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NASA NTRS1996

From Competence to Efficiency: A Tale of GA Progress

Genetic algorithms (GAs) - search procedures based on the mechanics of natural selection and genetics - have grown in popularity for the solution of difficult optimization problems. Concomitant with this growth has been a rising cacaphony of complaint asserting that too much time must be spent by the GA practitioner diddling with codes, operators, and GA parameters; and even then these GA cassandras continue, and the user is still unsure that the effort will meet with success. At the same time, there has been a rising interest in GA theory by a growing community - a theorocracy - of mathematicians and theoretical computer scientists, and these individuals have turned their efforts increasingly toward elegant abstract theorems and proofs that seem to the practitioner to offer little in the way of answers for GA design or practice. What both groups seem to have missed is the largely unheralded 1993 assembly of integrated, applicable theory and its experimental confirmation. This theory has done two key things. First, it has predicted that simple GAs are severely limited in the difficulty of problems they can solve, and these limitations have been confirmed experimentally. Second, it has shown the path to circumventing these limitations in nontraditional GA designs such as the fast messy GA. This talk surveys the history, methodology, and accomplishment of the 1993 applicable theory revolution. After arguing that these accomplishments open the door to universal GA competence, the paper shifts the discussion to the possibility of universal GA efficiency in the utilization of time and real estate through effective parallelization, temporal decomposition, hybridization, and relaxed function evaluation. The presentation concludes by suggesting that these research directions are quickly taking us to a golden age of adaptation.

Goldberg, David E.↗

NASA NTRS2021

GA-ASI Final Report and Program Wrap-up for NASA System Integration and Operationalization (SIO)

The NASA SIO demonstration flight of April 3, 2020 represents a successful culmination of 18 months of coordinated effort between GA-ASI, NASA, the FAA, Collins Aerospace, and Honeywell Aerospace to operate a Medium Altitude, Long Endurance (MALE) Unmanned Aircraft System (UAS) safely in the National Airspace System (NAS) using industry leading prototype technologies. The GA-ASI team consisted of technical experts, program managers, engineers, mechanics, flight technicians, flight crews, and numerous other subject matter experts. This final report describes the most significant and potentially impactful aspects of the planning, integration, test, and flight aspects of this effort. GA-ASI successfully integrated the key technologies needed for UAS to fly in the NAS onto our prototype SkyGuardian UAS, which was designed to meet the most stringent airworthiness standards applicable to an aircraft of its size category. A proven Detect and Avoid (DAA) system, developed by GA-ASI and utilizing Honeywell Aerospace technology was integrated onto SkyGuardian for the first time, along with datalink radios from Collins Aerospace that meet the new civil standard for Control and Non-Payload Communication (CNPC) links. GA-ASI also obtained approvals from the FAA and FCC to operate the reconfigured UAS. The SIO demonstration flight represented a commercial aerial surveying operation conducted at medium altitude (>10,000ft above mean sea level). The aircraft’s onboard sensors were used to capture photographic, infrared and radar imagery of public and commercial infrastructure and land, and to subsequently produce the types of data products that would provide business value to potential customers. These survey services would supplement or replace services currently provided by manned airplanes and helicopters, small drones or satellites. A “virtual” mission was also planned, to show what additional survey data could have been captured during the flight if additional sensors had been installed on the aircraft’s external hardpoints. This revision of the final report focuses on information of value to the wider UAS community, and avoids propriety data to facilitate broad dissemination. It also includes a description of GA-ASI’s engagement with the FAA following the SIO flight, which led to the award of an updated Special Airworthiness Certificate in the Experimental Category (SAC-EC) and a Certificate of Waiver or Authorization (COA) allowing operation of the SkyGuardian UAS using its DAA system to satisfy right-of-way rules, instead of a chase plane. The associated operational limitations are described to illustrate the further steps that would be needed to remove those limitations for unhindered commercial operations.

