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At least 37 records · Page 2

A Guide to Updating Interconnection Rules and Incorporating IEEE Standard 1547

The intent of this paper is to support local authorities in adopting the most current technical requirements for interconnecting distributed energy resources (DERs) to the electric distribution system as specified in the Institute of Electrical and Electronics Engineers Standard for Interconnection and Interoperability of Distributed Energy Resources with Associated Electric Power Systems Interfaces (IEEE Std 1547-2018). To create interconnection rules that successfully address policy goals, market trends, and technical requirements, state regulators need to be well informed of DER integration considerations. Interconnection processes and technical issues often overlap; the two are not easily segregated, and they are often considered and evaluated concurrently within the context of interconnection rulemaking. Accordingly, this paper addresses both the technical issues and related process considerations. A lack of uniform and transparent procedures for addressing interconnection rule changes can result in implementation issues or inefficiencies, such as unclear, lengthy, and complicated interconnection rules that can increase distributed generation "soft costs" (i.e., non-hardware costs). This can further delay the deployment of DERs and jeopardize time-constrained national and state policy goals, such as renewable energy targets, or limit participation in emerging techno-economic trends. Additionally, misconstructed interconnection rules are at risk of becoming mired in stakeholder conflicts. This guide addresses the concerns of electric service regulators from both the process and technical standpoints by presenting a structured, step-by-step approach to developing and updating existing interconnection rules. In this document, the process of developing and updating interconnection rules is subdivided into three steps: (1) determining the context (stakeholders and major drivers); (2) developing the rule, including updating technical requirements; and (3) maintaining and revising the rule over time.

14 SOLAR ENERGY↗

Support for the 2019 IEEE Symposium on Fusion Engineering

This award provided financial support to help cover program-related expenses for the 2019 IEEE Symposium on Fusion Engineering (SOFE-2019), which was held 2-6 June 2019 near Jacksonville, FL. The SOFE is a biennial conference that enables fusion engineers from around the world to report on their work and stay current with the latest developments in fusion R&D, both physics and engineering. The symposium was sponsored by the Nuclear and Plasma Sciences Society (NPSS) of the Institute of Electrical and Electronics Engineers (IEEE), an international professional society whose members today span a wide range of disciplines. The IEEE Fusion Technology Standing Committee (FTC), most of whose members are involved in DOE Fusion Energy Sciences (FES) sponsored work, were responsible for organizing the SOFE. The SOFE has been the leading conference of choice for U.S. fusion engineers since its founding in 1965. In recent years, attendance has been growing as the conference has attracted greater participation of fusion researchers from other countries, especially from Asia but also from Europe and from the international ITER project, both central team and domestic agencies. This trend benefits U.S. participants by providing a forum to learn about the world’s most advanced fusion engineering activities and to strengthen collaborative ties with colleagues.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Current Practices in Distribution Utility Resilience Planning for Winter Storms

This report is part of a series of hazard-focused case studies examining common practices in electric utility resilience planning. We use standard terminology defining resilience as the ability to anticipate, withstand, absorb, and recover from hazards that cause long duration outages. We distinguish between reliability and resilience using Institute of Electrical and Electronics Engineers (IEEE) 1366-2022, which defines major events as an event that exceeds reasonable design and/or operational limits of the electric power system. Resilience planning is focused on major event days and reliability planning is focused on nonmajor event days. Utility resilience plans are assessed according to common resilience components identified in existing resilience frameworks. The focus of this report is on winter storms in which the primary hazards are heavy snowfall, freezing rain, ice, extreme cold, severe wind, and flooding. These hazards can also contribute to generation shortages, resulting in bulk power system impacts that have consequences for the distribution system, such as load shedding. Stand-alone reports focusing on wildfires and nonwinter storms have been published in parallel with this report. This report can be used as a starting point for understanding potential investment prioritization processes and investment options. This report is intended to improve utility resilience planning by supporting constructive dialogue among utilities, regulators, and other stakeholders.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗

