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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1992

The achievement of low contact resistance to indium phosphide: The roles of Ni, Au, Ge, and combinations thereof

We have investigated the electrical and metallurgical behavior of Ni, Au-Ni, and Au-Ge-Ni contacts on n-InP. We have found that very low values of contact resistivity rho(sub c) in the E-7 omega-sq cm range are obtained with Ni-only contacts. We show that the addition of Au to Ni contact metallization effects an additional order of magnitude reduction in rho(sub c). Ultra-low contact resistivities in the E-8 omega-sq cm range are obtained with both the Au-Ni and the Au-Ge-Ni systems, effectively eliminating the need for the presence of Ge in the Au-Ge-Ni system. The formation of various nickel phosphides at the metal-InP interface is shown to be responsible for the observed rho(sub c) values in the Ni and Au-Ni systems. We show, finally, that the order in which the constituents of Au-Ni and Au-Ge-Ni contacts are deposited has a significant bearing on the composition of the reaction products formed at the metal-InP interface and therefore on the contact resistivity at that interface.

Fatemi, Navid S.↗
NASA NTRS1993

Visible photoluminescence of porous Si(1-x)Ge(x) obtained by stain etching

We have investigated visible photoluminescence (PL) from thin porous Si(1-x)Ge(x) alloy layers prepared by stain etching of molecular-beam-epitaxy-grown material. Seven samples with nominal Ge fraction x varying from 0.04 to 0.41 were studied at room temperature and 80 K. Samples of bulk stain etched Si and Ge were also investigated. The composition of the porous material was determined using X-ray photoemission spectroscopy and Rutherford backscattering techniques to be considerably more Ge-rich than the starting epitaxial layers. While the luminescence intensity drops significantly with the increasing Ge fraction, we observe no significant variation in the PL wavelength at room temperature. This is clearly in contradiction to the popular model based on quantum confinement in crystalline silicon which predicts that the PL energy should follow the bandgap variation of the starting material. However, our data are consistent with small active units containing only a few Si atoms that are responsible for the light emission. Such units are present in many compounds proposed in the literature as the cause of the visible PL in porous Si.

Ksendzov, A.↗
NASA NTRS1995

Measurements of Local Strain Variation in Si(1-x)Ge(x)/Si Heterostructures

The energy splitting of the conduction-band minimum of Si(1-x), Ge(x), due to strain has been directly measured by the application of ballistic-electron-emission microscope (BEEM) spectroscopy to Ag/Si(1-x), Ge(x) structures. Experimental values for this conduction-band splitting agree well with calculations. For Au/Si(1-x), Ge(x), however, heterogeneity in the strain of the Si(1-x), Ge(x) layer is introduced by deposition of the Au. This variation is attributed to species interdiffusion, which produces a rough Si(1-x)Ge(x) surface. Preliminary modeling indicates that the observed roughness is consistent with the strain variation measured by BEEM.

Bell, L. D.↗
NASA NTRS1979

Nebular condensation of Ga, Ge and Sb and the chemical classification of iron meteorites

The quantization of the Ga and Ge contents in iron meteorites, which is used as a key parameter in the chemical classification of iron meteorites, is discussed in terms of nebular condensation. The calculation of nebular equilibrium condensation is examined, taking into account the dependence of the activity coefficient on temperature and composition, and recent calculations of the condensation temperatures of Ga, Ge, Sb, Au, As and Cu are presented, noting that Ge is the most volatile siderophile, followed by Ga and Sb. The narrow intragroup ranges of Ga and Ge are interpreted in terms of minimal fractionation during core crystallization, while the larger ranges of Sb are attributed to its significantly smaller solid/liquid distribution coefficient in IIIAB meteorites.

Wai, C. M.↗
NASA NTRS1990

Si-Ge-metal ternary phase diagram calculations

Solution crystal growth and doping conditions of Si-Ge alloys used for high-temperature thermoelectric generation are determined here. Liquid-phase epitaxy (LPE) has been successfully employed recently to obtain single-crystalline homogeneous layers of Si-Ge solid solutions from a liquid metal solvent. Knowledge of Si-Ge-metallic solvent ternary phase diagrams is essential for further single-crystal growth development. Consequently, a thermodynamic equilibrium model was used to calculate the phase diagrams of the Si-Ge-M systems, including solid solubilities, where M is Al, Ga, In, Sn, Pb, Sb, or Bi. Good agreement between calculated liquidus and solidus data and experimental DTA and microprobe results was obtained. The results are used to compare the suitability of the different systems for crystal growth (by LPE-type process).

