generator and preburner hardware, and augmented spark igniters. Ongoing and future developments for combustion devices have also included design of components sized for boost-class engines. Several design and hot-fire test iterations have been completed on these subscale and larger scale components, and a summary of these results will be presented as well.

Gradl, Paul↗

Thermal Stability of the Dot-in-Well Gain Medium for Photonic Crystal Surface Emitting Lasers

Self-assembled quantum dots (QDs) embedded in InGaAs quantum wells (QWs) are used as active regions for photonic-crystal surface-emitting lasers (PCSELs). An epitaxial regrowth method is developed to fabricate the dot-in-well (DWELL) PCSELs. Here, the epitaxial regrowth starts with the growth of a partial laser structure containing bottom cladding, waveguide, active region, and the photonic crystal (PC) layer. The PC layer is patterned to realize the cavity. Subsequently a top cladding layer is regrown to complete the laser structure. During the regrowth of the top cladding layer, the partial laser structure is subjected to high growth temperatures in excess of 600 °C resulting in an unintentional annealing of the active region. This annealing of the active region can alter the QDs by changing their size resulting in a blue shift in photoluminescence (PL) and narrowing PL emission. This effect results in the misaligning of the gain peak and the cavity resonance, resulting in sub-optimal lasing performance. DWELL active regions are known to have better thermal stability compared to both QDs and QWs and could be an ideal candidate for regrown PCSELs. We successfully demonstrate an optically-pumped epitaxially-regrown DWELL PCSEL with an emission wavelength of 1230 nm operating at room temperature. Furthermore, the DWELL active region shows excellent emission wavelength stability and intensity despite the high temperature regrowth process.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Time-Dependent 600 °C Post-Weld Heat Treatment Response of Laser-Wire-Directed Energy Deposited Austenitic Stainless Steel Claddings on Carbon Steel

Austenitic stainless steel overlay claddings are often used to protect nuclear reactor pressure vessels from corrosion. Arc welding processes are traditionally employed, which require a high heat input to bond the dissimilar metals, creating a large heat-affected zone and high residual stress that demands a lengthy stress-relieving post-weld heat treatment, up to 48 hours. High energy beam (e.g., laser, electron beam) directed energy deposition-based overlay cladding processes show promise for fabricating claddings with superior performance compared to arc welded ones because of their localized heat input; however, their necessity and time of post-weld heat treatment are currently unclear. In this research, we investigate the time dependence of a 600 C stress-relieving post-weld heat treatment of austenitic stainless steel clad on low carbon steel by laser-wire-directed energy deposition, comparing the microstructure and mechanical properties of the as-fabricated condition to 2-, 10-, and 48-hour heat treatment times. Diffusion simulations and microscopy show a gradual carburization of the stainless steel cladding and decarburization of the heat-affected zone/base metal. Nanoindentation testing shows up to a 1.8–2.69 embrittlement in the cladding and a 0.33 to 0.69 softening in the heat-affected zone after the 48-hour post-weld heat treatment. Tensile testing of the cladding composites reveals that increasing post-weld heat treatment time raises clad cracking susceptibility due to intergranular carbide formation and shows that laser-wire-directed energy deposition claddings may not require post-weld heat treatment.

Coating↗

Accurate and efficient predictions of keyhole dynamics in laser materials processing using machine learning-aided simulations

The keyhole phenomenon has been widely observed in laser materials processing, including laser welding, remelting, cladding, drilling, and additive manufacturing. Keyhole-induced defects, primarily pores, dramatically affect the performance of final products, impeding the broad use of these laser-based technologies. The formation of these pores is typically associated with the dynamic behavior of the keyhole. So far, the accurate characterization and prediction of keyhole features, particularly keyhole depth, as a function of time, has been a challenging task. In situ characterization of keyhole dynamic behavior using the synchrotron X-ray technique is informative but complicated and expensive. Current simulations are generally hindered by their poor accuracy and generalization abilities in predicting keyhole depths due to the lack of accurate laser absorptance data. In this study, we develop a machine learning-aided simulation method that accurately predicts keyhole dynamics, especially in keyhole depth fluctuations, over a wide range of processing parameters. In two case studies involving titanium and aluminum alloys, we achieve keyhole depth prediction with a mean absolute percentage error of 10 %, surpassing those simulated using the ray-tracing method with an error margin of 30 %, while also reducing computational time. This exceptional fidelity and efficiency empower our model to serve as a cost-effective alternative to synchrotron experiments. Our machine learning-aided simulation method is affordable and readily deployable for a large variety of materials, opening new doors to eliminate or reduce defects for a wide range of laser materials processing techniques.

