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At least 37 records · Page 2

NbN/MgO/NbN SIS tunnel junctions for submm wave mixers

The authors report on the fabrication and testing of all-refractory NbN/MgO/NbN SIS (superconductor-insulator-superconductor) tunnel junctions for use as high-frequency mixers. Progress in the development of techniques for the fabrication of submicron-area tunnel junctions is described. Junction structures which have been investigated include mesa, crossline, and edge geometries. Using reactive sputtering techniques, NbN tunnel junctions with critical currents in excess of 104 A/sq cm have been fabricated with Vm values as high as 65 mV and areas down to 0.1 sq micron. Specific capacitance measurements on NbN/MgO/NbN mesa-type tunnel junctions give values in the range 60-90 fF/sq micron. These SIS tunnel junctions have been integrated with antennas and coupling structures for mixer tests in a waveguide receiver at 207 GHz. Preliminary mixer results are reported.

Stern, J. A.

The effects of ion gun beam voltage on the electrical characteristics of NbCN/PbBi edge junctions

The authors have succeeded in fabricating high-quality submicron NbCN edge junctions using a technique which is commonly used to make Nb edge junctions. A modified commercial ion gun was used to cut an edge in SiO2/NbCN films partially covered with photoresist. An insulating barrier was then formed on the exposed edge by reactive ion beam oxidation, and a counterelectrode of PbBi was deposited. The electrical quality of the resulting junctions was found to be strongly influenced by the ion beam acceleration voltages used to cut the edge and to oxidize it. For low ion beam voltages, the junction quality parameter was as high as Vm = 55 mV (measured at 3 mV), but higher ion beam voltages yielded strikingly poorer quality junctions. In light of the small coherence length of NbN, the dependence of the electrical characteristics on ion beam voltage is presumably due to mechanical damage of the NbCN surface. In contrast, for similar ion beam voltages, no such dependence was found for Nb edge junctions.

Lichtenberger, A. W.

Incompressible Turbulent Wing-Body Junction Flow

The overall objective of this study is to contribute to the optimized design of fan bypass systems in advanced turbofan engines. Increasing the engine bypass ratios have provided a major boost in engine performance improvement over the last fifty years. An engine with high bypass ratio (11-16:1) such as the Advanced Ducted Propulsion (ADP) is being developed and is expected to provide an additional 25% improvement in overall efficiency over the early turbofans. Such significant improvements in overall efficiency would reduce the cost per seat mile, which is a major government and Industry challenge for the 21th century. The research is part of the Advanced Subsonic Technology (AST) program that involves a NASA, U.S. Industry and FAA partnership with the goal of a safe and highly productive global air transportation system. The immediate objective of the study is to perform numerical simulation of duct-strut interactions to elucidate the loss mechanisms associated with this configuration that is typical of advanced turbofan engines such as ADP. However, at present experimental data for a duct-strut configuration are not available. Thus, as a first step a wing-body junction flow would be studied and is the specific objective of the present study. At the outset it is to be recognized that while duct-strut interaction flow is similar to that of wing-body junction flows, there are some differences owing to the presence of a wall at both ends of the strut. Likewise, some differences are due to the sheared inflow (as opposed to a uniform inflow) velocity profile. It is however expected that some features of a wing-body junction flow would persist. Next, some of the salient aspects of the complex flow near a wing-body junction, as revealed by various studies reported in the literature will be reviewed. One of the principle characteristics of the juncture flow, is the presence of the mean flow components in a plane perpendicular to the direction of the oncoming free-stream flow. The lateral curvature of the wing/strat causes the oncoming turbulent layer to skew about am axis (x-axis) parallel to the plane (xz-plane) of the mean shear. This is the principle mechanism for the generation of secondary flow. Such skew-induced secondary flows are slow to be attenuated by Reynolds stresses. Additional contribution to the generation of secondary flow comes from anisotropies in Reynolds stresses. Upstream of the strut, the mean-vorticity is directed span wise (along the y-direction). The presence of secondary flow in the vicinity of the strut causes the vorticity to stretch around the obstacle in a horse-shoe shape, with each leg having a vorticity of the opposite sense. The blockage effect of the strut imposes a severe adverse pressure gradient on the oncoming turbulent shear layer, causing boundary layer separation ahead of the leading edge, resulting in a vortex that rolls up and flows downstream into the juncture region. The separation vortices trailing in the wake of the wing can alter the lift or drag characteristics of the surfaces downstream of the wing-body juncture. Likewise, on submarines, the wake flow behind the appendage can degrade the performance of the propeller located downstream. The complex nature of this flow is caused by the presence of all six components of Reynolds stresses. Devenport and Simpson report that in the vicinity of the horse-shoe vortex there is intense recirculation with turbulent stresses being much larger than those normally observed in turbulent flows. These features contribute to making this flow a challenge to predict numerically. Some of the past studies provide useful insights into this flow that would guide our numerical efforts. In measurements reported by Shabaka and Bradshaw, the eddy viscosity tensor is seen to be non-isotropic and has negative components in certain regions. In an effort to evaluate the closure assumptions of various turbulence models, Devenport and Simpson used their own extensive measurements in juncture flows around the nose of a wing-body junction. Measured values of mean-velocity and/or turbulence kinetic energy was used to predict the magnitude of the shear stress vector. Algebraic stress models performed the best followed by Cebeci-Smith eddy viscosity model. The flow is reported to be dominated by a pressure field produced by the wing and the velocity field generated by the horseshoe vortex that is wrapped around the junction between the wing and wall. Kubendran et al. conclude from an experimental study that the shape of leading edge of the wing as characterized by its slenderness ratio is a major factor in determining the flow fields in the juncture region. The more thinner the leading edge of the juncture, the weaker the horseshoe vortex is. Also, with a slender leading edge, the secondary flow in the juncture would be due mainly to the cross-stream gradients of Reynolds stresses rather than due to a lateral skewing of the shear layer.