End-to-end Analytics for Grid Arch Design & All-hazard Assessment

Resiliency, reliability, and security of the next-generation smart grid depend upon leveraging advanced communication and computing technologies, integrating them with physical power systems, and developing real-time, fast, data-based applications to help in wide-area monitoring and control of the grid. Using a high sampling data rate from phasor measurement units (PMUs) to develop applications has opened the door to achieving the next-generation grid requirements. The North American Synchrophasor Initiative Network (NASPlnet) was developed in 2007-09 to create a standard and guide for PMU data exchanges. With the advancement in both networking and grid requirements, it is necessary to evaluate the performance of different NASPInet versions and their impact on applications. Therefore, we need a cyber-power cosimulation framework that supports very large-scale co-simulation capable of running in parallel, high-performance computing platforms and capturing real-life network behavior. This work presents a cyber-physical co-simulation testbed using NS3 to model the communication network, GridPACK to model the power grid, and HELICS as a co-simulation engine. Comparative analysis of latency in synchrophasor networks and a performance evaluation of a power system stabilizer application based on PMU data in an Institute of Electrical and Electronics Engineers 39-bus test system is presented using this co-simulation testbed.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Considerations for Distributed Energy Resource Integration in Puerto Rico: DOE Multi-Lab Grid Modeling Support for Puerto Rico; Analytical Support for Interconnection and IEEE Std 1547-2018 National Renewable Energy Laboratory (Task 3.0)

To ensure the sustainable long-term recovery of Puerto Rico's electric power grid from hurricanes María and Irma and to build capacity to manage future potential natural disasters in the most secure and resilient way, the U.S. Department of Energy (DOE) convened experts from multiple national laboratories to develop a comprehensive set of data, models, analytic tools, and studies, considering inputs from a wide variety of stakeholder groups, to support technically sound recommendations for Puerto Rico's energy investment decisions. A resilient electric grid is vital to Puerto Rico's security, economy, and way of life, and it will provide the foundation for essential services that people and businesses on the island rely on every day. This report shows progress for a grid modeling task under the DOE-sponsored project that is a collaboration among the National Renewable Energy Laboratory (NREL) and other national laboratories. In Phase 1 of the multilab effort to support Puerto Rico's recovery, NREL provided the utility company Puerto Rico Electric Power Authority (PREPA) recommendations for a new framework of interconnection standards to accelerate the integration of utility-scale, transmission-connected renewable electrical generation and energy storage that ensure cross-technology compatibility and enable high deployment levels without compromising grid reliably, safety, or security. This Phase 2 report focuses on the interconnection of distributed energy resources (DERs) to the electric distribution system in Puerto Rico. This report is intended to familiarize the reader with Puerto Rico's distribution infrastructure and operational practices and procedures that are relevant to DER interconnection. The report also provides considerations for streamlining the interconnection process given the expected increase in deployments resulting from Puerto Rico's renewable portfolio standard (RPS) goal of 100% renewables by 2050. Accordingly, the report identifies considerations and concerns associated with the increase in intermittent generation, strategies for DER interconnection best practices, and the potential use of the latest technological solutions identified in the latest revision of the Institute of Electrical and Electronics Engineers (IEEE) 1547-2018 interconnection standard.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Electrical Systems of Pumped Storage Hydropower Plants: Electrical Generation, Machines, Power Electronics, and Power Systems

