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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Monolithic InSb imaging arrays with charge-coupled device /CCD/ readout

The paper demonstrates the detection of infrared radiation and signal readout on a monolithic InSb charge coupled infrared imaging device. The device is a 20-element linear imager with MOS detectors coupled to a four-phase, surface-channel, charge transfer structure. The charge transfer device is p-channel and has planar ion implanted diode structures for zero input and charge readout. Sensitivity measurements on the MOS infrared detectors were determined for the 20-element array. Data are presented on the operational characteristics of the 20-element linear imager under various conditions of electrical and optical inputs in both multiplexed and a time delay and integration (TDI) mode. Plans are discussed for a monolithic InSb 100-element linear imager and a 20 x 16 TDI linear imager.

Miller, W. E.↗
NASA NTRS1980

Projected noise in submillimeter-wave mixers with InSb Schottky diodes

The reduction of the equivalent noise temperature in liquid-nitrogen-cooled submillimeter-wave mixers by the use of Schottky barriers on InSb instead of GaAs is evaluated by an analytical model that assumes limited local oscillator power and matched impedances. The calculations, executed at 1.0 and 1.8 THz, take plasma resonance and skin effect into account. For single and multiple contacts on homogeneous semiconductor materials of optimum doping, the noise of InSb diodes is smaller than that of GaAs diodes by a factor of 3 to 14. A simplified model is used to predict the performance of epitaxial structures as well as alternative materials.

Lieneweg, U.↗
NASA NTRS1982

Integrating 128 element InSb array - Recent results

There has been a continuing evolution toward larger arrays of infrared detectors, and the technology base derived from the Galileo Near Infrared Mapping Spectrometer (NIMS) has been expanded to linear arrays including from 128 to 512 elements. This advance is based on the commercial availability of high-quality InSb photodiodes and 128/256 element FET switch MUX's (multiplexing elements). The present investigation is concerned with an experimental 128-element linear imager using InSb detectors and silicon MUX for readout. Attention is given to detector array electrical characteristics, the detector readout architecture, noise, and special effects.

Bailey, G.↗
NASA NTRS1985

Submillimeter wave absorption of n-type InSb at low temperatures

The absorption coefficient of two high-purity n-InSb samples is measured in the 10-40 per cm range using Fourier transform spectroscopy. The absorption coefficient spectrum is presented for both samples at 4.2 K. It is also shown for the lower resistance sample cooled to 2.2 K and heated by dc bias to elevated electron gas temperatures of 7.5 and 17.9 K. ac Drude theory gives rather poor agreement with experiment at 2.2 and 4.2 K but does much better when the sample electron gas is heated. In contrast, a simple quantum mechanical theory of absorption based on inverse Bremsstrahlung yields promising agreement at the lower temperatures although its applicability is questionable. The non-Drudian absorption is shown to have a favorable effect on the performance of InSb hot-electron bolometers.

Brown, E. R.↗
NASA NTRS1985

Absolute response and noise equivalent power of cyclotron resonance-assisted InSb detectors at submillimeter wavelengths

Spectra are presented of the responsivity and noise equivalent power (NEP) of liquid-helium-cooled InSb detectors as a function of magnetic field in the range 20-110 per cm. The measurements are all made using a Fourier transform spectrometer with thermal sources. The results show a discernable peak in the detector response at the conduction electron cyclotron resonance (CCR) frequency for magnetic fields as low as 3 kG. The magnitude of responsivity at the resonance peaks is roughly constant with magnetic field and is comparable to the low-frequency hot-electron bolometer response. The NEP at the peaks is found to be comparable to the best long wavelength results previously reported. For example, NEP = 4.5 x 10 to the 13th W/(square root of Hz) at 4.2 K, 6 kG, and 40 per cm was measured. The InSb CCR will provide a much improved detector for laboratory spectroscopy, as compared with hot electron bolometers, in the 20-100 per cm range.

Brown, E. R.↗
NASA NTRS1986

InSb arrays: Astronomy with a 32x32 CCD/development of a 58x62 DRO

Experience gained in operating infrared detector arrays for high sensitivity astronomical applications at the University of Rochester are summarized. Progress made in operating the 32 x 32 InSb array with bump-bonded Silicon CCD readout is described. Astronomical work done with the 32 x 32 camera is also described. Plans for the future, including improvements for the 32 x 32 camera system as well as implementing a new generation of 58 x 62 InSb array using switched-MOSFET direct readout multiplexing system in the place of the older CCD technology is discussed.