Krishnamurthy, R.

Electronic Properties of Carbon Nanotubes and Junctions

Metallic and semiconducting Single Wall Carbon Nanotubes (CNT) have recently been characterized using scanning tunneling microscopy (STM) and the manipulation of individual CNT has been demonstrated. These developments make the prospect of using CNT as molecular wires and possibly as electronic devices an even more interesting one. We have been modeling various electronic properties such as the density of states and the transmission coefficient of CNT wires and junctions. These studies involve first calculating the stability of junctions using molecular dynamics simulations and then calculating the electronic properties using a pi-electron tight binding Hamiltonian. We have developed the expertise to calculate the electronic properties of both finite-sized CNT and CNT systems with semi-infinite boundary conditions. In this poster, we will present an overview of some of our results. The electronic application of CNT that is most promising at this time is their use as molecular wires. The conductance can however be greatly reduced because of reflection due to defects and contacts. We have modeled the transmission through CNT in the presence of two types of defects: weak uniform disorder and strong isolated scatterers. We find that the conductance is affected in significantly different manners due to these defects Junctions of CNT have also been imaged using STM. This makes it essential to derive rules for the formation of junctions between tubes of different chirality, study their relative energies and electronic properties. We have generalized the rules for connecting two different CNT and have calculated the transmission and density of states through CNT junctions. Metallic and semiconducting CNT can be joined to form a stable junction and their current versus voltage characteristics are asymmetric. CNT are deformed by the application of external forces including interactions with a substrate or other CNT. In many experiments, these deformation are expected to occur naturally. We will present some preliminary results of our calculations of the modification of CNT electronic properties as a result of deformations.

Anantram, M. P.

Fermi Velocity Dependent Critical Current in Ballistic Bilayer Graphene Josephson Junctions

We perform transport measurements on proximitized, ballistic, bilayer graphene Josephson junctions (BGJJs) in the intermediate-to-long junction regime (L > ξ). We measure the device’s differential resistance as a function of bias current and gate voltage for a range of different temperatures. The extracted critical current IC follows an exponential trend with temperature: exp(−k B T/δE). Here δE = ħν F /2πL: an expected trend for intermediate-to-long junctions. From δE, we determine the Fermi velocity of the bilayer graphene, which is found to increase with gate voltage. Simultaneously, we show the carrier density dependence of δE, which is attributed to the quadratic dispersion of bilayer graphene. This is in contrast to single layer graphene Josephson junctions, where δE and the Fermi velocity are independent of the carrier density. The carrier density dependence in BGJJs allows for additional tuning parameters in graphene-based Josephson junction devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND

Proximity-Coupled High-Tc Josephson Junctions: Do They Exist?

