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Low-power step-recovery-diode frequency multiplier generates 361-MHz signal. Diode conducts when ac waveform is positive at its upper terminal. When voltage is negative, diode continues to conduct stored charge in its junction.
A 1.6-THz power-combined Schottky frequency tripler was designed to handle approximately 30 mW input power. The design of Schottky-based triplers at this frequency range is mainly constrained by the shrinkage of the waveguide dimensions with frequency and the minimum diode mesa sizes, which limits the maximum number of diodes that can be placed on the chip to no more than two. Hence, multiple-chip power-combined schemes become necessary to increase the power-handling capabilities of high-frequency multipliers. The design presented here overcomes difficulties by performing the power-combining directly on-chip. Four E-probes are located at a single input waveguide in order to equally pump four multiplying structures (featuring two diodes each). The produced output power is then recombined at the output using the same concept.
Detection and measurement of cycle skipping and phase offsets in frequency multiplying phase-lock filters
A novel MMIC on-chip power-combined frequency multiplier device and a method of fabricating the same, comprising two or more multiplying structures integrated on a single chip, wherein each of the integrated multiplying structures are electrically identical and each of the multiplying structures include one input antenna (E-probe) for receiving an input signal in the millimeter-wave, submillimeter-wave or terahertz frequency range inputted on the chip, a stripline based input matching network electrically connecting the input antennas to two or more Schottky diodes in a balanced configuration, two or more Schottky diodes that are used as nonlinear semiconductor devices to generate harmonics out of the input signal and produce the multiplied output signal, stripline based output matching networks for transmitting the output signal from the Schottky diodes to an output antenna, and an output antenna (E-probe) for transmitting the output signal off the chip into the output waveguide transmission line.
Equivalent circuit evaluation of theoretical potential and limitations of millimeter wave semiconductor diode detectors, mixers and frequency multipliers
Experimental circuit produces an efficient fractional frequency multiplier that will operate on a 5.6 mw, 2101.8 MHz input signal to achieve an output-to-input frequency ratio of 240/221. Step-recovery diodes used in all frequency-changing stages result in a coherent offset frequency.
Design, packaging, circuitry, and testing of solid state superhigh frequency transmitter using step recovery diode frequency multiplier
A novel split-waveguide mount for millimeter and submillimeter wave frequency multipliers and harmonic mixers is presented. It consists of only two pieces, block halves, which are mirror images of each other.
A novel all-planar quasi-optical schottky varactor diode frequency doubler has been fabricated and has produced more than 1 mW of output power at 600 GHz with an approximately 2 percent conversion efficiency.
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We designed and fabricated a fix-tuned balanced frequency tripler working in the 260-340 GHz band to be the first stage of a x3x3x3 multiplier chain to 2.7 THz. The design of a dual-chip version of this multiplier featuring an input splitter / output combiner as part of the input / output matching networks of both chips - with no degradation of the expected bandwidth and efficiency- will be presented.
Models for optimization of planar frequency triplers with symmetrical C-V curves are presented. Role and limitation of various blocking barriers (oxide, Mott, heterojunction) are discussed. Devices with undoped drift regions (BIN) have moderate efficiency but a broad range of power operation, whereas devices with doped drift regions (BNN) have high efficiency in a narrow power window. In particular, an upper power limit of the BNN is caused by electron velocity saturation. Implementations in SiO2/Si and AlAs/GaAs and means for increasing the power of BNN structures are considered.
A solid state device chip including diodes (generating a higher frequency output through frequency multiplication of the input frequency) and a novel on-chip power combining design. Together with the on-chip power combining, the chip has increased efficiency because the diodes' anodes, being micro-fabricated simultaneously on the same patch of a GaAs wafer under identical conditions, are very well balanced. The diodes' GaAs heterostructure and the overall chip geometry are designed to be optimized for high power operation. As a result of all these features, the device can generate record-setting power having a signal frequency in the F-band and W-band (30% conversion efficiency).
Double-barrier quantum-well GaAs diode achieved 0.61 percent efficiency as frequency tripler when operated at input frequency of 63.7 GHz, nearly one-tenth cutoff frequency of diode. Efficiency increased with drive level up to maximum input power available, 40 mW. Diodes studied for use in local-oscillator chains in microwave radiometers. Potential applications include spectrometers and radar.
In this paper, we present a novel quasi-optical all-planar frequency doubler that could provide an alternative approach to conventional waveguide circuits for millimeter- and submillimeter-wave signal generation. By utilizing a quad-bridge-diode configuration, we are able to isolate the input and the output circuits without the use of complicated filter structures.
We have developed and tesed a number of fixed-tuned GaAs Schottky diode frequency doubler and tripler designs covering over 50 percent of the 100 - 2000 GHz band, with best measured 120 K peak efficiencies ranging from 39 percent for 190 GHz doubler to 0.94 percent for a 1800 GHz tripler.
Investigation into the uses of step-recovery diodes /SRD's/ leads to the development of necessary circuitry for using fast current-switching capabilities of SRD's in frequency multiplication, the design of solid-state X-band transmitters employing SRD multipliers, and the use of SRD multipliers in a phased-array receiving antenna.
Wall-level CW solid-state sources in the millimeter-wave region are needed for plasma diagnostics. Monolithic metal-grid arrays containing in excess of 1000 Schottky diodes have produced watt-level output at 66 GHz in a doubler configuration, in excellent agreement with the large-signal predictions of the frequency multiplication. Current efforts are concentrated on fabricating and developing arrays of a novel barrier-intrinsic-N+ (BIN) diode which promise increased performance in a tripler configuration. Initial tests will be made for a configuration where a tripling efficiency of 35 percent at an output frequency of 100 GHz is predicted. Eventual goals are monolithic BIN diode grids operating at 1 THz.