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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Over 11% Efficient Eco-Friendly Kesterite Solar Cell: Effects of S-Enriched Surface of Cu2ZnSn(S,Se)4 Absorber and Band Gap Controlled (Zn,Sn)O Buffer

For high efficiency kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cell, CdS thin film was usually used as a buffer layer. However, due to the toxicity of Cd and pollution problems involved from the solution-based chemical bath deposition, eco-friendly high efficiency CZTSSe solar cell with Cd-free buffer is necessary. As an Cd-free buffer layer, we investigated (Zn,Sn)O (ZTO) film deposited by sputtering method. In order to achieve high power conversion efficiency, we controlled energy band gaps of CZTSSe absorber as well as ZTO buffer, which was required to optimize conduction band offset (CBO) between the absorber and the buffer and to increase open circuit voltage (Voc) and fill factor (FF). The CBO was optimized by controlling the band gap of ZTO. By varying the Sn/(Zn + Sn) ratio and its deposition temperature, band gap of ZTO was successfully adjusted. Experimental and computational calculation results showed that solar cell performance was strongly affected by the CBO between absorber and buffer. Besides CBO matching, larger band gap of ZTO improved short circuit current density (Jsc) with enhanced external quantum efficiency value in blue photon spectrum range. As an additional way to improve power conversion efficiency of solar cell, band graded CZTSSe absorber was developed by using spray-based two-step process. The sprayed CZTSSe film was engineered to have S-enriched surface, which makes surface band gap widened and surface passivated, and resultantly increases Voc, Jsc and fill factor (FF). By controlling band gaps of both CZTSSe absorber and ZTO buffer, we obtained 11.22% environment-friendly CZTSSe solar cell without MgF2 anti-reflection coating.

(Zn↗
DOE OSTI2023

Quasi-Random Multimetallic Nanoparticle Arrays

Here, this paper describes a nanofabrication procedure that can generate multiscale substrates with quasi-random microregions of nanoparticle arrays having different periodicities and metals. We combine cycles of large-area nanoparticle array fabrication with solvent-assisted wrinkle lithography to mask and etch quasi-random areas of prefabricated nanoparticles to control the fill factors of the arrays. The approach is highly flexible, and parameters, including nanoparticle size and material, array geometry, and fill factor, can be tailored independently. Multimetallic nanoparticle arrays can support surface lattice resonances at fill factors as low as 20% and can function as nanoscale cavities for lasing action with as few as 10% of the nanoparticles in an array. We demonstrated that multimetallic nanoparticle substrates that combine two or three arrays with different periodicities can exhibit lasing responses over visible and near-infrared wavelengths. Our work showcases the robust optical responses of multimetallic and periodic devices for broadband light manipulation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Theoretical phase diagram of two-component composite fermions in double-layer graphene

Theory predicts that double layer systems realize “two-component composite fermions,” which are formed when electrons capture both intra- and inter-layer vortices, to produce a wide variety of new strongly correlated liquid and crystal states as a function of the layer separation. Recent experiments in double layer graphene have revealed a large number of layer-correlated fractional quantum Hall states in the lowest Landau level, many of which have not been studied quantitatively in previous theoretical works. We consider the competition between various liquid and crystal states at several of these filling factors (specifically, the states at total filling factors ν = 3/7, 4/9, 6/11, 4/7, 3/5, 2/3, and 4/5) to determine the theoretical phase diagram as a function of the layer separation. We compare our results with experiments and identify various observed states. In particular, we show that at small layer separations the states at total fillings ν = 3/7 and ν = 3/5 are partially pseudospin polarized, where pseudospin refers to the layer index. For certain fractions, such as ν = 3/7, interlayer correlations are predicted to survive to surprisingly large interlayer separations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Interplay between fractional quantum Hall liquid and crystal phases at low filling

