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At least 37 records · Page 2

Synthesis and Electrical Properties of a New Compound (BiSe) 0.97 (Bi 2 Se 3 ) 1.26 (BiSe) 0.97 (MoSe 2 ) Containing Metallic 1T-MoSe 2

The synthesis and electrical properties of a new misfit compound containing BiSe, Bi 2 Se 3 , and MoSe 2 constituent layers are reported. The reaction pathway involves competition between the formation of (BiSe) 1+x (Bi 2 Se 3 ) 1+y (BiSe) 1+x (MoSe 2 ) and [(Bi 2 Se 3 ) 1+y ] 2 (MoSe 2 ). Excess Bi and Se are required in the precursor to synthesize (BiSe) 1+x (Bi 2 Se 3 ) 1+y (BiSe) 1+x (MoSe 2 ). High-angle annular dark field-scanning transmission electron microscopy (HAADF-STEM) confirm the stacking sequence of the heterostructure. Small grains of both 2H- and 1T-MoSe 2 are observed in the MoSe 2 layers. X-ray photoelectron spectroscopy (XPS) indicates that there is a significantly higher percentage of 1T-MoSe 2 in (BiSe) 1+x (Bi 2 Se 3 ) 1+y (BiSe) 1+x (MoSe 2 ) than in (BiSe) 0.97 (MoSe 2 ), suggesting that more charge transfer to MoSe 2 occurs due to the additional BiSe layer. The additional charge transfer results in (BiSe) 1+x (Bi 2 Se 3 ) 1+y (BiSe) 1+x (MoSe 2 ) having a low resistivity (14–19 μΩ m) with metallic temperature dependence. Furthermore, the heterogeneous mix of MoSe 2 polytypes observed in the XPS complicates the interpretation of the Hall data as two bands contribute to the electrical continuity.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Tuning the Mechanical and Electric Properties of Conjugated Polymer Semiconductors: Side–Chain Design Based on Asymmetric Benzodithiophene Building Blocks

Understanding molecular design rules for stretchable polymer semiconductors is important for enabling next generation stretchable electronic circuits. To simultaneously improve both electrical properties and mechanical stretchability, a design strategy is reported in introducing conjugated rigid fused-rings with bulky side groups in semiconducting polymers. In this work, the understanding of this design concept is improved by systematically investigating the effect of different types of bulky side groups asymmetrically substituted on conjugated polymer semiconductor backbones. Specifically, four types of side groups are investigated, including naphthalene (NaPh), biphenyl (PhPh), thienylphenyl (ThPh), and alkylphenyl (C4Ph), asymmetrically substituted on benzodithiophene units, namely asy-BDT. With the four types of side groups installed on BDT-containing conjugated polymers in an asymmetrical fashion, it is observed that they reduced the polymer chain aggregation and film crystallinity, hence improving the film stretchability. Furthermore, the fully conjugated polymer back-bone allows maintenance of good charge carrier mobilities. Specifically, polymer PDPP-C4Ph (with C4Ph side groups) shows the highest mobility in the fully stretchable transistor and maintained its mobility even after being subjected to hundreds of stretching-releasing cycles at 25% strain. Altogether, the results provide anunderstanding of the use of asymmetrically substituted fused-ring conjugated polymer structures to tune mechanical and charge transport properties.

36 MATERIALS SCIENCE↗

Microstructural, optical and electrical properties of CdS thin films grown by spray pyrolysis technique as a function of substrate temperature

In this research, nanocrystalline cadmium sulfide thin films were produced by the spray pyrolysis technique on glass substrates. The effects of substrate temperature in the range 400–550 °C on the structural, morphological, optical, and electrical properties of the thin films were investigated. The thin films have been characterized by investigating their X-ray diffraction, field emission scanning electron microscope (FE-SEM), and optical absorption (UV–Vis) measurements. X-ray analysis revealed that thin films were a polycrystalline structure with the hexagonal phase in all cases and by increasing in substrate temperature, crystallite size decreases, and dislocation density increases. The FE-SEM images showed that the surface of the thin films is uniform, homogeneous and without cracks. The average sizes of the grains are at the range of 210–235 nm. The obtained values for optical band gap have been in the range of 2.18–2.41 eV, where the value of optical band gap for the thin films decreases by increasing substrate temperature. The Urbach energies of the thin films increase as the substrate temperature is increased. When substrate temperature increased from 400 to 550 °C, electrical resistivity increased from 531 to 2817 Ω cm, carrier concentration decreased from 15.96 × 10{sup 14} to 3.71 × 10{sup 14} cm{sup −3}, Hall mobility decreased from 7.37 to 5.98 cm{sup 2}/V s. Hall effect analysis indicated that the thin films exhibited n-type conductivity.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Anisotropic electrical properties of NiO x /β-Ga 2 O 3 p-n heterojunctions on (2̅01), (001), and (010) crystal orientations

