Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “IGBT”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

High power pulse systems for surface processing

A high-power pulsed surface processing system includes insulated-gate bipolar transistors (IGBT) to replicate desirable pulse structures with high precision, at low cost, and with high reliability within a single system. The pulsed surface processing system includes a power supply, an anode and a cathode, a dual gate driver supplying power to one or more IGBT gates, and one or more capacitor banks. Pulse formation software controls the timing and duration of electrical pulses to the electrodes. A freewheeling diode protects the system from an abrupt reduction of current in the circuit. The high-power pulsed surface processing system may be used to control versatile and complex pulse structures while with precise control of instantaneous pulse powers, pulse timing, and process control. The inclusion of dual gate drivers also offers the ability for multiple pulsers to be created and “slaved” together for a wide variety of custom processes.

Tian, Hui↗
DOE OSTI2025

Evaluating switch lifetime in soft-switched single-stage differential-mode SST

The reliability of semiconductor switches in single-stage differential-mode solid-state transformers (DM-SSTs) has not been systematically evaluated under soft-switching operation and realistic grid conditions. This paper presents a switch-level reliability analysis for soft-switched and hard-switched DM-SST configurations by integrating converter-specific power loss modeling with empirical lifetime prediction. Analytical derivation of device current profiles specific to the DM-SST is used to characterize electrothermal stress, which is then mapped to lifetime using degradation models obtained from power cycling tests (PCTs). Applied to realistic SST load profiles and grid voltage variations, this approach provides a probabilistic prediction of switch lifetime for the DM-SST. Lifetime estimates for both SiC MOSFETs and Si IGBTs are presented, offering insight into device degradation under converter operating conditions. The results quantify the reliability benefits of soft switching in single-stage SSTs, highlighting how switching dynamics influence long-term switch degradation.

14 SOLAR ENERGY↗
DOE OSTI2022

Open-circuit submodule fault diagnosis in MMCs using support vector machines

Series connection of semiconductor submodules (SM) in a modular multilevel converter (MMC) makes the MMC prone to open-circuit (OC) IGBT failures inside SMs. If left undetected, these faults degrade the operation of the MMC and lead to its instability. This article proposes a method to detect, localise, and classify single OC SM faults in an MMC using support vector machines (SVM) trained with data obtained from the capacitor voltage balancing block of the MMC control system. The proposed method relies on data extracted from the sorted capacitor voltage arrays of the upper and lower phase arms. Therefore, it does not require extra measurements and hardware. Additionally, it offers a fixed time for detecting and localising OC SM faults. This method is easy to implement as SVM has a simple decision function. Time-domain simulation case studies are performed on a three-phase nine-level MMC to evaluate the performance of the proposed method.

42 ENGINEERING↗
DOE OSTI2022

A Current Limiting Control Strategy for Single-Loop Droop-Controlled Grid-Forming Inverters Under Balanced and Unbalanced Faults

Existing studies reporting current limiting control strategies for grid-forming inverters primarily focus on grid-forming inverters that use a multi-loop control structure. This study reports a current limiting control for grid-forming inverters that uses a single-loop control structure. The proposed current limiting control was implemented at the pulse width modulation (PWM) control layer to guarantee a rapid response. Once an overcurrent caused by severe faults is detected, the proposed control strategy immediately blocks relevant insulated-gate bipolar transistors (IGBTs) using a hysteresis loop, ensuring that the overcurrent is limited within a few PWM cycles. After the fault is cleared, the inverter seamlessly transfers back to droop control mode to maintain stability. The current limiting control has been tested in a microgrid environment operating in the OPAL-RT platform. Study results show that the control strategy can effectively limit the overcurrent under both balanced and unbalanced faults and can maintain system transient stability after the fault is cleared.