Adjustable-speed (AS) pumped storage hydropower (PSH) technology has the potential to become a large, consistent contributor to grid stability enabling higher penetrations of wind and solar energy on the future U.S. power system. AS-PSH has high-value characteristics, such as fast response to provide ancillary services to the grid, because it is a power converter interface with the grid (like battery storage), but at the same time it has the energy content large enough to supply both short-term (seconds-to-minutes) and long-term (minutes-to-hours) of energy needs, like more conventional power plants. However, designs must be optimized to lower the capital expenditure (CapEx) and to provide a high-quality grid interface capability (e.g. power quality, ancillary service provider, fault-tolerant or fault ride-through capability), which is a primary factor in the acceptance of AS-PSH into a utility’s generation mix. This CapEx will be greatly affected by the cost savings associated with the civil structure, turbine design, power electronics, control systems, or unique generator designs. A holistic design must be considered to get a full picture of the benefits of the technology proposed. The AS-PSH can be controlled to reduce the impact of transient disturbance on a power system and at the same time can be controlled to minimized subsequent component fatigue and potential oscillation modes within the plant, with the overall impact in reducing the operational expenditures (OpEx).Generating clean power to meet standards such as Institute of Electrical and Electronics Engineers (IEEE) 519 and International Electrotechnical Commission (IEC) 1000-3-2 will be a continuing challenge. For many technology developers, however, improved AS-PSH technologies will become a key component of generator-storage systems of the future given the prospects of increased performance and decreasing costs, and the ever-increasing penetration of renewables (e.g wind power and solar power).

13 HYDRO ENERGY↗

Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform

Two-dimensional (2D) materials are promising candidates for future electronics due to their excellent electrical and photonic properties. Although promising results on the wafer-scale synthesis (≤150 mm diameter) of monolayer molybdenum disulfide (MoS 2 ) have already been reported, the high-quality synthesis of 2D materials on wafers of 200 mm or larger, which are typically used in commercial silicon foundries, remains difficult. The back-end-of-line (BEOL) integration of directly grown 2D materials on silicon complementary metal–oxide–semiconductor (CMOS) circuits is also unavailable due to the high thermal budget required, which far exceeds the limits of silicon BEOL integration (<400 °C). This high temperature forces the use of challenging transfer processes, which tend to introduce defects and contamination to both the 2D materials and the BEOL circuits. Here we report a low-thermal-budget synthesis method (growth temperature < 300 °C, growth time ≤ 60 min) for monolayer MoS 2 films, which enables the 2D material to be synthesized at a temperature below the precursor decomposition temperature and grown directly on silicon CMOS circuits without requiring any transfer process. We designed a metal–organic chemical vapour deposition reactor to separate the low-temperature growth region from the high-temperature chalcogenide-precursor-decomposition region. We obtain monolayer MoS 2 with electrical uniformity on 200 mm wafers, as well as a high material quality with an electron mobility of ~35.9 cm 2 V -1 s -1 . Finally, we demonstrate a silicon-CMOS-compatible BEOL fabrication process flow for MoS 2 transistors; the performance of these silicon devices shows negligible degradation (current variation < 0.5%, threshold voltage shift < 20 mV). We believe that this is an important step towards monolithic 3D integration for future electronics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Low-Cost, User-Friendly, Rapid Analysis of Dynamic Data System Established

An issue of primary importance to the development of new jet and certain other airbreathing combined-cycle powered aircraft is the advancement of airframe-integrated propulsion technologies. Namely, engine inlets and their systems and subsystems are required to capture, convert, and deliver the atmospheric airflow demanded by such engines across their operating envelope in a form that can be used to provide efficient, stable thrust. This must be done while also minimizing aircraft drag and weight. Revolutionary inlet designs aided by new technologies are needed to enable new missions. An unwanted byproduct of pursuing these inlet technologies is increased time-variant airflow distortion. Such distortions reduce propulsion system stability, performance, operability, and life. To countermand these limitations and fully evaluate the resulting configurations, best practices dictate that this distortion be experimentally measured at large scale and analyzed. The required measurements consist of those made by an array of high-response pressure transducers located in the flow field at the aerodynamic interface plane (AIP) between the inlet and engine. Although the acquisition of the necessary pitot-pressure time histories is relatively straight-forward, until recent years, the analysis has proved to be very time-consuming, tedious, and expensive. To transform the analysis of these data into a tractable and timely proposition, researchers at the NASA Glenn Research Center created and established the Rapid Analysis of Dynamic Data (RADD) system. The system provides complete, near real-time analysis of time-varying inlet airflow distortion datasets with report quality output. This fully digital approach employs Institute of Electrical and Electronics Engineers (IEEE) binary data file format standardization to establish data-acquisition-system-independent processing on low cost personal computers. Features include invalid instrumentation code-out, logging, and multiple replacement schemes as needed for each channel of instrumentation. The AIP pressure distribution can be interpolated to simulate measurements by alternate AIP probe arrays, if desired. In addition, the RADD system provides for the application of filters that can be used to focus the analysis on the frequency range of interest.

