Stimulus induced strain in spin transition heterostructures
Explore the source record for details and available documents.
99 GENERAL AND MISCELLANEOUS↗
SEARCH · Engineering Papers
Results for “Heterostructure”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Controlling Nanoparticle Orientations in the Self-Assembly of ‘Patchy’ Quantum Dot-Gold Heterostructural Nanocrystals
Self-assembly of nanocrystals is a promising route for creating macroscale materials that derive function from the properties of their nanoscale building blocks. While much progress has been made assembling nanocrystals into different superlattices, controlling the relative orientations of nanocrystals in those lattices remains a challenge. Here, we combine experiments with computer simulations to study the self-assembly of patchy heterostructural nanocrystals (HNCs), consisting of near-spherical quantum dots decorated with regular arrangements of small gold satellites, into close-packed superlattices with pronounced orientational alignment of HNCs. Our simulations indicate that the orientational alignment is caused by van der Waals interactions between gold patches and is sensitive to the interparticle distance in the superlattice. We demonstrate experimentally that the degree and type of orientational alignment can be controlled by changing ligand populations on HNCs. This study provides guidance for the design and fabrication of nanocrystal superlattices with enhanced structural control.
ZHu, Hua↗
Crystalline materials for quantum computing: Semiconductor heterostructures and topological insulators exemplars
Abstract High-purity crystalline solid-state materials play an essential role in various technologies for quantum information processing, from qubits based on spins to topological states. New and improved crystalline materials emerge each year and continue to drive new results in experimental quantum science. This article summarizes the opportunities for a selected class of crystalline materials for qubit technologies based on spins and topological states and the challenges associated with their fabrication. We start by describing semiconductor heterostructures for spin qubits in gate-defined quantum dots and benchmark GaAs, Si, and Ge, the three platforms that demonstrated two-qubit logic. We then examine novel topologically nontrivial materials and structures that might be incorporated into superconducting devices to create topological qubits. We review topological insulator thin films and move onto topological crystalline materials, such as PbSnTe, and its integration with Josephson junctions. We discuss advances in novel and specialized fabrication and characterization techniques to enable these. We conclude by identifying the most promising directions where advances in these material systems will enable progress in qubit technology.
Scappucci, G. (ORCID:0000000325120079)↗
Machine Learning Applied to a Variable Charge Atomistic Model for Cu/Hf Binary Alloy Oxide Heterostructures [Machine Learning a Variable Charge Atomistic Model for Cu/Hf Binary Alloy Oxide Heterostructures]
Alloy oxide heterostructures are essential for a wide variety of energy applications, including anticorrosion coatings, bifunctional catalysis, energy storage, as well as emerging platforms for multilevel nonvolatile memory and neuromorphic devices. The key role played by oxide composition, density, and stoichiometry in governing electrochemical reactions, interface structure, and ionic transport in alloy oxides remains largely unknown. This is primarily due to the lack of variable charge interatomic potential models that can adequately describe the various atomic/ionic interactions in alloy oxides within a unified framework. Here, we introduce a charge transfer ionic potential (CTIP) model for Cu/Hf/O alloy system and demonstrate its ability to accurately capture the complex potential energy surface owing to dynamically varying interactions, including metallic (Cu/Hf), ionic (Cu/Hf/Ox), mixed environment (interfaces). We leverage supervised machine learning methods powered by genetic algorithms coupled with local simplex optimization to efficiently navigate through a high-dimensional parameter space and identify an optimum set of an independent set of CTIP parameters. We train our model against an extensive first-principles based data set that includes lattice constants, cohesive energies, equations of state, and elastic constants of various experimentally observed polymorphs of hafnia, copper oxide, hafnium, as well as copper. Our machine-learned CTIP model captures the structure, elastic properties, thermodynamics, and energetic ordering of various polymorphs. It also accurately predicts the surface properties of both oxides and their metals. To demonstrate the suitability of our CTIP model for investigating dynamic processes, we employed it to identify the atomistic scale mechanisms associated with the initial nanoscale oxidation and surface oxide growth on Cu-doped hafnia surfaces. Here, our machine-learned CTIP model can be used to probe the dynamic response of Cu/Hf/O alloy interfaces subjected to external stimuli (e.g., electric field, pressure, temperature, strain, etc.) and a variety of atomistic phenomena including the dynamics of switching in emerging neuromorphic platforms.