Forrest, W. J.↗
NASA NTRS1989

Surface morphologies and electrical properties of molecular beam epitaxial InSb and InAs(x)Sb(1-x) grown on GaAs and InP substrates

Surface morphologies and electrical properties of molecular beam epitaxial InSb and InAs(x)Sb(1-x) grown on GaAs and InP substrates are discussed. The crystals are all n-type at 300 K and lower temperatures. The surface morphology and electrical characteristics are strongly dependent on Sb(4)/In flux ratio and substrate temperature. The highest mobilities in InSb on InP are 70,000 at 300 K and 110,000 cm(2)/V.s (n=3x10(15) cm(-3)) at 77 K. The mobilities in the alloys also increase monotonically with lowering of temperature. Good quality InAs(x)Sb(1-x) was grown directly on InP substrates by molecular beam epitaxy.

Oh, J. E.↗
NASA NTRS2009

Dewetting and Segregation of Zn-Doped InSb in Microgravity Experiments

In directional solidification, dewetting is characterized by the lack of contact between the crystal and the crucible walls, due to the existence of a liquid meniscus at the level of the solid-liquid interface. This creates a gap of a few tens of micrometers between the crystal and the crucible. One of the immediate consequences of this phenomenon is the dramatic improvement of the quality of the crystal. This improvement is partly due to the modification of the solid-liquid interface curvature and partly to the absence of sticking and spurious nucleation at the crystal-crucible interface. Dewetting has been, commonly observed during the growth of semiconductors in crucibles under microgravity conditions where it appears to be very stable: the gap between the crystal and the crucible remains constant along several centimetres of growth. The physical models of the phenomenon are well established and they predict that dewetting should not occur in microgravity, if sufficient static pressure is imposed on the melt, pushing it towards the crucible. We present the results of InSb(Zn) solidification experiments conducted at the International Space Station (ISS) where, in spite of a spring exerting a pressure on the liquid, partial dewetting did occur. This surprising result is discussed in terms of force exerted .by the spring on the liquid and of possibility that the spring did not work properly. Furthermore, it appears that the segregation of the Zn was not affected by the occurrence of the dewetting. The data suggest that there was no significant interference of convection with segregation of Zn in InSb.

Ostrogorsky, A. G.↗
DOE OSTI2020

Materials Data on InSb by Materials Project

InSb is Tetraauricupride structured and crystallizes in the cubic Pm-3m space group. The structure is three-dimensional. In3+ is bonded in a body-centered cubic geometry to eight equivalent Sb3- atoms. All In–Sb bond lengths are 3.30 Å. Sb3- is bonded in a body-centered cubic geometry to eight equivalent In3+ atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on InSb by Materials Project

InSb is Halite, Rock Salt structured and crystallizes in the cubic Fm-3m space group. The structure is three-dimensional. In3+ is bonded to six equivalent Sb3- atoms to form a mixture of corner and edge-sharing InSb6 octahedra. The corner-sharing octahedral tilt angles are 0°. All In–Sb bond lengths are 3.07 Å. Sb3- is bonded to six equivalent In3+ atoms to form a mixture of corner and edge-sharing SbIn6 octahedra. The corner-sharing octahedral tilt angles are 0°.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on InSb by Materials Project

InSb is High Pressure Cadmuum Telluride structured and crystallizes in the orthorhombic Pmm2 space group. The structure is three-dimensional. In3+ is bonded in a bent 150 degrees geometry to two equivalent Sb3- atoms. Both In–Sb bond lengths are 3.18 Å. Sb3- is bonded to two equivalent In3+ and four equivalent Sb3- atoms to form a mixture of edge and corner-sharing SbIn2Sb4 octahedra. The corner-sharing octahedra tilt angles range from 0–29°. There are two shorter (3.04 Å) and two longer (3.14 Å) Sb–Sb bond lengths.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on InSb by Materials Project

InSb is Zincblende, Sphalerite structured and crystallizes in the cubic F-43m space group. The structure is three-dimensional. In3+ is bonded to four equivalent Sb3- atoms to form corner-sharing InSb4 tetrahedra. All In–Sb bond lengths are 2.87 Å. Sb3- is bonded to four equivalent In3+ atoms to form corner-sharing SbIn4 tetrahedra.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on InSb by Materials Project