Du, Wei↗
DOE OSTI2023

Isolated Single-stage Three-phase AC/DC Converter using Bidirectional Switches

The advent of the SiC Bidirectional FET (BiDFET), a monolithic 1.2 kV bidirectional switch, has rendered the single-stage three-phase AC/DC converter topology a promising approach for implementing AC/DC converters. This topology, which integrates a full-bridge converter with a single-phase to three-phase matrix converter via a high-frequency transformer, is particularly suitable for applications requiring galvanic isolation, buck-boost functionality, and bidirectional power flow. The single-stage design eliminates the need for bulky and unreliable electrolytic capacitors, and utilizes a single magnetic component for power transfer. In the matrix converter, bidirectional switches, which were traditionally implemented using combinations of multiple semiconductor devices such as MOSFETs, IGBTs, and diodes, can now be realized using the single-chip solution, BiDFET. This advancement leads to a lower switch count, compact converter implementation, with lower inductance commutation cells, thereby enhancing the overall efficiency and compactness of the system. The paper presents a unified model of the converter, considering all control parameters, including the duty cycles and phase shift of transformer voltages. Detailed expressions for power transfer, transformer currents, and currents at AC and DC ports are provided. Additionally, the paper outlines the conditions necessary for soft-switching of all switches and the commutation schemes required for the practical implementation of the matrix converter modulation scheme. A hardware prototype of a 10 kW, 480 VRMS, LL/ 800 V AC/DC system has been developed, and experimental results are presented to demonstrate its performance.

BiDFET↗
DOE OSTI2024

DC Microgrid Reliability Enhancement with Adaptive Converter Thermal Management

Due to the different device selections, aging levels, and thermal dissipation performance, some converters may take additional thermal stress on switching devices than others in paralleled converter systems, which will reduce system reliability. To address this problem, this paper proposes a power-sharing strategy with adaptive thermal management. First, the temperature-based power loss model and electrical-thermal model are established. Based on that, a high-accuracy IGBT junction temperature estimate considering the power loss-temperature coupling can be achieved. Further, the thermal-sharing for all the switching devices in paralleled converters can be achieved with the proposed adaptive thermal management strategy. The proposed strategy can change the power-sharing ratio adaptively according to the system operation conditions, which will contribute to the system reliability enhancement. The effectiveness of the proposed strategy is verified through PLECS thermal simulation and joint real-time simulation with Dspace and RT-box.

DC microgrid↗
DOE OSTI2023

Grid-Tied PV Inverter with Oversized Power Module to Increase its Low-Voltage Ride Through (LVRT) Capabilities and VAR Support

This paper proposes a novel design for grid-tied 3-ph Photovoltaic (PV) inverter to improve its low-voltage ride through (LVRT) response while significantly increasing its voltampere reactive (VAR) support during voltage sags. The literature available on LVRT for PV inverters can be grouped in solutions that dissipate the excess energy and those that temporary stores this energy. This paper proposes a third solution; oversizing inverter hardware components to safely transferring all the energy excess back to while maintaining the semiconductor under the maximum temperature limits. The advantages of the proposed approach are: 1) Improved LVRT capabilities and stable dc-link voltage control at MPP during sags. 2) Increased VAR support during voltage sags. 3) Increased use of renewable energy as all active power is injected back to the grid during voltage sags. Finally, the proposed solution is more cost effective compared with solutions that incorporate energy storage because only a few inverter components are required to be oversized. This paper also presents a detailed power loss analysis, which determined that that oversizing the power semiconductors has minimal impact in the inverter losses while significatively reducing the diode and IGBT conduction losses during both normal operation and grid fault conditions.

Ferrari Maglia, Max↗
DOE OSTI2023

Power Conversion Systems Enabled by SiC BiDFET Device

The BiDirectional Field-Effect Transistor (BiDFET) can enable circuit topologies requiring four quadrant switches, that were earlier designed using discrete combinations of MOSFETs, IGBTs, GaN HEMTs and PiN diodes. The monolithic nature of the BiDFET allows lower device count, smaller switch volume, lower inductance, and simpler packaging, and hence more reliable and commercially viable implementation in power electronics converters. Furthermore, the matrix converter topologies, now feasible using BiDFETs, can eliminate the bulky and unreliable dc link capacitors or inductors required for conventional voltage-source or current-source converters in ac-ac and ac dc applications. The 1.2 kV BiDFET has the potential to disrupt all the applications utilizing 1.2 kV switches, including electric vehicle (EV) drivetrain, bidirectional EV chargers, industrial motor drives, solid-state transformers, datacenter power supplies, elevator drives, dc microgrids, energy storage grid integration, solid-state breakers, etc.