Abstract NiO x / β -Ga 2 O 3 p-n heterojunctions fabricated on ( 2 ̅ 01 ) , ( 001 ) , and ( 010 ) β -Ga 2 O 3 substrates show distinctly anisotropic electrical properties. All three devices exhibited excellent rectification ≥10 9 , and turn-on voltages >2.0 V. The ( 010 ) device showed very different turn-on voltage, specific on-resistance, and reverse recovery time compared with ( 2 ̅ 01 ) and ( 001 ) devices. Moreover, it is calculated that the interface trap state densities for ( 2 ̅ 01 ) , ( 001 ) , and ( 010 ) plane devices are 4.3 × 10 10 , 7.4 × 10 10 , and 1.6 × 10 11 eV –1 cm –2 , respectively. These differences in the NiO x / β -Ga 2 O 3 heterojunctions are attributed to the different atomic configurations, the density of dangling bonds, and interface trap state densities.

Physics↗

Semiconductor Thermal and Electrical Properties Decoupled by Localized Phonon Resonances

Abstract Thermoelectric materials convert heat into electricity through thermally driven charge transport in solids or vice versa for cooling. To compete with conventional energy‐conversion technologies, a thermoelectric material must possess the properties of both an electrical conductor and a thermal insulator. However, these properties are normally mutually exclusive because of the interconnection between scattering mechanisms for charge carriers and phonons. Recent theoretical investigations on sub‐device scales have revealed that nanopillars attached to a membrane exhibit a multitude of local phonon resonances, spanning the full spectrum, that couple with the heat‐carrying phonons in the membrane and cause a reduction in the in‐plane thermal conductivity, with no expected change in the electrical properties because the nanopillars are outside the pathway of voltage generation and charge transport. Here this effect is demonstrated experimentally for the first time by investigating device‐scale suspended silicon membranes with GaN nanopillars grown on the surface. The nanopillars cause up to 21% reduction in the thermal conductivity while the power factor remains unaffected, thus demonstrating an unprecedented decoupling in the semiconductor's thermoelectric properties. The measured thermal conductivity behavior for coalesced nanopillars and corresponding lattice‐dynamics calculations provide evidence that the reductions are mechanistically tied to the phonon resonances. This finding paves the way for high‐efficiency solid‐state energy recovery and cooling.

Spann, Bryan T.↗

Exploring the Impact of Copper Oxide Substitution on Structure, Morphology, Bioactivity, and Electrical Properties of 45S5 Bioglass®

In recent decades, the requirements for implantable medical devices have increased, but the risks of implant rejection still exist. These issues are primarily associated with poor osseointegration, leading to biofilm formation on the implant surface. This study focuses on addressing these issues by developing a biomaterial for implant coatings. 45S5 bioglass® has been widely used in tissue engineering due to its ability to form a hydroxyapatite layer, ensuring a strong bond between the hard tissue and the bioglass. In this context, 45S5 bioglasses®, modified by the incorporation of different amounts of copper oxide, from 0 to 8 mol%, were synthesized by the melt–quenching technique. The incorporation of Cu ions did not show a significant change in the glass structure. Since the bioglass exhibited the capacity for being polarized, thereby promoting the osseointegration effectiveness, the electrical properties of the prepared samples were studied using the impedance spectroscopy method, in the frequency range of 102–106 Hz and temperature range of 200–400 K. The effects of CuO on charge transport mobility were investigated. Additionally, the bioactivity of the modified bioglasses was evaluated through immersion tests in simulated body fluid. The results revealed the initiation of a Ca–P-rich layer formation on the surface within 24 h, indicating the potential of the bioglasses to enhance the bone regeneration process.

