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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

UV‐induced degradation of high‐efficiency silicon PV modules with different cell architectures

Abstract Degradation from ultraviolet (UV) radiation has become prevalent in the front of solar cells due to the introduction of UV‐transmitting encapsulants in photovoltaic (PV) module construction. Here, we examine UV‐induced degradation (UVID) in various commercial, unencapsulated crystalline silicon cell technologies, including bifacial silicon heterojunction (HJ), interdigitated back contact (IBC), passivated emitter and rear contact (PERC), and passivated emitter rear totally diffused (PERT) solar cells. We performed UV exposure tests using UVA‐340 fluorescent lamps at 1.24 W·m −2 (at 340 nm) and 45°C through 4.02 MJ·m −2 (2000 h). Our results showed that modern cell architectures are more vulnerable to UVID, leading to a significant power decrease (−3.6% on average; −11.8% maximum) compared with the conventional aluminum back surface field (Al‐BSF) cells (<−1% on average). The power degradation is largely caused by the decrease in short‐circuit current and open‐circuit voltage. A greater power decrease is observed in bifacial cells with rear‐side exposure compared with those with front‐side exposure, indicating that the rear side is more susceptible to UV damage. Secondary ion mass spectroscopy (SIMS) confirmed an increase in hydrogen concentration near the Si/passivation interface in HJ and IBC cells after UV exposure; the excess of hydrogen could result in hydrogen‐induced degradation and subsequently cause higher recombination losses. Additionally, surface oxidation and hot‐carrier damage were identified in PERT cells. Using a spectral‐based analysis, we obtained an acceleration factor of 5× between unpackaged cells (containing a silicon nitride antireflective coating on the front) in the UV test and an encapsulated module (with the front glass and encapsulant blocking 90% of the UV at 294 nm and 353 nm, respectively) in outdoor conditions. From the analytical calculations, we show that a UV‐blocking encapsulant can reduce UV transmission in the module by an additional factor of ~50.

14 SOLAR ENERGY↗
DOE OSTI2021

Trap-Assisted Dopant Compensation Prevents Shunting in Poly-Si Passivating Interdigitated Back Contact Silicon Solar Cells

Using a trap-assisted compensation model, we explain why polycrystalline Si (poly-Si) passivating contacts are able to achieve low leakage current between the doped fingers of interdigitated back contact (IBC) monocrystalline Si solar cells despite mixing of boron and phosphorus dopants in the isolation region. The fill factor of IBC solar cells is strongly affected by the electrical isolation region between n- and p-type fingers, as this region is critical in minimizing shunting losses. During fabrication of monocrystalline Si solar cells with poly-Si passivating contacts, the intrinsic poly-Si isolation region inevitably gets contaminated with both p- and n-type dopants. Using dopant profiles measured with time-of-flight secondary ion mass spectrometry and scanning probe measurements of the isolation region, we demonstrate that despite the dopant spreading during cell processing, a well-compensated region between the doped fingers exists that prevents shunting. The trap-assisted dopant compensation mechanism significantly widens the compensated region to tens of microns, where the residual dopant densities are below the trap density. This enables a high-resistivity region, resulting in low shunt current. Using one-dimensional (1-D) finite element diode simulations, we identify the design parameters and experimental conditions under which a sufficiently resistive region can form. Furthermore, our measurements of 2-D local resistivity and work function maps across the isolation region using scanning spreading resistance microscopy and Kelvin probe force microscopy demonstrate the existence of a highly resistive, wide compensated region and confirm our proposed compensation mechanism. For our structures, this region is ~25 µm in width within a ~150 µm wide finger isolation region with nearly 3 orders of magnitude higher resistivity than the regions dominated by a single type of dopant.

