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At least 37 records · Page 2

Differential InP HEMT MMIC Amplifiers Embedded in Waveguides

Monolithic microwave integrated-circuit (MMIC) amplifiers of a type now being developed for operation at frequencies of hundreds of gigahertz contain InP high-electron-mobility transistors (HEMTs) in a differential configuration. The differential configuration makes it possible to obtain gains greater than those of amplifiers having the single-ended configuration. To reduce losses associated with packaging, the MMIC chips are designed integrally with, and embedded in, waveguide packages, with the additional benefit that the packages are compact enough to fit into phased transmitting and/or receiving antenna arrays. Differential configurations (which are inherently balanced) have been used to extend the upper limits of operating frequencies of complementary metal oxide/semiconductor (CMOS) amplifiers to the microwave range but, until now, have not been applied in millimeter- wave amplifier circuits. Baluns have traditionally been used to transform from single-ended to balanced configurations, but baluns tend to be lossy. Instead of baluns, finlines are used to effect this transformation in the present line of development. Finlines have been used extensively to drive millimeter- wave mixers in balanced configurations. In the present extension of the finline balancing concept, finline transitions are integrated onto the affected MMICs (see figure). The differential configuration creates a virtual ground within each pair of InP HEMT gate fingers, eliminating the need for inductive vias to ground. Elimination of these vias greatly reduces parasitic components of current and the associated losses within an amplifier, thereby enabling more nearly complete utilization of the full performance of each transistor. The differential configuration offers the additional benefit of multiplying (relative to the single-ended configuration) the input and output impedances of each transistor by a factor of four, so that it is possible to use large transistors that would otherwise have prohibitively low impedances. Yet another advantage afforded by the virtual ground of the differential configuration is elimination of the need for a ground plane and, hence, elimination of the need for back-side metallization of the MMIC chip. In turn, elimination of the back-side metallization simplifies fabrication, reduces parasitic capacitances, and enables mounting of the MMIC in the electric-field plane ("E-plane") of a waveguide. E-plane mounting is consistent with (and essential for the utility of) the finline configuration, in which transmission lines lie on a dielectric sheet in the middle of a broad side of the waveguide. E-plane mounting offers a combination of low loss and ease of assembly because no millimeter-wave wire bonds or transition substrates are required. Moreover, because there is no ground plane behind the MMIC, the impedance for the detrimental even (single-ended) mode is high, suppressing coupling to that mode. Still another advantage of E-plane mounting is that the fundamental waveguide mode is inherently differential, eliminating the need for a balun to excite the differential mode.

Kangaslahti, Pekka↗

Noise-optimal control of HEMT LNA's for compensation of temperature deviations

Noise-optimal control of high-electron mobility transistor low noise amplifier (HEMT LNA) bias voltage and current values was achieved at room temperature. The performance metric maximized was the amplifier gain divided by the amplifier input noise temperature, G/T(sub e). Additionally, the feasibility of automating the initial determination of bias settings was demonstrated in the laboratory. Simulation models of an HEMT were developed from available measurement data, installed on a Sun SPARC 1 workstation, and used in investigating several optimization algorithms. Simple tracking-type algorithms, which follow changes in optimum settings if started at or near the global optimum point, produced the best performance. Implementation of the optimization algorithms was performed using a three-stage Field Effect Transistor (FET) LNA and an existing test apparatus. Software was written to control the bias settings of the first stage of the LNA and to perform noise and gain measurements by using the test apparatus. The optimization control was then integrated with existing test software to create a master test and optimization program for test apparatus use.