The nature of the state at low Landau-level filling factors has been a long-standing puzzle in the field of the fractional quantum Hall effect (FQHE). While theoretical calculations suggest that a crystal is favored at filling factors $\nu$≲1/6, experiments show, at somewhat elevated temperatures, minima in the longitudinal resistance that are associated with fractional quantum Hall effect at $\nu$ 1/7, 2/11, 2/13, 3/19, 1/9, 2/15, and 2/17, which belong to the standard sequences $\nu$ =n/(6n ± 1) and $\nu$=n/(8n ± 1). To address this paradox, we investigate the nature of some of the low-$\nu$ states, specifically $\nu$= 1/7, 2/13, and 1/9, by variational Monte Carlo, density matrix renormalization group, and exact diagonalization methods. We conclude that in the thermodynamic limit, these are likely to be incompressible fractional quantum Hall liquids, albeit with strong short-range crystalline correlations. Finally, this suggests a natural explanation for the experimentally observed behavior and a rich phase diagram that admits, in the low-disorder limit, a multitude of crystal-FQHE liquid transitions as the filling factor is reduced.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Optical leakage mitigation in ortho-mode transducer detectors for microwave applications

Ortho-mode transducers (OMT) are a commonly used method of coupling opti-cal signals between waveguides and on-chip circuitry and detectors. While the ideal OMT-waveguide coupling requires minimal disturbance to the waveguide, when used for mm-wave applications the waveguide is often slide though and the OMT probes inserted on a thin support membrane. This interface is a potential source of signal leakage and can lead to signal loss and experimental systematics (e.g. in CMB polarization experiments where lost signal can result in temperature to polarization leakage). Here we report on the development of new OMT- waveguide coupling structures with the goal of reducing leakage at the horn-to-detector-wafer interface. The pixel to pixel optical leakage due to the gap be-tween the coupling waveguide and the backshort is reduced by means of a protrusion that passes through the OMT membrane and connects the waveguide sections on each side of the wafer. High frequency electromagnetic simulations indicate that these protrusions can reduce optical leakage in the gap by ~80% percent, with a ~60% filling factor, respect to an ordinary OMT coupling without protrusion, using designs that are compatible with current fabrication processes. We describe the design of the new coupling structure including the impact of varying two key parameters: wafer to optical coupling gap and protrusion fill factor. Prototype devices have been designed that will characterize the performance of the new design using a relative measurement with varying filling factors. We describe the simulation setup and results, and present a chip layout and sample box designed to perform an initial measurement.

Detectors↗
DOE OSTI2023

Inverted organic tandem solar cells with a charge recombination stack employing spatially confined p-type electrical doping

We report on the application of solution-based p-type electrical doping using 12-molybdophosphoric acid hydrate (PMA) to the fabrication of organic tandem solar cells. Such a doping approach leads to a spatially confined vertical doping profile down to a limited depth from the surface of polymer films, thus allowing the hole-collecting component of the charge recombination stack to be embedded in the photoactive layer of the bottom sub-cell. This simplifies the device architecture by removing the need for an extra dedicated hole-collecting layer. It is shown that this novel charge recombination stack comprising a PMA-doped bottom photoactive layer and a trilayer of Ag/AZO/PEIE is compatible with a solution-processed top photoactive layer. Here, the fabricated inverted organic tandem solar cells exhibit an open-circuit voltage that is close to the sum of the open-circuit voltages of the individual sub-cells, and a fill factor that is close to the better fill factor of the two sub-cells.

14 SOLAR ENERGY↗
DOE OSTI2020

Particle-Hole Symmetry and the Fractional Quantum Hall Effect in the Lowest Landau Level

Here, we report on detailed experimental studies of a high-quality heterojunction insulated-gate field-effect transistor (HIGFET) to probe the particle-hole symmetry of the fractional quantum Hall effect (FQHE) states about half-filling in the lowest Landau level. The HIGFET is specially designed to vary the density of a two-dimensional electronic system under constant magnetic fields. We find in our constant magnetic field, variable density measurements that the sequence of FQHE states at filling factors ν = 1/3, 2/5, 3/7… and its particle-hole conjugate states at filling factors 1-ν = 2/3, 3/5, 4/7… have a very similar energy gap. Moreover, a reflection symmetry can be established in the magnetoconductivities between the ν and 1-ν states about half-filling. Our results demonstrate that the FQHE states in the lowest Landau level are manifestly particle-hole symmetric.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Interplay of superconducting, metallic, and crystalline states of composite fermions at 𝜈 = $\frac{1}{6}$ in wide quantum wells