Flight demonstration↗

NASA NTRS1977

LPE growth of GaAs-Ga/1-x/Al/x/As solar cells

The procedures for the liquid phase epitaxial (LPE) growth of high efficiency p-Ga(1-x)Al(x)As,p-GaAs,n-GaAs solar cells have been developed. The methods are based on forming the structure by a one-step process in which the Zn-diffused p-n junction in the n-type GaAs substrate forms in conjunction with the LPE growth of the Zn-doped p-Ga(1-x)Al(x)As layer. For structures with 1-10 micron thick Ga(1-x)Al(x)As layers, an isothermal soak of the GaAs substrate in a saturated Ga-Al-As: Zn melt followed by ramp cooling produces good cells. For structures with less than one micron thick Ga(1-x)Al(x)As layers, it is necessary to isothermally soak the GaAs substrate in an undersaturated melt, and ramp cooling is not required.

Woodall, J. M.↗

NASA NTRS1994

Abiological origin of described stromatolites older than 3.2 Ga

The three well-documented occurrences of three-dimensional stromatolites older than 3.2 Ga meet most criteria for biogenicity except the presence of fossil bacteria. However, they also show features more consistent with nonbiological origins. Small conical structures in the Strelley Pool chert in the upper part of the Warrawoona Group (3.5-3.2 Ga), Western Australia, lack the structure typical of stromatolites and probably formed mainly through evaporitc precipitation. A domal structure from the North Pole chert, Warrawoona Group, formed by soft-sediment deformation or originally flat layers. Laminated chert containing domal and pseudocolumnar structures in the Onverwacht Group (3.5-3.3 Ga), Barberton Greenstone Belt, South Africa, extends downward into veins and cavities, where it formed through inorganic precipitation. Although bacterial communities were widespread on Earth prior to 3.2 Ga, these particular three-dimensional structures are probably abiotic in origin and do not provide information on the paleobiology or paleoecology of early organisms. The paucity of Archean stromatolites older than 3.2 Ga probably reflects the paucity of known and possibly extant carbonate deposits of this age.

Non-NASA Center↗

NASA NTRS1991

The Influence of Interstitial Ga and Interfacial Au (sub 2)P (sub 3) on the Electrical and Metallurgical Behavior of Au-Contacted III-V Semiconductors

The introduction of a very small amount of Ga into Au contact metallization on InP is shown to have a significant effect on both the metallurgical and electrical behavior of that contact system. Ga atoms in the interstices of the Au lattice are shown to be effective in preventing the solid state reactions that normally take place between Au and InP during contact sintering. In addition to suppressing the metallurgical interaction, the presence of small amounts of Ga is shown to cause an order of magnitude reduction in the specific contact resistivity. Evidence is presented that the reactions of GaP and GaAs with Au contacts are also drastically affected by the presence of Ga. The sintering behavior of the Au-GaP and the Au-GaAs systems (as contrasted with that of the Au-InP system) is explained as due to the presence of interstitial Ga in the contact metallization. Finally the large, two-to-three order of magnitude drop in the contact resistance that occurs in the Au-InP system upon sintering at 400 degrees Centigrade is shown to be a result of the formation of an Au (sub 2) P (sub 3) layer at the metal-semiconductor interface. Contact resistivities in the 10 (sup -6) ohm square centimeter range are obtained for as-deposited Au on InP when a thin (20 Angstrom) layer of Au (sub 2) P (sub 3) is introduced between the InP and the Au contacts.

Weizer, Victor G.↗

NASA NTRS1979

Nebular condensation of Ga, Ge and Sb and the chemical classification of iron meteorites

The quantization of the Ga and Ge contents in iron meteorites, which is used as a key parameter in the chemical classification of iron meteorites, is discussed in terms of nebular condensation. The calculation of nebular equilibrium condensation is examined, taking into account the dependence of the activity coefficient on temperature and composition, and recent calculations of the condensation temperatures of Ga, Ge, Sb, Au, As and Cu are presented, noting that Ge is the most volatile siderophile, followed by Ga and Sb. The narrow intragroup ranges of Ga and Ge are interpreted in terms of minimal fractionation during core crystallization, while the larger ranges of Sb are attributed to its significantly smaller solid/liquid distribution coefficient in IIIAB meteorites.