Hammami, Imen (ORCID:0000000290072221)↗

Synergistic role of Sn-doping on the thermal and electrical properties of sinnerite Cu 6 As 4 S 9

Sinnerite Cu 6 As 4 S 9 has been identified as a promising material for optoelectronic applications, with potential for other energy-related applications; however, knowledge of the electrical and thermal properties as well as the mechanisms underlying transport in sinnerite is lacking. Here, we present an investigation of the synthesis, structural, thermal and electrical transport properties of stoichiometric and Sn-doped Cu 6 As 4 S 9 . Sinnerite has a triclinic lattice structure, with highly distorted local atomic coordination environments that, in part, results in its complex structure and bonding. Our results and analyses indicate As 4s 2 lone pair-induced distortions and strong lattice anharmonicity that leads to a relatively short phonon mean free path, resulting in intrinsically very low thermal conductivity. The electrical resistivity for both compositions, Cu 6 As 4-x Sn x S 9 (x = 0, 0.2), are relatively high and varies little with temperature, typical of degenerate semiconductors. An increase in mobility and electrical conductivity was obtained by Sn doping in Cu 6 As 3.8 Sn 0.2 S 9 . This work demonstrates an effective route to synthesize bulk sinnerite as well as advances the knowledge of the properties of sinnerite, as this and other ternary chalcogenides continue to be of interest for potential technologically significant applications.

36 MATERIALS SCIENCE↗

Electrical property enhancement of non-heat-treatable wrought aluminum alloys using graphene additives

With growing efforts of electrification, aluminum’s role as a light-weight conductor material has become increasingly prominent. There is a critical need to improve the electrical performance of aluminum at room temperature and high operating temperatures. In this study, the effect of graphene nanoparticle additives on the electrical performance of a non-heat treatable alloy were (AA3003) explored. Graphene’s unusual structure and electronic properties were used to improve AA3003 properties. Here, in this work, the effects of graphene on the evolution of electrical properties and microstructural features have been explored on lab scale hot extruded AA3003-graphene composites. Hot pressing schedules and extrusion temperatures were varied to investigate changes in intermetallic dispersion characteristics in the presence of dispersed graphene. We measured a reduction of 10.3 % in the temperature coefficient of resistance in the AA3003 sample with 0.05 wt% graphene extruded at 400 °C, along with a maximum increase of 1.1 % in electrical conductivity at 20 °C. Increasing the hot-pressing times up to 8 hours was also found to consistently increase the electrical conductivity, due to increased precipitation of intermetallic phases. Despite being a non-heat treatable alloy, AA3003 displays interesting precipitation dynamics and grain recrystallization trends that can be modulated with varying levels of heat treatment, graphene concentrations, and hot extrusion process parameters.

36 MATERIALS SCIENCE↗

Influence of minor Ce additions on magnetic and electrical properties in Fe–6.5 wt. % Si alloy

Fe–6.5 wt. % Si alloys exhibit lower core loss at higher frequency than the dominating electrical steel containing 3.2% Si due to its lower magneto-crystalline anisotropy energy (MAE) and higher electrical resistivity. However, compared to nanocrystalline and amorphous soft-magnetic materials, 6.5% Si steel, although being cost effective and having high saturation magnetization, still has much to improve, especially with respect to MAE and resistivity. To explore further improvement, the effects of minor Ce additions (due to its mixed valence 4f-electron configuration) on the microstructure, electrical and magnetic behaviors of Fe–6.5 wt. % Si alloys were investigated. Due to its limited solubility in Fe, Ce exhibits condition-dependent effects on electrical resistivity, showing only marginal improvement under rapid solidification. In contrast, Ce addition degrades magnetic performance, reducing saturation magnetization (from 1.86 to 1.76 T) and increasing coercivity (from 88 to 171 A/m), which results in an 83.4% increase in core loss (W 10/1000 condition). Overall, Ce addition provides limited benefit in electrical resistivity while deteriorating magnetic properties, making it ineffective for enhancing the soft magnetic performance of Fe–6.5 wt. % Si alloys.

36 MATERIALS SCIENCE↗

Investigations of room temperature multiferroic and magneto-electric properties of (1-Φ) PZTFT-Φ CZFMO particulate composites

Multiferroic composites consisting of a single-phase multiferroic [0.6(PbZr 0.53 Ti 0.47 O 3 )-0.4(PbFe 0.5 Ta 0.5 )O 3 ] as a matrix and a magnetostrictive phase (Co 0.6 Zn 0.4 Fe 1.7 Mn 0.3 O 4 ) dispersed in the matrix are fabricated via hybrid synthesis technique. The structure and surface morphology studies using x-ray diffraction and field emission scanning electron microscopy techniques indicate the formation of 3-0 type particulate composites. Coexistence of soft-magnetic behavior and ferroelectric characteristics are confirmed for composites from magnetization vs magnetic field (M–H) and polarization vs electric field (P–E) measurements, respectively. Magneto-dielectric (MD) measurement shows significant changes in the dielectric properties with the application of a magnetic field, indicating the existence of strong MD behavior. The biquadratic nature of magneto-electric (ME) coupling is described by the Landau free energy equation arising from the strain transfer at the interfaces between the constituent phases. The direct magneto-electric voltage coefficient measurement also confirms very strong coupling between ferroelectricity and magnetism and supports the strain-mediated magneto-electric effect in composites. The Φ = 0.3 composite exhibits the maximum ME coefficient of 20.72 mV/cm Oe with M S = 24.62 emu/g, H C = 59.66 Oe, and piezoelectric coefficient value d 33 = 19 pC/N. In conclusion, the strong magneto-electric effect along with low dielectric loss at room temperature in these composites suggests their suitability for multifunctional magneto-electric device applications such as magnetic sensors, etc.