Computational fluid dynamics↗

Continuous wave room temperature operation of the 2 $μ$m GaSb-based photonic crystal surface emitting diode lasers

Continuous wave room temperature operation of 2 μm GaSb-based photonic-crystal surface-emitting diode lasers has been realized. The deep etched square mesa devices showed threshold current densities of 500 A/cm 2 at 20 °C. The epi-side down mounted lasers generated above 10 mW of output power in the continuous wave regime and tens of milliwatts in pulses from the 200 × 200 μm 2 aperture. Here, the breakthrough in the device performance parameters was achieved thanks to a highly homogeneous air-pocket retaining epitaxial regrowth process optimized for a specifically designed antimonide diode laser heterostructure. The nanofabrication method utilizing low temperature atomic hydrogen surface cleaning yielded low disorder square lattice of droplet-shaped voids covered by uniform p-cladding layer. The laser emission spectrum as well as near/far field patterns demonstrated peculiar features presumably linked to deformation of the void shape during regrowth and formation of the array of filaments.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

High-Power Single-Mode 2.65-micron InGaAsSb/AlInGaAsSb Diode Lasers

Central to the advancement of both satellite and in-situ science are improvements in continuous-wave and pulsed infrared laser systems coupled with integrated miniaturized optics and electronics, allowing for the use of powerful, single-mode light sources aboard both satellite and unmanned aerial vehicle platforms. There is a technological gap in supplying adequate laser sources to address the mid-infrared spectral window for spectroscopic characterization of important atmospheric gases. For high-power applications between 2 to 3 micron, commercial laser technologies are unsuitable because of limitations in output power. For instance, existing InP-based laser systems developed for fiber-based telecommunications cannot be extended to wavelengths longer than 2 micron. For emission wavelengths shorter than 3 micron, intersubband devices, such as infrared quantum cascade lasers, become inefficient due to band-offset limitations. To date, successfully demonstrated singlemode GaSb-based laser diodes emitting between 2 and 3 micron have employed lossy metal Bragg gratings for distributed- feedback coupling, which limits output power due to optical absorption. By optimizing both the quantum well design and the grating fabrication process, index-coupled distributed-feedback 2.65-micron lasers capable of emitting in excess of 25 mW at room temperature have been demonstrated. Specifically, lasers at 3,777/cm (2.65 micron) have been realized to interact with strong absorption lines of HDO and other isotopologues of H2O. With minor modifications of the optical cavity and quantum well designs, lasers can be fabricated at any wavelength within the 2-to-3-micron spectral window with similar performance. At the time of this reporting, lasers with this output power and wavelength accuracy are not commercially available. Monolithic ridge-waveguide GaSb lasers were fabricated that utilize secondorder lateral Bragg gratings to generate single-mode emission from InGaAsSb/ AlInGaAsSb multi-quantum well structures. The device fabrication utilizes etched index-coupled gratings in the top AlGaAsSb cladding of the laser chip along the ridge waveguide, whereas commercial lasers that emit close to this wavelength include loss-coupled metal gratings that limit the output power of the laser. Semiconductor-laser-based spectrometers can be used to replace gas sensors currently used in industry and government. With the availability of high-power laser sources at mid-infrared wavelengths, sensors can target strong fundamental gas absorption lines to maximize instrument sensitivity.

Frez, Clifford F.↗

Corrosion Resistance of 309L Stainless Steel Claddings on Carbon Steel Produced with Wire-Fed Directed Energy Deposition

Additive manufacturing (AM) tools are capable of applying overlay austenitic stainless steel (SS) claddings to carbon steel components. The benefits of this approach over arc welding include a smaller heat-affected zone, residual stress reduction, and material savings. In particular, wire-directed energy deposition is a suitable technique because of its low material cost and high rate of production compared to other AM methods. However, metallurgical variations in composition, phase fraction, and microsegregation can potentially influence the corrosion behavior of such claddings. In this work, 309L SS is clad on carbon steel substrates and electrochemical methods are used to measure their general and pitting corrosion resistance in simulated marine environments (3.5 wt% NaCl solutions). Two-layer claddings are fabricated with four laser powers to understand the effects of bulk chemical composition, austenite/δ-ferrite phase fractions, and individual phase compositions on corrosion behavior. The two-layer claddings are compared to a single-layer cladding, wrought 304 SS, and the carbon steel substrate for a comprehensive assessment of corrosion performance. The two-layer claddings are remarkably resistant to general corrosion in the 3.5 wt% NaCl environment because of their high Cr content (21.6 wt% to 23.3 wt% Cr). The single-layer cladding exhibits localized corrosion at unmixed Fe-rich peninsulas that originate at the dissimilar metal boundary and protrude into the first cladding layer. All two-layer claddings possess higher pitting corrosion resistance than wrought 304 SS, demonstrating their effectiveness as a corrosion-resistant barrier. Here, the pitting corrosion resistance is superior for claddings made with lower laser powers, due to low dilution and greater δ-ferrite contents.

36 MATERIALS SCIENCE↗

Observations and consequences of nonuniform aluminum concentrations in the channel regions of AlGaAs channeled-substrate-planar lasers

Compositional changes in the n-clad layer within the channel region of channel substrate planar (CSP) type semiconductor lasers have been observed. As a consequece, a large optical cavity (LOC) or an enhanced substrate loss (ESL) version of the CSP geometry may result, both of which may have significantly different characteristics from those of a conventional CSP laser. The CSP-LOC generally has a larger near-field spot size, while the ESL-CSP is characterized by an off-axis, asymmetric far-field pattern.