Maccarley, C.↗

On-wafer vector network analyzer measurements in the 220-325 Ghz frequency band

We report on a full two-port on-wafer vector network analyzer test set for the 220-325 GHz (WR3) frequency band. The test set utilizes Oleson Microwave Labs frequency extenders with the Agilent 8510C network analyzer. Two port on-wafer measurements are made with GGB Industries coplanar waveguide (CPW) probes. With this test set we have measured the WR3 band S-parameters of amplifiers on-wafer, and the characteristics of the CPW wafer probes. Results for a three stage InP HEMT amplifier show 10 dB gain at 235 GHz [1], and that of a single stage amplifier, 2.9 dB gain at 231 GHz. The approximate upper limit of loss per CPW probe range from 3.0 to 4.8 dB across the WR3 frequency band.

coplanar waveguides↗

On-Wafer Measurement of a Multi-Stage MMIC Amplifier with 10 dB of Gain at 475 GHz

JPL has measured and calibrated a WR2.2 waveguide wafer probe from GGB Industries in order to allow for measurement of circuits in the 325-500 GHz range. Circuits were measured, and one of the circuits exhibited 10 dB of gain at 475 GHz. The MMIC circuit was fabricated at Northrop Grumman Corp. (NGC) as part of a NASA Innovative Partnerships Program, using NGC s 35-nm-gatelength InP HEMT process technology. The chip utilizes three stages of HEMT amplifiers, each having two gate fingers of 10 m in width. The circuits use grounded coplanar waveguide topology on a 50- m-thick substrate with through substrate vias. Broadband matching is achieved with coplanar waveguide transmission lines, on-chip capacitors, and open stubs. When tested with wafer probing, the chip exhibited 10 dB of gain at 475 GHz, with over 9 dB of gain from 445-490 GHz. Low-noise amplifiers in the 400-500 GHz range are useful for astrophysics receivers and earth science remote sensing instruments. In particular, molecular lines in the 400-500 GHz range include the CO 4-3 line at 460 GHz, and the CI fine structure line at 492 GHz. Future astrophysics heterodyne instruments could make use of high-gain, low-noise amplifiers such as the one described here. In addition, earth science remote sensing instruments could also make use of low-noise receivers with MMIC amplifier front ends. Present receiver technology typically employs mixers for frequency down-conversion in the 400-500 GHz band. Commercially available mixers have typical conversion loss in the range of 7-10 dB with noise figure of 1,000 K. A low-noise amplifier placed in front of such a mixer would have 10 dB of gain and lower noise figure, particularly if cooled to low temperature. Future work will involve measuring the noise figure of this amplifier.

Samoska, Lorene A.↗

Radar Waveform Pulse Analysis Measurement System for High-Power GaN Amplifiers

This work presents a measurement system to characterize the pulsed response of high-power GaN amplifiers for use in space-based SAR platforms that require very strict amplitude and phase stability. The measurement system is able to record and analyze data on three different time scales: fast, slow, and long, which allows for greater detail of the mechanisms that impact amplitude and phase stability. The system is fully automated through MATLAB, which offers both instrument control capability and in-situ data processing. To validate this system, a high-power GaN HEMT amplifier operated in saturation was characterized. The fast time results show that variations to the amplitude and phase are correlated to DC supply transients, while long time characteristics are correlated to temperature changes.

high-power amplifier (HPA)↗

Low-noise cryogenic transmission line

New low-noise cryogenic input transmission lines have been developed for the Deep Space Network (DSN) at 1.668 GHz for cryogenically cooled Field Effect Transistors (FET) and High Electron Mobility Transistor (HEMT) amplifiers. These amplifiers exhibit very low noise temperatures of 5 K to 15 K, making the requirements for a low-noise input transmission line critical. Noise contribution to the total amplifier system from the low-noise line is less than 0.5 K for both the 1.668-GHz and 2.25-GHz FET systems. The 1.668-GHz input line was installed in six FET systems which were implemented in the DSN for the Venus Balloon Experiment. The 2.25-GHz input line has been implemented in three FET systems for the DSN 34-m HEF antennas, and the design is currently being considered for use at higher frequencies.

Norris, D.↗

Proposed Solar Probe telecommunications system concept

A proposed telecommunications system concept for NASA's Solar Probe mission is described. Key system requirements include 70 kbps data rate at perihelion and operation at X-band (uplink/downlink) and Ka-band (downlink). A design control table is presented to demonstrate design compliance with telecommunication needs. The Ka-band feed is to be a hexagonal array of 37 active elements, each containing 1/4W HEMT amplifiers. The array is located at the Cassegrain point of a 0.75-m reflector. When compared to the TWTA-based system, the Ka-band active array feed provides advantages of reduced mass, increased dc power efficiency, enhanced reliability, graceful degradation, and reduced volume requirements.