Evidence for developing fractional quantum Hall effect (FQHE) at filling fraction 𝜈 = 1/6 and 1/8 was recently reported in wide GaAs quantum wells [Wang et al., Phys. Rev. Lett. 134, 046502 (2025)]. In this article, we theoretically investigate the nature of the state at 𝜈 = 1/6 as a function of the quantum well width and the density by considering composite-fermion (CF) crystals, CF Fermi sea, and various kinds of paired CF states. The 𝑓-wave paired state has the lowest energy among the paired CF states. However, for parameters of interest, the energies of the CF crystal, the CF Fermi liquid, and the 𝑓-wave paired CF state are too close to distinguish. We, therefore, predict that 𝑖𝑓 the FQHE at 𝜈 = 1/6 is experimentally confirmed, this state would be an 𝑓-wave paired state of CFs, which can be verified by measurement of its thermal Hall conductance. Exact diagonalization studies on clean systems with up to eight electrons show that the ground states at 𝜈 = 𝑛/(6⁢𝑛 ± 1) are incompressible for all widths and densities we have considered, and are well described by the corresponding Laughlin and Jain states. We propose a phase diagram for large quantum well widths and densities in which at zero disorder, incompressible FQHE states are stabilized at 𝜈 = 𝑛/(6⁢𝑛 ± 1) and 𝜈 = 1/6, but in between these fillings the CF crystal is stabilized. We also present a qualitative discussion on the effects of disorder and propose a schematic phase diagram based on it. With disorder, which creates a spatial variation in the filling factor, two regimes are identified: (i) for small disorder, when the incompressible states percolate at the special fillings, FQHE with quantized Hall plateaus and vanishing longitudinal resistance should occur; and (ii) for larger disorder, when the CF crystal percolates, the longitudinal resistance rises with decreasing temperature but the domains of FQHE liquid produce minima at the special filling factors. Here, experiments are consistent with the latter scenario. We also mention a possible connection of the phase diagram presented here to a puzzling behavior observed for the fractional quantum anomalous Hall effect in pentalayer graphene.

Composite fermions↗
DOE OSTI2019

Resistivity anisotropy of quantum Hall stripe phases

In this work, quantum Hall stripe phases near half-integer filling factors $\nu$ $\geqslant$ 9/2 were predicted by Hartree-Fock (HF) theory and confirmed by discoveries of giant resistance anisotropies in high-mobility two dimensional electron gases. A theory of such anisotropy was proposed by MacDonald and Fisher, although they used parameters whose dependencies on the filling factor, electron density, and mobility remained unspecified. Here, we fill this void by calculating the hard-to-easy resistivity ratio as a function of these three variables. Quantitative comparison with experiment yields very good agreement, which we view as evidence for the “plain vanilla” smectic stripe HF phases

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Integer quantum Hall effect and enhanced g factor in quantum-confined Cd 3 As 2 films

Here, we investigate the integer quantum Hall effect in Cd 3 ⁢As 2 thin films under conditions of strong to moderate quantum confinement (thicknesses of 10, 12, and 15 nm). In all the films, we observe the integer quantum Hall effect in the spin-polarized lowest Landau level (filling factor v = 1) and at spin-degenerate higher index Landau levels with even filling factors (v = 2,4,6). With increasing quantum confinement, we also observe a lifting of the Landau-level spin degeneracy at v = 3, manifest as the emergence of an anomaly in the longitudinal and Hall resistivities. Tight-binding calculations show that the enhanced g factor likely arises from a combination of quantum confinement and corrections from nearby subbands.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Competing Zero-Field Chern Insulators in Superconducting Twisted Bilayer Graphene

