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DOE OSTI2022

Exploration of Defect Dynamics and Color Center Qubit Synthesis with Pulsed Ion Beams

Short-pulse ion beams have been developed in recent years and now enable applications in materials science. A tunable flux of selected ions delivered in pulses of a few nanoseconds can affect the balance of defect formation and dynamic annealing in materials. We report results from color center formation in silicon with pulses of 900 keV protons. G-centers in silicon are near-infrared photon emitters with emerging applications as single-photon sources and for spin-photon qubit integration. G-centers consist of a pair of substitutional carbon atoms and one silicon interstitial atom and are often formed by carbon ion implantation and thermal annealing. Here, we report on G-center formation with proton pulses in silicon samples that already contained carbon, without carbon ion implantation or thermal annealing. The number of G-centers formed per proton increased when we increased the pulse intensity from 6.9 × 10 9 to 7.9 × 10 10 protons/cm 2 /pulse, demonstrating a flux effect on G-center formation efficiency. We observe a G-center ensemble linewidth of 0.1 nm (full width half maximum), narrower than previously reported. Pulsed ion beams can extend the parameter range available for fundamental studies of radiation-induced defects and the formation of color centers for spin-photon qubit applications.

43 PARTICLE ACCELERATORS↗

DOE OSTI2025

Commissioning of Extended Electron Beam Ion Source at Brookhaven National Laboratory

Here, the Extended Electron Beam Ion Source (EEBIS) has been installed and commissioned at Brookhaven National Laboratory (BNL) hadron accelerator complex in the spring of 2023. EEBIS has replaced its predecessor, RhicEBIS, which provided ions for BNL hadron facilities for over a decade since 2009. The motivations for the source upgrade are to provide higher intensities of the Au 32+ ion beam for the Relativistic Heavy Ion Collider (RHIC) and to provide of an intense source of polarized 3 He 2+ ions for the future Electron Ion Collider (EIC) at BNL. EEBIS is and will continue to be the primary source for a variety of different ion species for the NASA Space Radiation Laboratory (NSRL) at BNL. EEBIS utilizes two identical, two-meter-long unshielded 5T warm bore superconducting solenoids, and it is operated with electron beam current up to 10 A, providing a high-capacity ion traps to fulfill the requirement for high intensity ion beams. The upstream solenoid contains a “short ion trap” with a length of 95 cm, while the “long ion trap” with a length of 178 cm is located inside the downstream solenoid bore. The main features of EEBIS are: * A Gas injection and ionization cell equipped with a Lorenz pulse valve * High-capacity ZAO non-evaporable getter (NEG) custom linear pumping units * In situ apparatus for pumping speed measurements to monitor NEG activation and saturation * “External drift tube” construction with differential pumping stages to provide space for Lorentz pulse valve and 3 He high-field polarization cell * A Ba oxide electron gun cathode. The design of EEBIS as well as the results of its commissioning and first-year operation are presented and discussed.

43 PARTICLE ACCELERATORS↗

DOE OSTI2020

Neutralization of ion beam by electron injection: Accumulation of cold electrons

Ion beam charge neutralization by electron injection is a complex kinetic process. Recent experiments show that the resulting self-potential of the ion beam after neutralization by plasma is much lower than the temperature of plasma electrons [Stepanov et al., Phys. Plasmas 23, 043113 (2016)], indicating that kinetic effects are important and may affect the neutralization of the ion beam. We performed a numerical study of the charge neutralization process of an ion beam making use of a two-dimensional electrostatic particle-in-cell code. The results show that the process of charge neutralization by electron injection is composed of two stages. During the first stage, the self-potential of the beam is higher than the temperature of injected electrons (T e /e) and all injected electrons are captured by the ion beam. During the second stage, hot electrons escape from the ion beam and the beam self-potential (φ) decreases because cold electrons slowly accumulate resulting in the beam self-potential φ to become much lower than Te/e in agreement with previous experimental observations at Princeton Advanced Teststand. We also determined that the resulting φ scales as φ~√T e , in agreement with previous experimental observations from Gabovich's group. In addition, the results show that the transverse position of the electron source has a great impact on ion beam neutralization. A slight shift of the electron source as relevant to the ion thrusters leads to a large increase in the beam self-potential because of an increase in potential energy of injected electrons.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2020

