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DOE OSTI2025

Impact of proton irradiation on 4H-SiC Low Gain Avalanche Detectors (LGADs)

Silicon carbide (SiC) particle detectors have the potential to provide time resolutions and robust performance in extreme environments which exceed that of silicon detectors. In this work 4H-SiC low gain avalanche detectors (LGADs) and complementary PiN diodes were irradiated with 2.5 GeV protons at fluences up to 3.33 × 10 14 p/cm 2 . The electrostatic performance of both irradiated and non-irradiated devices was evaluated using I-V and C-V measurements. Moreover, charge collection measurements using α particles were also conducted. SiC LGADs displayed a loss in rectification, high ON-state resistances >10 10 Ω-cm 2 , and the complete removal of gain when exposed to the highest proton fluence. Additionally, the reductions in capacitance and OFF-state current pointed to compensation of the gain layer as a gain reducing mechanism. The introduction of radiation-induced defects also hinders carrier acceleration, which reduces impact ionization and further gain reduction. LGADs exposed to a fluence of 1 × 10 14 p/cm 2 experienced a partial recovery in gain (originally having a value of ∼ 2) with a value of ∼ 1.65 when applying a bias of 500 V. Charge trapping was also seen in the reduction of charge collection efficiency (CCE) to ∼ 65% for the PiN diode. However, despite the reduction in device performance, the demonstration of a measurable signal after irradiation points to the potential of SiC LGAD detectors for future high energy physics applications.

43 PARTICLE ACCELERATORS↗

DOE OSTI2024

Nonreciprocal Coulomb drag between quantum wires in the quasi-one-dimensional regime

Coulomb drag experiments have been an essential tool to study strongly interacting low-dimensional systems. Historically, this effect has been explained in terms of momentum transfer between electrons in the active and the passive layer. We report Coulomb drag measurements between laterally coupled GaAs/AlGaAs quantum wires in the multiple one-dimensional (1D) sub-band regime that break Onsager's reciprocity upon both layer and current direction reversal, in contrast to prior 1D Coulomb drag results. The drag signal shows nonlinear current-voltage (I-V) characteristics, which are well characterized by a third-order polynomial fit. These findings are qualitatively consistent with a rectified drag signal induced by charge fluctuations. However, the nonmonotonic temperature dependence of this drag signal suggests that strong electron-electron interactions, expected within the Tomonaga-Luttinger liquid framework, remain important and standard interaction models are insufficient to capture the qualitative nature of rectified 1D Coulomb drag.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2024

Autonomous Electrochemistry Platform with Real-Time Normality Testing of Voltammetry Measurements Using ML

Electrochemistry workflows utilize various instruments and computing systems to execute workflows consisting of electrocatalyst synthesis, testing and evaluation tasks. The heterogeneity of the software and hardware of these ecosystems makes it challenging to orchestrate a complete workflow from production to characterization by automating its tasks. We propose an autonomous electrochemistry computing platform for a multi-site ecosystem that provides the services for remote experiment steering, real-time measurement transfer, and AI/ML-driven analytics. We describe the integration of a mobile robot and synthesis workstation into the ecosystem by developing custom hub-networks and software modules to support remote operations over the ecosystem’s wireless and wired networks. We describe a workflow task for generating I-V voltammetry measurements using a potentiostat, and a machine learning framework to ensure their normality by detecting abnormal conditions such as disconnected electrodes. We study a number of machine learning methods for the underlying detection problem, including smooth, non-smooth, structural and statistical methods, and their fusers. We present experimental results to illustrate the effectiveness of this platform, and also validate the proposed ML method by deriving its rigorous generalization equations.

Alnajjar, Anees↗

DOE OSTI2026

Different Damp-Heat-Induced Series Resistance Degradation Behaviors in Fielded Crystalline Silicon Photovoltaic Modules Due to Difference in Bill of Materials

This case study investigates mono-crystalline silicon modules from underperforming portions of a utility-scale photovoltaic power plant. Field-collected I-V curves and electroluminescence imaging suggested that increased series resistance was a primary factor driving module degradation. Selected modules were removed from the field for further analysis, including incremental damp heat accelerated testing, which confirmed a progression in series resistance degradation. Two distinct cell degradation behaviors became apparent during the investigation. Cross-sectional scanning electron microscopy (with elemental analysis) and scanning spreading resistance microscopy identified key differences between the two degradation mechanisms, primarily grid finger width and contact resistance. Additionally, the study highlights the reliability implications of retest requirements in International Electrotechnical Commission 61215 for material changes and how they may have mitigated the degradation observed at this site.

