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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Ultrasonic investigation of the superconducting properties of the Nb-Mo system

The superconducting properties of single crystals of Nb and two alloys of Nb with Mo were investigated by ultrasonic techniques. The results of measurements of the ultrasonic attenuation and velocities as a function of temperature, Mo composition, crystallographic direction, and ultrasonic frequency are reported. The attenuation and small velocity changes associated with the superconductivity of the samples are shown to be dependent on the sample resistivity ratio which varied from 4.3 for Nb-9% Mo to 6500 for pure Nb. The ultrasonic attenuation data are analyzed in terms of the superconducting energy gap term of the BCS theory. A new model is proposed for the analysis of ultrasonic attenuation in pure superconductors with two partially decoupled energy bands. To analyze the attenuation in pure superconducting Nb, the existence of two energy gaps was assumed to be associated with the two partially decoupled energy bands. One of the gaps was found to have the normal BCS value of 3.4 and the other gap was found to have the anomalously large value of 10. No experimental evidence was found to suggest that the second energy gap had a different transition temperature. The interpretation of the results for the Nb-Mo alloys is shown to be complicated by the possible existence of a second superconducting phase in Nb-Mo alloys with a transition temperature of 0.35 of the transition temperature of the first phase. The elastic constants of Nb and Nb-Mo alloys are shown to be approximately independent of Mo composition to nine atomic percent Mo. These results do not agree with the current microscopic theory of transition temperature for the transition elements.

Lacy, L. L.↗
NASA NTRS2007

Energy Band Gap, Intrinsic Carrier Concentration and Fermi Level of CdTe Bulk Crystal between 304 K and 1067 K

Optical transmission measurements were performed on CdTe bulk single crystal. It was found that when a sliced and polished CdTe wafer was used, a white film started to develop when the sample was heated above 530 K and the sample became opaque. Therefore, a bulk crystal of CdTe was first grown in the window area by physical vapor transport; the optical transmission was then measured and from which the energy band gap was derived between 304 and 1067 K. The band gaps of CdTe can be fit well as a function of temperature using the Varshini expression: Eg (e V) = 1.5860 - 5.9117xl0(exp -4) T(sup 2)/(T + 160). Using the band gap data, the high temperature electron-hole equilibrium was calculated numerically by assuming the Kane's conduction band structure and a heavy-hole parabolic valance band. The calculated intrinsic carrier concentrations agree well with the experimental data reported previously. The calculated intrinsic Fermi levels between 270 and 1200 K were also presented.

Su, Ching-Hua↗
NASA NTRS1979

Surprisal analysis of rotational-translational energy transfer - Non-linear versus linear rotors

Surprisal versus energy gap analyses of state-to-state cross sections are presented for a number of linear rigid rotors excited by collisions with atoms for H2-H, H2-He, HCl-He, HCl-Ar, CO-He, CS-H2 (j=0) OCS-H2 (j=0) and HN2(+)-He, where (j=0) indicates that the hydrogen molecule was constrained to remain in its lowest level. Different systems exhibit wide variations in the slope of the surprisal plot and in certain cases, enough to indicate that the energy gap may not be the static dynamical constraint. Similar analyses are presented for nonlinear rotors excited by atoms for H2CO-He and H2O-He. For these, the data show a great deal of scatter, indicating that the reduced energy gap is probably not the appropriate independent variable.

Green, S.↗
NASA NTRS1984

Uncertainties about the physical electronics of n(+) and p(+) silicon, with applications for solar cells

After brief surveys of the significance of n(+) and p(+) silicon for the conversion efficiency of solar cells, the work in this paper is concentrated on uncertainties in the characterization of n(+) and p(+) regions. The topics treated include the quantum density states of the majority carrier band and the position of the Fermi level relative to the edge of this band, the resulting force field on the minority carriers accompanying a space dependence of the energy gap narrowing, and the interpretation of measurements of the energy gap narrowing and the minority carrier diffusivity and mobility. The treatment seeks to show how these uncertainties relate to solar cell design and to estimates of attainable conversion efficiency.

Lindholm, F. A.↗
NASA NTRS1985

Monolithic cascade-type solar cells

Solar cells consist of a semiconductor base, a bottom cell with a band-gap energy of E1, and a top cell with a band-gap energy of E2, and 0.96 E1 1.36 eV and (0.80 E + 0.77) eV E2 (0.80 E1 + 0.92) eV. A monolithic cascade-type solar cell was prepared with an n(+)-type GaAs base, a GaInAs bottom solar cell, and a GaAiInAs top solar cell. The surface of the cell is coated with a SiO antireflection film. The efficiency of the cell is 32%.