Kellogg, K.↗

Proposed Ka-band array-fed near field Cassegrain system for NASA's Polar Probe Mission

A Ka-band array-fed near-field Cassegrain antenna envisioned for NASA's Solar Probe Mission is the basis of the present spacecraft telecommunications system, which is designed for operation at X-band up/downlink and Ka-band downlink. The hexagonal array employed, which is located at the Cassegrain point of the 0.75-m reflector, encompasses 37 active elements; each of these contains 1/4-W HEMT amplifiers. Relative to a TWTA-based system, this active array feed reduces mass, increases dc power efficiency, enhanced reliability, and reduces volume requirements.

Kellogg, K.↗

NASA Tech Briefs, September 2008

Topics covered include: Nanotip Carpets as Antireflection Surfaces; Nano-Engineered Catalysts for Direct Methanol Fuel Cells; Capillography of Mats of Nanofibers; Directed Growth of Carbon Nanotubes Across Gaps; High-Voltage, Asymmetric-Waveform Generator; Magic-T Junction Using Microstrip/Slotline Transitions; On-Wafer Measurement of a Silicon-Based CMOS VCO at 324 GHz; Group-III Nitride Field Emitters; HEMT Amplifiers and Equipment for their On-Wafer Testing; Thermal Spray Formation of Polymer Coatings; Improved Gas Filling and Sealing of an HC-PCF; Making More-Complex Molecules Using Superthermal Atom/Molecule Collisions; Nematic Cells for Digital Light Deflection; Improved Silica Aerogel Composite Materials; Microgravity, Mesh-Crawling Legged Robots; Advanced Active-Magnetic-Bearing Thrust- Measurement System; Thermally Actuated Hydraulic Pumps; A New, Highly Improved Two-Cycle Engine; Flexible Structural-Health-Monitoring Sheets; Alignment Pins for Assembling and Disassembling Structures; Purifying Nucleic Acids from Samples of Extremely Low Biomass; Adjustable-Viewing-Angle Endoscopic Tool for Skull Base and Brain Surgery; UV-Resistant Non-Spore-Forming Bacteria From Spacecraft-Assembly Facilities; Hard-X-Ray/Soft-Gamma-Ray Imaging Sensor Assembly for Astronomy; Simplified Modeling of Oxidation of Hydrocarbons; Near-Field Spectroscopy with Nanoparticles Deposited by AFM; Light Collimator and Monitor for a Spectroradiometer; Hyperspectral Fluorescence and Reflectance Imaging Instrument; Improving the Optical Quality Factor of the WGM Resonator; Ultra-Stable Beacon Source for Laboratory Testing of Optical Tracking; Transmissive Diffractive Optical Element Solar Concentrators; Delaying Trains of Short Light Pulses in WGM Resonators; Toward Better Modeling of Supercritical Turbulent Mixing; JPEG 2000 Encoding with Perceptual Distortion Control; Intelligent Integrated Health Management for a System of Systems; Delay Banking for Managing Air Traffic; and Spline-Based Smoothing of Airfoil Curvatures.

