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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Pulsed laminar falling films in vertical tubes: Maintaining a continuous liquid film with reduced film thickness

Falling-liquid-film heat transfer is important to a wide variety of industrial applications, including two-phase thermosyphons, falling-film evaporators in the food industry, heat exchangers in fuel-ethanol processing, and the chemical service industry. Particularly for laminar falling films, the heat transfer increases as the film thickness decreases, hence it is desirable to keep the films as thin as possible. This article presents a periodically-pulsed flow concept to reduce the average mass flow inside a vertical tube. The technique provides thinner films than can be achieved with continuous flow. A drainage model is adopted to predict the film thickness as a function of flow rate and location along the tube. The concept is confirmed experimentally by measuring the film thickness in real time in a circular tube using a laser-based absorption technique. A new heat-transfer-based film continuity measurement is also integrated into the optical film measurement setup. Water at ambient temperature and pressure is used for this work. Film thickness reductions of up to 60%, and liquid-film volume-flow reductions of up to 80% compared to the minimum continuous-flow film have been obtained. The time-varying film thickness profile can also be controlled to a limited extent, which may be of interest for process industries.

42 ENGINEERING↗
DOE OSTI2014

Electronic and magnetic properties of manganite thin films with different compositions and its correlation with transport properties: An X-ray resonant magnetic scattering study

Here, we present x-ray resonant magnetic dichroism and x-ray resonant magnetic scattering measurements of the temperature dependence of magnetism in Pr-doped La-Ca-Mn-O films grown on (110) NdGaO{sub 3} substrates. We observed thermal hysteresis of the ferromagnetism in one film that also showed large thermal hysteresis of ∼18 K in transport measurements. While in a second film of a different nominal chemistry, which showed very small thermal hysteresis ∼3 K in transport measurements, no thermal hysteresis of the ferromagnetism was observed. These macroscopic properties are correlated with evolution of surface magnetization across metal insulator transition for these films as observed by soft x-ray resonant magnetic scattering measurements.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Electron-stimulated reactions in nanoscale water films adsorbed on (alpha)-Al2O3(0001)

The radiation-induced decomposition and desorption of nanoscale amorphous solid water (D2O) films adsorbed on -Al2O3(0001) surface was studied at low temperature in ultrahigh vacuum using temperature programmed desorption (TPD) and electron stimulated desorption (ESD) with a mono-energetic, low energy electron source. ESD yields of molecular products ( D2, O2 and D¬2O) and the total sputtering yield increased with increasing D2O coverage up to ~15 water monolayers (i.e. ~15 1015 cm-2) to a coverage-independent level for thicker water films. Experiments with isotopically-layered water films (D2O and H2O) demonstrated that the highest water decomposition yields occurred at the interfaces of the nanoscale water films with the alumina substrate and vacuum. However, the increased reactivity of the water/alumina interface is relatively small compared to the enhancements in the non-thermal reactions previously observed at the water/Pt(111) and water/TiO2(110) interfaces. We propose that the relatively low activity of Al2O3(0001) for the radiation-induced production of molecular hydrogen is associated with lower reactivity of this surface with hydrogen atoms, which are likely precursors for the molecular hydrogen.

Petrik, Nikolay G.↗
DOE OSTI2012

Radio-frequency superimposed direct current magnetron sputtered Ga:ZnO transparent conducting thin films

The utilization of radio-frequency (RF) superimposed direct-current (DC) magnetron sputtering deposition on the properties of gallium doped ZnO (GZO) based transparent conducting oxides has been examined. The GZO films were deposited using 76.2 mm diameter ZnO:Ga{sub 2}O{sub 3} (5 at. % Ga vs. Zn) ceramic oxide target on heated non-alkaline glass substrates by varying total power from 60 W to 120 W in steps of 20 W and at various power ratios of RF to DC changing from 0 to 1 in steps of 0.25. The GZO thin films grown with pure DC, mixed approach, and pure RF resulted in conductivities of 2200 {+-} 200 S/cm, 3920 {+-} 600 S/cm, and 3610 {+-} 400 S/cm, respectively. X-ray diffraction showed all films have wurtzite ZnO structure with the c-axis oriented perpendicular to the substrate. The films grown with increasing RF portion of the total power resulted in the improvement of crystallographic texture with smaller full-width half maximum in {chi} and broadening of optical gap with increased carrier concentration via more efficient doping. Independent of the total sputtering power, all films grown with 50% or higher RF power portion resulted in high mobility ({approx}28 {+-} 1 cm{sup 2}/Vs), consistent with observed improvements in crystallographic texture. All films showed optical transmittance of {approx}90% in the visible range.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Theory of activated glassy relaxation, mobility gradients, surface diffusion, and vitrification in free standing thin films

