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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2012

High Operating Temperature Midwave Quantum Dot Barrier Infrared Detector (QD-BIRD)

The nBn or XBn barrier infrared detector has the advantage of reduced dark current resulting from suppressed Shockley-Read-Hall (SRH) recombination and surface leakage. High performance detectors and focal plane arrays (FPAs) based on InAsSb absorber lattice matched to GaSb substrate, with a matching AlAsSb unipolar electron barrier, have been demonstrated. The band gap of lattice-matched InAsSb yields a detector cutoff wavelength of approximately 4.2 ??m when operating at ~150K. We report results on extending the cutoff wavelength of midwave barrier infrared detectors by incorporating self-assembled InSb quantum dots into the active area of the detector. Using this approach, we were able to extend the detector cutoff wavelength to ~6 ?m, allowing the coverage of the full midwave infrared (MWIR) transmission window. The quantum dot barrier infrared detector (QD-BIRD) shows infrared response at temperatures up to 225 K.

quantum dot↗
NASA NTRS1976

Construction of prototypes of a new class of infrared detectors

A class of infrared detectors is proposed and experimental results are presented for a prototype device. The material used is LaF3, an ionic conductor with a capacitance that varies exponentially with temperature. The detectivity of a prototype detector is estimated from measured signal voltages and incident power, and a Johnson noise voltage calculated from the measured resistance. For the parameters characterizing this device the estimated detectivity is consistent with a theoretical prediction. The theory further predicts an optimum detectivity for much thinner devices than the prototypes.

Sher, A.↗
NASA NTRS1976

LaF3 infrared detector

A class of infrared detectors is proposed, and experimental results are presented for a prototype device. The material used is LaF3, an ionic conductor with a capacitance that varies exponentially with temperature. The detectivity of a prototype detector is estimated from measured signal voltages and incident power, and a Johnson noise voltage is calculated from the measured resistance. At a modulation frequency of 20 Hz, the estimated detectivity is about 2 million cm/sq root Hz/W. For the parameters characterizing this device, the estimated detectivity is consistent with a theoretical prediction. The theory further predicts an optimum detectivity of about 1 billion cm/sq root Hz/W for much thinner devices than the prototypes.

Sher, A.↗
NASA NTRS1983

Si:Bi switched photoconducttor infrared detector array

A multiplexed infrared detector array is described. The small demonstration prototype consisted of two cryogenically cooled, bismuth doped silicon, extrinsic photoconductor pixels multiplexed onto a single output channel using an on focal plane switch integration sampling technique. Noise levels of the order of 400 to 600 rms electrons per sample were demonstrated for this chip and wire hybrid version.

Eakin, C. E.↗
NASA NTRS1991

Effect of space exposure on pyroelectric infrared detectors

Twenty pyroelectric type infrared detectors were flown onboard the Long Duration Exposure Facility (LDEF). The detector chips were of three different pyroelectric materials: lithium-tantalate, strontium-barium-niobate, and triglycine-sulfide. The experiment was passive; no measurements were taken during the flight. Performance of the detectors was measured before and after flight. Postflight measurements revealed that detectors made of lithium-tantalate and strontium-barium-niobate suffered no measureable loss in performance. Detectors made of triglycine-sulfide suffered complete loss of performance, but so did the control samples of the same material. Repoling of the triglycine-sulfide failed to revive the detectors.

Robertson, James B.↗
NASA NTRS1995

Active Pyroelectric Infrared Detector

A noncontact pyroelectric infrared detector is described. A pyroelectric film that also has piezoelectric properties is held in place so that it is free to vibrate. It is electrically stimulated to vibrate at a resonance frequency. The vibrating film forms part of a balanced bridge circuit. As thermal radiation impinges on the film the pyroelectric effect causes the resonance frequency to change, thereby unbalancing the bridge circuit. A differential amplifier tracks the change in voltage across the bridge. The resulting voltage signal is further processed by a bandpass filter and a precision rectifier. The device allows for DC or static temperature measurements without the use of a mechanical chopping device.