Wai, C. M.↗

NASA NTRS1988

Barrier height enhancement of InP-based n-Ga(0.47)In(0.53)As Schottky-barrier diodes grown by molecular beam epitaxy

Barrier height enhancement of an InP-based p(+)n-Ga(0.47)In(0.53)As Schottky diode grown by MBE has been demonstrated for infra-red photodetector applications. A barrier height of 0.35 eV for n-Ga(0.47)In(0.53)As Schottky barrier diodes, was increased to the effective barrier height of 0.55 eV, with a p(+)-Ga(0.47)In(0.53)As surface layer of 30 nm thick. The results show a reverse leakage current density of 0.0015 A/sq cm and a junction capacitance of 0.3 pF, which are comparable to those of p-Ga(0.47)In(0.53)As Schottky-barrier diodes at a reverse bias voltage of 5 V.

Kim, J. H.↗

NASA NTRS1991

The influence of interstitial Ga and interfacial Au2P3 on the electrical and metallurgical behavior of Au-contacted III-V semiconductors

The effect of introducing a very small amount of Ga into Au-contacted InP on the behavior of that contact system was investigated. It was found that Ga affected both the metallurgical and the electrical behavior of the system. It is shown that Ga atoms in the interstices of the Au lattice prevent the solid-state reactions that normally take place between Au and InP during contact sintering and cause an order of magnitude reduction in the specific contact resistivity. It is also shown that the presence of Ga affects the reactions of GaP and GaAs with Au contacts.

Weizer, Victor G.↗

NASA NTRS1997

Geochemistry of approximately 1.9 Ga sedimentary rocks from northeastern Labrador, Canada

Fifty-eight rock chips from fifteen samples of sedimentary rocks from the Ramah Group (approximately 1.9 Ga) in northeastern Labrador, Canada, were analyzed for major and minor elements, including C and S, to elucidate weathering processes on the Earth's surface about 1.9 Ga ago. The samples come from the Rowsell Harbour, Reddick Bight, and Nullataktok Formations. Two rock series, graywackes-gray shales of the Rowsell Harbour, Reddick Bight and Nullataktok Formations, and black shales of the Nullataktok Formation, are distinguishable on the basis of lithology, mineralogy, and major and trace element chemistry. The black shales show lower concentrations than the graywackes-gray shales in TiO2 (0.3-0.7 wt% vs. 0.7-1.8 wt%), Al2O3 (9.5-20.1 wt% vs. 13.0-25.0 wt%), and sigma Fe (<1 wt% vs. 3.8-13.9 wt% as FeO). Contents of Zr, Th, U, Nb, Ce, Y, Rb, Y, Co, and Ni are also lower in the black shales. The source rocks for the Ramah Group sediments were probably Archean gneisses with compositions similar to those in Labrador and western Greenland. The major element chemistry of source rocks for the Ramah Group sedimentary rocks was estimated from the Al2O3/TiO2 ratios of the sedimentary rocks and the relationship between the major element contents (e.g., SiO2 wt%) and Al2O3/TiO2 ratios of the Archean gneisses. This approach is justified, because the Al/Ti ratios of shales generally retain their source rock values; however, the Zr/Al, Zr/Ti, and Cr/Ni ratios fractionate during the transport of sediments. The measured SiO2 contents of shales in the Ramah Group are generally higher than the estimated SiO2 contents of source rocks by approximately 5 wt%. This correction may also have to be applied when estimating average crustal compositions from shales. Two provenances were recognized for the Ramah Group sediments. Provenance I was comprised mostly of rocks of bimodal compositions, one with SiO2 contents approximately 45 wt% and the other approximately 65 wt%, and was the source for most sedimentary rocks of the Ramah Group, except for black shales of the Nullataktok Formation. The black shales were apparently derived from Provenance II that was comprised mostly of felsic rocks with SiO2 contents approximately 65 wt%. Comparing the compositions of the Ramah Group sedimentary rocks and their source rocks, we have recognized that several major elements, especially Ca and Mg, were lost almost entirely from the source rocks during weathering and sedimentation. Sodium and potassium were also leached almost entirely during the weathering of the source rocks. However, significant amounts of Na were added to the black shales and K to all the rock types during diagenesis and/or regional metamorphism. The intensity of weathering of source rocks for the Ramah Group sediments was much higher than that of typical Phanerozoic sediments, possibly because of a higher PCO2 in the Proterozoic atmosphere. Compared to the source rock values, the Fe3+/Ti ratios of many of the graywackes and gray shales of the Ramah Group are higher, the Fe2+/Ti ratios are lower, and the sigma Fe/Ti ratios are the same. Such characteristics of the Fe geochemistry indicate that these sedimentary rocks are comprised of soils formed by weathering of source rocks under an oxygen-rich atmosphere. The atmosphere about 1.9 Ga was, therefore, oxygen rich. Typical black shales of Phanerozoic age exhibit positive correlations between the organic C contents and the concentrations of S, U, and Mo, because these elements are enriched in oxygenated seawater and are removed from seawater by organic matter in sediments. However, such correlations are not found in the Ramah Group sediments. Black shales of the Ramah Group contain 1.7-2.8 wt% organic C, but are extremely depleted in sigma Fe (<1 wt% as FeO), S (<0.3 wt%), U (approximately l ppm), Mo (<5 ppm), Ni (<2 ppm), and Co (approximately 0 ppm). This lack of correlation, however, does not imply that the approximately 1.9 Ga atmosphere-ocean system was anoxic. Depletion of these elements from the Ramah Group sediments may have occurred during diagenesis.