We have constructed a quantitative, force level, statistical mechanical theory for how confinement in free standing thin films introduces a spatial mobility gradient of the alpha relaxation time as a function of temperature, film thickness, and location in the film. The crucial idea is that relaxation speeds up due to the reduction of both near-surface barriers associated with the loss of neighbors in the local cage and the spatial cutoff and dynamical softening near the vapor interface of the spatially longer range collective elasticity cost for large amplitude hopping. These two effects are fundamentally coupled. Quantitative predictions are made for how an apparent glass temperature depends on the film thickness and experimental probe technique, the emergence of a two-step decay and mobile layers in time domain measurements, signatures of confinement in frequency-domain dielectric loss experiments, the dependence of film-averaged relaxation times and dynamic fragility on temperature and film thickness, surface diffusion, and the relationship between kinetic experiments and pseudo-thermodynamic measurements such as ellipsometry.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Single-layer nano-carbon film, diamond film, and diamond/nano-carbon composite film field emission performance comparison

A series of single-layer nano-carbon (SNC) films, diamond films, and diamond/nano-carbon (D/NC) composite films have been prepared on the highly doped silicon substrate by using microwave plasma chemical vapor deposition techniques. The films were characterised by scanning electron microscopy, Raman spectroscopy, and field emission I-V measurements. The experimental results indicated that the field emission maximum current density of D/NC composite films is 11.8–17.8 times that of diamond films. And the field emission current density of D/NC composite films is 2.9–5 times that of SNC films at an electric field of 3.0 V/μm. At the same time, the D/NC composite film exhibits the advantage of improved reproducibility and long term stability (both of the nano-carbon film within the D/NC composite cathode and the SNC cathode were prepared under the same experimental conditions). And for the D/NC composite sample, a high current density of 10 mA/cm{sup 2} at an electric field of 3.0 V/μm was obtained. Diamond layer can effectively improve the field emission characteristics of nano-carbon film. The reason may be due to the diamond film acts as the electron acceleration layer.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Microstructure tuning facilitated photo-efficiency enhancement and environmental benign nature of HfO2/Mo/HfO2 multilayer films

Nano-layered, multilayered ?lms consisting of HfO2(dielectric)/Mo(metal)/HfO2(dielectric), (D/M/D archi-tecture) with controlled layer thickness, chemistry and microstructure were demonstrated for e?cient utiliza-tion of solar energy with well-designated spectral control. The e?ect of Mo metal interlayer on the energy performance and e?ciency of HfO2/Mo/HfO2 multilayer ?lms made by electron-beam deposition onto silicon and glass substrates has been evaluated. The Mo interlayer thickness [Mo(t)] was varied in the range of 5–25 nm while the top/bottom HfO2 layer thickness was kept constant at ~50 nm. Structural, morphological and optical characterization was performed to understand the e?ect of Mo(t) induced microstructure on mechanical dur-ability and optical behavior of the D/M/D multilayer ?lms. Structural studies revealed that D/M/D multilayer ?lms with relatively low Mo(t) were amorphous, while higher Mo(t) induces the amorphous-to-nanocrystalline microstructure transformation, which also induces surface roughening e?ects. The D/M/D multilayer ?lm with Mo(t) = 20 nm, where the nano-columnar morphology of the D-M-D layers are aligned perpendicular to the substrate surface and exhibits the optimum spectral selectivity. Such microstructure and morphological tailoring also facilitates the environmentally friendly (self-cleaning/stain repellent) nature of these multilayer ?lms by the high contact angle (~102°) achieved. Molybdenum interlayer facilitated higher contact angle leads to super-hydrophobic nature of the HfO2/Mo/HfO2 multilayered ?lm surfaces. The low surface roughness values (0.2–0.8 nm), which are primarily due to Mo at the interface, of the HfO2/Mo/HfO2 multilayered ?lms satisfy the general requirements of heat mirror applications. In addition, the microstructure of intermediate Mo layer and HfO2-Mo interfaces signi?cantly control the mechanical properties of D/M/D multilayer ?lms. Optimal me-chanical properties (hardness = 30 GPa, elastic modulus = 312 GPa, wear resistance = 0.094, adhesion strength = 2050 µN) have been obtained for Mo(t) = 20 nm D/M/D multilayer ?lm. The mechanical response strongly supports ?exible and wear resistive nature of HfO2/Mo/HfO2 multilayer ?lms.