Sample spinning to mitigate polarization artifact and interstitial-vacancy imbalance in ion-beam irradiation

Accelerator-based ion-beam irradiation has been widely used to mimic the effects of neutron radiation damage in nuclear reactors. However, ion radiation is most often monodisperse in the incoming ions’ momentum direction, leading to excessive polarization in defect distribution, while the scattering under neutron irradiation is often more isotropic and has less radiation-induced polarization. Mitigation of the excess-polarization as well as the damage non-uniformity artifact might be crucial for making the simulation of neutron radiation by ion-beam radiation more realistic. In this work, a general radiation polarization theory in treating radiation as external polar stimuli is established to understand the natural material responses in different contexts, and the possibility to correct the defect polarization artifact in ion-beam irradiation. Inspired by Magic Angle Spinning in Nuclear Magnetic Resonance, we present a precise sample spinning strategy to reduce the point-defect imbalance effect in ion-beam irradiation. It can be seen that with optimized surface inclination angle and the axis of sample rotation, the vacancy-interstitial population imbalance, as well as the damage profile non-uniformity in a designated region in the target are both reduced. It is estimated that sample spinning frequency on the order of kHz should be sufficient to scramble the ion momentum monodispersity for commonly taken ion fluxes and dose rates, which is experimentally feasible.

36 MATERIALS SCIENCE↗

DOE OSTI2026

Intrabeam scattering studies with large-emittance-ratio ion beams in the Relativistic Heavy Ion Collider, and implications for the Electron-Ion Collider

The Electron-Ion Collider (EIC), to be constructed at Brookhaven National Laboratory, will collide polarized, high-energy electron beams with hadron beams, achieving peak luminosities of up to 1.0 x 10 34 cm -2 s -1 . To reach such high luminosity, the EIC will employ flat-beam collisions at the interaction point. The design transverse emittance ratio will be about 10:1 in the Hadron Storage Ring (HSR). Thanks to stochastic cooling and precise decoupling, we successfully generated and accelerated gold ion beams with a large emittance ratio of 11:1 in the Relativistic Heavy Ion Collider (RHIC). In this article, we present results of intrabeam scattering (IBS) measurements and modeling for large-emittance gold ion beams, both without and with controlled betatron coupling. To model the IBS growth, we use the formulas developed by Lebedev and Nagaitsev.

43 PARTICLE ACCELERATORS↗

DOE OSTI2026

Focused ion beam milling of polycrystalline diamond

Focused ion beam (FIB) technology has a large potential for precise milling of ultrahard materials such as diamond. However, studies of the sputtering of diamond with ion species and energies relevant to the FIB technology are scarce. Here, we report a systematic study of the sputtering of polycrystalline diamond surfaces with ion beams in a wide range of ion energies (2 - 30 keV), incident beam angles (0 - 80°), and ion masses (N, O, Ar, and Xe). Results show that the sputter yield is relatively insensitive to ion energy but strongly depends on the ion species and incident beam angles. Bombardment with O ions results in sputter yields that are significantly larger than ballistic predictions due to chemical etching effects. Characteristic surface ripples develop for oblique beam incidence angle irradiation. The critical beam tilt angle for the onset of ripple formation and the wavelength of the ripples depend on ion species and energies. Ripples appear to suppress ion reflection at high beam tilt angles and, hence, a peak in the sputter yield angular dependence. In conclusion, these results have direct implications for the development of process parameter maps for high-precision ion-beam milling of diamond.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Planarization, densification, and exfoliation of porous materials by high-energy ion beams

A method and system for providing at least one of planarization, densification, and exfoliation of a porous material using ion beams. The method may use an ion beam generator to generate an ion beam, the ion beam having energy above 0.1 MeV. The ion beam generator may irradiate the surface of a porous material with the ion beam to produce at least one of planarization, densification, and exfoliation of the porous material.