Non-NASA Center↗

NASA NTRS1994

(abstract) Transmission Electron Microscopy of Al(sub x)Ga(sub 1-x)N/SiC Multilayer Structures Grown on Sapphire Substrates

The potential of wide-band-gap III-V nitrides as ultraviolet sensors and light emitters has prompted an increasing amount of work recently, including the fabrication of the first UV sensors from as-deposited single crystal GaN. We have used high resolution transmission electron microscopy (TEM) to study the microstructure of two novel developments of wide-band-gap III-V nitrides: the growth of ultra-short period GaN/AlN superlattices; and the incorporation of SiC layers into Al(sub x)Ga(sub 1-x)N structures. By varying the relative periods in a GaN/AlN superlattice, the band gap of the composite can be tailored to lie between the elemental values of 365 nm for GaN and 200 nm for AlN. The group IV semiconductor, SiC, has a wide band-gap and has a close lattice match (less than 3 %) to Al(sub x)Ga(sub 1-x)N for growth on the basal plane. Demonstration of epitaxial growth for Al(sub x)Ga(sub 1-x)N/SiC multilayers would introduce a wide band-gap analog to the already existing family of III-V and Si(sub 1-x)Ge(sub x) heteroepitaxial growth systems. Although good quality growth of GaN on SiC substrates has been demonstrated, Al(sub x)Ga(sub 1-x)N/SiC multilayer structures have never been grown and the interfacial structure is unknown.

