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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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33 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

A High-Current Pulsed Prototype Power Supply

The Accelerator Controls Operations Research Network (ACORN) project aims to modernize the accelerator control system and replace aging power supplies at Fermilab. As part of this effort, outdated RF ferrite bias power supplies will be redesigned. These power supplies are essential for tuning the resonant frequency of RF cavities by delivering programmable current outputs of up to 2500 A and voltages ranging from −10 V to +35 V. They operate at a repetition rate of 15 Hz in the Booster ring, and 1 Hz at the Main Injector ring. The power supplies utilize a bank of transistors in the linear region, connected in parallel with the load, to actively regulate the output current from a 12-pulse SCR bridge. To support this upgrade, a new bias power supply topology was developed as proof of concept. The design utilizes an IGBT Hbridge operating in Pulse Width Modulation (PWM) mode, controlled by a microcontroller. A prototype, constructed using spare components, successfully delivered an output current of 500 A at a repetition rate of 15 Hz during initial testing. The circuit's bandwidth was measured at 480 Hz, highlighting opportunities for further optimization in the controller design to achieve the target bandwidth of 2 kHz.

Bullman, Austin [ORNL]↗
DOE OSTI2025

A Two-Stage Current Limiting Control Strategy for Direct-Droop-Controlled Grid-Forming Inverters

This paper presents a two-stage current limiting control strategy with fault ride-through capability for the direct-droop-controlled grid-forming (GFM) inverters. The proposed approach comprises Stage 1 and Stage 2 current limiting controls. During faults, Stage 1 current limiting control instantly clamps the inverter output current magnitude to its maximum transient limit by blocking the switching pulses to the insulated-gate bipolar transistors (IGBTs) with the help of a hysteresis loop control, and Stage 2 current limiting control limits the inverter output current magnitude to its steady-state limit by regulating the amplitude and frequency of the modulating waveform utilizing the active and reactive current limiting control loops. By implementing the current limiting actions in two stages, this approach can effectively limit the over-current within a few cycles after the fault occurrence and ensure synchronism to the grid after long-term fault events. The efficacy of the proposed control approach is validated through electromagnetic transient (EMT) simulation results conducted on a single GFM inverter-based test system and the IEEE 39-bus test system with multiple GFM inverters in the PSCAD platform.

Mohiuddin, Sheik Mohammad↗
DOE OSTI2026

Commissioning of the Power Supplies and Coils of the SMART Tokamak

The small aspect ratio tokamak (SMART) is a spherical tokamak (ST) that offers unique capabilities for studying the potential of negative triangularity. It has been designed, constructed, and is currently being operated by the Plasma Science Fusion Technology (PSFT) Laboratory at the University of Seville. SMART has a total of 21 coils, organized into seven independent circuits and driven by five modular power supplies (PS). The PS operation relies on switching converter technology based on IGBT and supercapacitors (SCs). The PS delivers predefined current waveforms to the copper coil system consisting of the central solenoid (CS), 12 toroidal field (TF) coils, three series pairs of poloidal field (PF) coils, and two independent PF coils. This study details the commissioning and validation of the PS toroidal and solenoid coils, as well as the assembly of coils in SMART. The maximum rated current and slope were measured, along with the series impedance of the coils, the output current ripple, and the noise levels. The internal parameters of the SCs were measured, and optimized current profiles were proposed to enhance overall performance. A comparison has been made between the theoretical values and the experimental results, providing insight into the performance of the PS and areas for improvement.

Power electronics↗
DOE OSTI2026

Two-Phase Cooling for High Packaging Density Planar Inverter: Cooperative Research and Development Final Report, CRADA Number CRD-15-00592

The project objective was to utilize two-phase heat transfer to enable compact and power-dense inverters. The high heat transfer capacity and near isothermal characteristics of two-phase cooling can enable higher power densities, reducing the size and cost of the power electronics system. This project focused on developing efficient, passive (no pump or compressor) two-phase cooling strategies that consist of an air-cooled condenser and evaporator. This report describes the modeling work conducted to design the evaporator and air-cooled condenser for a prototype inverter development work underway in the John Deere. Prototypes of the final evaporator and condenser designs were then fabricated via 3D printing for testing. Experiments on the evaporator confirmed that this component can meet the heat load and junction temperatures requirements for Si IGBT (insulated-gate bipolar transistor) inverter. Experiments with the air-cooled condenser were not possible due to leaks through the condenser walls.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2021