A significant portion of the worldwide effort to develop high-Tc Josephson junctions for electronic applications has been dedicated to superconductor-normal-superconductor (SNS) junctions. Numerous groups have reported nominally-SNS junctions with a variety of geometries and normal interlayers. Until recently, the electrical properties of these junctions have been interpreted almost exclusively in terms of conventional proximity effect theory, which describes very well the behavior of low-Tc SNS devices. It is now clear, however, that it is only recently that proximity effect theory was successfully applied to any high-Tc SNS junctions are far better understood by assuming that transport occurs through unintended pinholes in the normal interlayers [1], an idea that is rapidly gaining in acceptance.

Josephson

Shape-persistent ladder molecules exhibit nanogap-independent conductance in single-molecule junctions

Molecular electronic devices require precise control over the flow of current in single molecules. However, the electron transport properties of single molecules critically depend on dynamic molecular conformations in nanoscale junctions. Here, in this work, we report a unique strategy for controlling molecular conductance using shape-persistent molecules. Chemically diverse, charged ladder molecules, synthesized via a one-pot multicomponent ladderization strategy, show a molecular conductance (d[log( G/G 0 )]/d x ≈ -0.1 nm -1 ) that is nearly independent of junction displacement, in stark contrast to the nanogap-dependent conductance (d[log( G/G 0 )]/d x ≈ -7 nm -1 ) observed for non-ladder analogues. Ladder molecules show an unusually narrow distribution of molecular conductance during dynamic junction displacement, which is attributed to the shape-persistent backbone and restricted rotation of terminal anchor groups. These principles are further extended to a butterfly-like molecule, thereby demonstrating the strategy's generality for achieving gap-independent conductance. Overall, our work provides important avenues for controlling molecular conductance using shape-persistent molecules. Achieving robust and controllable conductance in single-molecule junctions is challenging due to the dynamic nature of molecular conformations that fluctuate over operational timescales. A strategy using shape-persistent molecules has now been developed that demonstrates nearly junction-displacement-independent conductance, providing a stable solution for single-molecule electronic properties.

molecular electronics

Optically induced bistable states in metal/tunnel-oxide/semiconductor /MTOS/ junctions

A new switching phenomenon in metal-oxide semiconductor tunnel junction has been discovered. With a sufficiently large negative bias applied to the electrode, incident visible light of intensity greater than about 1 microW/sq cm causes the reverse-biased junction to switch from a low-current to a high-current state. It is believed that hot-electron-induced impact ionization provides the positive feedback necessary for switching, and causes the junction to remain in its high-current state after the optical excitation is removed. The junction may be switched back to the low-current state electrically. The basic junction characteristics have been measured, and a simple model for the switching phenomenon has been developed.

Lai, S. K.

Three-dimensional models of conventional and vertical junction laser-photovoltaic energy converters

Three-dimensional models of both conventional planar junction and vertical junction photovoltaic energy converters have been constructed. The models are a set of linear partial differential equations and take into account many photoconverter design parameters. The model is applied to Si photoconverters; however, the model may be used with other semiconductors. When used with a Nd laser, the conversion efficiency of the Si vertical junction photoconverter is 47 percent, whereas the efficiency for the conventional planar Si photoconverter is only 17 percent. A parametric study of the Si vertical junction photoconverter is then done in order to describe the optimum converter for use with the 1.06-micron Nd laser. The efficiency of this optimized vertical junction converter is 44 percent at 1 kW/sq cm.

Heinbockel, John H.