Source record↗

NASA Tech Briefs, July 2008

Topics covered include: Torque Sensor Based on Tunnel-Diode Oscillator; Shaft-Angle Sensor Based on Tunnel-Diode Oscillator; Ground Facility for Vicarious Calibration of Skyborne Sensors; Optical Pressure-Temperature Sensor for a Combustion Chamber; Impact-Locator Sensor Panels; Low-Loss Waveguides for Terahertz Frequencies; MEMS/ECD Method for Making Bi(2-x)Sb(x)Te3 Thermoelectric Devices; Low-Temperature Supercapacitors; Making a Back-Illuminated Imager with Back-Side Contact and Alignment Markers; Compact, Single-Stage MMIC InP HEMT Amplifier; Nb(x)Ti(1-x)N Superconducting-Nanowire Single-Photon Detectors; Improved Sand-Compaction Method for Lost-Foam Metal Casting; Improved Probe for Evaluating Compaction of Mold Sand; Polymer-Based Composite Catholytes for Li Thin-Film Cells; Using ALD To Bond CNTs to Substrates and Matrices; Alternating-Composition Layered Ceramic Barrier Coatings; Variable-Structure Control of a Model Glider Airplane; Axial Halbach Magnetic Bearings; Compact, Non-Pneumatic Rock-Powder Samplers; Biochips Containing Arrays of Carbon-Nanotube Electrodes; Nb(x)Ti(1-x)N Superconducting-Nanowire Single-Photon Detectors; Neon as a Buffer Gas for a Mercury-Ion Clock; Miniature Incandescent Lamps as Fiber-Optic Light Sources; Bidirectional Pressure-Regulator System; and Prism Window for Optical Alignment. Single-Grid-Pair Fourier Telescope for Imaging in Hard-X Rays and gamma Rays Range-Gated Metrology with Compact Optical Head Lossless, Multi-Spectral Data Compressor for Improved Compression for Pushbroom-Typetruments.

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Superconducting kinetic inductance photon detectors.

We are investigating a novel superconducting detector and readout method that could lead to photon counting, energy resolving focal plane arrays. This concept is intrinsically different from STJ and TES detectors, and in principle could deliver large pixel counts, high sensitivity, and Fano-limited spectral resolution in the ptical/UV/X-ray bands. The readout uses the monotonic relation between the kinetic surface inductance L***subs***, of a superconductor and the density of quasiparticles n, which holds even at temperatures far below T***subc***. This allows a sensitive readout of the number of excess quasiparticles in the detector by monitoring the transmission phase of a resonant circuit. The most intriguing aspect of this concept is that passive frequency multiplexing could be used to read out ~ l0***super4*** detectors with a single HEMT amplifier. Single x-ray events have been observed in prototype detectors.

kinetic↗

On 32-GHz cryogenically cooled HEMT low-noise amplifiers

The cryogenic noise temperature performance of a two-stage and a three-stage 32 GHz High Electron Mobility Transistor (HEMT) amplifier was evaluated. The amplifiers employ 0.25 micrometer conventional AlGaAs/GaAs HEMT devices, hybrid matching input and output microstrip circuits, and a cryogenically stable dc biasing network. The noise temperature measurements were performed in the frequency range of 31 to 33 GHz over a physical temperature range of 300 K down to 12 K. Across the measurement band, the amplifiers displayed a broadband response, and the noise temperature was observed to decrease by a factor of 10 in cooling from 300 K to 15 K. The lowest noise temperature measured for the two-stage amplifier at 32 GHz was 35 K with an associated gain of 16.5 dB, while the three-stage amplifier measured 39 K with an associated gain of 26 dB. It was further observed that both amplifiers were insensitive to light.

Bautista, J. J.↗

32-GHz cryogenically cooled HEMT low-noise amplifiers

The cryogenic noise temperature performance of a two-stage and a three-stage 32 GHz high electron mobility transistor (HEMT) amplifier was evaluated. The amplifiers employ 0.25 micrometer conventional AlGaAs/GaAs HEMT devices, hybrid matching input and output microstrip circuits, and a cryogenically stable dc biasing network. The noise temperature measurements were performed in the frequency range of 31 to 33 GHz over a physical temperature range of 300 K down to 12 K. Across the measurement band, the amplifiers displayed a broadband response, and the noise temperature was observed to decrease by a factor of 10 in cooling from 300 to 15 K. The lowest noise temperature measured for the two-stage amplifier at 32 GHz was 35 K with an associated gain of 16.5 dB, while the three-stage amplifier measured 39 K with an associated gain of 26 dB. It was further observed that both amplifiers were insensitive to light.