Dubey, P↗
DOE OSTI2014

Misfit layered Ca{sub 3}Co{sub 4}O{sub 9} as a high figure of merit p-type transparent conducting oxide film through solution processing

Ca{sub 3}Co{sub 4}O{sub 9} thin films synthesized through solution processing are shown to be high-performing, p-type transparent conducting oxides (TCOs). The synthesis method is a cost-effective and scalable process that consists of sol-gel chemistry, spin coating, and heat treatments. The process parameters can be varied to produce TCO thin films with sheet resistance as low as 5.7 kΩ/sq (ρ ≈ 57 mΩ cm) or with average visible range transparency as high as 67%. The most conductive Ca{sub 3}Co{sub 4}O{sub 9} TCO thin film has near infrared region optical transmission as high as 85%. The figure of merit (FOM) for the top-performing Ca{sub 3}Co{sub 4}O{sub 9} thin film (151 MΩ{sup −1}) is higher than FOM values reported in the literature for all other solution processed, p-type TCO thin films and higher than most others prepared by physical vapor deposition and chemical vapor deposition. Transparent conductivity in misfit layered oxides presents new opportunities for TCO compositions.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Epitaxial c-axis oriented BaTiO{sub 3} thin films on SrTiO{sub 3}-buffered Si(001) by atomic layer deposition

Atomic layer deposition (ALD) of epitaxial c-axis oriented BaTiO{sub 3} (BTO) on Si(001) using a thin (1.6 nm) buffer layer of SrTiO{sub 3} (STO) grown by molecular beam epitaxy is reported. The ALD growth of crystalline BTO films at 225 °C used barium bis(triisopropylcyclopentadienyl), titanium tetraisopropoxide, and water as co-reactants. X-ray diffraction (XRD) reveals a high degree of crystallinity and c-axis orientation of as-deposited BTO films. Crystallinity is improved after vacuum annealing at 600 °C. Two-dimensional XRD confirms the tetragonal structure and orientation of 7–20-nm thick films. The effect of the annealing process on the BTO structure is discussed. A clean STO/Si interface is found using in-situ X-ray photoelectron spectroscopy and confirmed by cross-sectional scanning transmission electron microscopy. The capacitance-voltage characteristics of 7–20 nm-thick BTO films are examined and show an effective dielectric constant of ∼660 for the heterostructure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Epitaxial Fe3-xTixO4 films from magnetite to ulvöspinel by pulsed laser deposition

Epitaxial films along the Fe3-xTixO4 (titanomagnetite) compositional series from pure end-members magnetite (Fe3O4) to ulvöspinel (Fe2TiO4) were successfully grown by pulsed laser deposition on MgO(100) substrates. Spectroscopic characterization including high resolution x-ray diffraction, x-ray photoelectron spectroscopy, and synchrotron-based x-ray absorption and magnetic circular dichroism consistently shows that Ti(IV) substitutes for Fe(III) in the inverse spinel lattice with a proportional increase in lattice Fe(II) concentration. No evidence of Ti interstitials, spinodal decomposition, or secondary phases was found in the bulk of the grown films. At the uppermost few nanometers of the Ti-bearing film surfaces, evidence suggests that Fe(II) is susceptible to facile oxidation, and that an associated lower Fe/Ti ratio in this region is consistent with surface compositional incompleteness or alteration to a titanomaghemite-like composition and structure. The surface of these films nonetheless appear to remain highly ordered and commensurate with the underlying structure despite facile oxidation, a surface condition that is found to be reversible to some extent by heating in low oxygen environments.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Enhancement and Tunability of Near-Field Radiative Heat Transfer Mediated by Surface Plasmon Polaritons in Thin Plasmonic Films

