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At least 37 records · Page 2

Development of gallium aluminum phosphide electroluminescent diodes

Work done on the development of gallium aluminum phosphide alloys for electroluminescent light sources is described. The preparation of this wide band gap semiconductor alloy, its physical properties (particularly the band structure, the electrical characteristics, and the light emitting properties) and work done on the fabrication of diode structures from these alloys are broadly covered.

Chicotka, R. J.

Epitaxial growth of III-V compounds for electroluminescent light sources

The epitaxial growth techniques used in the fabrication of III-V compound electroluminescent devices are reviewed. Both vapor and liquid phase epitaxial techniques are discussed, including the applications of these techniques to well established materials as well as newer materials. The state of the art of light-emitting devices fabricated from members of the III-V compounds and their solid solutions is also reviewed.

Chu, T. L.

Recent advances in electroluminescent displays applicable to future crew-station interfaces

The operative principles and progress to date on producing thin-film electroluminescent displays (TFEL) are discussed. TFEL displays consist of conductive, insulating and phosphor film layers deposited on a glass substrate. Applying a 200 V potential between the rows and columns in a multiplexed mode causes light to be emitted. Varying the voltage varies the grey level. The panels provide adequate contrast in full sunlight, and have demanded only 4-6 W for 15 sq in. displays. Alphanumeric, graphics, and video images have been generated with a 51 line by 80 character display. The upper limit on the panel size has not yet been defined. Efforts are under way to produce multicolor displays using red and blue phosphors. Trial units are being studied for avionics displays for, e.g., navigation, multipurpose displays, and attitude/direction indicators.

Miller, M. R.

Theoretical and material studies on thin-film electroluminescent devices

Electroluminescent materials and device technology were assessed. The evaluation strongly suggests the need for a comprehensive theoretical and experimental study of both materials and device structures, particularly in the following areas: carrier generation and multiplication; radiative and nonradiative processes of luminescent centers; device modeling; new device concepts; and single crystal materials growth and characterization. Modeling of transport properties of hot electrons in ZnSe and the generation of device concepts were initiated.

Summers, C. J.

Theoretical and material studies of thin-film electroluminescent devices

Thin-film electroluminescent (TFEL) devices are studied for a possible means of achieving a high resolution, light weight, compact video display panel for computer terminals or television screens. The performance of TFEL devices depends upon the probability of an electron impact exciting a luminescent center which in turn depends upon the density of centers present in the semiconductor layer, the possibility of an electron achieving the impact excitation threshold energy, and the collision cross section itself. Efficiency of such a device is presently very poor. It can best be improved by increasing the number of hot electrons capable of impact exciting a center. Hot electron distributions and a method for increasing the efficiency and brightness of TFEL devices (with the additional advantage of low voltage direct current operation) are investigated.

Summers, C. J.

Electroluminescent Displays Made With Alternative Dopants

Metals and metal fluorides deposited in ZnS to form color phosphors. Single-layer, thin-film electroluminescent display device contains ZnS host layer doped to form green, red, and blue phosphors. Luminescence in chosen colors at chosen intersections between rows and columns produced by application of voltages to appropriate row-and-column pairs of conductors.

Robertson, James B.

Electroluminescence Yield Measurements in Xenon Gas with the NEXT-DEMO++ Detector

The NEXT-DEMO++ detector, a high-pressure xenon gas time projection chamber serving as a prototype for the NEXT-100 experiment, was used to measure the electroluminescence (EL) yield as a function of reduced electric field ($E/p$) across pressures from 2.0 to 9.4 bar, utilizing the 41.5 keV de-excitation peak of $^{83m}$Kr. These measurements were made to examine the pressure dependence of the slope of the reduced EL yield $Y/p$, which has shown inconsistencies in the literature. The reduced yield was fitted with a linear model, revealing a modest ($\sim$5%) change in slope, beginning around 5 bar and increasing with pressure up to 9.4 bar.

Renner, J. [Valencia U., IFIC]

Legibility of electroluminescent instrument panels investigated

Legibility studies of several EL /electroluminescent/ displays correlate reading time and accuracy with number size, stroke/width ratio, indicia size, pointer width, contrast, ambient illumination, and color background and and contrast. Human factor criteria established on non-EL displays may not apply to EL displays.

Mc Lean, M. V.

Visible light electroluminescent diodes of indium-gallium phosphide

Vapor deposition and acceptor impurity diffusion techniques are used to prepare indium-gallium phosphide junctions. Certain problems in preparation are overcome by altering gas flow conditions and by increasing the concentration of phosphine in the gas. A general formula is given for the alloy's composition.

Clough, R.