Zuckerwar, Allan J.↗
NASA NTRS2009

Fundamental Limits on the Imaging and Polarisation Properties of Far-Infrared Detectors

Far-infrared bolometric detectors are used extensively in ground-based and space-borne astronomy, and thus it is important to understand their optical behaviour precisely. We have studied the intensity and polarisation response of free-space bolometers, and shown that when the size of the absorber is reduced below a wavelength, the response changes from being that of a classical optical detector to that of a few-mode antenna. We have calculated the modal content of the reception patterns, and found that for any volumetric detector having a side length of less than a wavelength, three magnetic and three electric dipoles characterize the behaviour. The size of the absorber merely determines the relative strengths of the contributions. The same formalism can be applied to thin-film absorbers, where the induced current is forced to flow in a plane. In this case, one magnetic and two electric dipoles characterize the behaviour. The ability to model easily the intensity, polarisation, and straylight characteristics of electrically-small detectors will be of great value when designing high-performance polarimetric imaging arrays.

Thomas, Christopher N.↗
NASA NTRS2008

Infrared Detector Activities at NASA Langley Research Center

Infrared detector development and characterization at NASA Langley Research Center will be reviewed. These detectors were intended for ground, airborne, and space borne remote sensing applications. Discussion will be focused on recently developed single-element infrared detector and future development of near-infrared focal plane arrays (FPA). The FPA will be applied to next generation space-based instruments. These activities are based on phototransistor and avalanche photodiode technologies, which offer high internal gain and relatively low noise-equivalent-power. These novel devices will improve the sensitivity of active remote sensing instruments while eliminating the need for a high power laser transmitter.

Abedin, M. N.↗
NASA NTRS1986

Proceedings of the Second Infrared Detector Technology Workshop

The workshop focused on infrared detector, detector array, and cryogenic electronic technologies relevant to low-background space astronomy. Papers are organized into the following categories: discrete infrared detectors and readout electronics; advanced bolometers; intrinsic integrated infrared arrays; and extrinsic integrated infrared arrays. Status reports on the Space Infrared Telescope Facility (SIRTF) and Infrared Space Observatory (ISO) programs are also included.

Mccreight, C. R.↗
NASA NTRS1990

Anomalous Polarization May Improve Infrared Detectors

New configurations proposed for quantum-well devices. Simplifies alignment, increases sensitivity, and opens up more possibilities in design of quantum-well detectors of infrared radiation. In detector made according to proposed concept, light incident broadside on front surface absorbed. No special waveguide structures required.

Yang, Chan-Lon↗
NASA NTRS1994

Resonant infrared detector with substantially unit quantum efficiency

A resonant infrared detector includes an infrared-active layer which has first and second parallel faces and which absorbs radiation of a given wavelength. The detector also includes a first tuned reflective layer, disposed opposite the first face of the infrared-active layer, which reflects a specific portion of the radiation incident thereon and allows a specific portion of the incident radiation at the given wavelength to reach the infrared-active layer. A second reflective layer, disposed opposite the second face of the infrared-active layer, reflects back into the infrared-active layer substantially all of the radiation at the given wavelength which passes through the infrared-active layer. The reflective layers have the effect of increasing the quantum efficiency of the infrared detector relative to the quantum efficiency of the infrared-active layer alone.

Farhoomand, Jam↗
NASA NTRS2015

High Operating Temperature Barrier Infrared Detector with Tailorable Cutoff Wavelength

A barrier infrared detector with absorber materials having selectable cutoff wavelengths and its method of manufacture is described. A GaInAsSb absorber layer may be grown on a GaSb substrate layer formed by mixing GaSb and InAsSb by an absorber mixing ratio. A GaAlAsSb barrier layer may then be grown on the barrier layer formed by mixing GaSb and AlSbAs by a barrier mixing ratio. The absorber mixing ratio may be selected to adjust a band gap of the absorber layer and thereby determine a cutoff wavelength for the barrier infrared detector. The absorber mixing ratio may vary along an absorber layer growth direction. Various contact layer architectures may be used. In addition, a top contact layer may be isolated into an array of elements electrically isolated as individual functional detectors that may be used in a detector array, imaging array, or focal plane array.