The discovery of magic angle twisted bilayer graphene has unveiled a rich variety of superconducting, magnetic, and topologically nontrivial phases. Here, we show that the zero-field states at odd integer filling factors in h-BN nonaligned devices are consistent with symmetry broken Chern insulators, as is evidenced by the observation of the anomalous Hall effect near moiré cell filling factor ν = +1. The corresponding Chern insulator has a Chern number C = ±1 and a relatively high Curie temperature of T c ≈ 4.5 K. In a perpendicular magnetic field above B > 0.5 T we observe a transition of the ν = +1 Chern insulator from Chern number C = ±1 to C = 3, characterized by a quantized Hall plateau with R yx = h/3e 2 . These observations demonstrate that interaction-induced symmetry breaking leads to zero-field ground states that include almost degenerate and closely competing Chern insulators, and that states with larger Chern numbers couple most strongly to the B field. In addition, the device reveals strong superconducting phases with critical temperatures of up to T c ≈ 3.5 K. By providing the first demonstration of a system that allows gate-induced transitions between magnetic and superconducting phases, our observations mark a major milestone in the creation of a new generation of quantum electronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Uncovering the spin ordering in magic-angle graphene via edge state equilibration

Abstract The flat bands in magic-angle twisted bilayer graphene (MATBG) provide an especially rich arena to investigate interaction-driven ground states. While progress has been made in identifying the correlated insulators and their excitations at commensurate moiré filling factors, the spin-valley polarizations of the topological states that emerge at high magnetic field remain unknown. Here we introduce a technique based on twist-decoupled van der Waals layers that enables measurement of their electronic band structure and–by studying the backscattering between counter-propagating edge states–the determination of the relative spin polarization of their edge modes. We find that the symmetry-broken quantum Hall states that extend from the charge neutrality point in MATBG are spin unpolarized at even integer filling factors. The measurements also indicate that the correlated Chern insulator emerging from half filling of the flat valence band is spin unpolarized and suggest that its conduction band counterpart may be spin polarized.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Potential-induced degradation of Cu(In,Ga)Se 2 can occur by shunting the front i-ZnO and by damaging the p-n junction

In this work we test field-relevant potential-induced degradation (PID) behavior by encapsulating laboratory Cu(In,Ga)Se 2 (CIGS) solar cells and applying +1000 V uniformly on the face of the front glass. In this configuration, we find that K-rich borosilicate glass reduces the extent of PID relative to Na-rich soda-lime glass. We also find that the standard testing protocol of stressing cells at short-circuit leads to faster PID than stressing cells at open-circuit. We characterize two types of CIGS PID: The first, front shunting PID, is driven by front-glass stress and occurs when alkali metal cations accumulate in the i-ZnO buffer, where they increase shunt conductance to reduce fill factor. The second, p-n junction PID, results from back-glass stress as alkali metal cations pile up near the CIGS surface/CdS buffer, where they reduce charge carrier concentration, open-circuit voltage, and fill factor to degrade efficiency ~160 times faster than front shunting PID.

14 SOLAR ENERGY↗
DOE OSTI2023

Next-generation even-denominator fractional quantum Hall states of interacting composite fermions

The discovery of the fractional quantum Hall state (FQHS) in 1982 ushered a new era of research in many-body condensed matter physics. Among the numerous FQHSs, those observed at even-denominator Landau level filling factors are of particular interest as they may host quasiparticles obeying non-Abelian statistics and be of potential use in topological quantum computing. The even-denominator FQHSs, however, are scarce and have been observed predominantly in low-disorder two-dimensional (2D) systems when an excited electron Landau level is half filled. An example is the well-studied FQHS at filling factor ν = 5/2 which is believed to be a Bardeen-Cooper-Schrieffer-type, paired state of flux-particle composite fermions (CFs). Here, we report the observation of even-denominator FQHSs at ν = 3/10, 3/8, and 3/4 in the lowest Landau level of an ultrahigh-quality GaAs 2D hole system, evinced by deep minima in longitudinal resistance and developing quantized Hall plateaus. Quite remarkably, these states can be interpreted as even-denominator FQHSs of CFs, emerging from pairing of higher-order CFs when a CF Landau level, rather than an electron or a hole Landau level, is half-filled. Our results affirm enhanced interaction between CFs in a hole system with significant Landau level mixing and, more generally, the pairing of CFs as a valid mechanism for even-denominator FQHSs, and suggest the realization of FQHSs with non-Abelian anyons.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Correlated States of 2D Electrons near the Landau Level Filling ν = 1 / 7