The properties of thermal radiation exchange between hot and cold objects can be strongly modified if they interact in the near field where electromagnetic coupling occurs across gaps narrower than the dominant wavelength of thermal radiation. Using a rigorous fluctuational electrodynamics approach, we predict that ultra-thin films of plasmonic materials can be used to dramatically enhance near-field heat transfer. The total spectrally integrated film-to-film heat transfer is over an order of magnitude larger than between the same materials in bulk form and also exceeds the levels achievable with polar dielectrics such as SiC. We attribute this enhancement to the significant spectral broadening of radiative heat transfer due to coupling between surface plasmon polaritons (SPPs) on both sides of each thin film. We show that the radiative heat flux spectrum can be further shaped by the choice of the substrate onto which the thin film is deposited. In particular, substrates supporting surface phonon polaritons (SPhP) strongly modify the heat flux spectrum owing to the interactions between SPPs on thin films and SPhPs of the substrate. The use of thin film phase change materials on polar dielectric substrates allows for dynamic switching of the heat flux spectrum between SPP-mediated and SPhP-mediated peaks

42 ENGINEERING↗
DOE OSTI2014

Highly Textured Tin(II) Sulfide Thin Films Formed from Sheetlike Nanocrystal Inks

Highly textured tin(II) sulfide thin films are prepared from a nanocrystal ink comprised of high-aspect-ratio nanosheets. The orthorhombic nanosheets are synthesized colloidally to isolate lateral growth and minimize the presence of alternate crystal phases. The tin sulfide films deposited from the nanosheets exhibit pure elemental composition, micrometer-sized grains, and a remarkable degree of texturing. The films consist of lamellar stacking of nanosheets with some intercalation, and the average sheet thickness is ~30 nm. The SnS films have an indirect band gap of 1.23 eV, and density functional theory calculations indicate minimal quantum confinement contributions. The anisotropic electronic properties of tin sulfide are greatly intensified in films formed by this process, yielding an in-plane mobility of 5.7 cm 2 /(V s) but an out-of-plane resistivity as high as 30 kΩ cm. This work represents a new strategy for nanocrystal inks in which the nanocrystal morphology is tailored to direct film orientation, grain size, and transport properties. The method provides a route for the deposition of high-quality, layered semiconductor thin films with applications in photovoltaics and two-dimensional (2-D) electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Band gap of epitaxial in-plane-dimerized single-phase NbO{sub 2} films

We demonstrate the epitaxial growth of high quality crystalline phase-pure NbO{sub 2} films on various oxide substrates using molecular beam epitaxy. Using a combination of reflection high-energy electron diffraction and x-ray diffraction we show that the films grow with the pseudo-rutile (100) orientation out of plane. The band gap of the NbO{sub 2} films is determined to be at least 1.0 eV using a combination of x-ray photoelectron spectroscopy and inverse photoelectron spectroscopy, in conjunction with hybrid density functional calculations of the density of states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Structural perturbations of epitaxial α-(Fe{sub 1−x}V{sub x}){sub 2}O{sub 3} thin films driven by excess oxygen near the surface

We examine the structure and composition of phase-pure epitaxial α-(Fe{sub 1−x}V{sub x}){sub 2}O{sub 3} thin films deposited on α-Al{sub 2}O{sub 3}(0001) substrates by oxygen-plasma-assisted molecular beam epitaxy for 0 ≤ x ≤ ∼0.5. The films crystallize in the corundum lattice, with vanadium substituting for iron throughout. Vanadium cations exhibit the expected 3+ charge state in the bulk, but exhibit higher valences nearer to the surface, most likely because of excess oxygen in interstitial sites near the surface. The extent of vanadium oxidation beyond the 3+ state is inversely proportional to x. The gradation of vanadium valence with depth has an impact on local bonding geometries, and could be highly significant in this material's efficiency as a photocatalyst.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