Evans, Gary A.↗

Development of Advanced Laser Diode Sources

The design and operation of InGaAs-GaAs-AlGaAs asymmetric cladding ridge waveguide distributed Bragg reflector lasers is presented. Targeted for the remote sensing of water vapor with absorption lines in the lambda approximately 930 nm region, these devices operate CW with threshold currents as low as 11 MA and slope efficiencies as high as 0.37 W/A. Tbey also operate with over 30-dB side-mode suppression, and the typical CW characteristic temperature, T(sub o), is 95 K.

Coleman, J. J.↗

Semiconductor structure and devices

Semiconductor devices such as lasers which include a substrate with a channel therein with a clad layer overlying the substrate and filling the channel exhibit irregularities such as terraces in the surface of the clad layer which are detrimental to device performance. These irregularities are substantially eliminated by forming the channel in a surface of a buffer layer greater than about 4 micrometers thick on the substrate and forming the clad layer over the buffer layer and the channel. CW lasers incorporating the principles of the invention exhibit the highest output power in a single spatial mode and maximum output power which have been observed to date.

Dinkel, Nancy A.↗

InGaAsP/InP laser development for single-mode, high-data-rate communications

Materials studies as well as general and specific device development were carried out in the InGaAsP system. A comparison was made of three standard methods of evaluating substrate quality by means of dislocation studies. A cause of reduced yield of good wafers, the pullover of melt from one bin to the next, has been analyzed. Difficulties with reproducible zinc acceptor doping have been traced to segregation of zinc in the In/Zn alloy used for the doping source. Using EBIC measurments, the pn junction was shown to drift in location depending on factors not always under control. An analysis of contact structures by SIMS showed that the depth to which the sintered Au/Zn contact penetrates into the structure is typically 0.13 microns, or well within the cap layer and out of the p-type cladding and thus not deleterious to laser prformance. The problem of single-mode laser development was investigated and it was shown to be related to the growth habit over four different possible substrate configurations. The fabrication of constricted double heterojunctions, mesa stripe buried heterostructures, and buried heterostructures was discussed, and measurements were presented on the device properties of single-mode buried heterostructure lasers. Results include single spectral line emission at 3 mW and a threshold current of 60 mA.

Ladany, I.↗

Rolling Behavior of Surface Tagged Aluminum 6061 using Photoluminescent Oxides

Physical tagging of nuclear fuel is potentially one way of tracking throughout the fuel lifecycle. The process of tagging can take many forms, but one promising method is to embed a small amount of photoluminescent particles in the surface of a material which are not detectable under normal illumination but are readily visible under excitation by ultraviolet light. The goal of this project was to explore the potential to tag simulated nuclear fuel cladding with small ceramic particles, via laser beam welding or gas tungsten arc welding, and measure the photoluminescent response. Surface tagging using this method has demonstrated viability and detectability throughout this project; work in FY24 focused on the survivability of these tags through subsequent deformation processing similar to what taggants in a fuel manufacturing environment would be subjected to. This work demonstrated that particles are readily visible in the as-welded state (i.e., before subsequent rolling treatment to represent mechanical processing of a fuel material), but visibility is reduced as the deformation is induced. Despite the reduction in photoluminescence, the taggants are still visible after rolling processes are performed, making this surface tagging technique a promising candidate for nuclear fuel cladding tagging. This work demonstrated, though, that targeted optimization work would be necessary to develop a robust taggant depending on the fidelity and luminescent properties required.

36 MATERIALS SCIENCE↗

Laser materials for the 0.67-microns to 2.5-microns range

Basic requirements for obtaining injection laser action in III-V semiconductors are discussed briefly. A detailed review is presented of materials suitable for lasers emitting at 0.67, 1.44, 1.93, and 2.5 microns. A general approach to the problem is presented, based on curves of materials properties published by Sasaki et al. It is also shown that these curves, although useful, may need correction in certain ranges. It is deduced that certain materials combinations, either proposed in the literature or actually tried, are not appropriate for double heterostructure lasers, because the refractive index of the cladding material is higher than the index of the active material, thus resulting in no waveguiding, and high threshold currents. Recommendations are made about the most promising approach to the achievement of laser action in the four wavelengths mentioned above.

Toda, Minoru↗

Compact Hybrid Laser Rod and Laser System

A hybrid fiber rod includes a fiber core and inner and outer cladding layers. The core is doped with an active element. The inner cladding layer surrounds the core, and has a refractive index substantially equal to that of the core. The outer cladding layer surrounds the inner cladding layer, and has a refractive index less than that of the core and inner cladding layer. The core length is about 30 to 2000 times the core diameter. A hybrid fiber rod laser system includes an oscillator laser, modulating device, the rod, and pump laser diode(s) energizing the rod from opposite ends. The rod acts as a waveguide for pump radiation but allows for free-space propagation of laser radiation. The rod may be used in a laser resonator. The core length is less than about twice the Rayleigh range. Degradation from single-mode to multi-mode beam propagation is thus avoided.

Busch, George E.↗