Characteristics of annealed p/n junctions between GaAs and Si(100)

Electrical characteristics of a GaAs(p)/Si(n) interface were determined from capacitance-voltage, current-voltage, and secondary ion mass spectroscopy (SIMS) measurements and compared to those on GaAs(p) epitaxial layers on GaAs(n) substrates. The comparison was made between the junctions as grown, and after an anneal at 850 C for 20 min in 10 percent forming gas under an As overpressure. For the GaAs/Si junction the ideality factor changed from 2 or larger to 1.5 and the apparent intercept voltage changed from 2.5 to 1.3 V after annealing. For the GaAs homojunction, the intercept voltage increased from 1.1 to 1.3 V. In addition, the excess current in the forward and reverse bias conditions dropped drastically in the heterojunction. No movement of the metallurgical junction was discernible to within the resolution capability of SIMS. The junction properties obtained by annealing suggest an atomic restructuring of the Si(100) interface during growth or annealing. These new results raise the possibility that the GaAs/Si interface can be made into an electrically viable junction and incorporated into active devices.

Unlu, M. S.

Numerical study of three-dimensional separation and flow control at a wing/body junction

The problem of three-dimensional separation and flow control at a wing/body junction has been investigated numerically using a three-dimensional Navier-Stokes code. The numerical code employs an algebraic grid generation technique for generating the grid for unmodified junction and an elliptic grid generation technique for filleted fin junction. The results for laminar flow past a blunt fin/flat plate junction demonstrate that after grid refinement, the computations agree with experiment and reveal a strong dependency of the number of vortices at the junction on Mach number and Reynolds number. The numerical results for pressure distribution, particle paths and limiting streamlines for turbulent flow past a swept fin show a decrease in the peak pressure and in the extent of the separated flow region compared to the laminar case. The results for a filleted juncture indicate that the streamline patterns lose much of their vortical character with proper filleting. Fillets with a radius of three and one-half times the fin leading edge diameter or two times the incoming boundary layer thickness, significantly weaken the usual necklace interaction vortex for the Mach number and Reynolds number considered in the present study.

Ash, Robert L.

Performance of all-NbN superconductive tunnel junctions as mixers at 205 GHz

Small-area (1x1 sq micron) high-current-density NbN-MgO-NbN tunnel junctions with I-V characteristics suitable for high frequency mixers were fabricated. These junctions are integrated with superconducting microstrip lines designed to resonate out the large junction capacitance. The mixer gain and noise performance were studied near 205 GHz as a function of the inductance provided by the microstrip. This has yielded values of junction capacitance of 85 fF/sq microns and magnetic penetration depth of 3800 angstroms. Mixer noise as low as 133 K has been obtained for properly tuned junctions. This is the best noise performance ever reported for an NbN SIS mixer.

Mcgrath, W. R.

Submicron area NbN/MgO/NbN tunnel junctions for SIS mixer applications

The development of submicron area mixer elements for operation in the submillimeter wave range is discussed. High-current-density NbN/MgO/NbN tunnel junctions with areas down to 0.1 sq microns have been fabricated in both planar and edge geometries. The planar junctions were fabricated from in situ deposited trilayers using electron-beam lithography to pattern submicron area mesas. Modifications of fabrication techniques used in larger-area NbN tunnel junctions are required and are discussed. The NbN/MgO/NbN edge junction process using sapphire substrates has been transferred to technologically important quartz substrates using MgO buffer layers to minimize substrate interactions. The two junction geometries are compared and contrasted in the context of submillimeter wave mixer applications.

Leduc, H. G.

Nb/Al-Al2O3/Nb junctions with inductive tuning elements for a very low noise 205-250 GHz heterodyne receiver

The superconductor-insulator-superconductor (SIS) junction is the most sensitive nonlinear element for millimeter-wave heterodyne detection. An Nb/Al-Al203/Nb junction fabrication process has been developed which allows the use of planar tuning circuits integrated with the junctions. These tuning elements permit the use of junctions with relatively large areas and small current densities with excellent results. Recent measurements have yielded a double sideband receiver noise temperature less than 50 K from 205 to 240 GHz and 44 K at 230 GHz. This Nb/Al-Al203/Nb trilayer technology is also being extended to the fabrication of sub-square-micron area planar junctions for submillimeter-wavelengths.