14 SOLAR ENERGY↗

DOE OSTI2024

Study of electro-physical properties of CsPbBr3 perovskite single crystals

Methods have been developed for the synthesis and growth of lead halide perovskites CsPbBr3, which can be used as detectors of optical, X-ray and gamma-radiation. Single crystals of these compounds were grown by the Bridgman method. The melt temperature was 580 °C, the gradient at the crystallization front was 5 K/cm, and the ampoule lowering speed was 3 mm/hour. In this work, the electro-physical properties of the inorganic perovskite CsPbBr3 were investigated. Crystals for research were cut from the beginning and end of the ingot. The optical absorption spectra were measured depending on the crystal thickness and temperature, the differential resistivity dif and the product  were determined from the I-V characteristics. It was established that dif practically does not change for samples made from the beginning and the end of the ingot, and is dif  21010 Ωcm at 100 V and 293 K.

Sklyarchuk, V.↗

DOE OSTI2024

In-Situ Luminescence Imaging of Perovskite Solar Cells Demonstrates Increasing Spatial Nonuniformity Upon Light-Soaking Degradation

In this work we investigate degradation rates of triplecation mixed-halide perovskite p-i-n solar cells. We present an accelerated stress testing procedure using periodic blue light-soaking at elevated temperatures until devices reach ~80% of their initial efficiency. We track light-induced degradation via in-situ: photoluminescence (PL), current-voltage (I-V) curves, and transient photovoltage. Devices underwent 165 hours of light bias at 65degrees C. Results suggest that spatial uniformity in PL intensity decreases as device degradation increases. This investigation lays the groundwork to address the current gap in understanding the interplay between device performance and the evolution of macroscopic features in perovskite solar cells. Thus, we believe spatial characterization techniques will play a crucial role in the commercialization of perovskite solar cells.

imaging↗

DOE OSTI2024

Diagnosis of PV Cell Passivation Degradation Resulting from Hot-Humid, High Voltage Potential Aging

Corrosion of the antireflective coating on the cell ("AR c corrosion") was previously observed in studies using hot-humid test conditions with external high voltage (HV) bias. Because AR c corrosion is not well understood, mini-modules (MiMos) were examined in a comparative experiment using PERC and PERT as well as legacy Al-BSF cells. For separate MiMos with the cell circuit electrical at +1500 V, -1500 V, or unbiased "V oc", test conditions in the comparative study included 60degrees C/60% RH for 96 h, as in IEC TS 62804-1; 70degrees C/70%RH for 200 h; and 85degrees C/85% RH for 200 h. Characterizations at each read point included: camera and electroluminescence (EL) imaging, colorimetry, and I-V curve tracing. Characterizations at the final read point included: SunsVoc; spatially mapping external quantum efficiency (EQE); high resolution: photoluminescence (PL), EL, and dark lock-in thermographic (DLIT) imaging. Forensics were performed on extracted cores, including scanning electron microscopy (SEM) with energy-dispersive X-ray spectroscopy (EDS) and scanning Auger microscopy (SAM). Forensics were also conducted on MiMos (stepped HV aging) and full-sized modules (outdoor aging) from previous studies. AR c corrosion was specifically observed for the glass/encapsulant/cell side of +1500 V (HV+) stressed MiMos, where appearance, color, and reflectance were the characteristics most distinguished relative to simultaneously occurring degradation modes. SEM/EDS and SAM identified conversion of silicon nitride to silicon oxide or hydrous silica, preferentially occurring at the edges and tips of the pyramidal textured cell surface.

aging↗

DOE OSTI2025

Neuromorphic ionic computing in droplet interface synapses

Ionic devices with memory capabilities can emulate neural functionality, enabling neuromorphic computing and biomedical applications. In this study, we report an ionic spiking synapse based on aqueous droplet interface bilayer assembly. Under stepwise triangular voltages, the device displays coupled memcapacitive-memristive behavior, showing noncrossing pinched hysteretic I-V loops. This hysteretic ion dynamics can be regulated by modifying bilayer components, reconstituting protein channels, or adjusting droplet assembly configuration. Droplet interface synapses (DIS) exhibit fundamental neuromorphic behaviors such as paired-pulse facilitation/depression, spike rate–dependent plasticity, Hebbian learning, and short-term associative learning under classical conditioning. We also used reservoir computing with DIS to implement two learning algorithms: a classification algorithm that recognizes handwritten digits and a reinforcement learning algorithm that learns to play a board game of tic-tac-toe.

