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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1973

Microwave properties of n-type InSb in a magnetic field between 4 and 300 K.

A two-band conduction model is used to determine the properties of shallow-type impurity semiconductors in the presence of microwave and dc magnetic fields as a function of temperature. Measurements using cavity perturbation techniques are employed to determine the properties of n-type InSb and theoretical and experimental results between 4 and 300 K are compared. The hot-electron effect was found to be insignificant between 77 and 300 K, and the scattering mechanisms are dominated by acoustic and polar modes over the same temperature range.-

Eldumiati, I. I.↗
NASA NTRS1974

Steady state growth and segregation under zero gravity: InSb

It was established that ideal diffusion controlled steady state conditions, never accomplished on earth, were achieved during the growth of Te-doped InSb crystals in Skylab. Surface tension effects were found to establish non-wetting conditions under which free surface solidification took place in confined geometry. It was further found that, under forced contact conditions, surface tension effects led to the formation of surface ridges (not previously observed on earth) which isolated the growth system from its container. In addition, it was possible for the first time to identify unambiguously: the origin of segregation discontinuities associated with facet growth, the mode of nucleation and propagation or rotational twin boundaries, and the specific effect of mechanical-shock perturbations on segregation. The results obtained prove the advantageous conditions provided by outer space. Thus, fundamental data on solidification thought to be unattainable because of gravity induced interference on earth are now within reach.

Witt, A. F.↗
NASA NTRS1976

Development of InSb charge-coupled infrared imaging devices: Linear imager

The following results were accomplished in the development of charge coupled infrared imaging devices: (1) a four-phase overlapping gate with 9 transfers (2-bits) and 1.0-mil gate lengths was successfully operated, (2) the measured transfer efficiency of 0.975 for this device is in excellent agreement with predictions for the reduced gate length device, (3) mask revisions of the channel stop metal on the 8582 mask have been carried out with the result being a large increase in the dc yield of the tested devices, (4) partial optical sensitivity to chopped blackbody radiation was observed for an 8582 9-bit imager, (5) analytical consideration of the modulation transfer function degradation caused by transfer inefficiency in the CCD registers was presented, and (6) for larger array lengths or for the insertion of isolated bits between sensors, improvements in InSb fabrication technology with corresponding decrease in the interface state density are required.

Phillips, J. D.↗
NASA NTRS1977

Further development of an indium antimonide (InSb)Charge-Coupled Infrared Imaging Device (CCIRID), 20-element linear imager

Problems encountered in the development of an indium antimonide charge coupled device for infrared imaging and real time signal processing on the focal plane are summarized. A new generation chip is described which contains, 2, 4, and 20-element imagers, a 4-element TDI array, a monolithic gated charge integrator, and test devices. A system study of a future LANDSAT sensor system configured around an InSb TDi array is considered.

Source record↗
NASA NTRS1977

Microstructure and composition of InSb-GaSb ingots directionally solidified aboard Skylab

InSb-GaSb solid solution ingots prepared by directional solidification aboard Skylab and on earth consist of twins with (111) twin planes parallel to the direction of solidification and growth directions that lie along 211, 110, or 321 crystallographic directions. Significant fractions of several ingots prepared aboard Skylab were solidified from melts that were not in contact with container walls, resulting in convection driven by surface tension gradients in the melt and corresponding radially-symmetric composition variations in the ingot. In these regions, adjacent twins exhibit marked differences in indium content, indicating a substantial dependence of composition on crystallographic orientation.

Lefever, R. A.↗
NASA NTRS1978

Polymorphism and the crystal structures of InSb at elevated temperature and pressure

The paper presents polycrystalline X-ray diffraction data for three high-pressure phases of InSb. The study employed two types of diamond-anvil pressure cells. The X-ray diffraction parameters were recorded at different fixed pressures and temperatures on flat film. The experiment utilized Zr-filtered Mo radiation. The intensities were estimated from the X-ray photographs using a semiautomated microdensitometer.

Yu, S.-C.↗
NASA NTRS1980

A fully monolithic InSb infrared CCD array

Fully monolithic infrared CCD arrays fabricated in InSb are described. The process used in fabrication includes planar junction formation by ion implantation, and an aluminum and SiO2 overlapping CCD gate structure which makes use of conventional chemical and plasma etching. IR detection and readout is demonstrated with the arrays.