36 MATERIALS SCIENCE↗
Clar’s Goblet on Graphene: Field-Modulated Charge Transfer in a Hydrocarbon Heterostructure
In certain configurations, the aromatic properties of benzene ring structured molecules allow for unpaired, reactive valence electrons (known as radicals). Clar’s goblets are such molecules. With an even number of unpaired radicals, these nanographenes are topologically frustrated hydrocarbons in which π-bonding network and topology of edges give rise to the magnetism. Clar’s goblets are therefore valued as prospective qubits provided they can be modulated between magnetic states. Here, using first-principles DFT, we demonstrate the effects of adsorption on both molecule and substrate in a graphene–Clar’s goblet heterostructure. We look at the energy difference bewteen FM and AFM states of the system and discuss underlying physical and chemical mechanisms in reference to the highest occupied molecular orbital (HOMO) and second HOMO (HOMO–1). We find that the HOMO of the molecule in the FM state is right at the Fermi surface, which leads to the hybridization between molecular state and the graphene state near the Dirac point. Furthermore, we investigate qualitative changes in charge realignment and magnetic state under a variable electric field. Transitions from FM to AFM and back to FM states are observed.
Bruce, Adam V.↗
Emergence of the Vortex State in Confined Ferroelectric Heterostructures
Abstract not provided
Hsu, Shang-Lin↗
Observation of Quantum Anomalous Hall Effect and Exchange Interaction in Topological Insulator/Antiferromagnet Heterostructure
Integration of a quantum anomalous Hall insulator with a magnetically ordered material provides an additional degree of freedom through which the resulting exotic quantum states can be controlled. Here, an experimental observation is reported of the quantum anomalous Hall e?ect in a magnet-ically-doped topological insulator grown on the antiferromagnetic insulator Cr?O?. The exchange coupling between the two materials is investigated using ?eld-cooling-dependent magnetometry and polarized neutron re?ec-tometry. Both techniques reveal strong interfacial interaction between the antiferromagnetic order of the Cr?O? and the magnetic topological insulator, manifested as an exchange bias when the sample is ?eld-cooled under an out-of-plane magnetic ?eld, and an exchange spring-like magnetic depth pro?le when the system is magnetized within the ?lm plane. These results identify antiferromagnetic insulators as suitable candidates for the manipula-tion of magnetic and topological order in topological insulator ?lms.
Pan, Lei↗
Investigation of spin orbit torque driven dynamics in ferromagnetic heterostructures
Not provided.
Materials Science↗
Mercury Chalcogenide Nanoplatelet–Quantum Dot Heterostructures as a New Class of Continuously Tunable Bright Shortwave Infrared Emitters
Despite broad applications in imaging, energy conversion, and telecommunications, few nanoscale moieties emit light efficiently in the shortwave infrared (SWIR, 1000–2000 nm or 1.24–0.62 eV). We report quantum-confined mercury chalcogenide (HgX, where X = Se or Te) nanoplatelets (NPLs) can be induced to emit bright (QY > 30%) and tunable (900–1500+ nm) infrared emission from attached quantum dot (QD) “defect” states. Here, we demonstrate near unity energy transfer from NPL to these QDs, which completely quench NPL emission and emit with a high QY through the SWIR. This QD defect emission is kinetically tunable, enabling controlled midgap emission from NPLs. Spectrally resolved photoluminescence demonstrates energy-dependent lifetimes, with radiative rates 10–20 times faster than those of their PbX analogues in the same spectral window. Coupled with their high quantum yield, midgap emission HgX dots on HgX NPLs provide a potential platform for novel optoelectronics in the SWIR.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Highly Contrasting Static Charging and Bias Stress Effects in Pentacene Transistors with Polystyrene Heterostructures Incorporating Oxidizable N , N '-Bis(4-methoxyphenyl)aniline Side Chains as Gate Dielectrics