Highly Integrated Wide Bandgap Power Module for Next Generation Plug-In Vehicles (Final Report)

Wide bandgap devices are key enablers for high power density traction inverters. A highly integrated wide bandgap (WBG) power module enables higher temperature operation, higher inverter efficiency and overall smaller die area with the same power delivery. However, it requires careful design of the power module to take advantage of all the superior material properties that silicon carbide (SiC) provides over conventional silicon (Si) Insulated Gate Bipolar Transistor (IGBT) based design. This project developed an efficient and densely packed SiC power module for an automotive traction inverter application. Extensive study was performed to select the best performing SiC die considering a wide range of temperature variation, suitability to integrate into target packaging, robust body diode performance and overall high electrical efficiency. Multiple design ideas were explored to achieve lower stray inductance for both power loop and signal loop, uniform current distribution, compact form factor, and very high thermal performance. The final power module package includes all six inverter switches in the same module (six-pack) with die sintered at both bottom and top surfaces utilizing high performance substrate to achieve high electrical and thermal performance. Two power module variants were developed using 900 V and 1200 V devices for operating at two different high voltage levels (> 600 V HV battery). Both power modules were comprehensively characterized, and high efficiency operation of the inverter was confirmed through analysis. Finally, a complete functional inverter was built with the 1200V power modules using other essential components (HV capacitors, gate driver board, controller board, current sensor, connectors etc.) and tested using GM’s standard test procedure. There are several challenges associated with adopting WBG devices for high voltage operation. In order to assess and mitigate those challenges, GM and subrecipients of this project have conducted multiple detailed studies. This includes phase current reconstruction using integrated Rogowski coil, device junction temperature estimation using on-state gate resistance, modeling and testing the effect of high voltage and fast switching on motor insulation and bearings, partial discharge inception voltage measurement under different environmental conditions. Findings of all these studies are summarized in this report.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2022

The BREKTRIA 500 – A Breakthrough in Technology and Power Density for an Advanced 500kW Utility-Scale String Inverter (Final Technical Report)

The primary goal of this development project, planned to be 36 months in duration, was to create a 500kW utility-scale string inverter, demonstrating an advanced hybrid architecture that would achieve unprecedented high power density, and bring the inverter to the stage of production readiness. Specific key objectives for the 500kW utility-scale string inverter were: Create a 500kW 3-phase 600Vac inverter that was similar in overall size to the existing 250kW string inverters in the market, thereby demonstrating dramatically increased power density; Achieve a cost of goods, including all manufacturing-related costs and overheads, at or below 2.5¢/Wac ($12,500); Demonstrate full-power operation at a 45-50C ambient temperature with no power de-rating; Accommodate a PV array DC input of up to 1MWdc, aka a DC/AC Ratio of 2.0; Demonstrate peak efficiency greater than 99% at any operating dc voltage, and a CEC weighted average efficiency greater than or equal to 98.5%. The motivation for this project was to leapfrog the competition by creating the world’s most powerful string inverter, utilizing an innovative topology and achieving a step change increase in power density. Achieving the goals of the project would have enabled Yaskawa Solectria Solar to demonstrate its technology leadership, manufacture the utility-scale string inverter in the company’s facilities in Illinois, and bring to the market a highly-differentiated and compelling product to help the company grow its share in the large and growing utility market segment. During the course of this project, BREK Electronics’ hybrid architecture inverter was taken from an early-stage 125kW prototype, to a more mature and successfully demonstrated power stage at twice the power. Two 250kW power stages were planned to build the 500kW inverter. Significant progress was made in the inverter controls, achieving a clean AC sinewave and closed-loop operation into the grid, and improved efficiency by control of the high-speed switching. Further, the updated 250kW power stage was on track to achieve full power operation at an ambient temperature of 50C. At the time of the project’s closure in September 2022, global semiconductor supply remained limited, with shortages creating dramatic swings in both availability and price. Given this situation, our ability to predict cost-of-goods two years out with any accuracy or confidence was limited. As a result, the probability of attaining the target cost of 2.5¢/Wac for the 500kW inverter remained uncertain at the closure of the project. This project successfully demonstrated the potential for the advanced hybrid architecture inverter that emerged from a decade of university research on Si IGBTs and SiC mosfets, leading to this unique inverter topology. The team has taken the first steps toward an evolutionary advancement in inverter technology that remains to be fully realized.