14 SOLAR ENERGY↗
DOE OSTI2021

Solar cell contacts: quantifying the impact of interfacial layers on selectivity, recombination, charge transfer, and V oc

Interfacial layers (IFLs) are ubiquitous in solar cells, but their precise impact on carrier transfer rates and the relation of these rates to performance metrics and the concepts of selectivity and recombination is lacking. We report the use of a well-defined interdigitated back-contact (IBC) silicon solar cell to determine the precise role of such IFLs. We characterize the action of the common IFL spiro-OMeTAD by making it a third contact to the IBC cell. This architecture creates three solar cells within a single structure that, with numerical simulation, provide the exchange current densities (i.e., charge transfer rates) for electrons ( J 0n ) and holes ( J 0p ) and the quasi Fermi-level splitting in the absorber, which measures the balance of generation and recombination. Further, we describe the relation of V oc to contact recombination, the asymmetry in electron/hole collection rates at a single contact (contact selectivity), and the asymmetry in collection rates of the same carrier at separate contacts (carrier selectivity). Relative to bare gold, neat spiro-OMeTAD reduces J 0n and J 0p (their geometric mean ( J 0n J 0p ) 0.5 decreases by 10 4 ), decreasing contact recombination. Addition of the common dopant Li-TFSI and air increase J 0p / J 0n by 10 6 with little effect on ( J 0n J 0p ) 0.5 , increasing contact hole selectivity. The significant increase in V oc observed by introducing spiro-OMeTAD/Li-TFSI IFLs into the cells studied, however, is due to an increase in the carrier selectivity rather than the contact selectivity or recombination of the spiro-OMeTAD-modified contact. Operando measurements further show voltage-dependent changes in the J 0 s, demonstrating that spiro-OMeTAD contributes to hysteresis. Broader context : Solar cells operate by photogenerating excess charge carriers in an absorber material and, in competition with recombination, asymmetrically extracting them at so-called carrier-selective contacts, one that ideally collects only electrons and the other, only holes. Particularly in emerging photovoltaics such as perovskites, thin layers of organic semiconductors or related materials are introduced between the absorber and contact to improve power conversion efficiency. In terms of interfacial charge transfer, a prevailing view is that such interfacial layers improve performance by helping block the collection of the undesired carrier, considered a form of recombination. We use a novel platform to study the simultaneous impact of spiro-OMeTAD, a common interfacial layer, on the collection of electrons, the collection of holes, and on the recombination of electrons and holes. We quantitatively demonstrate that spiro-OMeTAD layers indeed passivate the contact toward recombination, but that larger improvements in the open-circuit voltage, a key cell metric, can come not only from this but also from increasing the asymmetry of the collection of electrons in the system. Further, operando measurements show transient changes in the properties of spiro-OMeTAD which suggest that it contributes to hysteresis phenomena commonly observed in perovskite and other solar cells.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Electroluminescence Characterization of Recombination in Back Junction Silicon Heterojunction Test Structures: Role of the Inversion Layer

Electroluminescence (EL) characterization technique is used to quantify recombination properties in back junction silicon (Si) heterojunction (HJ) solar cell test structures with interdigitated back contact (IBC) emitters and metal contacts. These test structures are three terminal devices that allow the selective biasing and injection of minority carriers into spatially isolated emitter strips having different widths. This allows the study of minority carriers' current transport, flow, and recombination in these regions, which can, then, be applied to full IBC cells. EL is used to verify that emission is proportional to the minority carriers' concentration in the corresponding regions of the device, thus providing information relevant to minority carriers' collection when compared with laser beam induced current technique in considerably less time and with a higher spatial resolution. Current transport through the inversion layer that occurs due to the band bending at the n crystalline Si and p amorphous Si interface is discussed relying on the distance that minority carriers travel in different configurations and on their diffusion length. Laser defect spots (LDS) were, then, introduced in the emitter regions to analyze the spatial profile of minority carriers as they recombine at the LDS due to their high surface recombination velocity. Ideality factors in different configurations are spatially mapped from EL before and after introducing LDS and are used to show the effect of the inversion layer on the different recombination mechanisms. Current transport through the inversion layer is studied at different biasing conditions and correlated with current transport after LDS.