Li, Zhongwu [Lawrence Livermore National Laborator↗

DOE OSTI2023

Cross-Facility Orchestration of Electrochemistry Experiments and Computations

Instrument-computing ecosystems supporting automated electrochemical workflows typically require the integration of disparate instruments such as syringe pump, fraction collector, and potentiostat, all connected to an electrochemical cell. These specialized instruments with custom software and interfaces are not typically designed for network integration and remote automation. We developed a networked ecosystem of these instruments and computing platforms, which includes software to enable automated workflow orchestration from remote computers. Specifically, we developed Python wrappers of APIs and custom Pyro client-server modules to support remote operation of these instruments over the ecosystem network. Herein, we describe a specific workflow for generating and validating voltammogram (I-V) measurements of an electrolyte solution pumped into the electrochemical cell. We demonstrate the orchestration of this workflow which is composed using a Jupyter notebook and executed on a remote computer.

Al Najjar, Anees↗

DOE OSTI2024

Spectral Efficiency and Tandem Performance Calculators [SWR-24-92]

The Spectral Efficiency and Tandem Performance Calculators allow users to test material types for use in tandem photovoltaic devices to better understand if a given material could work well. The Spectral Efficiency (SE) calculator takes a set of current vs voltage (I-V) and quantum efficiency (QE) data along with a spectrum input and plots the spectral efficiency of the cells represented by the datasets for the spectrum provided. The Tandem Performance calculator uses the calculated spectral efficiency of top and bottom cells and the transmission data of the top cell to calculate performance metrics for a tandem device in either a two or four terminal architecture. The SE and Tandem Performance calculators are based on the following publication: Yu, Z., Leilaeioun, M. & Holman, Z. Selecting tandem partners for silicon solar cells. Nat Energy 1, 16137 (2016).

Warren, Emily↗

DOE OSTI2026

Cholla Galactic OutfLow Simulations (CGOLS)

These datasets contain full hydro-field snapshots from the galactic outflow simulations in the CGOLS suite, models I-V. The datasets were generated using the Cholla hydrodynamics code (https://github.com/cholla-hydro/cholla); descriptions of the models are in the associated publications (Schneider & Robertson 2018, ApJ; Schneider et al. 2018, ApJ; Schneider et al. 2020, ApJ; and Schneider & Mao, 2024, ApJ). Each hdf5 dataset is numbered according to the simulation time of the snapshot, in Myr. Fields include density, x momentum, y momentum, z momentum, total energy, and thermal energy (for models I - III), as well as a passive scalar field (models IV and V). 2 dimensional density and temperature projections, as well as slices along each midplane are also included if they exist.

79 ASTRONOMY AND ASTROPHYSICS↗

DOE OSTI2024

Roles of temperature, materials, and domain inversion in high-performance, low-bias-drift thin film lithium niobate blue light modulators

We demonstrate a thin film lithium niobate electro-optic modulator operating at 456 nm with an RF voltage-length product of 0.38 V-cm and a bandwidth of 6.9 GHz. We test the dielectric relaxation of the modulator with sweeps of temperature and optical input power, and compare equivalent modulators with electrode materials of Cr-Au, Ti-Au and Al in terms of bias stability and current-voltage characteristics. We demonstrate bias stability over at least 8 hours with Al devices, and show relationships between drift, I-V characteristics and ferroelectric domain switching.