Fleurial, J. P.↗
NASA NTRS1990

Novel Si(1-x)Ge(x)/Si heterojunction internal photoemission long wavelength infrared detectors

There is a major need for long-wavelength-infrared (LWIR) detector arrays in the range of 8 to 16 microns which operate with close-cycle cryocoolers above 65 K. In addition, it would be very attractive to have Si-based infrared (IR) detectors that can be easily integrated with Si readout circuitry and have good pixel-to-pixel uniformity, which is critical for focal plane array (FPA) applications. Here, researchers report a novel Si(1-x)Ge(x)/Si heterojunction internal photoemission (HIP) detector approach with a tailorable long wavelength infrared cutoff wavelength, based on internal photoemission over the Si(1-x)Ge(x)/Si heterojunction. The HIP detectors were grown by molecular beam epitaxy (MBE), which allows one to optimize the device structure with precise control of doping profiles, layer thickness and composition. The feasibility of a novel Si(1-x)Ge(x)/Si HIP detector has been demonstrated with tailorable cutoff wavelength in the LWIR region. Photoresponse at wavelengths 2 to 10 microns are obtained with quantum efficiency (QE) above approx. 1 percent in these non-optimized device structures. It should be possible to significantly improve the QE of the HIP detectors by optimizing the thickness, composition, and doping concentration of the Si(1-x)Ge(x) layers and by configuring the detector for maximum absorption such as the use of a cavity structure. With optimization of the QE and by matching the barrier energy to the desired wavelength cutoff to minimize the thermionic current, researchers predict near background limited performance in the LWIR region with operating temperatures above 65K. Finally, with mature Si processing, the relatively simple device structure offers potential for low-cost producible arrays with excellent uniformity.

Lin, T. L.↗
NASA NTRS1991

Radiation resistance of Ge, Ge0.93Si0.07, GaAs and Al0.08Ga0.92 as solar cells

Solar cells made of Ge, Ge(0.93)Si(0.07) alloys, GaAs and Al(0.08)Ga(0.92)As were irradiated in two experiments with 1-meV electrons at fluences as great as 1 x 10(exp 16) cm(exp-2). Several general trends have emerged. Low-band-gap Ge and Ge(0.93)Si(0.07) cells show substantial resistance to radiation-induced damage. The two experiments showed that degradation is less for Al(0.08)Ga(0.92)As cells than for similarly irradiated GaAs cells. Compared to homojunctions, cells with graded-band-gap emitters did not show the additional resistance to damage in the second experiment that had been seen in the first. The thickness of the emitter is a key parameter to limit the degradation in GaAs devices.

Timmons, M. L.↗
NASA NTRS1983

Ge:Be far infrared photoconductors

Some conclusions reached are as follow. Ge:Be detectors provide lower Noise Equivalent Power (NEP) and higher responsivities than state of the art Ge:Ga detectors at 42 microns. Reliable Be doping was achieved with Czochralski growth from a carbon susceptor under vacuum. The photoconductive behavior of Ge:Be detectors is strongly influenced by the concentration of residual shallow impurities. Optimization of Ge:Be detectors requires both a low concentration and precise compensation of shallow acceptors.

Haegel, N. M.↗
NASA NTRS1994

GRIS background reduction results using isotopically enriched Ge

The Gamma Ray Imaging Spectrometer (GRIS) was flown twice from Alice Springs, Australia, in the spring of 1992 for a total of 32 hr at float altitude. One of the seven Ge detectors was isotopically enriched (greater than 97% Ge-70). This was the first time an enriched-Ge detector was used for astrophysical observations. Because of its thick anticoincidence shield, the GRIS instrument background is dominated by internal beta-decay in the energy range of 200-1000 keV. Half of the contribution in this beta-decay 'hump' is due to neutron-activated Ge-74. In this energy range, GRIS observed a factor of 2 reduction in the background in the enriched detector, as predicted. In future instruments (e.g., INTEGRAL), with thicker anticoincidence shields and smaller apertures, the background reduction will be even larger. Three strong instrumental background lines (54, 67, and 139 keV) are also eliminated. The elimination of the first two is particularly important for cylotron line observations.