Kucheyev, Sergei O.↗

DOE OSTI2022

Characterization of beam ion loss in high poloidal beta regime on EAST

A critical issue for achieving the integrated operation of steady-state long-pulse high-confinement (H-mode) plasmas on experimental advanced superconducting tokamak (EAST) is to improve beam ion population confinement during neutral beam injection (NBI). To study the characterization of beam ion loss and improve beam ion confinement, the steady-state long pulse scenario discharges were conducted on EAST (β p $\geqslant$ 2.0, β N $\geqslant$ 1.7, q 95 $\geqslant$ 6.7 and H 98y2 $\geqslant$ 1.1) with NBI heating. Based on neutron yield, the beam voltage and line-averaged electron density were adjusted from 50 kV to 60 kV and 4.4 × 10 19 m –3 to 5.0 × 10 19 m –3 , respectively. The results show that the dominant mechanisms of beam ion loss are shine-through loss, prompt loss, and stochastic ripple loss. The shine-through loss fraction is determined by initial velocity, flight time and entire beam path. The change in prompt loss fraction is caused by the change in the deposition of beam ions. The change in stochastic ripple loss fraction is caused by the change in the initial fraction of trapped-confined ions. Detailed physics shows that the prompt loss fraction during counter-Ip injections (~45%) is far larger than during co-Ip injections (~5%) due to the finite orbit width. The lost ions are mainly deposited on the lower divertor or below the midplane since the direction of magnetic drift is vertical down. The orbit types of prompt loss during counter-Ip injections are mainly trapped-lost and ctr-passing lost. To minimize the prompt loss fraction during counter-Ip injections, a reversed Ip configuration (rev-Ip) discharge #94758 was conducted. The result suggests that the beam ion wall load fraction during counter-Ip tangential injection (~3%) is far lower than that in normal Ip configuration (nor-Ip) discharge #94820. It is also found that the confinement of beam ion population in the counter-Ip injection #94758 was greatly improved when compared to #94820. Finally, this study can provide unique support for the improvement of beam ion population confinement and for the performance evaluation of the NBI system on EAST and future tokamaks.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2023

Ion beam profiling system and related methods

An ion beam profiling system include a beam profiling element, an ion sensitive element electrically isolated from the beam profiling element, an ion source configured to emit an ion beam at the beam profiling element and the ion sensitive element, and a current measuring device coupled to the ion sensitive element. The beam profiling element includes a plate of material having two parallel major surfaces, a first slit aperture extending through the plate of material and having a first longitudinal length extending in a direction parallel to the two parallel major surfaces, and a second slit aperture extending through the plate of material and having a second longitudinal length extending in a direction parallel to the two parallel major surfaces, wherein the first longitudinal length of the first slit aperture is perpendicular to the second longitudinal length of the second slit aperture.

Taylor, Chase N.↗

DOE OSTI2025

Plasma Focused Ion Beam Milling of High-Aspect-Ratio Holes in Diamond

Plasma focused ion beam (PFIB) technology has a great potential for applications requiring rapid micro-machining of high-aspect-ratio features. Here, we use 30-keV Ar, Xe, and O 2 ion beams to study PFIB milling of high-aspect-ratio circular holes in polycrystalline diamond. Our results show that Xe and O 2 ion beams have the highest milling efficiency for low-aspect-ratio and high-aspect-ratio hole milling, respectively. Each ion beam species produces holes with its characteristic shape and wall surface morphology. In conclusion, based on these results, we demonstrate a “hybrid” hole milled in a two-step process with Xe and O 2 ion beams with the geometry and wall morphology attractive for the attachment of a fuel fill tube to the inertial confinement fusion capsule.