GaN AlN GaN/AlN↗

NASA NTRS2006

Alpha-Voltaic Sources Using Liquid Ga as Conversion Medium

A family of proposed miniature sources of power would exploit the direct conversion of the kinetic energy of alpha particles into electricity. In addition to having long operational lives, these sources are expected to operate with energy-conversion efficiencies from 70 to 90 percent. A power source as proposed (see figure) would be an electrolytic cell in which liquid gallium would serve as both an electrolyte and an energy-conversion medium. The cell would contain an iridium cathode and a zirconium anode. The alpha particles, each with a kinetic energy approx.5.8 MeV, would be emitted by radioactive decay of Cm-244, which has a half-life of 18 years. The Cm-244 source would be positioned so that the a particles would enter the liquid gallium, where their kinetic energy would be dissipated mostly through ionization of Ga atoms, creating Ga(+) ions and free electrons. The electrons would be collected by iridium cathode, and the Ga(+) ions would be neutralized at the zirconium cathode by electrons returning after flowing through an external circuit. Gallium is a candidate for use as the electrolyte and the energy-conversion medium because in the liquid state it is a semimetal: its electrical conductivity is greater than that of a typical semiconductor but small in comparison with the conductivities of metals. Consequently, in liquid gallium, electrons and Ga(+) can exist without immediate recombination and can be moved by electric fields. It is expected that electric fields, resulting at least partly from the difference between the work functions of the electrode metals, would move the electrons and ions to their respective electrodes. The open-circuit potential of the cell is expected to be 1.62 V - equal to the difference between the work functions of iridium and zirconium. Unlike in a solid-state energy conversion medium, the impingement of energetic a particles would not give rise to displacement damage in the liquid gallium. Hence, the cell should have a long life, limited only by the half-life of Cm-244. A cell having a volume less than 25 cu mm, containing 1 curie of Cm-244 (the curie is a unit of radioactivity equal to 3.7 10(exp 10) disintegrations per second) is expected to deliver a current between 7 and 12 mA, which, at the expected open-circuit potential, would provide a power in the approximate range of 11 to 20 mW.

Patel, Jagdish U.↗

NASA NTRS2003

Study of Dislocation-Ordered In(x)Ga(1-x)As/GaAs Quantum Dots

A report describes an experimental study of dislocation-induced spatial ordering of quantum dots (QDs) comprising nanometer-sized In(x)Ga(1-x)As islands surrounded by GaAs. Metastable heteroepitaxial structures were grown by molecular-beam epitaxy of In(x)Ga(1-x)As onto n+ GaAs and semi-insulating GaAs substrates. Then the structures were relaxed during a post-growth annealing/self-organizing process leading to the formation of surface undulations that acted as preferential sites for the nucleation of QDs. Structural effects of annealing times and temperatures on the strain-relaxed In(x)Ga(1-x)As/GaAs and the subsequent spatial ordering of the QDs were analyzed by atomic-force microscopy and transmission electron microscopy. Continuous-wave spectral and time-resolved photoluminescence (PL) measurements were performed to study the effects, upon optical properties, of increased QD positional ordering, increased QD uniformity, and proximity of QDs to arrays of dislocations. PL spectral peaks of ordered QD structures formed on strain-relaxed In(x)Ga(1-x)As/GaAs layers were found to be narrower than those of structures not so formed and ordered. Rise and decay times of time-resolved PL were found to be lower at lower temperatures -- apparently as a consequence of decreased carrier-transport times within the barriers surrounding the QDs.

Leon, Rose↗

NASA NTRS1988

Electron beam source molecular beam epitaxial growth of analog graded Al(x)Ga(1-x)As ballistic transistors

A new method has been developed for the growth of graded band-gap Al(x)Ga(1-x)As alloys by molecular beam epitaxy which is based upon electron beam evaporation of the group III elements. The metal fluxes are measured and feedback controlled using a modulated ion gauge sensor. The system is computer controlled which allows precise programming of the Ga and Al evaporation rates. The large dynamic response of the metal sources enables growth of variable band-gap III-V alloys with arbitrary composition profiles. This new technique is demonstrated by synthesis of analog graded Al(x)Ga(1-x)As unipolar ballistic electron transistors.

Malik, Roger J.↗

NASA NTRS1990

(Ar-39)-(Ar-40) dating of mesosiderites - Evidence for major parent body disruption less than 4 Ga ago

The (Ar-39) (Ar-40) chronologies were determined for 14 different mesosiderites representing the full range of classification according to recrystallization, and these chronologies were compared with analogous data for other meteorite types and for lunar highland rocks. Results of Ar-Ar chronologies indicate the history of a degassing of Ar due to a major thermal event that occurred less than 3.9 Ga ago; this event is not the metal-silicate mixing event, which is known to have occurred earlier than 4.4 Ga ago. It is suggested that a major collisional disruption-reassembly event less than 3.9 Ga ago took place, leaving the metal-silicate breccias buried under tens of kilometers of rubble, where they cooled slowly through the Ar closure temperatures.

