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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Wallpaper fermions and the nonsymmorphic Dirac insulator

Materials whose gapless surface states are protected by crystal symmetries include mirror topological crystalline insulators and nonsymmorphic hourglass insulators. There exists only a very limited set of possible surface crystal symmetries, captured by the 17 “wallpaper groups.” Here we show that a consideration of symmetry-allowed band degeneracies in the wallpaper groups can be used to understand previously described topological crystalline insulators and to predict phenomenologically distinct examples. In particular, the two wallpaper groups with multiple glide lines, pgg and p 4 g , allow for a topological insulating phase whose surface spectrum consists of only a single, fourfold-degenerate, true Dirac fermion, representing an exception to a symmetry-enhanced fermion-doubling theorem. We theoretically predict the presence of this phase in Sr 2 Pb 3 in space group 127 ( P 4 /mbm) .

Science & Technology - Other Topics↗
DOE OSTI2018

Electrically tunable low-density superconductivity in a monolayer topological insulator

Turning on superconductivity in a topologically nontrivial insulator may provide a route to search for non-Abelian topological states. However, existing demonstrations of superconductor-insulator switches have involved only topologically trivial systems. Here we report reversible, in situ electrostatic on-off switching of superconductivity in the recently established quantum spin Hall insulator monolayer tungsten ditelluride (WTe 2 ). Fabricated into a van der Waals field-effect transistor, the monolayer’s ground state can be continuously gate-tuned from the topological insulating to the superconducting state, with critical temperatures T c up to ~1 kelvin. Our results establish monolayer WTe 2 as a material platform for engineering nanodevices that combine superconducting and topological phases of matter.

solar (photovoltaic), solid state lighting, photos↗
DOE OSTI2020

Highly Insulated Wall Systems with Exterior Insulation of Polyisocyanurate under Different Facer Materials: Material Characterization and Long-Term Hygrothermal Performance Assessment

The application of exterior insulation in both new construction and retrofits is a common practice to enhance the energy efficiency of buildings. In addition to increased thermal performance, the rigid insulation can serve to keep the sheathing board warm and serve as a water-resistive barrier to keep moisture-related problems due to condensation and wind-driven rain. Polyisocyanurate (PIR) rigid boards have a higher thermal resistance in comparison to other commonly used exterior insulation boards. However, because of its perceived lower permeance, its use as exterior insulation is not very common. In this study, the hygrothermal property of PIR boards with different facer types and thicknesses is characterized. The material data obtained through experimental test and extrapolation is used in a long term hygrothermal performance assessment of a wood frame wall with PIR boards as exterior insulation. Results show that PIR with no facer has the smallest accumulated moisture on the sheathing board in comparison to other insulation boards. Walls with a bigger thickness of exterior insulation perform better when no vapor barrier is used. The PIR exterior insulation supports the moisture control strategy well in colder climates in perfect wall scenarios, where there is no air leakage and moisture intrusion. In cases where there is trapped moisture, the sheathing board has a higher moisture content with PIR boards with both aluminum or fiberglass type facers. An innovative facer material development for PIR boards can help efforts targeting improved energy-efficient and durable wall systems.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Medium Voltage Converter Inductor Insulation Design Considering Grid Insulation Requirements

Medium voltage SiC devices facilitate direct (without 50/60 Hz transformer) connection of the power electronics converter to the medium voltage grid using simple topology. Compared to the insulation design of medium voltage inductors that have been widely used in the power system, the insulation design of directly connected medium voltage converter filter inductors has more challenges. Although some works has been done discussing that, the grid insulation requirements on converter filter inductors are rarely discussed. This paper introduces the insulation design of a grid-side filter inductor for a 13.8 kV power conditioning system converter. The grid insulation requirements, including the short-duration power frequency overvoltage and the lightning impulse voltage, are considered in the design. To meet the requirements, the layer-to-layer insulation, winding-to-core/ground insulation, the air gap discharge between the winding and the core, as well as the local electrical field have been taken into consideration. Experimental tests are provided to validate the design.

Li, Haiguo↗
DOE OSTI2021

Crossover from 2D Ferromagnetic Insulator to Wide Band Gap Quantum Anomalous Hall Insulator in Ultrathin MnBi 2 Te 4

Intrinsic magnetic topological insulators offer low disorder and large magnetic band gaps for robust magnetic topological phases operating at higher temperatures. By controlling the layer thickness, emergent phenomena such as the quantum anomalous Hall (QAH) effect and axion insulator phases have been realized. Furthermore, these observations occur at temperatures significantly lower than the Néel temperature of bulk MnBi 2 Te 4 , and measurement of the magnetic energy gap at the Dirac point in ultrathin MnBi 2 Te 4 has yet to be achieved. Critical to achieving the promise of this system is a direct measurement of the layer-dependent energy gap and verification of a temperature-dependent topological phase transition from a large band gap QAH insulator to a gapless TI paramagnetic phase. Here we utilize temperature-dependent angle-resolved photoemission spectroscopy to study epitaxial ultrathin MnBi 2 Te 4 . We directly observe a layer-dependent crossover from a 2D ferromagnetic insulator with a band gap greater than 780 meV in one septuple layer (1 SL) to a QAH insulator with a large energy gap (>70 meV) at 8 K in 3 and 5 SL MnBi 2 Te 4 . The QAH gap is confirmed to be magnetic in origin, as it becomes gapless with increasing temperature above 8 K.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Scaling behavior of the quantum phase transition from a quantum-anomalous-Hall insulator to an axion insulator