Barthelmy, S. D.↗
NASA NTRS1994

Ballistic-Electron-Emission-Microscopy of Strained Si(sub 1-x)Ge(sub x) Layers

Ballistic-electron-emission microscopy (BEEM) has been used to investigate the effects of strain on Si(sub 1-x)Ge(sub x) alloys. Lifting of the degeneracy of the conduction-band minimum of Si(sub 1-x)Ge(sub x), due to lattice deformation has been directly measured by application of BEEM spectroscopy to Ag/Si structures. Experimental values for this conduction-band splitting agree well with calculations. In addition, an unexpected heterogeneity in the strain of the Si(sub 1-x)Ge(sub x) layer is introduced by deposition of Au. This effect, not observed with Ag, is attributed to species interdiffusion and has important implications for metal-semiconductor devices based oil pseudomorphic Si(sub 1-x)Ge(sub x)/Si material systems.

Bell, L. D.↗
NASA NTRS1996

Hot Carrier Dynamics in the X Valley in Si and Ge Measured by Pump-IR-Probe Absorption Spectroscopy

Si is the semiconductor of choice for nanoelectronic roadmap into the next century for computer and other nanodevices. With growing interest in Si, Ge, and Si(sub m)Ge(sub n) strained superlattices, knowledge of the carrier relaxation processes in these materials and structures has become increasingly important. The limited time resolution for earlier studies of carrier dynamics in Ge and Si, performed using Nd:glass lasers, was not sufficient to observe the fast cooling processes. In this paper, we present a direct measurement of hot carrier dynamics in the satellite X valley in Si and Ge by time-resolved infrared(IR) absorption spectroscopy, and show the potential of our technique to identify whether the X valley is the lowest conduction valley in semiconductor materials and structures.

Wang, W. B.↗
NASA NTRS1993

Characterization of Si (sub X)Ge (sub 1-x)/Si Heterostructures for Device Applications Using Spectroscopic Ellipsometry

Spectroscopic ellipsometry (SE) characterization of several complex Si (sub X)Ge (sub 1-x)/Si heterostructures prepared for device fabrication, including structures for heterojunction bipolar transistors (HBT), p-type and n-type heterostructure modulation doped field effect transistors, has been performed. We have shown that SE can simultaneously determine all active layer thicknesses, Si (sub X)Ge (sub 1-x) compositions, and the oxide overlayer thickness, with only a general knowledge of the structure topology needed a priori. The characterization of HBT material included the SE analysis of a Si (sub X)Ge (sub 1-x) layer deeply buried (600 nanometers) under the silicon emitter and cap layers. In the SE analysis of n-type heterostructures, we examined for the first time a silicon layer under tensile strain. We found that an excellent fit can be obtained using optical constants of unstrained silicon to represent the strained silicon conduction layer. We also used SE to measure lateral sample homogeneity, providing quantitative identification of the inhomogeneous layer. Surface overlayers resulting from prior sample processing were also detected and measured quantitatively. These results should allow SE to be used extensively as a non-destructive means of characterizing Si (sub X)Ge (sub 1-x)/Si heterostructures prior to device fabrication and testing.

Sieg, R. M.↗
NASA NTRS1972

Superconducting properties of annealed Nb-Al-Ge thin films.

Discussion of the superconducting transition temperature and other superconducting properties of annealed Nb-Al-Ge thin films which were prepared by sputtering from a 3Nb-0.8Al-0.2Ge cathode. Annealing was performed in a high-vacuum environment maintained at 10 to the minus 9th torr or less, for times and temperatures near the optimum conditions for bulk Nb-Al-Ge. Films with transition temperatures from 12 to 16 K were annealed and in all cases a rise in transition temperature was observed, with the maximum value obtained thus far being 17.5 K. The current carrying capacity values, already substantially higher for unannealed thin films than for the bulk, were raised even further in the annealed samples, indicating that annealing has no detrimental effects on the flux pinning in these films.