Yamamoto, S.↗
NASA NTRS2004

Electrical Conductivity of HgTe at High Temperatures

The electrical conductivity of HgTe was measured using a rotating magnetic field method from 300 K to the melting point (943 K). A microscopic theory for electrical conduction was used to calculate the expected temperature dependence of the HgTe conductivity. A comparison between the measured and calculated conductivities was used to obtain the estimates of the temperature dependence of Gamma(sub 6)-Gamma(sub 8) energy gap from 300 K to 943 K. The estimated temperature coefficient for the energy gap was comparable to the previous results at lower temperatures (less than or equal to 300 K). A rapid increase in the conductivity just above 300 K and a subsequent decrease at 500 K is attributed to band crossover effects. This paper describes the experimental approach and some of the theoretical calculation details.

Li, C.↗
NASA NTRS1977

Carrier generation, recombination, trapping, and transport in semiconductors with position-dependent composition

The spatial variation of the chemical composition of a semiconductor modifies the ideal one-electron energy band model as well as the Shockley equations for carrier recombination and transport in two important ways. The random component of the spatial variation introduces localized states in the energy gap by perturbing the band states. The nonrandom component gives rise to the position dependences of the conduction and valence band edges or the electron affinity and the energy gap. This paper gives the modifications of the Shockley equations from these two effects as well as an example of the steady-state recombination rate from distributed gap states in junction solar cells

Sah, C.-T.↗
NASA NTRS1990

InAs/Ga(1-x)In(x)Sb superlattices for infrared detector applications

The successful growth of InAs/Ga(1-x)In(x)Sb superlattices and their optical and structural characterization is discussed. Samples were grown by molecular beam epitaxy at fairly low substrate temperatures (less than 400 C). Structural quality was assessed by reflection high energy electron difrraction, transmission electron microscopy, and x ray diffraction. Excellent structures were achieved for growth on thick, strain relaxed GaSb buffer layers on GaAs substrates, despite a residual threading dislocation density of 10(exp 9)cm(exp -2) originating at the GaSb/GaAs interface. Despite a lattice mismatch of 1.7 percent, InAs/Ga(0.75)In(0.25)Sb superlattices are observed to be free of misfit dislocations at the thicknesses examined here, owing to the close lattice match between the superlattice and GaSb, which evenly distributes compressive and tensile stresses between the InAs and Ga(0.75)In(0.25)Sb layers. Photoluminescence and photoconductivity measurements indicate that the energy gaps of the strain-layer superlattices are smaller than those of InAs/GaSb superlattices with the same layer thicknesses, and are in agreement with the theoretical predictions of Smith and Mailhiot. Energy gaps of 80 to 250 meV (15 to 5 microns) have been measured for InAs/Ga(0.75)In(0.25)Sb superlattices with 45 to 25 A/25 A layer thickness. Results demonstrate that far-infrared cutoff wavelengths are compatible with the thin superlattice layers required for strong optical absorption in type-II superlattices.

Miles, Richard H.↗
NASA NTRS2007

Photonic Bandgap (PBG) Shielding Technology

Photonic Bandgap (PBG) shielding technology is a new approach to designing electromagnetic shielding materials for mitigating Electromagnetic Interference (EM!) with small, light-weight shielding materials. It focuses on ground planes of printed wiring boards (PWBs), rather than on components. Modem PSG materials also are emerging based on planar materials, in place of earlier, bulkier, 3-dimensional PBG structures. Planar PBG designs especially show great promise in mitigating and suppressing EMI and crosstalk for aerospace designs, such as needed for NASA's Constellation Program, for returning humans to the moon and for use by our first human visitors traveling to and from Mars. Photonic Bandgap (PBG) materials are also known as artificial dielectrics, meta-materials, and photonic crystals. General PBG materials are fundamentally periodic slow-wave structures in I, 2, or 3 dimensions. By adjusting the choice of structure periodicities in terms of size and recurring structure spacings, multiple scatterings of surface waves can be created that act as a forbidden energy gap (i.e., a range of frequencies) over which nominally-conductive metallic conductors cease to be a conductor and become dielectrics. Equivalently, PBG materials can be regarded as giving rise to forbidden energy gaps in metals without chemical doping, analogous to electron bandgap properties that previously gave rise to the modem semiconductor industry 60 years ago. Electromagnetic waves cannot propagate over bandgap regions that are created with PBG materials, that is, over frequencies for which a bandgap is artificially created through introducing periodic defects

Bastin, Gary L.↗
NASA NTRS1998

Development of SIS Mixers for 1 THz

SIS heterodyne mixer technology based on niobium tunnel junctions has now been pushed to frequencies over 1 THz, clearly demonstrating that the SIS junctions are capable of mixing at frequencies up to twice the energy gap frequency (4 Delta/h). However, the performance degrades rapidly above the gap frequency of niobium (2 Delta/h approx. 700 GHz) due to substantial ohmic losses in the on-chip tuning circuit. To solve this problem, the tuning circuit should be fabricated using a superconducting film with a larger energy gap, such as NbN; unfortunately, NbN films often have a substantial excess surface resistance in the submillimeter band. In contrast, the SIS mixer measurements we present in this paper indicate that the losses for NbTiN thin films can be quite low.