Ting, David Z.↗
NASA NTRS1985

Extension of long wavelength response by modulation doping in extrinsic germanium infrared detectors

A new concept for infrared detectors based on multilayer epitaxy and modulation doping has been investigated. This permits a high doping concentration and lower excitation energy in the photodetecting layer as is necessary for longer wavelength response, without incurring the detrimental effects of increased dark current and noise as would be the case with conventional detector designs. Germanium photodetectors using conventional materials and designs have a long wavelength cutoff in the infrared at 138 microns, which can only be extended through the inconvenient application of mechanical stress or magnetic fields. As a result of this approach which was arrived at from theoretical considerations and subsequently demonstrated experimentally, the long wavelength cutoff for germanium extrinsic detectors was extended beyond 200 microns, as determined by direct infrared optical measurements.

Hadek, V.↗
NASA NTRS2002

Heated Surface Temperatures Measured by Infrared Detector in a Cascade Environment

Investigators have used infrared devices to accurately measure heated surface temperatures. Several of these applications have been for turbine heat transfer studies involving film cooling and surface roughness, typically, these measurements use an infrared camera positioned externally to the test section. In cascade studies, where several blades are used to ensure periodic flow, adjacent blades block the externally positioned camera's views of the test blade. To obtain a more complete mapping of the surface temperatures, researchers at the NASA Glenn Research Center fabricated a probe with an infrared detector to sense the blade temperatures. The probe size was kept small to minimize the flow disturbance. By traversing and rotating the probe, using the same approach as for total pressure surveys, one can find the blade surface temperatures. Probe mounted infrared detectors are appropriate for measuring surface temperatures where an externally positioned infrared camera is unable to completely view the test object. This probe consists of a 8-mm gallium arsenide (GaAs) lens mounted in front of a mercury-cadmium-zinc-tellurium (HgCdZnTe) detector. This type of photovoltaic detector was chosen because of its high sensitivity to temperature when the detector is uncooled. The particular application is for relatively low surface temperatures, typically ambient to 100 C. This requires a detector sensitive at long wavelengths. The detector is a commercial product enclosed in a 9-mm-diameter package. The GaAs lens material was chosen because of its glass-like hardness and its good long-wavelength transmission characteristics. When assembled, the 6.4-mm probe stem is held in the traversing actuator. Since the entire probe is above the measurement plane, the flow field disturbance in the measurement plane is minimized. This particular probe body is somewhat wider than necessary, because it was designed to have replaceable detectors and lenses. The signal for the detector is fed through the hollow probe body. The detector's signal goes to an externally mounted preamplifier. The detector assembly, along with a preamplifier, is calibrated as a function of the surface temperature for various detector temperatures. The output voltage is a function of both the detector and object temperatures.

Boyle, Robert J.↗
NASA NTRS2000

Infrared Detector System with Controlled Thermal Conductance

A thermal infrared detector system includes a heat sink, a support member, a connection support member connecting the support member to the heat sink and including a heater unit is reviewed. An infrared detector element is mounted on the support member and a temperature signal representative of the infrared energy contacting the support member can then be derived by comparing the temperature of the support member and the heat sink. The temperature signal from a support member and a temperature signal from the connection support member can then be used to drive a heater unit mounted on the connection support member to thereby control the thermal conductance of the support member. Thus, the thermal conductance can be controlled so that it can be actively increased or decreased as desired.

Cunningham, Thomas J.↗
NASA NTRS1980

Si and GaAs photocapacitive MIS infrared detectors

Improvement of the previously reported photocapacitive MIS infrared detectors has led to the development of exceptional room-temperature devices. Unoptimized peak detectivities on the order of 10 to the 13th cm sq rt Hz/W, a value which exceeds the best obtainable from existing solid-state detectors, have now been consistently obtained in Si and GaAs devices using high-capacitance LaF3 or composite LaF3/native-oxide insulating layers. The measured spectral response of representative samples is presented and discussed in detail together with a simple theory which accounts for the observed behavior. The response of an ideal MIS photocapacitor is also contrasted with that of both a conventional photoconductor and a p-i-n photodiode, and reasons for the superior performance of the MIS detectors are given. Finally, fundamental studies on the electrical, optical, and noise characteristics of the MIS structures are analyzed and discussed in the context of infrared-detector applications.

Sher, A.↗