Janocko, M. A.↗
NASA NTRS1978

Requirements for Kalman filtering on the GE-701 whole word computer

The results of a study to determine scaling, storage, and word length requirements for programming the Kalman filter on the GE-701 Whole Word Computer are reported. Simulation tests are presented which indicate that the Kalman filter, using a square root formulation with process noise added, utilizing MLS, radar altimeters, and airspeed as navigation aids, may be programmed for the GE-701 computer to successfully navigate and control the Boeing B737-100 during landing approach, landing rollout, and turnoff. The report contains flow charts, equations, computer storage, scaling, and word length recommendations for the Kalman filter on the GE-701 Whole Word computer.

Pines, S.↗
NASA NTRS1982

X-ray diffraction from high pressure Ge using synchrotron radiation

The high pressure structural phase transition in Ge has been studied using the energy dispersive X-ray diffraction technique and a synchrotron radiation source. Ge was observed to transform to the beta-Sn tetragonal structure in agreement with the earlier results of Jamieson, but the phase transition began at 80 + or - 5 kilobars, a somewhat lower value than generally reported. These experimental diffraction results are compared with the recent self-consistent pseudopotential calculations of Yin and Cohen (1981) and with the observed transition pressure for shock wave loaded Ge.

Baublitz, M., Jr.↗
NASA NTRS1983

Performance and materials aspects of Ge:Be photoconductors

Ge:Be photoconductors were developed for low photon background applications in the 30 to 50 MM wavelength region. These detectors provide higher responsivity and lower noise equivalent power (NEP) than the Ge:Ga detectors currently operating in this wavelength range. Beryllium doped single crystals were grown by the Czochralski method from a carbon susceptor under a vacuum of approx. one million torr. An optimum detective quantum efficiency of 46% at a background flux of 1.5 x 10 to the 8th power photons/second (7 x 10 to the 13th power W) was reported. Ge:Be detector performance is strongly influenced by the absolute concentrations and the concentration ratio of residual shallow donors and shallow acceptors.

Haegel, N. M.↗
NASA NTRS1983

Performance and materials aspects of Ge:Be photoconductors

Ge:Be photoconductors have been developed for low photon background applications in the 30 - 50 micron wavelength region. These detectors provide higher responsivity and lower noise equivalent power (NEP) than the Ge:Ga detectors currently operating in this wavelength range. Beryllium-doped single crystals were grown by the Czochralski method from a carbon susceptor under a vacuum of approximately 10 to the -6th torr. An optimum detective quantum efficiency of 46 percent at a background flux of 1.5 x 10 to the 8th photons/second (7 x 10 to the -13th W is reported. Ge:Be detector performance is strongly influenced by the absolute concentrations and the concentration ratio of residual shallow donors and shallow acceptors.

Haegel, N. M.↗
NASA NTRS1990

Intersubband absorption in Si(1-x)Ge(x/Si superlattices for long wavelength infrared detectors

Researchers calculated the absorption strengths for intersubband transitions in n-type Si(1-x)Ge(x)/Si superlattices. These transitions can be used for the detection of long-wavelength infrared radiation. A significant advantage in Si(1-x)Ge(x)/Si supperlattice detectors is the ability to detect normally incident light; in Ga(1-x)Al(x)As/GaAs superlattices, intersubband absorption is possible only if the incident light contains a polarization component in the growth direction of the superlattice. Researchers present detailed calculation of absorption coefficients, and peak absorption wavelengths for (100), (111) and (110) Si(1-x)Ge(x)/Si superlattices. Peak absorption strengths of about 2000 to 6000 cm(exp -1) were obtained for typical sheet doping concentrations (approx. equals 10(exp 12)cm(exp -2)). Absorption comparable to that in Ga(1-x)Al(x)As/GaAs superlattice detectors, compatibility with existing Si technology, and the ability to detect normally incident light make these devices promising for future applications.

Rajakarunanayake, Yasantha↗