ICF targets↗

DOE OSTI2023

Ion-beam radiation-induced Eshelby transformations: The mean and variance in hydrostatic and shear residual stresses

Ion beam plays a pivotal role in ion implantations and the fabrication of nanostructures. However, there lacks a quantitative model to describe the residual stresses associated with the ion-beam radiation. Radiation-induced residual stress/transformation strain have been mostly recognized in the hydrostatic sub strain space. Here, in this study, we use molecular dynamics (MD) simulations to show that the response of a material to irradiation is generally anisotropic that depends on the ion-beam direction, and should be described using tensorial quantities. We demonstrate that accelerator-based ion beam irradiation, combined with the intrinsic lattice anisotropy and externally induced anisotropy (such as anisotropic mechanical loadings), causes radiation-actuated shear transformation strains in addition to hydrostatic expansion. We map out these complex correlations for several materials. Radiation-induced defects are shown to be responsible for residual shear stresses in the manner of Eshelby inclusion transformation. We propose such tensorial response model should be considered for accurate nanoscale fabrication using ion-beam irradiation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2022

Single-beam ion source enhanced growth of transparent conductive thin films

A single-beam ion source was developed and used in combination with magnetron sputtering to modulate the film microstructure. The ion source emits a single beam of ions that interact with the deposited film and simultaneously enhances the magnetron discharge. The magnetron voltage can be adjusted over a wide range, from approximately 240 to 130 V, as the voltage of the ion source varies from 0 to 150 V, while the magnetron current increases accordingly. The low-voltage high-current magnetron discharge enables a 'soft sputtering mode', which is beneficial for thin-film growth. Indium tin oxide (ITO) thin films were deposited at room temperature using a combined single-beam ion source and magnetron sputtering. Furthermore, the ion beam resulted in the formation of polycrystalline ITO thin films with significantly reduced resistivity and surface roughness. Single-beam ion-source-enhanced magnetron sputtering has many potential applications in which low-temperature growth of thin films is required, such as coatings for organic solar cells.

36 MATERIALS SCIENCE↗

DOE OSTI2023

TA-03-0016 Ion Beam Facility D&D: Sphere of Influence [Slides]

TA-03-0016 Ion Beam Facility: This structure is 70 years old and has been vacant since 1994 and was excessed in 1999. The Ion Beam Facility (IBF) was built in 1953 to support essential post-World War II scientific research and houses LANL's original vertical and tandem Van de Graaff accelerators. The vertical Van de Graaff accelerator was built under the direction of Joseph McKibben from 1948 to 1952 and was used for applied nuclear physics experiments. The Ion Beam facility is considered by NNSA as one of its highest risk process contaminated facilities within the complex. Ion Beam is a radiological facility adjacent to the LANL Occupational Medicine Facility on the south side of TA-3, the most populated technical area at LANL. It poses an undesirable fire risk, especially given its close location to a rugged wooded canyon and difficulties in fighting a wildland fire in such a location. Demolition of this structure will provide a constructable site for critical mission radiological laboratory spaces.

99 GENERAL AND MISCELLANEOUS↗

DOE OSTI2021

Branched High Aspect Ratio Nanostructures Fabricated by Focused Helium Ion Beam Induced Deposition of an Insulator

Helium ion beam induced deposition using the gaseous precursor pentamethylcyclopentasiloxane is employed to fabricate high aspect ratio insulator nanostructures (nanopillars and nanocylinders) that exhibit charge induced branching. The branched nanostructures are analyzed by transmission electron microscopy. It is found that the side branches form above a certain threshold height and that by increasing the flow rate of the precursor, the vertical growth rate and branching phenomenon can be significantly enhanced, with fractalesque branching patterns observed. The direct-write ion beam nanofabrication technique described herein offers a fast single-step method for the growth of high aspect ratio branched nanostructures with site-selective placement on the nanometer scale.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Lithium source for focused ion beam implantation and analysis

In this work, we present a new Li source for focused ion beam applications. Based on an AuSi eutectic alloy, Li is added as an impurity to minimize effects from degradation when exposed to air. We show the source is stable over the course of an hour and spot sizes ≲10 nm can be achieved. The Li beam can achieve hundreds of nanometer ranges in semiconductors with minimal damage being generated along the path length. The source performance is evaluated through a high-resolution ion beam induced charge collection experiment on an Si-based detector. Further application of the source for ion beam analysis is numerically explored; the example investigated is based on probing a semiconductor heterostructure through a Rutherford backscattering experiment, where the Li beam can reveal information that is inaccessible with either low energy or high energy He projectiles used as probes.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Experimental observation of a field-aligned ion beam produced by magnetic reconnection of two flux ropes