Celik, Oguz Tolga (ORCID:0000000264542306)↗

DOE OSTI2023

Nanoscale Ferroelectric Control of Novel Electronic States in Layered Two-Dimensional Materials (Final Report)

In this DOE Early Career project “Nanoscale Ferroelectric Control of Novel Electronic States in Layered Two-Dimensional Materials,” the PI’s group has combined ferroelectric field effect with nanoscale domain imaging and writing to design the electronic and optical properties of two-dimensional (2D) van der Waals materials, including graphene and transition metal dichalcogenides MoS2 and ReS2. The van der Waals materials have been prepared into field effect transistor (FET) devices with ferroelectric gates. Through domain patterning in a ferroelectric polymer PVDF-TrEF top-gate via conductive atomic force microscopy, the team has created programmable Schottky junctions in monolayer MoS 2 , where both barrier height and I-V rectifying polarity can be reconfigured. The transport anisotropy of monolayer to few-layer ReS 2 has been mapped out by defining the entire channel into an insulating state and creating nanoscale conducting paths along different directions through domain writing in the ferroelectric top-gate. The result shows that the conductivity along and perpendicular to the Re-chain can differ by >5.5x10 4 . Theoretical modeling points to the band origin of the transport anomaly and reveals the emergence of a flat band in few-layer ReS 2 . The interfacial epitaxial relation between ReS 2 and PVDF-TrFE further promotes the formation of close-packed, highly ordered PVDF-TrFE nanowires with width of 35 nm and 10 nm. Nonvolatile modulation of quantum Hall effect has been achieved in graphene FETs with a ferroelectric oxide Ba 0.4 Sr 0.6 TiO 3 back-gate. Scattering from the remote surface optical phonon in Ba 0.4 Sr 0.6 TiO 3 limits the room temperature mobility of graphene to be about 3x10 4 cm 2 /Vs. Steep-slope switching has been achieved in MoS 2 FETs back-gated by polycrystalline Pb(Zr,Ti)O 3 , which signals a static-state negative capacitance mode without involving an additional dielectric layer. Piezoresponse force microscopy studies show that the sub-threshold swing can be well correlated with the domain wall density in Pb(Zr,Ti)O 3 . The team also observes an unconventional filtering effect of the second harmonic generation response at the MoS 2 /Pb(Zr,Ti)O 3 heterointerface, which can be accounted for by the alignment between one of the polar axes of MoS 2 and the chiral dipole rotation at the surface of domain wall in Pb(Zr,Ti)O 3 . The research supported by this DOE grant has significantly advanced the fundamental understanding and functional design of ferroelectric/2D van der Waals heterostructures for their implementation towards energy applications.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Study of Cathode and Cavity Geometries in Electropolishing (EP): Electric Field Simulation

Niobium (Nb) superconducting radio frequency (SRF) cavities require electropolishing surface treatment to reach high acceleration gradient. EP performed in the plateau region of an I-V curve [1] leads to a smooth finish of the cavity surface including the equator surface. The equator surface is vital because a rough equator surface leads to premature quench and limit the cavity performance. Previous experimental work was performed to optimize EP parameters for low-beta (LB) 650 MHz Nb cavity [1]. It was found that different cathode surface areas vary the plateau onset voltage. A lower onset voltage was achieved for HB650 cavity with an enlarged cathode surface area. The aim of the study is to perform electrostatic and electrochemical simulation to understand the impact of both cavity geometry and cathodes. This report covers an initial result on electric field simulation performed with HB and LB 650 MHz cavities.

Loer, Bereket↗

DOE OSTI2024

Physical Mechanisms and Electric-Bias Control of Phase Transitions in Quasi-2D Charge-Density-Wave Quantum Materials

The goals of this fundamental science project, aimed at understanding the physical mechanisms and developing methods for electric-bias control of phase transitions in quasi-2D CDW materials, have been achieved. We focused on 1T-TaS2, one of the most interesting materials of this type, and demonstrated electrical gating of the I-V characteristics and hysteresis in this material. The demonstration of electrical gating of CDW phases in quasi-2D material was performed at RT. We have conducted experiments to separate the electric-field CDW switching from Joule heating-induced switching. This was an important development for 2D CDW materials. The project has led to a better understanding of the physical mechanisms behind the phase transitions and CDW depinning in quasi-2D van der Waals materials. We established that the CDW domain depinning in 1T-TaS2 does not lead to a strong increase in the collective current and accompanying narrow-band noise. We developed a technique that utilized the low-frequency noise measurements in such materials for monitoring the CDW phase transitions. In the experiments where 1T-TaS2 flakes were used in polymeric matrices, we verified the robustness of the phase transitions between the nearly commensurate and incommensurate CDW phases.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Diagnosis of PV Cell Antireflective Coating Degradation Resulting from Hot-Humid, High Voltage Potential Aging