Thom, R. D.↗
NASA NTRS1981

Advanced InSb monolithic Charge Coupled Infrared Imaging Devices (CCIRID)

The continued development of monolithic InSb charge coupled infrared imaging devices (CCIRIDs) is discussed. The processing sequence and structural design of 20-element linear arrays are discussed. Also, results obtained from radiometric testing of the 20-element arrays using a clamped sample-and-hold output circuit are reported. The design and layout of a next-generation CCIRID chip are discussed. The major devices on this chip are a 20 by 16 time-delay-and-integration (TDI) area array and a 100-element linear imaging array. The development of a process for incorporating an ion implanted S(+) planar channel stop into the CCIRID structure and the development of a thin film transparent photogate are also addressed. The transparent photogates will increase quantum efficiency to greater than 70% across the 2.5 to 5.4 micrometer spectral region in future front-side illuminated CCIRIDs.

Koch, T. L.↗
NASA NTRS1982

Low-background performance of a monolithic InSb CCD array

A 20 element monolithic InSb charge coupled device (CCD) detector array was measured under low background conditions to assess its potential for orbital astronomical applications. At a temperature of 64 K, previous results for charge transfer efficiency (CTE) were reproduced, and a sensitivity of about 2 x 10 to the minus 15th power joules was measured. At 27 and 6 K, extended integration times were achieved, but CTE was substantially degraded. The noise was approximately 6000 charges, which was in excess of the level where statistical fluctuations from the illumination could be detected. A telescope demonstration was performed showing that the array sensitivity and difficulty of operation were not substantially different from laboratory levels. Ways in which the device could be improved for astronomical applications were discussed.

Bregman, J. D.↗
NASA NTRS1981

XPS study of interface formation of CVD SiO2 on InSb

The interfacial chemistry of CVD SiO2 films deposited on thin native oxides grown on InSb substrates is examined using X-ray photoemission spectroscopy (XPS) and a relatively benign chemical etching technique for depth profiling. An intensity analysis of XPS spectra is used to derive the compositional structure of the interfaces obtained in the SiO2/native oxide/InSb system. Peak positions in these spectra are used to follow the change in substrate surface potential during the etch sequence, and to establish the chemical nature of the species formed during deposition and subsequent processing. Reaction of the substrate with oxygen resulted in an In-rich native oxide and 1-2 monolayers of excess elemental Sb at the native-oxide/substrate interface, incompletely oxidized silane reduced the native oxide, leaving less than 1 monolayer of elemental In at the SiO2/native oxide interface. Etch removal of this thin In-rich layer leads to a change in the substrate surface potential of 0.06 eV, corresponding to a net increase in positive charge. The results are consistent with simple thermodynamic considerations; they are also compared to previously reported studies of deposited dielectrics on III-V compound semiconductors.

Vasquez, R. P.↗
NASA NTRS1981

InSb heterodyne receivers for submillimeter astronomy

InSb hot electron bolometer mixer receivers have been developed for submillimeter line studies of the interstellar medium up to about 500 GHz. The receivers have been used aboard the NASA Kuiper Airborne Observatory which is transported to about 12,000 km by a C141 aircraft. Data have been obtained on new interstellar lines (such as the ground-state fine structure transition of atomic carbon at 492 GHz) and such molecular transitions as carbon monoxide and water. Other data were obtained at ground level using the 5-cm Hale telescope at Mount Palomar and the NASA Infrared Telescope facility at Mauna Kea, HI. The heterodyne bolometers have reached noise temperatures of less than 400 K at all frequencies to 500 GHz.

Phillips, T. G.↗
NASA NTRS1983

Cleaning chemistry of InSb(100) molecular beam epitaxy substrates

InSb has been used as a substrate for molecular beam epitaxy. For good epitaxial growth, a substrate surface which is smooth and clean on an atomic scale is required. Chemical cleaning procedures provide an oxide film to passivate the surface. This film is then desorbed by in situ heating. The material forming the film should, therefore, have a high vapor pressure at some temperature less than the substrate melting temperature. A chloride film appears to satisfy the latter requirement. The present investigation is, therefore, concerned with the formation of a chloride film rather than an oxide film. Carbon contamination has been found to cause problems in chemical cleaning procedures. The level of carbon contamination found in the case of chloride film formation, is therefore compared with the corresponding level observed in procedures using oxide films. It appears that a chloride film grown in connection with a short exposure time to a Cl2 plasma is preferable to other passivation films studied.