36 MATERIALS SCIENCE↗

Influence of oxygen on the optical and electrical properties of magnetron-sputtered indium tin oxide thin films at ambient temperature

Indium Tin Oxide (ITO) thin films are commonly used as transparent conductive layers in the production of solar cells. ITO films are typically heat-treated at temperatures exceeding 200 °C after magnetron sputtering to optimize the physical, optical, and electrical characteristics for photovoltaic devices. Here, this high temperature heating procedure greatly limits the use of potential substrates, particularly those comprised of low-temperature-rated polymers. Herein, we examine the physical, optical, and electrical transport effects of oxygen:argon plasmas during radio frequency magnetron sputtering of ITO on glass and flexible polymer surfaces without subsequent heat treatment. ITO thin films were characterized via sheet resistance testing, UV-Vis spectroscopy, X-ray diffraction, and scanning electron microscopy imaging. Sheet resistance measurements revealed an increase in surface resistance with increasing oxygen concentration during sputtering. UV-Vis optical transmittance measurements demonstrated an improvement in optical transmittance with an increase in oxygen concentration reaching a maximum transmittance at an oxygen concentration of 1-2 %. Most importantly, it was discovered that producing bilayers of ITO with pure argon sputtered plasmas followed by oxygen:argon plasmas produced ITO thin films with suitable resistance and transmittance without the need for high temperature post annealing. These results highlight a methodology for the deposition of ITO thin films on temperature sensitive substrates for flexible photovoltaics and low-cost module production.

36 MATERIALS SCIENCE↗

Electrical Properties of Carbon Dioxide Hydrate: Implications for Monitoring CO 2 in the Gas Hydrate Stability Zone

CO 2 and CH 4 clathrate hydrates are of keen interest for energy and carbon cycle considerations. While both typically form on Earth as cubic structure I (sI), we find that pure CO 2 hydrate exhibits over an order of magnitude higher electrical conductivity ( σ ) than pure CH 4 hydrate at geologically relevant temperatures. In this study, the conductivity was obtained from frequency-dependent impedance ( Z ) measurements made on polycrystalline CO 2 hydrate (CO 2 ·6.0 ± 0.2H 2 O by methods here) with 25% gas-filled porosity, compared with CH 4 hydrate (CH 4 ·5.9H 2 O) formed and measured in the same apparatus and exhibiting closely matching grain characteristics. The conductivity of CO 2 hydrate is 6.5 × 10 –4 S/m at 273K with an activation energy ( E a ) of 46.5 kJ/mol at 260–281 K, compared with ~5 × 10 –5 S/m and 34.8 kJ/m for CH 4 hydrate. Equivalent circuit modeling indicates that different pathways govern conduction in CO 2 versus CH 4 hydrate. Results show promise for use of electromagnetic methods in monitoring CO 2 hydrate formation in certain natural settings or in CO 2 /CH 4 exchange efforts.

58 GEOSCIENCES↗

Acoustic and electrical properties of Fe-Ti oxides with application to the deep lunar mantle

The overturn of titanium-rich mantle cumulates has been invoked to explain the structure and dynamics of the Moon. These dense cumulates are stable at the core-mantle boundary (CMB) and could explain field observations inferred from geophysical studies. Here, we report acoustic and electrical experiments on natural ilmenite-rutile aggregates up to 4.5 GPa and 1920 K. Seismic velocities show a weak pressure and temperature dependence, with Vs ~ 4.2 (+/-0.2) km/s and Vp ~8.0 (+/-0.2) km/s at the CMB conditions. Conductivity increases by a factor of 10 4 from 373 to 1920 K and is >10(3) S/m above 1573 K. Seismic and electrical models for the lunar mantle based on our results, considering mixtures of Fe-Ti oxides and olivine, indicate that field velocity and conductivity estimates are reproduced satisfactorily with 3-16 vol.% Fe-Ti oxides and 20 vol.% melt. Interactions between a Ti-rich, melt-bearing layer and the adjacent core likely affect the cooling and magnetic history of the Moon.