Zmuidzinas, J.↗
NASA NTRS1975

Solar cells for terrestrial applications

The power efficiency curves of photovoltaic solar cells were investigated as a function of the forbidden energy gap (E sub g) and the current-voltage characteristic of the diode. Minority carrier injection, depletion layer recombination, and interface recombination terms were considered in models for the I-V characteristic. The collection efficiency for photons with energy between (E sub g) and an upper energy cutoff (E sub w) was assumed to be 100% and zero otherwise. Results are presented in terms of a single parameter related to the ratio of depletion layer width and minority carrier diffusion length. It was found that increasing depletion layer recombination shifts the efficiency curves to larger values of the energy without changing the shape of the efficiency curve appreciably. It is believed that similar results would be obtained whenever the quality factors in the exponential energy gap and forward bias terms are equal.

Chernow, F.↗
NASA NTRS1977

Semiconductor sensors

A semiconductor sensor adapted to detect with a high degree of sensitivity small magnitudes of a mechanical force, presence of traces of a gas or light. The sensor includes a high energy gap (i.e., .about. 1.0 electron volts) semiconductor wafer. Mechanical force is measured by employing a non-centrosymmetric material for the semiconductor. Distortion of the semiconductor by the force creates a contact potential difference (cpd) at the semiconductor surface, and this cpd is determined to give a measure of the force. When such a semiconductor is subjected to illumination with an energy less than the energy gap of the semiconductors, such illumination also creates a cpd at the surface. Detection of this cpd is employed to sense the illumination itself or, in a variation of the system, to detect a gas. When either a gas or light is to be detected and a crystal of a non-centrosymmetric material is employed, the presence of gas or light, in appropriate circumstances, results in a strain within the crystal which distorts the same and the distortion provides a mechanism for qualitative and quantitative evaluation of the gas or the light, as the case may be.

Gatos, Harry C.↗
NASA NTRS1976

Effect of polarization on superfluidity in low density neutron matter

The singlet-state quasi-particle interaction in neutron matter is examined on the basis of results of a detailed evaluation of the Landau Fermi-liquid parameters for pure neutron effects, including polarization effects. This means that the interaction induced by exchange of density and spin-density excitations is taken into account. It is shown that polarization actually works to suppress the pairing matrix elements, owing to the spin dependence of the quasi-particle interaction and, ultimately, the balance of attraction, repulsion, and spin dependence in the fundamental two-neutron interaction. Since the isotropic energy gap and the condensation energy in low-density neutron-star matter are extremely sensitive functions of the pairing matrix elements, they will also be suppressed by the polarizability of the neutron medium.

Clark, J. W.↗
NASA NTRS1999

Growth of Homoepitaxial ZnO Semiconducting Films

As a high temperature semiconductor, ZnO has been used for many applications such as wave-guide, solar cells, and surface acoustic wave devices. Since the ZnO material has an energy gap of 3.3 eV at room temperature and an excitonic binding energy (60 meV) that is possible to make excitonic lasering at room temperature a recent surge of interest is to synthesize ZnO films for electro-optical devices. These applications require films with a smooth surface, good crystal quality, and low defect density. Homoepitaxial films have been studied in terms of morphology, crystal structure, and electrical and optical properties. ZnO single crystals are grown by the hydrothermal method. Substrates are mechanically polished and annealed in air for four hours before deposited films. The annealing temperature-dependence of ZnO substrates is studied. Films are synthesized by the off-axis reactive sputtering deposition. The films have very smooth surface with a roughness </= 5 nm on a 5 micrometers x 5 micrometers area. The full width at half maximum of film theta rocking curves measured by the x-ray diffraction is slightly larger than the crystal substrate. The film quality is determined by measuring the film resistivity, the Hall mobility, carrier densities and the energy band gap. The properties of ZnO films grown of (0001) ZnO and (0001) sapphire substrates will be also compared and discussed in the presentation.