An ion beam field-aligned to the background guide field ($B$ 0 = $330$ G) was observed in a reconnection experiment on the Large Plasma Device and, to the authors' knowledge, is the first experimental observation of its kind. Two kink-unstable flux ropes ( L = 11 m, d = 7.6 cm) were made to collide, which allows magnetic reconnection to occur. Sub-Alfvénic ion beams with energies of up to 15 eV were then observed from measurements of the local ion energy distribution function. The beam ions do not appear to be heated. Further, they were correlated with the collision of the ropes and appear to be energized by magnetic reconnection. The results and interpretation of the measurements are supported by three-dimensional gyrokinetic particle simulations of the merging flux ropes and electric field measurements from previous experiments [W. Gekelman et al. , Astrophys. J. 853, 33 (2018)]. The mechanism behind the acceleration appears to be non-local.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2023

Validating the simulation of beam-ion charge exchange in MAST Upgrade

Abstract Simulation of the impact of charge-exchange (CX) reactions on beam ions in the Mega Amp Spherical Tokamak (MAST) Upgrade was compared to measurements carried out with a fission chamber (neutron fluxes) and a fast ion deuterium-alpha (FIDA) diagnostic. A simple model was developed to reconstruct the outer-midplane neutral density based on measurements of deuterium-alpha emission from edge neutrals, and on Thomson scattering measurements of electron density and temperature. The main computational tools used were the ASCOT orbit-following code and the FIDASIM code for producing synthetic FIDA signals. The neutral density reconstruction agrees qualitatively with SOLPS-ITER modelling and yields a synthetic passive FIDA signal that is consistent with measurement. When CX losses of beam ions are accounted for, predicted neutron emission rates are quantitatively more consistent with measurement. It was necessary to account for CX losses of beam ions in simulations to reproduce the measured passive FIDA signal quantitatively and qualitatively. The results suggest that the neutral density reconstruction is a good approximation, that CX with edge neutrals causes significant beam-ion losses in MAST Upgrade, typically 20% of beam power, and that the ASCOT fast-ion CX model can be used to accurately predict the redistribution and loss of beam ions due to CX.

Physics↗

DOE OSTI2023

Exposure to multiple ion beams, broadly representative of galactic cosmic rays, causes perivascular cardiac fibrosis in mature male rats

Long-duration space exploratory missions to the Earth’s moon and the planet Mars are actively being planned. Such missions will require humans to live for prolonged periods beyond low earth orbit where astronauts will be continuously exposed to high energy galactic cosmic rays (GCRs). A major unknown is the potential impact of GCRs on the risks of developing degenerative cardiovascular disease, which is a concern to NASA. A ground-based rat model has been used to provide a detailed characterization of the risk of long-term cardiovascular disease from components of GCRs at radiation doses relevant to future human missions beyond low earth orbit. Six month old male WAG/RijCmcr rats were irradiated at a ground-based charged particle accelerator facility with high energy ion beams broadly representative of GCRs: protons, silicon and iron. Irradiation was given either as a single ion beam or as a combination of three ion beams. For the doses used, the single ion beam studies did not show any significant changes in the known cardiac risk factors and no evidence of cardiovascular disease could be demonstrated. In the three ion beam study, the total cholesterol levels in the circulation increased modestly over the 270 day follow up period, and inflammatory cytokines were also increased, transiently, 30 days after irradiation. Perivascular cardiac collagen content, systolic blood pressure and the number of macrophages found in the kidney and in the heart were each increased 270 days after irradiation with 1.5 Gy of the three ion beam grouping. These findings provide evidence for a cardiac vascular pathology and indicate a possible threshold dose for perivascular cardiac fibrosis and increased systemic systolic blood pressure for complex radiation fields during the 9 month follow up period. The development of perivascular cardiac fibrosis and increased systemic systolic blood pressure occurred at a physical dose of the three ion beam grouping (1.5 Gy) that was much lower than that required to show similar outcomes in earlier studies with the same rat strain exposed to photons. Further studies with longer follow up periods may help determine whether humans exposed to lower, mission-relevant doses of GCRs will develop radiation-induced heart disease.

60 APPLIED LIFE SCIENCES↗