Lichtenberger, Arthur W.

Quasi-optical Josephson-junction oscillator arrays

Josephson junctions are natural voltage-controlled oscillators capable of generating submillimeter-wavelength radiation, but a single junction usually can produce only 100 nW of power and often has a broad spectral linewidth. The authors are investigating 2D quasi-optical power combining arrays of 103 and 104 NbN/MgO/NbN and Nb/Al-AlO(x)/Nb junctions to overcome these limitations. The junctions are dc-biased in parallel and are distributed along interdigitated lines. The arrays couple to a resonant mode of a Fabry-Perot cavity to achieve mutual phase-locking. The array configuration has a relatively low impedance, which should allow the capacitance of the junctions to be tuned out at the oscillation frequency.

Stern, J. A.

A multilayered approach to superconducting tunnel junction x ray detectors

'First generation' superconducting tunnel junction X-ray detectors (characterized by a single tunnel junction in direct contact with its substrate, with totally external amplification) remain more than an order of magnitude away from their theoretical energy resolutions which are in the order of eV's. The difficulties that first generation devices are encountering are being attacked by a 'second generation' of superconducting X-ray detector designs including quasiparticle trapping configurations and Josephson junction arrays. A second generation design concept, the multilayered superconducting tunnel junction X-ray detector, consisting of tens to hundreds of tunnel junctions stacked on top of one another (a superlattice), is presented. Some of the possibilities of this engineered materials approach include the tuning of phonon transmission characteristics of the material, suppression of parasitic quasiparticle trapping and intrinsic amplification.

Rippert, E. D.

190-GHz radiation from a quasioptical Josephson junction array

At 190 GHz, 0.36 micro W has been detected from an 11 x 58 array of niobium Josephson junctions. The power is radiated directly into free space above the surface of the two-dimensional array of junctions. Detection is made by a commercial bolometer outside the array cryostat. The junctions in the array are closely spaced in the y-dimension, but spaced by more than one-half wavelength in the x-direction. This asymmetry results in mutual phase-locking between adjacent junctions suitable for the production of y-polarized radiation. The resonance and asymmetry also result in a reasonable impedance match between the Josephson junctions and the free-space radiation mode.

ARRAY CRYOSTAT

Straw man trade between multi-junction, gallium arsenide, and silicon solar cells

Multi-junction (MJ), gallium arsenide (GaAs), and silicon (Si) solar cells have respective test efficiencies of approximately 24%, 18.5% and 14.8%. Multi-junction and gallium arsenide solar cells weigh more than silicon solar cells and cost approximately five times as much per unit power at the cell level. A straw man trade is performed for the TRMM spacecraft to determine which of these cell types would have offered an overall performance and price advantage to the spacecraft. A straw man trade is also performed for the multi-junction cells under the assumption that they will cost over ten times that of silicon cells at the cell level. The trade shows that the TRMM project, less the cost of the instrument, ground systems and mission operations, would spend approximately $552 thousand dollars per kilogram to launch and service science in the case of the spacecraft equipped with silicon solar cells. If these cells are changed out for gallium arsenide solar cells, an additional 31 kilograms of science can be launched and serviced at a price of approximately $90 thousand per kilogram. The weight reduction is shown to derive from the smaller area of the array and hence reductions in the weight of the array substrate and supporting structure. If the silicon solar cells are changed out for multi-junction solar cells, an additional 45 kilograms of science above the silicon base line can be launched and serviced at a price of approximately $58 thousand per kilogram. The trade shows that even if the multi-junction arrays are priced over ten times that of silicon cells, a price that is much higher than projected, that the additional 45 kilograms of science are launched and serviced at $182 thousand per kilogram. This is still much less than original $552 thousand per kilogram to launch and service the science. Data and qualitative factors are presented to show that these figures are subject to a great deal of uncertainty. Nonetheless, the benefit of the higher efficiency solar cells for TRMM is far greater than the uncertainties in the analysis.

Gaddy, Edward M.