Zhu, Shen↗
NASA NTRS2000

A semiempirical study for the ground and excited states of free-base and zinc porphyrin-fullerene dyads

The ground and excited states of a covalently linked porphyrin-fullerene dyad in both its free-base and zinc forms (D. Kuciauskas et al., J. Phys. Chem. 100 (1996) 15926) have been investigated by semiempirical methods. The excited-state properties are discussed by investigation of the character of the molecular orbitals. All frontier MOs are mainly localized on either the donor or the acceptor subunit. Thus, the absorption spectra of both systems are best described as the sum of the spectra of the single components. The experimentally observed spectra are well reproduced by the theoretical computations. Both molecules undergo efficient electron transfer in polar but not in apolar solvents. This experimental finding is explained theoretically by explicitly considering solvent effects. The tenth excited state in the gas phase is of charge-separated character where an electron is transferred from the porphyrin donor to the fullerene acceptor subunit. This state is stabilized in energy in polar solvents due to its large formal dipole moment. The stabilization energy for an apolar environment such as benzene is not sufficient to lower this state to become the first excited singlet state. Thus, no electron transfer is observed, in agreement with experiment. In a polar environment such as acetonitrile, the charge-separated state becomes the S, state and electron transfer takes place, as observed experimentally. The flexible single bond connecting both the donor and acceptor subunits allows free rotation by ca. +/- 30 degrees about the optimized ground-state conformation. For the charge-separated state this optimized geometry has a maximum dipole moment. The geometry of the charge-separated state thus does not change relatively to the ground-state conformation. The electron-donating properties of porphyrin are enhanced in the zinc derivative due to a reduced porphyrin HOMO-LUMO energy gap. This yields a lower energy for the charge-separated state compared to the free-base dyad.

Bridged Compounds/chemistry↗
NASA NTRS1995

Optimization of GaN thin films via MOCVD

A unique characteristic of every semiconductor is the amount of energy required to break an electron bond in the lowest band of allowed states, the valence band. The energy necessary to set an electron free and allow it to conduct in the material is termed the energy gap (Eg). Semiconductors with wide bandgap energies have been shown to possess properties for high power, high temperature, radiation resistance damage, and short wavelength optoelectronic applications. Gallium nitride, which has a wide gap of 3.39 eV, is a material that has demonstrated these characteristics. Various growth conditions are being investigated for quality gallium nitride heteroepitaxy growth via the technique of low pressure metal organic chemical vapor deposition (MOCVD) that can be used for device development.

Dickens, Corey↗
NASA NTRS1989

Line mixing effects in solar occultation spectra of the lower stratosphere - Measurements and comparisons with calculations for the 1932/cm CO2 Q branch

Line mixing effects have been observed in a CO2 Q branch recorded in 0.01/cm-resolution IR solar occultation spectra of the lower stratosphere. The spectral data were obtained by the Atmospheric Trace Molecule Spectroscopy Fourier transform spectrometer during the Spacelab 3 mission in the spring of 1985. Analysis of the 1932.47/cm Q branch of (C-12)(O-16)2 shows absorption coefficients below the band origin about 0.62 times those calculated using a standard Voigt line-shape function. Calculations of line mixing using the Lorentz halfwidths of the lines and a simple energy-gap scaling law to parameterize rotational energy transfer reproduce the observed absorption coefficients to about 10 percent. The present results provide the first quantitative information on air-broadened line mixing effects in a Q branch at low temperatures (about 210 K) and show that these effects are significant even at the low pressures of the lower stratosphere (about 100 mbar).

Rinsland, Curtis P.↗
NASA NTRS2000

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

Interest in optical devices which can operate in the visible spectrum has motivated research interest in the II-VI wide band gap semiconductor materials. The recent challenge for semiconductor opto-electronics is the development of a laser which can operate at short visible wavelengths. In the past several years, major advances in thin film technology such as molecular beam epitaxy and metal organic chemical vapor deposition have demonstrated the applicability of II-VI materials to important devices such as light-emitting diodes, lasers, and ultraviolet detectors. With an energy gap of 2.7 eV at room temperature, and an efficient band- to-band transition, ZnSe has been studied extensively as the primary candidate for a blue light emitting diode for optical displays, high density recording, and military communications. By employing a ternary or quaternary system, the energy band gap of II-VI materials can be tuned to a specific range. While issues related to the compositional inhomogeneity and defect incorporation are still to be fully resolved, ZnSe bulk crystals and ZnSe-based heterostructures such as ZnSe/ZnSeS, ZnSe/ZnCdSe and ZnCdSe/ZnSeS have showed photopumped lasing capability in the blue-green region at a low threshold power and high temperatures. The demonstration of its optical bistable properties in bulk and thin film forms also make ZnSe a possible candidate material for the building blocks of a digital optical computer. Despite this, developments in the crystal growth of bulk H-VI semiconductor materials has not advanced far enough to provide the low price, high quality substrates needed for the thin film growth technology.

Su, Ching-Hua↗