42 ENGINEERING↗
DOE OSTI2020

Three-Terminal Bipolar Junction Bottom Cell as Simple as PERC: Towards Lean Tandem Cell Processing

Silicon-based tandem cells are a potential upgrade for the dominating PERC technology and can greatly increase the conversion efficiency. A novel approach, the three-terminal (3T) tandem using interdigitated back-contact (IBC) cells, was shown to combine the advantages of four- and two-terminal tandem cells at the expense of a more complex bottom cell fabrication process. In this paper, we propose a simplified and lean PERC-like 3T bipolar junction bottom cell featuring two minority-carrier selective contacts and a single majority-carrier selective contact, and thus resembling a bipolar junction transistor architecture. We present the lean PERC-like fabrication process and explain the working principle by using current-voltage measurements of illuminated 3T IBC cells.

14 SOLAR ENERGY↗
DOE OSTI2020

Plasma Electrolytic Oxidation (PEO) Coatings as Superior Thermal Barriers for Engine Pistons. Final Report

Thermal barrier coatings (TBCs) have received considerable interest in internal combustion engines, as a means to increase overall efficiency. However, despite some promising results for coatings with adequate thermal properties, durability has remained a barrier to commercialization, which has damped interest from automotive manufacturers. The PEO-based TBC developed by IBC Materials has exceptional durability, and thermal properties comparable or superior to state of the art. In this Phase I effort, IBC has demonstrated this durability by coating pistons from a current production engine (Kohler KD440) and conducting thermal shock testing on several coated pistons. Following successful thermal shock testing, a piston was run in this engine for an extended period(>120h) and showed no evidence of damage to the piston coating or engine bore. The PEO-based TBC also increased heat rejection from the combustion chamber, resulting in significantly increased exhaust temperature. Operation of the engine with PEO-based TBCs was also found to delay the onset of fuel ignition, possibly due to reduced heat retention by the piston. After slightly modifying the engine operation to counteract this effect, a modest improvement (+0.8%) to overall efficiency was achieved. With additional tuning of coating parameters and combustion timing, it is very likely that additional gains can be realized. This result also points to the possibility of future designs which require less capacity from the cooling system (e.g. a radiator), which draws energy and adds mass and complexity to an overall powertrain.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2024

Ultraviolet Laser Activation of Phosphorus-Doped Polysilicon Layers for Crystalline Silicon Solar Cells

In crystalline silicon photovoltaics (c-Si PV), a pulsed laser can be used as a substitute for a high-temperature furnace dopant diffusion/activation step. In contrast to furnace-based activation, lasers can be used to achieve highly localized doping with controlled dopant concentrations, useful in advanced architectures such as the interdigitated back contact (IBC) solar cell. In this study, a pulsed ultraviolet (UV) laser is utilized for phosphorus dopant activation within a low-pressure chemical vapor deposited (LPCVD) polycrystalline silicon (poly-Si) passivated contact layer. The highest implied open-circuit voltage iV oc values achieved using this approach reach 726 mV. However, this comes at the expense of high specific contact resistivities ρ c , which is attributed to a lower dopant concentration across the poly-Si(n + )/SiO x /c-Si interface. Regardless, the optimum iV oc , ρ c combination is measured at a laser fluence of 0.78 J cm -2 producing values of 712 mV and 89 mΩ-cm 2 , respectively. These values are still compatible with high-efficiency solar cell designs, underscoring the feasibility and effectiveness of this approach.

