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Kinetic Plasma Simulation in the MOOSE Framework: Verification of Electrostatic Particle In Cell Capabilities
In magnetic confinement nuclear fusion reactors, the interaction between the plasma edge and plasma facing components is extremely important. At the plasma edge, a kinetic representation such as particle-in-cell (rather than a fluid representation) is required to accurately capture the plasma behavior. General purpose particle-in-cell plasma simulation capabilities have been developed in the Multiphysics Object-Oriented Simulation Environment (MOOSE) framework. This new capability is a part of the development of a new MOOSE-based framework for modeling plasma facing components, the Fusion ENergy Integrated multiphys-X (FENIX) framework. In this work, the verification of foundational particle-in-cell capabilities in FENIX is presented. This new plasma simulation capability has three main components: moving particles in discrete steps on the finite element mesh, mapping charge density from the particle's location to the finite element mesh, and solving for the electrostatic potential based on the charge density mapped from particles to the mesh. In this paper, simple verification problems demonstrating each of these new capabilities are presented, and future work includes electromagnetic capabilities and Monte Carlo collisions with neutral gas particles.
On the Equilibrium Electrostatic Potential and Light-Induced Charge Redistribution in Halide Perovskite Structures
Lead halide perovskites are semiconductor materials which are employed as nonintentionally doped absorbers inserted between two selective carrier transport layers (SCTL), realizing a p-i-n or n-i-p heterojunction. In our study, we have developed and investigated a lateral device, based on methylammonium lead iodide (MAPbI3) in which the p-i-n heterojunction develops in the horizontal direction. Our research suggests that the effective doping level in the MAPbI3 film should be very low, below 1012 cm-3. Along the vertical direction, this doping level is not enough to screen the electric field of the buried heterojunction with the SCTL. The perovskite work function is therefore affected by the work function of the SCTL underneath. From drift-diffusion simulations, we show that intrinsic perovskite-SCTL structures develop mV range surface photovoltages (SPVs) under continuous illumination. However, perovskite-SCTL structures can develop SPVs of hundreds of mV, as confirmed by our measurements. We therefore analyzed the compatibility between low doping and low defect densities in the perovskite layer and such high SPV values using numerical modeling. It is shown that these high SPV values could originate from electronic processes due to large band offsets in the buried perovskite-SCTL heterojunctions, or at the SCTL-transparent conductive oxide (TCO) buried heterojunction. However, such electronic processes can hardly explain the long SPV persistence after switching off the illumination.
An Aromatic Cluster in the Active Site of epi-Isozizaene Synthase Is an Electrostatic Toggle for Divergent Terpene Cyclization Pathways
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Electrostatic Control of Shape Selection and Nanoscale Structure in Chiral Molecular Assemblies
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The Importance of Salt-Enhanced Electrostatic Repulsion in Colloidal Crystal Engineering with DNA
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Electrostatically defined silicon quantum dots with counted antimony donor implants
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Electrostatic Origin of Element Selectivity during Rare Earth Adsorption
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Waveform Optimization for Resonantly Driven MEMS Switches Electrostatically Biased Near Pull-In.
Abstract not provided.
Innovative Electrostatic Adhesion Technologies (Flexible Electrostatic Tools for Capture and Handling [FETCH])
No abstract available
Main and Fringe Field Computations for the Electrostatic Quadrupoles of the Muon g-2 Experiment Storage Ring
We consider semi-infinite electrostatic deflectors with plates of different thickness, including plates with rounded edges, and we calculate their electrostatic potential and field using conformal mappings. To validate the calculations, we compare the fringe fields of these electrostatic deflectors with fringe fields of finite electrostatic capacitors, and we extend the study to fringe fields of adjacent electrostatic deflectors with consideration of electrostatic induction, where field falloffs of semi-infinite electrostatic deflectors are slower than exponential and thus behave differently from most magnetic fringe fields. Building on the success with electrostatic deflectors, we develop a highly accurate and fully Maxwellian conformal mappings method for calculation of main fields of electrostatic particle optical elements. A remarkable advantage of this method is the possibility of rapid recalculations with geometric asymmetries and mispowered plates. We use this conformal mappings method to calculate the multipole terms of the high voltage quadrupole used in the storage ring of the Muon g-2 Experiment (FNALE- 0989). Completing the methodological framework, we present a method for extracting multipole strength falloffs of a particle optical element from a set of Fourier mode falloffs. We calculate the quadrupole strength falloff and its effective field boundary (EFB) for the Muon g-2 quadrupole, which has explained the experimentally measured tunes, while simple estimates based on a linear model exhibited discrepancies up to 2%.