Duh, K. H. George↗

High-performance Ka-band and V-band HEMT low-noise amplifiers

Quarter-micron-gate-length high-electron-mobility transistors (HEMTs) have exhibited state-of-the-art low-noise performance at millimeter-wave frequencies, with minimum noise figures of 1.2 dB at 32 GHz and 1.8 dB at 60 GHz. At Ka-band, two-stage and three-stage HEMT low noise amplifiers have demonstrated noise figures of 1.7 and 1.9 dB, respectively, with associated gains of 17.0 and 24.0 dB at 32 GHz. At V-band, two stage and three-stage HEMT amplifiers yielded noise figures of 3.2 and 3.6 dB, respectively, with associated gains of 12.7 and 20.0 dB at 60 GHz. The 1-dB-gain compression point of all the amplifiers is greater than +6 dBm. The results clearly show the potential of short-gate-length HEMTs for high-performance millimeter-wave receiver applications.

Duh, K. H. George↗

THz Instrumentation for the Herschel Space Observatory's Heterodyne Instrument for Far Infrared

The Heterodyne Instrument for Far Infrared (HIFI) on ESA's Herschel Space Observatory utilizes a variety of novel RF components in its five SIS receiver channels covering 480-1250 GHz and two HEB receiver channels covering 1410-1910 GHz. The local oscillator unit will be passively cooled while the focal plane unit is cooled by superfluid helium and cold helium vapors. HIFI employs W-band GaAs amplifiers, InP HEMT low noise IF amplifiers, fixed tuned broadband planar diode multipliers, high power W-bapd Isolators, and novel material systems in the SIS mixers. The National Aeronautics and Space Administration through the Jet Propulsion Laboratory is managing the development of the highest frequency (1119-1250 GHz) SIS mixers, the local oscillators oscillators for the three highest frequency receivers as well as W-band power amplifiers, high power W-band isolators, varactor diode devices for all high frequency multipliers and InP HEMT components for all the receiver channels intermediate frequency amplifiers. The NASA developed components represent a significant advancement in the available performance. This paper presents an update of the performance and the current state of development.

local oscillators↗

Three MMIC Amplifiers for the 120-to-200 GHz Frequency Band

Closely following the development reported in the immediately preceding article, three new monolithic microwave integrated circuit (MMIC) amplifiers that would operate in the 120-to-200-GHz frequency band have been designed and are under construction at this writing. The active devices in these amplifiers are InP high-electron-mobility transistors (HEMTs). These amplifiers (see figure) are denoted the LSLNA150, the LSA200, and the LSA185, respectively. Like the amplifiers reported in the immediately preceding article, the LSLNA150 (1) is intended to be a prototype of low-noise amplifiers (LNAs) to be incorporated into spaceborne instruments for sensing cosmic microwave background radiation and (2) has potential for terrestrial use in electronic test equipment, passive millimeter-wave imaging systems, radar receivers, communication receivers, and systems for detecting hidden weapons. The HEMTs in this amplifier were fabricated according to 0.08- m design rules of a commercial product line of InP HEMT MMICs at HRL Laboratories, LLC, with a gate geometry of 2 fingers, each 15 m wide. On the basis of computational simulations, this amplifier is designed to afford at least 15 dB of gain, with a noise figure of no more than about 6 dB, at frequencies from 120 to 160 GHz. The measured results of the amplifier are shown next to the chip photo, with a gain of 16 dB at 150 GHz. Noise figure work is ongoing. The LSA200 and the LSA185 are intended to be prototypes of transmitting power amplifiers for use at frequencies between about 180 and about 200 GHz. These amplifiers have also been fabricated according to rules of the aforesaid commercial product line of InP HEMT MMICs, except that the HEMTs in these amplifiers are characterized by a gate geometry of 4 fingers, each 37 m wide. The measured peak performance of the LSA200 is characterized by a gain of about 1.4 dB at a frequency of 190 GHz; the measured peak performance of the LSA185 is characterized by a gain of about 2.7 dB at a frequency of 181 GHz. The measured gain results of each chip are shown next to their respective photos.

Samoska, Lorene↗