14 SOLAR ENERGY↗
DOE OSTI2023

Core-collapse supernovae in the Dark Energy Survey: luminosity functions and host galaxy demographics

ABSTRACT We present the luminosity functions and host galaxy properties of the Dark Energy Survey (DES) core-collapse supernova (CCSN) sample, consisting of 69 Type II and 50 Type Ibc spectroscopically and photometrically confirmed supernovae over a redshift range 0.045 < z < 0.25. We fit the observed DES griz CCSN light curves and K-correct to produce rest-frame R-band light curves. We compare the sample with lower redshift CCSN samples from Zwicky Transient Facility (ZTF) and Lick Observatory Supernova Search (LOSS). Comparing luminosity functions, the DES and ZTF samples of SNe II are brighter than that of LOSS with significances of 3.0σ and 2.5σ, respectively. While this difference could be caused by redshift evolution in the luminosity function, simpler explanations such as differing levels of host extinction remain a possibility. We find that the host galaxies of SNe II in DES are on average bluer than in ZTF, despite having consistent stellar mass distributions. We consider a number of possibilities to explain this – including galaxy evolution with redshift, selection biases in either the DES or ZTF samples, and systematic differences due to the different photometric bands available – but find that none can easily reconcile the differences in host colour between the two samples and thus its cause remains uncertain.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2020

Spatially resolved molecular gas properties of host galaxy of Type I superluminous supernova SN 2017egm

Abstract We present the results of CO(1–0) observations of the host galaxy of a Type I superluminous supernova (SLSN-I), SN 2017egm, one of the closest SLSNe-I at z = 0.03063, by using the Atacama Large Millimeter/submillimeter Array. The molecular gas mass of the host galaxy is Mgas = (4.8 ± 0.3) × 109 M⊙, placing it on the sequence of normal star-forming galaxies in an Mgas–star-formation rate (SFR) plane. The molecular hydrogen column density at the location of SN 2017egm is higher than that of the Type II SN PTF10bgl, which is also located in the same host galaxy, and those of other Type II and Ia SNe located in different galaxies, suggesting that SLSNe-I have a preference for a dense molecular gas environment. On the other hand, the column density at the location of SN 2017egm is comparable to those of Type Ibc SNe. The surface densities of molecular gas and the SFR at the location of SN 2017egm are consistent with those of spatially resolved local star-forming galaxies and follow the Schmidt–Kennicutt relation. These facts suggest that SLSNe-I can occur in environments with the same star-formation mechanism as in normal star-forming galaxies.

Hatsukade, Bunyo (ORCID:0000000164698725)↗
DOE OSTI2020

Photometric classification of Hyper Suprime-Cam transients using machine learning

Abstract The advancement of technology has resulted in a rapid increase in supernova (SN) discoveries. The Subaru/Hyper Suprime-Cam (HSC) transient survey, conducted from fall 2016 through spring 2017, yielded 1824 SN candidates. This gave rise to the need for fast type classification for spectroscopic follow-up and prompted us to develop a machine learning algorithm using a deep neural network with highway layers. This algorithm is trained by actual observed cadence and filter combinations such that we can directly input the observed data array without any interpretation. We tested our model with a dataset from the LSST classification challenge (Deep Drilling Field). Our classifier scores an area under the curve (AUC) of 0.996 for binary classification (SN Ia or non-SN Ia) and 95.3% accuracy for three-class classification (SN Ia, SN Ibc, or SN II). Application of our binary classification to HSC transient data yields an AUC score of 0.925. With two weeks of HSC data since the first detection, this classifier achieves 78.1% accuracy for binary classification, and the accuracy increases to 84.2% with the full dataset. This paper discusses the potential use of machine learning for SN type classification purposes.