Vasquez, R. P.↗
NASA NTRS1983

Cleaning chemistry of GaAs(100) and InSb(100) substrates for molecular beam epitaxy

Ploog (1980) and Bachrach and Krusor (1981) have pointed out the importance of substrate preparation and surface cleaning for obtaining high quality films with the aid of molecular beam epitaxial growth techniques. In the present investigation, high resolution X-ray photoemission (XPS) is used to determine the oxide removal mechanism for GaAs(100) substrates which have undergone a standardized cleaning procedure. Other objectives of the investigation are related to a comparison of different cleaning procedures in order to minimize carbon contamination, the extension of these cleaning techniques to other III-V compound semiconductors such as InSb, and the evaluation of the sensitivity of the compositional results to electron-induced damage effects.

Vasquez, R. P.↗
NASA NTRS1984

Nonequilibrium noise of InSb hot electron bolometers

Noise spectra of a InSb hot electron bolometer at 4.2 K bath temperature are measured and compared with theory. Bolometer phonon noise and Johnson noise are included in the analysis. A nonequilibrium Johnson noise model, due to Mather, gives good agreement with experiment over the frequency range 0.2-1.1 MHz. This model incorporates an elevated electron gas temperature and electrothermal feedback from the bias supply.

Brown, E.↗
NASA NTRS1985

p-n junction formation in InSb and InAs(1-x)Sb(x) by metalorganic chemical vapor deposition

p-n junctions have been fabricated in InSb and InAs(1-x)Sb(x)(0.4 less than x less than 0.7) using metalorganic chemical vapor deposition. These junctions showed soft breakdown in addition to forward characteristics with a diode factor greater than 2. The ternary alloy has a cut-off wavelength in the 8-11-micron range, thus providing a potential material system for detectors covering the 8-12-micron range.

Chiang, P. K.↗
NASA NTRS1985

A heterodyne receiver for the submillimeter wavelength region based on cyclotron resonance in InSb at low temperatures

A heterodyne receiver has been developed for observation of interstellar atomic and molecular lines in the submillimeter wavelength region. The main detection mechanism of the device is cyclotron resonance in bulk n-InSb due to a quantized magnetic field. Measurements were carried out between 492 and 812 GHz in order to determine the sensitivity of the device for astrophysical applications. Double sideband receiver noise temperatures of 250 K at 492 GHz; 350 K at 625 GHz; and 510 K at 812 GHz were obtained. The magnetic induction for the laboratory tests was about 2.5 KG and the mixer operating temperature was about 1.6 K. It is shown that the receiver is sensitive enough to identify the narrow rotation lines of diatomic hydrides in dark-cloud regions of the interstellar medium.

Brown, E. R.↗
NASA NTRS1989

InSb DRO array characteristics

Researchers tested 58 x 62 low-doped InSb diode arrays bonded to MOSFET readouts for their performance potential in a low background space environment. Of primary concern were the quantum efficiency, dark current and read noise. The quantum efficiency (45 percent at 3.3 microns) and dark current (less than 2.4e(-)/s) were found to be adequate for the Space Infrared Telescope Facility (SIRTF) experiments, while the read noise (200 e(-) RMS) was found to be wanting. More subtle concerns, such as image quality, linearity/calibratibility and flat fielding were also investigated. In these respects the arrays appear to be well suited for the high sensitivity, photometric accuracy, and image clarity demanded by the SIRTF experiments.

Forrest, W. J.↗
NASA NTRS1991

InSb linear multiplexed FPAs for the CRAF/Cassini visible and infrared mapping spectrometer

This paper provides a review of a custom multiplexer circuit designed for use with a 256 element InSb linear array in the CRAF/Cassini VIMS instruments. The requirements, operation noise model and test results from a prototype 1 x 64 array are discussed. The infrared focal plane array (FPA) preliminary design and the impact of the new multiplexer on the instruments' predicted performance will be discussed. Emphasis will be placed on the multiplexer that was designed for the CRAF/Cassini missions. The FPA assembly combines electronic and optical components into a single hermetically sealed hybrid package. The detector configuration is that of a linear dual-multiplexed indium antimonide array with 256 elements, each 103 x 200 on 123-micron centers.

Niblack, Curtiss↗