42 ENGINEERING↗
DOE OSTI2025

A High-Current Pulsed Prototype Power Supply

The Accelerator Controls Operations Research Network (ACORN) project aims to modernize the accelerator control system and replace aging power supplies at Fermilab. As part of this effort, outdated RF ferrite bias power supplies will be redesigned. These power supplies are essential for tuning the resonant frequency of RF cavities by delivering programmable current outputs of up to 2500 A and voltages ranging from −10 V to +35 V. They operate at a repetition rate of 15 Hz in the Booster ring, and 1 Hz at the Main Injector ring. The power supplies utilize a bank of transistors in the linear region, connected in parallel with the load, to actively regulate the output current from a 12-pulse SCR bridge. To support this upgrade, a new bias power supply topology was developed as proof of concept. The design utilizes an IGBT Hbridge operating in Pulse Width Modulation (PWM) mode, controlled by a microcontroller. A prototype, constructed using spare components, successfully delivered an output current of 500 A at a repetition rate of 15 Hz during initial testing. The circuit's bandwidth was measured at 480 Hz, highlighting opportunities for further optimization in the controller design to achieve the target bandwidth of 2 kHz.

Bullman, Austin [ORNL]↗
DOE OSTI2025

A Two-Stage Current Limiting Control Strategy for Direct-Droop-Controlled Grid-Forming Inverters

This paper presents a two-stage current limiting control strategy with fault ride-through capability for the direct-droop-controlled grid-forming (GFM) inverters. The proposed approach comprises Stage 1 and Stage 2 current limiting controls. During faults, Stage 1 current limiting control instantly clamps the inverter output current magnitude to its maximum transient limit by blocking the switching pulses to the insulated-gate bipolar transistors (IGBTs) with the help of a hysteresis loop control, and Stage 2 current limiting control limits the inverter output current magnitude to its steady-state limit by regulating the amplitude and frequency of the modulating waveform utilizing the active and reactive current limiting control loops. By implementing the current limiting actions in two stages, this approach can effectively limit the over-current within a few cycles after the fault occurrence and ensure synchronism to the grid after long-term fault events. The efficacy of the proposed control approach is validated through electromagnetic transient (EMT) simulation results conducted on a single GFM inverter-based test system and the IEEE 39-bus test system with multiple GFM inverters in the PSCAD platform.

Mohiuddin, Sheik Mohammad↗
DOE OSTI2026

Commissioning of the Power Supplies and Coils of the SMART Tokamak

The small aspect ratio tokamak (SMART) is a spherical tokamak (ST) that offers unique capabilities for studying the potential of negative triangularity. It has been designed, constructed, and is currently being operated by the Plasma Science Fusion Technology (PSFT) Laboratory at the University of Seville. SMART has a total of 21 coils, organized into seven independent circuits and driven by five modular power supplies (PS). The PS operation relies on switching converter technology based on IGBT and supercapacitors (SCs). The PS delivers predefined current waveforms to the copper coil system consisting of the central solenoid (CS), 12 toroidal field (TF) coils, three series pairs of poloidal field (PF) coils, and two independent PF coils. This study details the commissioning and validation of the PS toroidal and solenoid coils, as well as the assembly of coils in SMART. The maximum rated current and slope were measured, along with the series impedance of the coils, the output current ripple, and the noise levels. The internal parameters of the SCs were measured, and optimized current profiles were proposed to enhance overall performance. A comparison has been made between the theoretical values and the experimental results, providing insight into the performance of the PS and areas for improvement.