The ground state of two-dimensional electron systems (2DESs) at low Landau level filling factors ( ν ≲ 1 / 6 ) has long been a topic of interest and controversy in condensed matter. Following the recent breakthrough in the quality of ultrahigh-mobility GaAs 2DESs, we revisit this problem experimentally and investigate the impact of reduced disorder. In a GaAs 2DES sample with density n = 6.1 × 10 10 / cm 2 and mobility μ = 25 × 10 6 cm 2 / V s , we find a deep minimum in the longitudinal magnetoresistance ( R x x ) at ν = 1 / 7 when T ≃ 104 mK . There is also a clear sign of a developing minimum in R x x at ν = 2 / 13 . While insulating phases are still predominant when ν ≲ 1 / 6 , these minima strongly suggest the existence of fractional quantum Hall states at filling factors that comply with the Jain sequence ν = p / ( 2 m p ± 1 ) even in the very low Landau level filling limit. The magnetic-field-dependent activation energies deduced from the relation R x x ∝ e E A / 2 k T corroborate this view and imply the presence of pinned Wigner solid states when ν ≠ p / ( 2 m p ± 1 ) . Similar results are seen in another sample with a lower density, further generalizing our observations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Correlated Double-Electron Additions at the Edge of a Two-Dimensional Electronic System

We create laterally large and low-disorder GaAs quantum-well-based quantum dots that act as small two-dimensional electron systems. We monitor tunneling of single electrons to the dots by means of capacitance measurements and identify single-electron capacitance peaks in the addition spectrum from occupancies of one up to thousands of electrons. The data show two remarkable phenomena in the Landau level filling factor range ν = 2 to ν = 5 in selective probing of the edge states of the dot: (i) Coulomb blockade peaks arise from the entrance of two electrons rather than one; (ii) at and near ν = 5/2 and at fixed gate voltage, these double-height peaks appear uniformly in a magnetic field with a flux periodicity of h/2e, but they group into pairs at other filling factors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Voltage-dependent excitation dynamics in UV-absorbing organic photovoltaics with efficient charge transfer exciton emission

Intermolecular charge-transfer excitons play a central role in determining the performance of organic solar cells as their voltage-dependent formation, dissociation, and recombination dynamics contribute to photocurrent generation, radiative/nonradiative voltage losses, and photovoltaic fill factor. Here, we explore the properties of brightly-emitting wide energy gap (>2 eV) charge transfer excitons by measuring the voltage-dependent photoluminescence, photocurrent, and ultrafast pump–probe transient absorption spectra of organic solar cells employing five UV-absorbing donor molecules that differ only by the length of the oligophenylene or acene group at their core. We find that organic solar cells with a strong correlation between their voltage-dependent photocurrent and charge-transfer exciton photoluminescence have low photovoltaic fill factors as they require voltage to facilitate efficient charge-transfer exciton dissociation. In contrast, solar cells that are efficient can readily generate charges without an applied field and have a separate population of tightly-bound charge-transfer excitons that are responsible for emission. Furthermore, considering that the sum of all excitation loss rates (i.e., recombination and charge extraction) must be equal to the excitation generation rate in the steady state, these voltage-dependent data allow us to solve for the voltage-dependent fate of all excitations in the solar cells and estimate upper and lower bounds for geminate and non-geminate recombination, respectively.

14 SOLAR ENERGY↗
DOE OSTI2022

Traps and transport resistance are the next frontiers for stable non-fullerene acceptor solar cells

Stability is one of the most important challenges facing material research for organic solar cells (OSC) on their path to further commercialization. In the high-performance material system PM6:Y6 studied here, we investigate degradation mechanisms of inverted photovoltaic devices. We have identified two distinct degradation pathways: one requires the presence of both illumination and oxygen and features a short-circuit current reduction, the other one is induced thermally and marked by severe losses of open-circuit voltage and fill factor. We focus our investigation on the thermally accelerated degradation. Our findings show that bulk material properties and interfaces remain remarkably stable, however, aging-induced defect state formation in the active layer remains the primary cause of thermal degradation. The increased trap density leads to higher non-radiative recombination, which limits the open-circuit voltage and lowers the charge carrier mobility in the photoactive layer. Furthermore, we find the trap-induced transport resistance to be the major reason for the drop in fill factor. Our results suggest that device lifetimes could be significantly increased by marginally suppressing trap formation, leading to a bright future for OSC.

14 SOLAR ENERGY↗