Takahashi, Ichiro↗
DOE OSTI2021

Assessing UV-Induced Degradation in Bifacial Modules of Different Cell Technologies

Bifacial technology enables solar cells to offer higher power output and lower levelized cost of energy compared to their monofacial counterparts. Here, we examined the adverse effects of ultraviolet-induced degradation (UVID) on a variety of high-efficiency silicon wafer-based bifacial cell technologies, including silicon heterojunction (SHJ), interdigitated back contact (IBC), passivated emitter rear contact (PERC), and passivated emitter rear totally-diffused (PERT). Both the front and rear sides of bifacial cells without any encapsulation were exposed to an artificially accelerated UV exposure test. After 2000 h of UV irradiation, the bifacial cells exhibited greater power loss with backside exposure indicating potential sensitivity of the rear passivation to UV. The highest power degradation is observed in SHJ cells, followed by p-PERC and n-PERT cell technologies. The degradation in SHJ cells is attributed to the reduction in V oc and FF, while the degradation in p-PERC and n-PERT cells is correlated with a significant drop in I sc . This suggests that each cell type/make degrades via different degradation pathways.

bifacial cells↗
DOE OSTI2021

UV-Induced Degradation of High-Efficiency Solar Cells with Different Architectures

The ultraviolet-induced degradation (UVID) of solar panels is associated with the deterioration of cell performance and reduced reliability of packaging materials. Here we examine the UV stability of different architectures of high-efficiency solar cells without any encapsulation. Identical UV exposure tests were performed at two different labs using UVA-340 fluorescent lamps under different electrical bias configurations (open- or short-circuit) and irradiated cell surfaces (for bifacial technologies). Cell technologies, including heterojunction (HJ), interdigitated back-contact cells (IBC), passivated emitter rear contact (PERC), passivated emitter rear totally-diffused (PERT), are found to be more susceptible to UVID, leading to significant Isc loss (up to 4%) and P max loss (up to 15%) as compared to the conventional back surface field (Al-BSF) cells after exposure to UV irradiation of 8.92 MJ-m -2 -nm -1 at 340 nm. Additionally, the bifacial cells when irradiated from the backside exhibited greater photocurrent loss compared to the front side exposure, indicating potential sensitivity of rear surface passivation to UV radiation.

crystalline silicon↗
DOE OSTI2020

Impact of undoped substrates on high performance silicon solar cells

Today's highest-efficiency silicon solar cells typically operate near the threshold between low-level and high-level injection. It is not well understood if pushing further into a regime in which the cell operating point is solidly in high-level injection at all times of the day has further benefits for the solar cell performance. From a reliability perspective, cells fabricated on lower doped silicon have a larger breakdown voltage. This advantage can affect the design of modules allowing higher voltages and a relaxation of the number of bypass diodes needed. In this project, we present a comprehensive assessment, both experimental and using simulation, of how bulk resistivity, light intensity, and operation temperature impact the performance of the silicon solar cell. This work incorporates a comprehensive device physics analysis assisted by numerical simulation. The source code is now available under General Public License (GPL3), and to further leverage the findings of this project and outreach people outside of the scientific community, we are working with www.pveducation.org (which receives >1 million visitors a year) to create interactive content using our simulation results. The simulation results indicate that high bulk resistivity wafers (>>10 Ωcm) require bulk Shockley-Read-Hall (SRH) lifetimes in the millisecond range to outperform wafers with standard bulk resistivities (<10 Ωcm). Additionally, above bulk resistivities of 10 Ωcm (the exact value depends on the bulk characteristics of the wafer), the cell efficiency is weakly dependent on the bulk resistivity. As a result, ingot manufactures may have an opportunity to further reduce wafer cost by growing higher resistivity ingots that are more tolerant to resistivity variations. This project is particularly relevant today, as solar cell architectures with improved surface passivation and milliseconds lifetimes wafers are commercially available, leveraging potential benefits of using higher bulk resistivities. Outside of interdigitated back contact (IBC) cell, reported studies on high resistivity silicon (>100 Ωcm) are very limited. To the best of our knowledge, this project provides for the first-time experimental insight on solar cells fabricated on wafers with bulk resistivities up to several thousand Ωcm, delivering a comprehensive vision of their performance under real-world temperature and light intensity operation conditions. We manufactured and characterized solar cells with bulk resistivities in the range of 1 Ωcm to >15k Ωcm. Under standard testing conditions (STC), we measured solar cells efficiencies over 20% over the entire range of bulk resistivities, using our baseline cell processing. To evaluate the cell performance in real-world operation conditions, the solar cells were measured at different temperatures (25-80°C) and at different light intensities (0.1-1 suns). The measurements show that the bulk resistivity does not impact the solar cell response to temperature and light intensity. Similar thermal coefficients (TC) were measured for standard and high bulk resistivities, and they are comparable with the TC values reported in the literature for standard bulk resistivities <10 Ωcm. After light soaking, the solar cell didn’t show signs of light-induced degradation (LID). This result was expected since n-type float zone (FZ) wafers were used in this work, i.e. low traces of boron and low concentration of oxygen (oxygen is typically found in the seed end of Czochralski (CZ) ingots). We measured for high bulk resistivities (>10 Ωcm) extremely high breakdown voltages (>1000V). In conclusion, the insight provided by this project can positively impact the levelized cost of energy (LCOE) of the photovoltaic systems through its effect on cell and ingot manufacturing yield, silicon cell power output, and module reliability.