Bogard, D. D.↗

NASA NTRS1992

The growth and characterization of Al(x)Ga(1-x)As/Ge heterostructures

The effects of the growth temperature and the Al(x)Ga(1-x)As layer thickness on the structural, optical, and electrical properties of Al(x)Ga(1-x)As/Ge heterostructures grown for photovoltaic applications were investigated using different-thickness (between 1 micron and 5 microns) Al(x)Ga(1-x)As layers grown by MOCVD in the temperature range between 660 and 780 C. Results obtained from double-crystal X-ray rocking curve measurements, electron beam induced current, cross-sectional TEM, Raman spectroscopy, SIMS, and steady-state and time-resolved photoluminescence measurements are presented. It was found that the highest minority carrier lifetime, 2.41 ns, was obtained for T(G) = 780 C, but the lowest interfacial recombination velocity, 1.6 x 10 exp 4, was obtained at 660 C.

Choi, S. W.↗

NASA NTRS1992

Reflection high-energy electron diffraction study of growth and interface formation of the Ga(1-x)In(x)Sb/InAs strained-layer superlattices

Reflection high-energy electron diffraction (RHEED) during molecular beam epitaxy is used to study the growth and interface formation of the Ga(1-x)In(x)Sb/InAs (x is not greater than 0.4) strained-layer superlattices (SLSs) on GaSb(100) substrates. A number of surface atomic structures were observed in the growth of the SLS: a (1 x 3) phase from the InAs epilayer surface, a (2 x 3) phase, a (2 x 4) phase, and diffuse (1 x 1)-like phases from the InAs epilayer surface. It is suggested that the long-range order quality of the interface of Ga(1-x)In(x)Sb on InAs may be better than that of the interface of InAs on Ga(1-x)In(x)Sb, but the abruptness of the interfaces would still be compatible. The RHEED intensity variations in the formation of the interfaces are discussed in terms of interface chemical reactions.

Fan, W. C.↗

NASA NTRS2001

Partial Pressures of Te2 and Thermodynamic Properties of Ga-Te System

The partial pressures of Te2 in equilibrium with Ga(1-x)Te(x) samples were measured by optical absorption technique from 450 to 1100 C for compositions, x, between 0.333 and 0.612. To establish the relationship between the partial pressure of Te, and the measured optical absorbance, the calibration runs of a pure Te sample were also conducted to determine the Beer's Law constants. The partial pressures of Te2 in equilibrium with the GaTe(s) and Ga2Te3(s)compounds, or the so-called three-phase curves, were established. These partial pressure data imply the existence of the Ga3Te4(s) compound. From the partial pressures of Te2 over the Ga-Te melts, partial molar enthalpy and entropy of mixing for Te were derived and they agree reasonable well with the published data. The activities of Te in the Ga-Te melts were also derived from the measured partial pressures of Te2. These data agree well with most of the previous results. The possible reason for the high activity of Te measured for x less than 0.60 is discussed.

Su, Ching-Hua↗

NASA NTRS2005

Hadean Crustal Processes Revealed from Oxygen Isotopes and U-Th-Pb Depth Profiling of Pre-4.0 Ga Detrital Zircons from Western Australia

Because physical and chemical processes of the past are determined from analysis of a preserved geologic record, little is known about terrestrial crustal processes of the first 500 Ma during the so-called Hadean Eon. What is known from direct measurements has been derived almost exclusively from the study of greater than 4.0 Ga detrital zircons from the Jack Hills, Western Australia. The geochemistry of these zircons has direct application to understanding the origin and evolution of the rocks during the Hadean because: (i) U-Th-Pb age determinations by ion microprobe suggests the presence of crust as early as 4.37 Ga, or shortly after lunar formation; (ii) high-resolution U-Th-Pb zircon depth profiles reported here reveal several episodes of zircon growth in the Hadean previously unrecognized; (iii) core regions of pre-4.0 Ga zircons with igneous compositions are enriched in O-18 and contain metaluminous and peraluminous mineral inclusions, both features indicative of S-type grainitod protoliths. Study of these ancient zircons provides a unique window into the first half billion years that permits assessment of the potential of the Hadean Earth to host an emergent biosphere.

Trail, D.↗