Arend, David J.↗

Review of Technical Requirements for Inverter-Based Resources in Chile

This document compares the technical requirements in the grid code of Chile (NTSyCS) against the EirGrid (Ireland transmission system operator) and National Grid Electricity System Operator (NESO) grid codes and the Institute of Electrical and Electronics Engineers (IEEE) 2800-2022 standard for conventional inverter technology at the transmission and subtransmission levels in the process of being adopted by system operators in the U.S. The document is intended to be a guide and reference for future updates of the NTSyCS, considering the local system requirements and present improvements in inverter-based resource (IBR) technology. In light of the findings of the aforementioned comparative review, this document proposes and describes the requirements for conventional IBRs that could be incorporated and updated into the Chilean grid code. The document is structured around the main grid challenges posed by the transition to an IBR-dominated grid and conventional IBRs capabilities to help address them. This document does not provide guidance on how this specification should be implemented (e.g., through a mandate or market solution).

24 POWER TRANSMISSION AND DISTRIBUTION↗

Nanosecond Breakdown Characteristics of C 4 F 7 N and Various Mixtures at Pressures Above 1 Atmosphere in Comparison with SF 6

This report evaluates the pulsed breakdown performance of C 4 F 7 N under a 6.8 kV/ns voltage excitation. The pulsed dielectric strength of C 4 F 7 N is compared to SF 6 in the same experimental setup, and it is found that C 4 F 7 N concentrations of 50% or greater are required to achieve a dielectric strength greater than or equal to SF 6 . Pure C 4 F 7 N demonstrated higher electric field hold-off for longer time periods and less statistical variance under pulsed conditions when compared to SF 6 . Mixtures of 50%C 4 F 7 N with N 2 or CO 2 as buffer gases showed no appreciable difference in pulsed dielectric strength.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

High-performance photonic transformers for DC voltage conversion

Abstract Direct current (DC) converters play an essential role in electronic circuits. Conventional high-efficiency DC voltage converters, especially step-up type, rely on switching operation, where energy is periodically stored within and released from inductors and/or capacitors connected in a variety of circuit topologies. Since these energy storage components, especially inductors, are fundamentally difficult to scale down, miniaturization of switching converters proves challenging. Furthermore, the resulting switching currents produce significant electromagnetic noise. To overcome the limitations of switching converters, photonic transformers, where voltage conversion is achieved through light emission and detection processes, have been demonstrated. However, the demonstrated efficiency is significantly below that of the switching converter. Here we perform a detailed balance analysis and show that with a monolithically integrated design that enables efficient photon transport, the photonic transformer can operate with a near-unity conversion efficiency and high voltage conversion ratio. We validate the theory with a transformer constructed with off-the-shelf discrete components. Our experiment showcases near noiseless operation and a voltage conversion ratio that is significantly higher than obtained in previous photonic transformers. Our findings point to the possibility of a high-performance optical solution to miniaturizing DC power converters and improving the electromagnetic compatibility and quality of electrical power.

42 ENGINEERING↗

An electro-optical Mott neuron based on niobium dioxide

Various applications—including brain-like computing and on-chip artificial vision—increasingly demand a combination of electronic and photonic techniques. However, integrating both approaches on a single chip is challenging, and solutions typically rely on disparate components with power-hungry signal conversions. Here, in this paper, we report electro-optical Mott neurons that combine visible light emission with electrical threshold switching, as well as neuron-like oscillations. The devices are based on thin films of sputtered niobium dioxide (NbO 2 ), a Mott insulator–metal transition material, operating at room temperature and emitting light that peaks around 810 nm. Operando measurements reveal an electronic origin to the light emission: charge carrier relaxation initiated by high-field transport in the NbO 2 . Our devices combine electrical and optical functions within a single material, thereby expanding the options available for future artificial intelligence hardware.