Power electronics↗
DOE OSTI2026

Two-Phase Cooling for High Packaging Density Planar Inverter: Cooperative Research and Development Final Report, CRADA Number CRD-15-00592

The project objective was to utilize two-phase heat transfer to enable compact and power-dense inverters. The high heat transfer capacity and near isothermal characteristics of two-phase cooling can enable higher power densities, reducing the size and cost of the power electronics system. This project focused on developing efficient, passive (no pump or compressor) two-phase cooling strategies that consist of an air-cooled condenser and evaporator. This report describes the modeling work conducted to design the evaporator and air-cooled condenser for a prototype inverter development work underway in the John Deere. Prototypes of the final evaporator and condenser designs were then fabricated via 3D printing for testing. Experiments on the evaporator confirmed that this component can meet the heat load and junction temperatures requirements for Si IGBT (insulated-gate bipolar transistor) inverter. Experiments with the air-cooled condenser were not possible due to leaks through the condenser walls.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2022

The BREKTRIA 500 – A Breakthrough in Technology and Power Density for an Advanced 500kW Utility-Scale String Inverter (Final Technical Report)

The primary goal of this development project, planned to be 36 months in duration, was to create a 500kW utility-scale string inverter, demonstrating an advanced hybrid architecture that would achieve unprecedented high power density, and bring the inverter to the stage of production readiness. Specific key objectives for the 500kW utility-scale string inverter were: Create a 500kW 3-phase 600Vac inverter that was similar in overall size to the existing 250kW string inverters in the market, thereby demonstrating dramatically increased power density; Achieve a cost of goods, including all manufacturing-related costs and overheads, at or below 2.5¢/Wac ($12,500); Demonstrate full-power operation at a 45-50C ambient temperature with no power de-rating; Accommodate a PV array DC input of up to 1MWdc, aka a DC/AC Ratio of 2.0; Demonstrate peak efficiency greater than 99% at any operating dc voltage, and a CEC weighted average efficiency greater than or equal to 98.5%. The motivation for this project was to leapfrog the competition by creating the world’s most powerful string inverter, utilizing an innovative topology and achieving a step change increase in power density. Achieving the goals of the project would have enabled Yaskawa Solectria Solar to demonstrate its technology leadership, manufacture the utility-scale string inverter in the company’s facilities in Illinois, and bring to the market a highly-differentiated and compelling product to help the company grow its share in the large and growing utility market segment. During the course of this project, BREK Electronics’ hybrid architecture inverter was taken from an early-stage 125kW prototype, to a more mature and successfully demonstrated power stage at twice the power. Two 250kW power stages were planned to build the 500kW inverter. Significant progress was made in the inverter controls, achieving a clean AC sinewave and closed-loop operation into the grid, and improved efficiency by control of the high-speed switching. Further, the updated 250kW power stage was on track to achieve full power operation at an ambient temperature of 50C. At the time of the project’s closure in September 2022, global semiconductor supply remained limited, with shortages creating dramatic swings in both availability and price. Given this situation, our ability to predict cost-of-goods two years out with any accuracy or confidence was limited. As a result, the probability of attaining the target cost of 2.5¢/Wac for the 500kW inverter remained uncertain at the closure of the project. This project successfully demonstrated the potential for the advanced hybrid architecture inverter that emerged from a decade of university research on Si IGBTs and SiC mosfets, leading to this unique inverter topology. The team has taken the first steps toward an evolutionary advancement in inverter technology that remains to be fully realized.

14 SOLAR ENERGY↗
DOE OSTI2024

High Efficiency Powertrain for Heavy Duty Trucks Using Silicon Carbide (SiC) Inverter

The objective of the High Efficiency Propulsion (HEP) project is to research, develop, and demonstrate life cycle cost-effective Class 8 battery electric vehicles utilizing an 800 V high efficiency and compact 250 kW continuous power SiC inverter designed to support the commercial operations of the high continuous loads and challenging shock/vibration environment of heavy-duty trucks with an electrified axle specifically designed for high performance and efficiency in battery-electric Class 8 trucks used in medium range (~250 miles) distribution, and compared to the baseline Peterbilt 579 electric truck fleet performance using an IGBT inverter. The project was split into 3 budget periods, with the first two being design and development focused, and the final one is an on-vehicle demonstration phase of the high efficiency SiC traction drive inverter with daily mileage accumulation.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2023