14 SOLAR ENERGY↗
DOE OSTI2022

Enabling New Approaches to Low-Cost Dopant Patterning for Interdigitated Back Contact Crystalline Silicon Solar Cells: Cooperative Research and Development, CRADA Number CRD-17-00665 (Final Report)

NREL is sub to the Department of Energy (DOE) Photovoltaic Research & Development (PVRD) project, titled "New Approaches to Low-Cost Scalable Doping for Interdigitated Back Contact Crystalline Silicon Solar Cells", awarded to Colorado School of Mines. The goal of this project was to develop an industrially relevant dopant patterning technique that enable high performing, cost efficient Interdigitated Back Contact (IBC) solar cells based on n-Cz silicon wafer. Several possibilities were explored at the beginning of the project and the masked plasma deposition was deselected as the most promising and industrially relevant. This method was thoroughly explored ion the course of the project, its limitations revealed and mitigated. NREL successfully the masked deposition integrated into the cell's process flow and produced the cells, alongside with numerous process development steps and application of in-house advanced characterization techniques. The report describes these developments by the task and in detail.

14 SOLAR ENERGY↗
DOE OSTI2022

Reducing Uncertainty of Fielded Photovoltaic Performance (Final Technical Report)

Improved analysis and reporting of photovoltaic (PV) field performance increases the certainty of owners and financiers that systems will perform as expected. Advanced module technologies (e.g., PERC, HJT, and bifacial) introduce new degradation mechanisms and performance characteristics. The FY19-21 Reducing Uncertainty project leveraged data from the ever-increasing PV fleet to develop models and understanding of the field performance of existing and new technologies. Specifically, we accomplished: report on field performance and degradation rates for high-efficiency silicon (HJT, PERC, IBC) and more conventional technologies; developed automated analysis techniques to quantify system performance (performance ratio, energy yield) and production shortfalls (soiling, degradation, availability); refined the RdTools software toolkit to bring standard, validated analysis techniques to bear on third-party data; analyzed and reported on large datasets including Treasury data and Lawrence Berkeley National Laboratory's Utility-Scale dataset to expand the high-quality degradation-rate histogram published previously; worked with industry partners and the DuraMAT data hub to enable private parties to share and aggregate PV production data anonymously, leveraging cloud-based data analysis infrastructure and publishing on US fleet-scale performance comprising over 7GW of operating systems. (https://www.nrel.gov/pv/fleet-performance-data-initiative.html). Through our industry collaborations we have engaged in NDA-covered data transfer with twelve PV fleet owners as of January 2022, with more agreements in negotiation. Our scalable cloud-based time series database contains over 30 billion rows (20TB) of PV time series data, representing over 1700 commercial and utility-scale systems, and over 7.2 GW of DC capacity (Fig 1). Initial field performance results have been distributed in several public reports. Because our fleet composition and data quality methods are continually improving, annual updates to these results are published to our PV Fleet webpage [ https://www.nrel.gov/pv/fleet-performance-data-initiative.html ] and DuraMAT data hub [DOI: 10.21948/1842958]. Another existing dissemination channel used for observed soiling losses is a map we maintain for soiling losses. Additional products developed include a report detailing fleet-wide performance index, availability, startup loss and snow loss factors, a detailed report on the 1603 grant dataset comprising over 100,000 PV systems with failure and performance details and a utility-scale report coauthored with LBNL on 31 GW of system performance.