14 SOLAR ENERGY↗
DOE OSTI2024

High Efficiency Powertrain for Heavy Duty Trucks Using Silicon Carbide (SiC) Inverter

The objective of the High Efficiency Propulsion (HEP) project is to research, develop, and demonstrate life cycle cost-effective Class 8 battery electric vehicles utilizing an 800 V high efficiency and compact 250 kW continuous power SiC inverter designed to support the commercial operations of the high continuous loads and challenging shock/vibration environment of heavy-duty trucks with an electrified axle specifically designed for high performance and efficiency in battery-electric Class 8 trucks used in medium range (~250 miles) distribution, and compared to the baseline Peterbilt 579 electric truck fleet performance using an IGBT inverter. The project was split into 3 budget periods, with the first two being design and development focused, and the final one is an on-vehicle demonstration phase of the high efficiency SiC traction drive inverter with daily mileage accumulation.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2023

PV Inverter Systems Enabled by Monolithically Integrated SiC based Four Quadrant Power Switch (4-QPS) [BiDFET]

The purpose of this project was to develop a new breed of Power Conversion Systems (PCS) for PV integration that is enabled by the newly developed 4-Quadrant Single Die SiC Power Semiconductor Switches (4-QPS) or also referred to as “Bidirectional FET (BIDFET)”. This work includes semiconductor die development, advanced packaging, converter design, development, and testing of 4-QPS enabled hardware prototypes at 1 kW (for single phase residential application) and 10 kW (for three phase commercial application). The BiDirectional Field-Effect Transistor (BiDFET) can enable circuit topologies requiring four-quadrant switches, that were earlier designed using discrete combinations of MOSFETs, IGBTs, GaN HEMTs, and PiN diodes. The monolithic nature of the BiDFET allows lower device count, smaller switch volume, lower inductance, and simpler packaging, and hence more reliable and commercially viable implementation in power electronics converters. The matrix converter topologies, now feasible using BiDFETs, can eliminate the bulky and unreliable dc link capacitors or inductors required for conventional voltage-source or current-source converters in ac–ac and ac–dc applications. The 1.2 kV BiDFET has the potential to disrupt all the applications utilizing 1.2 kV switches, including electric vehicle (EV) drivetrain, bidirectional EV chargers, industrial motor drives, solid-state transformers, datacenter power supplies, elevator drives, dc microgrids, energy storage grid integration, solid-state breakers, etc.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2022

Application of Convolutional and Feedforward Neural Networks for Fault Detection in Particle Accelerator Power Systems

High voltage converter modulators (HVCM) provide power to the accelerating cavities of the spallation neutron source (SNS) facility. HVCM experience catastrophic failures, which increase the downtime of the SNS and reduce beam time. The faults may occur due to different reasons including failures of the resonant capacitor, core saturation due to the magnetic flux, insulated-gate bipolar transistor (IGBT) failures, and others. We recently have setup a HVCM test stand to develop and test machine learning models for anomaly detection and fault prognostics. In this work, we propose binary classifiers and autoencoder architectures based on convolutional (CNN) and feedforward neural networks (FNN) to facilitate distinguishing normal from faulty waveforms coming from the HVCM during operation. The results indicate that the CNN binary classifier is the best model among the four showing very stable performance in the training and testing sets with impressive metrics of precision and recall reaching up to 99\% with a very small uncertainty. The FNN classifier shows the least performance with a large uncertainty in its metrics. The performances of the two autoencoders based on CNN and FNN were in between, showing very good performance nonetheless.