electrical engineering↗

Strain-insensitive intrinsically stretchable transistors and circuits

An all-elastomer strain engineering approach, which uses patterned elastomer layers with tunable stiffnesses, can be used to create intrinsically stretchable transistor arrays with a device density of 340 transistors cm -2 and strain insensitivity of less than 5% performance variation when stretched to 100% strain. Intrinsically stretchable electronics can form intimate interfaces with the human body, creating devices that could be used to monitor physiological signals without constraining movement. However, mechanical strain invariably leads to the degradation of the electronic properties of the devices. Here we show that strain-insensitive intrinsically stretchable transistor arrays can be created using an all-elastomer strain engineering approach, in which the patterned elastomer layers with tunable stiffnesses are incorporated into the transistor structure. By varying the cross-linking density of the elastomers, areas of increased local stiffness are introduced, reducing strain on the active regions of the devices. This approach can be readily incorporated into existing fabrication processes, and we use it to create arrays with a device density of 340 transistors cm -2 and a strain insensitivity of less than 5% performance variation when stretched to 100% strain. We also show that it can be used to fabricate strain-insensitive circuit elements, including NOR gates, ring oscillators and high-gain amplifiers for the stable monitoring of electrophysiological signals.

42 ENGINEERING↗

Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques

Abstract To improve the manufacturing of vertical GaN devices for power electronics applications, the effects of defects in GaN substrates need to be better understood. Many non-destructive techniques including photoluminescence, Raman spectroscopy and optical profilometry, can be used to detect defects in the substrate and epitaxial layers. Raman spectroscopy was used to identify points of high crystal stress and non-uniform conductivity in a substrate, while optical profilometry was used to identify bumps and pits in a substrate which could cause catastrophic device failures. The effect of the defects was studied using vertical P-i-N diodes with a single zone junction termination extention (JTE) edge termination and isolation, which were formed via nitrogen implantation. Diodes were fabricated on and off of sample abnormalities to study their effects. From electrical measurements, it was discovered that the devices could consistently block voltages over 1000 V (near the theoretical value of the epitaxial layer design), and the forward bias behavior could consistently produce on-resistance below 2 mΩ cm 2 , which is an excellent value considering DC biasing was used and no substrate thinning was performed. It was found that high crystal stress increased the probability of device failure from 6 to 20%, while an inhomogeneous carrier concentration had little effect on reverse bias behavior, and slightly (~ 3%) increased the on-resistance (R on ). Optical profilometry was able to detect regions of high surface roughness, bumps, and pits; in which, the majority of the defects detected were benign. However a large bump in the termination region of the JTE or a deep pit can induce a low voltage catastrophic failure, and increased crystal stress detected by the Raman correlated to the optical profilometry with associated surface topography.

42 ENGINEERING↗

Low Offset and Noise in High Biased GaN 2DEG Hall-Effect Plates Investigated With Infrared Microscopy

This article presents GaN two-dimensional electron gas (2DEG) Hall plates with low residual offset and noise at 3 V input bias. We studied devices made from three consecutive fabrication generations through current spinning offset measurements in a zero-field chamber. When operated above 1 V, the first-generation devices charted high residual offsets >1 mT. We reduced these residual offsets by three orders of magnitude in later device generations. Two experiments were performed to confirm the improvements. First, the GaN 2DEG Hall-effect plates were measured with infrared microscopy during current spinning to investigate current crowding and Joule heating. The low offset devices had minimal thermal gradients while the high offset devices had large thermal variations during current spinning. Second, zero-field current spinning was used to compare GaN 2DEG Hall-effect plates against typical commercial silicon Hall-effect plates. The Si devices had residual offsets >10μT biased at 3 V and AlGaN/GaN devices had residual offset <4 μT at 3 V, and an InAlN/GaN devices operated at 2 V had a residual offset <4 μT . Thus, for the first time, GaN 2DEG Hall-effect plates were shown to operate with high bias with low offsets and noise, which enables high fidelity sensing applications in extreme environments.

2DEG↗