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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Expandable implant and implant system

An embodiment of the invention includes an expandable implant to endovascularly embolize an anatomical void or malformation, such as an aneurysm. An embodiment is comprised of a chain or linked sequence of expandable polymer foam elements. Another embodiment includes an elongated length of expandable polymer foam coupled to a backbone. Another embodiment includes a system for endovascular delivery of an expandable implant (e.g., shape memory polymer) to embolize an aneurysm. The system may include a microcatheter, a lumen-reducing collar coupled to the distal tip of the microcatheter, a flexible pushing element detachably coupled to an expandable implant, and a flexible tubular sheath inside of which the compressed implant and pushing element are pre-loaded. Other embodiments are described herein.

Wilson, Thomas S.↗
DOE OSTI2017

Effects of Channel Implant Variation on Radiation-Induced Edge Leakage Currents in n-Channel MOSFETs

The effects of radiation-induced defects and statistical variation in the dose and energy of MOSFET channel implants in a modern bulk CMOS technology are modeled using a process simulator in combination with analytical computations. The model integrates doping profiles obtained from process simulations and experimentally determined defect potentials into implicit surface potential equations. Solutions to these equations are then used to model radiation-induced edge leakage currents in 90-nm bulk CMOS n-channel MOSFETs. The results indicate that slight variations in the channel implant parameters can have a significant impact on the doping profile along the shallow trench isolation sidewall and thus the radiation-induced edge leakage currents.

42 ENGINEERING↗
DOE OSTI2016

Atomistic simulations of tungsten surface evolution under low-energy neon implantation

Tungsten is a candidate material for the divertor of fusion reactors, where it will be subject to a high flux of particles coming from the fusion plasma as well as a significant heat load. Under helium plasma exposure in fusion-reactor-like conditions, a nanostructured morphology is known to form on the tungsten surface in certain temperature and incident energy ranges, although the formation mechanism is not fully established. A recent experimental study (Yajima et al 2013 Plasma Sci. Technol. 15 282-6) using neon or argon exposure did not produce similar nanostructure. Here, this article presents molecular dynamics simulations of neon implantation in tungsten aimed at investigating the surface evolution and elucidating the role of noble gas mass in fuzz formation. Finally, in contrast to helium, neon impacts can sputter both tungsten and previously implanted neon atoms. The shorter range of neon ions, along with sputtering, limit the formation of large bubbles and likely prevents nanostructure formation.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1993

Implantation of nitrogen: Effects of hydrogen and implantation energy

To solve the question on solar nitrogen in lunar soils, i.e. variation in isotopic composition and apparently high retentivity compared with rare gases, nitrogen implantation experiments were conducted. At the Meteoritical Society Meeting in Copenhagen, the results of stepped combustion of implanted nitrogen in ilmenite and olivine were presented. The degassing behavior of nitrogen (and also Ar) was quite different from that observed in the case of lunar soils. Extraction temperatures are higher (greater than 1100 C for ilmenite and 1500 C for olivine) than that for lunar soils. Both nitrogen and Ar seem to be retained at the same efficiency. Therefore, additional experiments were conducted to make degassing behavior of nitrogen more close to that observed in the case of lunar soils.

Sugiura, Naoji↗
DOE OSTI2018

From Metal-Organic Frameworks to Single-Atom Fe Implanted N-doped Porous Carbons: Efficient Oxygen Reduction in Both Alkaline and Acidic Media [From MOFs to Single Fe Atoms Implanted N-doped Porous Carbons: Efficient Oxygen Reduction in Both Alkaline and Acidic Media]

Here, it remains highly desired but a great challenge to achieve atomically dispersed metals in high loadings for efficient catalysis. Now porphyrinic metal–organic frameworks (MOFs) have been synthesized based on a novel mixed–ligand strategy to afford high–content (1.76 wt %) single–atom (SA) iron–implanted N–doped porous carbon (Fe SA –N–C) via pyrolysis. Thanks to the single–atom Fe sites, hierarchical pores, oriented mesochannels and high conductivity, the optimized Fe SA –N–C exhibits excellent oxygen reduction activity and stability, surpassing almost all non–noble–metal catalysts and state–of–the–art Pt/C, in both alkaline and more challenging acidic media. More far–reaching, this MOF–based mixed–ligand strategy opens a novel avenue to the precise fabrication of efficient single–atom catalysts.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Fabrication and characterization of a co-planar detector in diamond for low energy single ion implantation

We demonstrate low energy single ion detection using a co-planar detector fabricated on a diamond substrate and characterized by ion beam induced charge collection. Histograms are taken with low fluence ion pulses illustrating quantized ion detection down to a single ion with a signal-to-noise ratio of approximately 10. We anticipate that this detection technique can serve as a basis to optimize the yield of single color centers in diamond. In conclusion, the ability to count ions into a diamond substrate is expected to reduce the uncertainty in the yield of color center formation by removing Poisson statistics from the implantation process.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Amorphization resistance of nanocrystalline 3C-SiC implanted with H2+ ions

Compared to single-crystal SiC, nanocrystalline SiC with high densities of stacking faults has been reported to be much more resistant to amorphization under self-ion and electron irradiations. This study examines H2+ ion irradiation-induced amorphization in nanocrystalline 3C-SiC with dense stacking faults using transmission electron microscopy. The results show that full amorphization at room temperature occurs at a comparable dose to that for its single-crystal SiC counterpart under the identical irradiation conditions. Both materials are amorphized as a result of local damage accumulation. The formation of the nucleation sites for amorphization is not appreciably affected by the presence of stacking faults and grain boundaries. The behavior may be attributed to the significant chemical effects that may completely immobilize the point defects in SiC at room temperature. The results suggest cautions be excised to use nanocrystalline SiC materials in high H irradiation environment at room temperature. Further studies of the H behavior at elevated temperatures are warranted.

Amorphization, ion irradiation, SiC↗