Radaideh, Majdi↗
DOE OSTI2021

Semiconductor topologies and devices for soft starting and active fault protection of power converters

Various examples are provided related to semiconductor topologies and devices that can be used for soft starting and active fault protection of power converters. In one example, an active switch device includes an active switch having a gating control input; and a thyristor having a gating control input. The thyristor is coupled in parallel with the active switch. The active switch can be an IGBT, MOSFET, or other appropriate device. In another example, a power converter can include the active switch devices and switching control circuitry coupled to gating control inputs of the active switch devices.

Beddingfield, Richard B.↗
DOE OSTI2022

Metal oxide semiconductor (MOS) controlled devices and methods of making the same

Metal-Oxide-Semiconductor (MOS) controlled semiconductor devices and methods of making the devices are provided. The devices include a gate which controls current flow through channel regions positioned between source/emitter and drain regions of the device.The devices include a gate oxide layer having a variable thickness. The thickness of the gate oxide layer under the edge of the gate and over the source/emitter regions is different than the thickness over the channel regions of the device. The oxide layer thickness near the edge of the gate can be greater than the oxide layer thickness over the channel regions. The source/emitter regions can be implanted to provide enhanced oxide growth during gate oxide formation. The source/emitter region can include regions that are implanted to provide enhanced oxide growth during gate oxide formation and regions which do not provide enhanced oxide growth during gate oxide formation. The devices can be SiC devices such as SiC MOSFETs and SiC IGBTs.

Matocha, Kevin↗
DOE OSTI2024

Solid state protective smart plug device

A wireless-controlled smart plug device and methods of use and operation, using a solid state switch to provide electrical power from an outlet to a load, and provide protection against overload, short circuit, ground, arc, or voltage surge faults. The switch includes a bidirectional semiconductor switch with two back-to-back connected transistors, such as silicon power MOSFETs, silicon insulated-gate bipolar transistors (IGBTs), silicon carbide (SiC) transistors, or gallium nitride (GaN) transistors, each configured to control the current flow from the electrical receptacle to the external electrical load.

Shen, Zheng↗
DOE OSTI2021

Interposed pulsed power system for fast separation of radioactive beams

This paper presents the novel design of an interposed pulsed power system, developed to drive a fast-switching magnet with a large multi-mH load inductance, and high field amplitude (> 1 T). This modulator can produce variable flat-top pulses from 1 to 30 ms with rise and fall times of less than 0.5 ms at a variable duty cycle of 3–91% into a heavily inductive load. The system employs a novel over-voltage topology to overcome the inherent inductance and achieve the fast rise and fall times, switching to a precision DC supply to efficiently maintain the flattop without requiring many-kV voltage. We present a power source design consideration, including the results of computer modeling as well as the first experimental results of a modulator scaled test model will also be presented.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Model Reduction by Generalized Falk Method for Efficient Field-Circuit Simulations

The Generalized Falk Method (GFM) for coordinate transformation, together with two model-reduction strategies based on this method, are presented for efficient coupled field-circuit simulations. Each model-reduction strategy is based on a decision to retain specific linearly-independent vectors, called trial vectors, to construct a vector basis for coordinate transformation. The reduced-order models are guaranteed to be stable and passive since the GFM is a congruence transformation of originally symmetric positive definite systems. We also show that, unlike the Pad´e-via-Lanczos (PVL) method, the GFM does not generate unstable positive poles while reducing the order of circuit problems. Further, the proposed GFM is also faster when compared to methods of the type Lanczos (or Krylov) that are already widely used in circuit simulations for electrothermal and electromagnetic problems. The concept of response participation factors is introduced for the selection of the trial vectors in the proposed model-reduction methods. Further, we present methods to develop simple equivalent circuit networks for the field component of the overall field-circuit system. The implementation of these equivalent circuit networks in circuit simulators is discussed. With the proposed model-reduction strategies, significant improvement on the efficiency of the generalized Falk method is illustrated for coupled field-circuit problems.

42 ENGINEERING↗