14 SOLAR ENERGY↗
DOE OSTI2022

Production of CO2-Negative Building Composites Development

This project will investigate and utilize the basicity and enhanced reactivity of CO2 chemically captured in PNNL’s CO2BOLs carbon capture solvents to perform the first direct carboxylation of the aromatic rings (substituted phenols) in lignin and lignite. This project aims to develop a deep decarbonization approach that can sequester millions of tonnes of CO2 annually by reacting with two large-volume products, lignin, and lignite, to enable their use as composite fillers. The goal is to demonstrate that CO2-containing composites have comparable properties to conventional synthetic materials, meeting international building codes (IBC) while being able to sequester millions of tonnes of CO2 per year.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

ECAR-6601 MARVEL Project Seismic Accelerations

The MARVEL reactor design requirements are currently listed within TFR-2576. Several MARVEL subsystems are required to be designed to seismic criteria of IBC 2015. This Engineering Analysis (EA) report documents the accelerations that need to be used in an equivalent-static method seismic analysis to satisfy this requirement.

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗
DOE OSTI2021

Shotgun Immunoproteomic Approach for the Discovery of Linear B-Cell Epitopes in Biothreat Agents Francisella tularensis and Burkholderia pseudomallei

Peptide-based subunit vaccines are coming to the forefront of current vaccine approaches, with safety and cost-effective production among their top advantages. Peptide vaccine formulations consist of multiple synthetic linear epitopes that together trigger desired immune responses that can result in robust immune memory. The advantages of linear compared to conformational epitopes are their simple structure, ease of synthesis, and ability to stimulate immune responses by means that do not require complex 3D conformation. Prediction of linear epitopes through use of computational tools is fast and cost-effective, but typically of low accuracy, necessitating extensive experimentation to verify results. On the other hand, identification of linear epitopes through experimental screening has been an inefficient process that requires thorough characterization of previously identified full-length protein antigens, or laborious techniques involving genetic manipulation of organisms. In this study, we apply a newly developed generalizable screening method that enables efficient identification of B-cell epitopes in the proteomes of pathogenic bacteria. As a test case, we used this method to identify epitopes in the proteome of Francisella tularensis (Ft), a Select Agent with a well-characterized immunoproteome. Our screen identified many peptides that map to known antigens, including verified and predicted outer membrane proteins and extracellular proteins, validating the utility of this approach. We then used the method to identify seroreactive peptides in the less characterized immunoproteome of Select Agent Burkholderia pseudomallei (Bp). This screen revealed known Bp antigens as well as proteins that have not been previously identified as antigens. Although B-cell epitope prediction tools Bepipred 2.0 and iBCE-EL classified many of our seroreactive peptides as epitopes, they did not score them significantly higher than the non-reactive tryptic peptides in our study, nor did they assign higher scores to seroreactive peptides from known Ft or Bp antigens, highlighting the need for experimental data instead of relying on computational epitope predictions alone. The present workflow is easily adaptable to detecting peptide targets relevant to the immune systems of other mammalian species, including humans (depending upon the availability of convalescent sera from patients), and could aid in accelerating the discovery of B-cell epitopes and development of vaccines to counter emerging biological threats.

60 APPLIED LIFE SCIENCES↗