Corrosion of the antireflective coating on a photovoltaic cell ("ARc corrosion") has previously been observed in studies using hot-humid test conditions with external high-voltage (HV) bias. This study primarily focuses on known vulnerable, legacy aluminum back surface field (Al-BSF) cells in mini-modules (MiMos) put through comparative stepped stress tests. Each cell type had MiMos at +1500 V, -1500 V, or unbiased ("Voc") potential, which were sequentially subjected to test conditions of 60deg C/60% relative humidity (RH) for 96 h, as in International Electrotechnical Commission (IEC) Technical Specification 62804-1; 70 deg C/70% RH for 200 h; and 85 deg C/85% RH for 200 h. Characterizations at each step included visual camera and electroluminescence (EL) imaging, colorimetry, and current-voltage (I-V) curve tracing. Final characterizations included: Suns-Voc; spatial mapping of external quantum efficiency (EQE); high-resolution photoluminescence (PL), EL, and dark lock-in thermography (DLIT) imaging. Forensics were performed on extracted cores, including scanning electron microscopy (SEM) with energy-dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), and scanning Auger microscopy (SAM). Forensics were also conducted on MiMos from previous studies that underwent stepped HV aging and separate outdoor aged full-sized modules. ARc corrosion was specifically seen for the glass/encapsulant/cell side of the +1500V (HV+) stressed MiMos and modules. Appearance, color, and reflectance were the most distinguishing characteristics relative to glass corrosion, gridline-corrosion and -delamination as well as other concurrent degradation modes. SEM/EDS and SAM identified conversion of silicon nitride to hydrated silica, hydrous silica, or hydrated amorphous silica, which preferentially occurred at the edges and tips of the pyramidal textured cell surface.

14 SOLAR ENERGY↗

DOE OSTI2025

Fabrication of 4H-SiC Low Gain Avalanche Detectors (LGADs)

Low gain avalanche detectors (LGADs) offer high temporal resolution for high energy particle detection, which is critical for next generation experiments in hadron colliders. While silicon LGADs (Si-LGADs) have rapidly matured in the last decade, research into silicon carbide (SiC) LGADs has only recently begun. By accounting for fundamental differences in material properties and fabrication processes, we present a prototype device design and process flow for 4H-SiC LGADs with etch-based isolation. Critical steps of the process flow and their results are discussed, including plasma etching, passivation, and the formation of low resistivity contacts. Electrical characterization (I-V, C-V) shows sufficient depletion of the device structure to demonstrate low-gain charge carrier multiplication.

High Energy Physics↗

DOE OSTI2025

Field Testing of PID-p Susceptible Bifacial PERC Modules: Impact of Light, Voltage and Module History

This work investigates the potential induced degradation-polarization (PID-p) of bifacial passivated emitter and rear contact (PERC) modules installed in the field at the Florida Solar Energy Center. 22 modules were stressed over 1 year under various voltage (-1500V, -3500, +1500V) and mounting configurations (close to ground, 2 meters from ground, close to roof). The positively stressed modules were anticipated to have experiences PID-p on their front side. However, no degradation was observed, as the light-induced recovery effect effectively counteracted the degradation. The negatively stressed modules experienced Pmax drops during 2 weeks before stabilizing at 5-6% loss. I-V and EL characteristics suggest a PID-p degradation on the rear side. Lower degradation rates are observed with lower voltage and when the mounting configuration allows more albedo light on the rear side to compensate for the degradation. PID-p is observed to stabilize at similar level for the voltage and mounting configuration tested with slightly lower Pmax in winter. EL imaging reveals that cells are not degrading at the same rate across a module. Some cells get darker and then brighter which corresponds to the silicon/passivation interface going through depletion and then inversion when enough positive charges are accumulated. After full light-recovery, the modules were tested again along with 22 brand-new ones to assess the impact of the module history. Results confirmed the trends observed in the first year with PID-p occurring at voltage as low as -600V and recovered modules degrading faster than brand-new ones.

14 SOLAR ENERGY↗