PV Inverter Systems Enabled by Monolithically Integrated SiC based Four Quadrant Power Switch (4-QPS) [BiDFET]

The purpose of this project was to develop a new breed of Power Conversion Systems (PCS) for PV integration that is enabled by the newly developed 4-Quadrant Single Die SiC Power Semiconductor Switches (4-QPS) or also referred to as “Bidirectional FET (BIDFET)”. This work includes semiconductor die development, advanced packaging, converter design, development, and testing of 4-QPS enabled hardware prototypes at 1 kW (for single phase residential application) and 10 kW (for three phase commercial application). The BiDirectional Field-Effect Transistor (BiDFET) can enable circuit topologies requiring four-quadrant switches, that were earlier designed using discrete combinations of MOSFETs, IGBTs, GaN HEMTs, and PiN diodes. The monolithic nature of the BiDFET allows lower device count, smaller switch volume, lower inductance, and simpler packaging, and hence more reliable and commercially viable implementation in power electronics converters. The matrix converter topologies, now feasible using BiDFETs, can eliminate the bulky and unreliable dc link capacitors or inductors required for conventional voltage-source or current-source converters in ac–ac and ac–dc applications. The 1.2 kV BiDFET has the potential to disrupt all the applications utilizing 1.2 kV switches, including electric vehicle (EV) drivetrain, bidirectional EV chargers, industrial motor drives, solid-state transformers, datacenter power supplies, elevator drives, dc microgrids, energy storage grid integration, solid-state breakers, etc.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2022

Application of Convolutional and Feedforward Neural Networks for Fault Detection in Particle Accelerator Power Systems

High voltage converter modulators (HVCM) provide power to the accelerating cavities of the spallation neutron source (SNS) facility. HVCM experience catastrophic failures, which increase the downtime of the SNS and reduce beam time. The faults may occur due to different reasons including failures of the resonant capacitor, core saturation due to the magnetic flux, insulated-gate bipolar transistor (IGBT) failures, and others. We recently have setup a HVCM test stand to develop and test machine learning models for anomaly detection and fault prognostics. In this work, we propose binary classifiers and autoencoder architectures based on convolutional (CNN) and feedforward neural networks (FNN) to facilitate distinguishing normal from faulty waveforms coming from the HVCM during operation. The results indicate that the CNN binary classifier is the best model among the four showing very stable performance in the training and testing sets with impressive metrics of precision and recall reaching up to 99\% with a very small uncertainty. The FNN classifier shows the least performance with a large uncertainty in its metrics. The performances of the two autoencoders based on CNN and FNN were in between, showing very good performance nonetheless.

Radaideh, Majdi↗
NASA NTRS1991

Silicon device performance measurements to support temperature range enhancement

The results of the NPN bipolar transistor (BJT) (2N6023) breakdown voltage measurements were analyzed. Switching measurements were made on the NPN BJT, the insulated gate bipolar transistor (IGBT) (TA9796) and the N-channel metal oxide semiconductor field effect transistor (MOSFET) (RFH75N05E). Efforts were also made to build a H-bridge inverter. Also discussed are the plans that have been made to do life testing on the devices, to build an inductive switching test circuit and to build a dc/dc switched mode converter.

Johnson, R. Wayne↗
NASA NTRS1992

Silicon device performance measurements to support temperature range enhancement

Characterization results of a MOS controlled thyristor (MCTA60P60) are presented. This device is rated for 60A and for an anode to cathode voltage of -600 V. As discussed in the last report, the MCT failed during 500 V leakage tests at 200 C. In contrast to the BJT (bipolar junction transistor), MOSFET, and IGBT (insulated gate bipolar transistor) devices tested, the breakdown voltage of the MCT decreases significantly with increasing temperature.

Bromstead, James↗