58 GEOSCIENCES↗

Characterization of Soil Thermal and Electrical Properties along Multiple Hillslope Transects at Teller Road Site, Seward Peninsula, Alaska, 2017

This dataset has been acquired along five-119 m long transects located on the bottom part of the watershed hillslope at the NGEE Arctic Teller Road site at mile marker 27 (TL_MM27) on the Seward Peninsula, Alaska in July and September 2017. The Distributed Temperature Profiling (DTP) system dataset consist in vertically-resolved profile of soil temperature covering the top 0.8 m of soil with 8 cm interval. In addition to DPT data, electrical resistivity tomography (ERT) data, soil moisture, depth to rock or thaw layer thickness (no differentiation) and ground elevations data have been acquired along each of the transects. A UAV-based geotiff mosaic of the investigated site is also provided. The four data types provided with this dataset of 37 files (*.csv, *.tif, *.DATA): (1) soil temperature profiles, (2) ERT data, (3) the physical measurements of the thaw layer, and (4) an orthomosaic GeoTIFF of the transect study area.The Next-Generation Ecosystem Experiments: Arctic (NGEE Arctic), was a research effort to reduce uncertainty in Earth System Models by developing a predictive understanding of carbon-rich Arctic ecosystems and feedbacks to climate. NGEE Arctic was supported by the Department of Energy's Office of Biological and Environmental Research.The NGEE Arctic project had two field research sites: 1) located within the Arctic polygonal tundra coastal region on the Barrow Environmental Observatory (BEO) and the North Slope near Utqiagvik (Barrow), Alaska and 2) multiple areas on the discontinuous permafrost region of the Seward Peninsula north of Nome, Alaska.Through observations, experiments, and synthesis with existing datasets, NGEE Arctic provided an enhanced knowledge base for multi-scale modeling and contributed to improved process representation at global pan-Arctic scales within the Department of Energy's Earth system Model (the Energy Exascale Earth System Model, or E3SM), and specifically within the E3SM Land Model component (ELM).

54 ENVIRONMENTAL SCIENCES↗

Synthesis, Hole Doping, and Electrical Properties of a Semiconducting Azatriangulene-Based Covalent Organic Framework

Two-dimensional covalent organic frameworks (2D COFs) containing heterotriangulenes have been theoretically identified as semiconductors with tunable, Dirac-cone-like band structures, which are expected to afford high charge-carrier mobilities ideal for next-generation flexible electronics. However, few bulk syntheses of these materials have been reported, and existing synthetic methods provide limited control of network purity and morphology. Here, we report transimination reactions between benzophenone-imine-protected azatriangulenes (OTPA) and benzodithiophene dialdehydes (BDT), which afforded a new semiconducting COF network, OTPA-BDT. The COFs were prepared as both polycrystalline powders and thin films with controlled crystallite orientation. Here, the azatriangulene nodes are readily oxidized to stable radical cations upon exposure to an appropriate p type dopant, tris(4-bromophenyl)ammoniumyl hexachloroantimonate, after which the network’s crystallinity and orientation are maintained. Oriented, hole-doped OTPA-BDT COF films exhibit electrical conductivities of up to 1.2 × 10 –1 S cm –1 , which are among the highest reported for imine-linked 2D COFs to date.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Morphological–Electrical Property Relation in Cu(In,Ga)(S,Se) 2 Solar Cells: Significance of Crystal Grain Growth and Band Grading by Potassium Treatment

Abstract Solution‐processed Cu(In,Ga)(S,Se) 2 (CIGS) has a great potential for the production of large‐area photovoltaic devices at low cost. However, CIGS solar cells processed from solution exhibit relatively lower performance compared to vacuum‐processed devices because of a lack of proper composition distribution, which is mainly instigated by the limited Se uptake during chalcogenization. In this work, a unique potassium treatment method is utilized to improve the selenium uptake judiciously, enhancing grain sizes and forming a wider bandgap minimum region. Careful engineering of the bandgap grading structure also results in an enlarged space charge region, which is favorable for electron–hole separation and efficient charge carrier collection. Besides, this device processing approach has led to a linearly increasing electron diffusion length and carrier lifetime with increasing the grain size of the CIGS film, which is a critical achievement for enhancing photocurrent yield. Overall, 15% of power conversion efficiency is achieved in solar cells processed from environmentally benign solutions. This approach offers critical insights for precise device design and processing rules for solution‐processed CIGS solar cells.

Kim, Joo‐Hyun↗