Charge storage and trapping properties of polymer dielectrics govern the charge densities of adjacent semiconductors and greatly influence the on-off switching voltage (threshold voltage, V th ) of organic field-effect transistors (OFETs) when the polymers are used as gate insulators. Intentional charging of polymer dielectrics in OFETs can change V th and affect the bias stress. We describe a chemical design and fabrication protocol to construct multilayer-stack dielectrics for pentacene-based OFETs using different polystyrene (PS)-based polymers in each layer, with oxidizable N,N-bis(4-methoxyphenyl)anilino (TPAOMe)-substituted styrene copolymers in arbitrary vertical positions in the stacks. Thermal, byproduct-free crosslinking of benzocyclobutene subunits provides integrity to the multilayer structure by preventing dissolution of the previous deposited layer. Neutron reflectivity data verified the multilayer morphology. We compared the Vth shift before and after charging the stacks by application of ±100V across 0.5-1 µm total film thicknesses. Bias stress was the dominant effect in bilayer devices with a TPAOMe layer in contact with the pentacene, indicated by the direction of V th shift associated with either polarity of external electric field. In structures with no TPAOMe subunit in contact with the pentacene, when charging with -100V on top of the source and drain electrodes, electron injection from pentacene to dielectric was the major charging mechanism, again consistent with the bias stress direction. When charging with +100V, bilayer devices without TPAOMe showed little change in V th , suggesting there was no bias stress effect or charge injection in these devices for this charging polarity. For the bilayer devices with the TPAOMe layer in the bottom, and the trilayer devices with TPOMe in the middle, when +100V was applied, the V th shifts were opposite those expected from bias stress. Dipole formation or partial ionization of chargeable groups at the interface between the dielectric layers are likely polarization mechanisms in these cases. A simple analytical model supports the plausibility of these mechanisms. This work provides examples of both stabilization and shifting of V th , and therefore controlling charge carrier density, in semiconductors overlying the dielectric multilayers.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Brownmillerite Phase Formation and Evolution in Epitaxial Strontium Ferrite Heterostructures
By controlling the synthesis and process conditions, we show that the oxygen vacancy channels (OVCs) of Brownmillerite-structured SrFeO2.5+? (0=??0.5) thin films can be oriented differently on the same LaAlO3(001) substrate due to either a bottom up or top down synthesis route. The brownmillerite structure formation and evolution processes yield distinctively different optical and electronic properties, owing to the difference in the oxygen content and OVC configuration in the resultant films. Moreover, we also show that in situ transmission electron microscopy (TEM) can induce oxygen loss and drive a phase transition from perovskite SrFeO3 to brownmillerite SrFeO2.5+? with mixed horizontally and vertically aligned OVCs. The dimensionality change during the TEM sample preparation makes the bottom up and top down model not applicable. Our results offer further insight into the phase stability and oxygen-diffusion mechanisms, which is important for the predictive synthesis of novel functional materials.
SrFeO3-d, compressive strain, oxygen vacancy chann↗
Voltage-Controlled Sensitivity of the Spin Seebeck Effect in Pt/Y 3 Fe 5 O 12 /MgO/(PbMg 1/3 Nb 2/3 O 3 ) 0.7 (PbTiO 3 ) 0.3 Multiferroic Heterostructures
The characteristics of pure spin current from the longitudinal spin Seebeck effect are investigated at room temperature in Pt / Y 3 Fe 5 O 12 deposited on the ( Pb Mg 1 / 3 Nb 2 / 3 O 3 ) 0.7 ( Pb Ti O 3 ) 0.3 substrate, through which electrostrain can be controllably applied. The applied voltage enables the modification of magnetic anisotropy in the magnetic insulating Y 3 Fe 5 O 12 layer, and thus the sensitivity of the spin Seebeck effect at small magnetic fields, without suppressing the spin Seebeck effect and the inverse spin Hall effect. This is due to the robust intrinsic physical parameters in Pt / Y 3 Fe 5 O 12 . In conclusion, our results pave the way for the application of voltage-controlled pure spin-current devices.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Effect of strain on magnetic and orbital ordering of LaSrCrO 3 / LaSrMnO 3 heterostructures
Not Available
Koohfar, Sanaz↗
Charge transfer in EuS/Bi 2 Se 3 heterostructures as indicated by the absence of Raman scattering
Not Available
Osterhoudt, Gavin B.↗