The phase transitions from one plateau to the next plateau or to an insulator in quantum Hall and quantum anomalous Hall (QAH) systems have revealed universal scaling behaviors. A magnetic-field-driven quantum phase transition from a QAH insulator to an axion insulator was recently demonstrated in magnetic topological insulator sandwich samples. Here, we show that the temperature dependence of the derivative of the longitudinal resistance on magnetic field at the transition point follows a characteristic power-law that indicates a universal scaling behavior for the QAH to axion insulator phase transition. Similar to the quantum Hall plateau to plateau transition, the QAH to axion insulator transition can also be understood by the Chalker–Coddington network model. We extract a critical exponent κ ~ 0.38 ± 0.02 in agreement with recent high-precision numerical results on the correlation length exponent of the Chalker–Coddington model at ν ~ 2.6, rather than the generally-accepted value of 2.33.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Axion insulator state in hundred-nanometer-thick magnetic topological insulator sandwich heterostructures

Abstract An axion insulator is a three-dimensional (3D) topological insulator (TI), in which the bulk maintains the time-reversal symmetry or inversion symmetry but the surface states are gapped by surface magnetization. The axion insulator state has been observed in molecular beam epitaxy (MBE)-grown magnetically doped TI sandwiches and exfoliated intrinsic magnetic TI MnBi 2 Te 4 flakes with an even number layer. All these samples have a thickness of ~ 10 nm, near the 2D-to-3D boundary. The coupling between the top and bottom surface states in thin samples may hinder the observation of quantized topological magnetoelectric response. Here, we employ MBE to synthesize magnetic TI sandwich heterostructures and find that the axion insulator state persists in a 3D sample with a thickness of ~ 106 nm. Our transport results show that the axion insulator state starts to emerge when the thickness of the middle undoped TI layer is greater than ~ 3 nm. The 3D hundred-nanometer-thick axion insulator provides a promising platform for the exploration of the topological magnetoelectric effect and other emergent magnetic topological states, such as the high-order TI phase.

36 MATERIALS SCIENCE↗
DOE OSTI2025

TiSe 2 is a band insulator created by lattice fluctuations, not an excitonic insulator

TiSe 2 is a narrow-gap insulator with a rich array of unique properties. In addition to being a superconductor under certain modifications, it is commonly thought to be a rare realisation of an excitonic insulator. Below 200 K, TiSe 2 undergoes a transition from a high-symmetry ($P\bar{3}m1$) phase to a low-symmetry ($P\bar{3}c1$) charge density wave (CDW). Here we establish that it is indeed an insulator in both $P\bar{3}m1$ and $P\bar{3}c1$ phases. However, the insulating state is driven not by excitonic effects but by symmetry-breaking. In the CDW phase it is static. At high temperature, thermally driven instantaneous deviations from $P\bar{3}m1$ break the symmetry on the characteristic time scale of a phonon. Even though the time-averaged lattice structure assumes $P\bar{3}m1$ symmetry, the time-averaged energy band structure is closer to the CDW phase - a rare instance of a metal-insulator transition induced by dynamical symmetry breaking. We establish these conclusions from quasiparticle self-consistent GW (QSGW) and many-body calculations (QS$G\widehat{W}$), in combination with molecular dynamics simulations to capture the effects of thermal disorder. The many-body theory includes explicitly ladder diagrams in the polarizability, which incorporates excitonic effects in an ab initio manner. We find that the excitonic modification to the potential is weak, ruling out the possibility that TiSe 2 is an excitonic insulator.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Ion beam modification of topological insulator bismuth selenide

In this study, we demonstrate chemical doping of a topological insulator Bi 2 Se 3 using ion implantation. Ion beam-induced structural damage was characterized using grazing incidence X-ray diffraction and transmission electron microscopy. Ion damage was reversed using a simple thermal annealing step. Carrier-type conversion was achieved using ion implantation followed by an activation anneal in Bi 2 Se 3 thin films. These two sets of experiments establish the feasibility of ion implantation for chemical modification of Bi 2 Se 3 , a prototypical topological insulator. Ion implantation can, in principle, be used for any topological insulator. The direct implantation of dopants should allow better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation also enables the fabrication of inhomogeneously doped structures, which in turn should make possible new types of device designs.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes

The performance of thin film metal-insulator-metal (MIM) diodes is investigated for a variety of large and small electron affinity insulators using ultrasmooth amorphous metal as the bottom electrode. Nb{sub 2}O{sub 5}, Ta{sub 2}O{sub 5}, ZrO{sub 2}, HfO{sub 2}, Al{sub 2}O{sub 3}, and SiO{sub 2} amorphous insulators are deposited via atomic layer deposition (ALD). Reflection electron energy loss spectroscopy (REELS) is utilized to measure the band-gap energy (E{sub G}) and energy position of intrinsic sub-gap defect states for each insulator. E{sub G} of as-deposited ALD insulators are found to be Nb{sub 2}O{sub 5} = 3.8 eV, Ta{sub 2}O{sub 5} = 4.4 eV, ZrO{sub 2} = 5.4 eV, HfO{sub 2} = 5.6 eV, Al{sub 2}O{sub 3} = 6.4 eV, and SiO{sub 2} = 8.8 eV with uncertainty of ±0.2 eV. Current vs. voltage asymmetry, non-linearity, turn-on voltage, and dominant conduction mechanisms are compared. Al{sub 2}O{sub 3} and SiO{sub 2} are found to operate based on Fowler-Nordheim tunneling. Al{sub 2}O{sub 3} shows the highest asymmetry. ZrO{sub 2}, Nb{sub 2}O{sub 5}, and Ta{sub 2}O{sub 5} based diodes are found to be dominated by Frenkel-Poole emission at large biases and exhibit lower asymmetry. The electrically estimated trap energy levels for defects that dominate Frenkel-Poole conduction are found to be consistent with the energy levels of surface oxygen vacancy defects observed in REELS measurements. For HfO{sub 2}, conduction is found to be a mix of trap assisted tunneling and Frenkel-Poole emission. Insulator selection criteria in regards to MIM diodes applications are discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

An SF 6 gas-insulated −500 kV DC conical insulator vacuum feedthrough

A test electrode was biased to −500 kV direct current (DC) by means of a novel SF 6 gas-insulated conical alumina insulator feedthrough. The design enables the extreme high vacuum conditions required by spin-polarized electron sources by reducing the photogun vacuum chamber volume compared to coaxial cylindrical insulators. In contrast to conventional inverted-insulator photogun designs that rely on solid dielectric interfaces for high-voltage terminations, the present design employs a pressurized SF 6 intervening volume between a conical alumina insulator and a modified commercial epoxy high-voltage cable receptacle. Here, this approach enables the use of commercially available cable hardware while extending the demonstrated operating voltage of solid feedthroughs. A maximum voltage of −500 kV was applied to a test electrode attached to the narrow end of the feedthrough inside a chamber filled with SF 6 at 170.3 kPa (10 psig) and later under vacuum to −259 kV, limited by field emission. The results demonstrate that a commercial high-voltage cable combined with a custom-designed SF 6 gas-insulated vacuum feedthrough can be used to bias photogun electrodes to −500 kV DC.

Palacios-Serrano, Gabriel [Thomas Jefferson Nation↗
DOE OSTI2018

High Voltage Insulation and Gas Absorption of Polymers in High Pressure Argon and Xenon Gases

High pressure gas time projection chambers (HPGTPCs) are made with a variety of materials, many of which have not been well characterized in high pressure noble gas environments. As HPGTPCs are scaled up in size toward ton-scale detectors, assemblies become larger and more complex, creating a need for detailed understanding of how structural supports and high voltage insulators behave. This includes the identification of materials with predictable mechanical properties and without surface charge accumulation that may lead to field deformation or sparking. This paper explores the mechanical and electrical effects of high pressure gas environments on insulating polymers PTFE, HDPE, PEEK, POM and UHMW in Argon and Xenon, including studying absorption, swelling and high voltage insulation strength.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Slater Insulator in Iridate Perovskites with Strong Spin-Orbit Coupling

The perovskite (Pv) SrIrO 3 is an exotic narrow-band metal owing to a confluence of the strengths of the spin-orbit coupling (SOC) and the electron-electron correlations. It has been proposed that topological and magnetic insulating phases can be achieved by tuning the SOC, Hubbard interactions, and/or lattice symmetry. Here, we report that the substitution of nonmagnetic, isovalent Sn 4+ for Ir 4+ in the SrIr 1-x Sn x O 3 perovskites synthesized under high pressure leads to a metal-insulator transition to an antiferromagnetic phase at TN ≥ 225 K. The continuous change of the cell volume as detected by X-ray diffraction and the l-shape transition of the specific heat on cooling through TN demonstrate that the metal-insulator transition is of second-order. Neutron powder diffraction results indicate that the Sn substitution enlarges an octahedral-site distortion that reduces the SOC relative to the spin-spin exchange interaction and results in the type-G AF spin ordering below TN. Measurement of high-temperature magnetic susceptibility shows the evolution of magnetic coupling in the paramagnetic phase typical of weak itinerant-electron magnetism in the Sn-substituted samples. A reduced structural symmetry in the magnetically ordered phase leads to an electron gap opening at the Brillouin zone boundary below TN in the same way as proposed by Slater.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