InSb crystallizes in the orthorhombic Cmcm space group. The structure is three-dimensional. there are two inequivalent In3+ sites. In the first In3+ site, In3+ is bonded to six Sb3- atoms to form InSb6 octahedra that share corners with two equivalent SbIn5Sb octahedra, corners with four equivalent InSb6 octahedra, edges with four equivalent InSb6 octahedra, and edges with eight equivalent InSb5 trigonal bipyramids. The corner-sharing octahedra tilt angles range from 0–39°. There are a spread of In–Sb bond distances ranging from 3.04–3.30 Å. In the second In3+ site, In3+ is bonded to five Sb3- atoms to form distorted InSb5 trigonal bipyramids that share corners with four equivalent SbIn5Sb octahedra, corners with five equivalent InSb5 trigonal bipyramids, edges with four equivalent InSb6 octahedra, and edges with four equivalent InSb5 trigonal bipyramids. The corner-sharing octahedra tilt angles range from 65–106°. There are a spread of In–Sb bond distances ranging from 3.05–3.22 Å. There are two inequivalent Sb3- sites. In the first Sb3- site, Sb3- is bonded to six In3+ atoms to form a mixture of edge and corner-sharing SbIn6 octahedra. The corner-sharing octahedra tilt angles range from 0–1°. In the second Sb3- site, Sb3- is bonded to five In3+ and one Sb3- atom to form distorted SbIn5Sb octahedra that share a cornercorner with one InSb6 octahedra, corners with five equivalent SbIn5Sb octahedra, corners with four equivalent InSb5 trigonal bipyramids, and edges with eight SbIn6 octahedra. The corner-sharing octahedra tilt angles range from 9–39°. The Sb–Sb bond length is 2.93 Å.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on InSb by Materials Project

InSb is Halite, Rock Salt-like structured and crystallizes in the orthorhombic Cmcm space group. The structure is three-dimensional. In3+ is bonded to six equivalent Sb3- atoms to form a mixture of edge and corner-sharing InSb6 octahedra. The corner-sharing octahedra tilt angles range from 0–13°. There are a spread of In–Sb bond distances ranging from 3.06–3.09 Å. Sb3- is bonded to six equivalent In3+ atoms to form a mixture of edge and corner-sharing SbIn6 octahedra. The corner-sharing octahedra tilt angles range from 0–13°.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on InSb by Materials Project

InSb is beta-prime cadmium gold structured and crystallizes in the orthorhombic Pmmn space group. The structure is three-dimensional. In3+ is bonded to four equivalent Sb3- atoms to form a mixture of distorted corner and edge-sharing InSb4 trigonal pyramids. There are two shorter (3.09 Å) and two longer (3.10 Å) In–Sb bond lengths. Sb3- is bonded in a 6-coordinate geometry to four equivalent In3+ and two equivalent Sb3- atoms. Both Sb–Sb bond lengths are 3.22 Å.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on InSb by Materials Project

InSb crystallizes in the monoclinic Cm space group. The structure is three-dimensional. In3+ is bonded to six equivalent Sb3- atoms to form distorted InSb6 octahedra that share corners with twelve equivalent SbIn6Sb2 hexagonal bipyramids, corners with six equivalent InSb6 octahedra, and edges with twelve equivalent InSb6 octahedra. The corner-sharing octahedra tilt angles range from 5–6°. There are a spread of In–Sb bond distances ranging from 3.08–3.42 Å. Sb3- is bonded to six equivalent In3+ and two equivalent Sb3- atoms to form distorted SbIn6Sb2 hexagonal bipyramids that share corners with eight equivalent SbIn6Sb2 hexagonal bipyramids, corners with twelve equivalent InSb6 octahedra, and edges with twelve equivalent SbIn6Sb2 hexagonal bipyramids. The corner-sharing octahedra tilt angles range from 59–121°. Both Sb–Sb bond lengths are 3.16 Å.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on InSb by Materials Project

InSb is Wurtzite structured and crystallizes in the hexagonal P6_3mc space group. The structure is three-dimensional. In3+ is bonded to four equivalent Sb3- atoms to form corner-sharing InSb4 tetrahedra. There are three shorter (2.87 Å) and one longer (2.89 Å) In–Sb bond lengths. Sb3- is bonded to four equivalent In3+ atoms to form corner-sharing SbIn4 tetrahedra.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Sierpinski Structure and Electronic Topology in Bi Thin Films on InSb(111)B Surfaces

Deposition of Bi on InSb(111)B reveals a striking Sierpinski-triangle (ST)-like structure in Bi thin films. Such a fractal geometric topology is further shown to turn off the intrinsic electronic topology in a thin film. Relaxation of a huge misfit strain of about 30 to 40% between Bi adlayer and substrate is revealed to drive the ST-like island formation. A Frenkel-Kontrova model is developed to illustrate the enhanced strain relief in the ST islands offsetting the additional step energy cost. Besides a sufficiently large tensile strain, forming ST-like structures also requires larger adlayer-substrate and intra-adlayer elastic stiffnesses, and weaker intra-adlayer interatomic interactions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