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Electrical resistance of manganin coil to 7 kbar and 200 degrees C, use as pressure indicator at elevated temperatures provided correction due to shift of resistance at different temperatures is made
Ceramic matrix composites are suitable for high temperature structural applications such as turbine airfoils and hypersonic thermal protection systems. The employment of these materials in such applications is limited by the ability to process components reliable and to accurately monitor and predict damage evolution that leads to failure under stressed-oxidation conditions. Current nondestructive methods such as ultrasound, x-ray, and thermal imaging are limited in their ability to quantify small scale, transverse, in-plane, matrix cracks developed over long-time creep and fatigue conditions. Electrical resistance of SiC/SiC composites is one technique that shows special promise towards this end. Since both the matrix and the fibers are conductive, changes in matrix or fiber properties should relate to changes in electrical conductivity along the length of a specimen or part. The effect of matrix cracking on electrical resistivity for several composite systems will be presented and some initial measurements performed at elevated temperatures under stress-rupture conditions. The implications towards electrical resistance as a technique applied to composite processing, damage detection (health monitoring), and life-modeling will be discussed.
In addition to its superconducting properties, a superconductor is usually characterized by poor thermal conductivity and relatively high electrical resistivity in the normal state. To remedy this situation a study of superconducting properties of Cu-rich CU-Nb wires prepared by directionally solidified and cold-rolled technique was conducted. Some of the specimens were prepared by melting, directional solidification and diffusing in Tin. A total of 12 wire specimens was tested. Each specimen was analyzed by plotting experimental data into the following curves: the graph of the residual resistivity as a function of the specimen current at 4.3 K; and the graph of the electrical resistivity as a function of the temperature at a constant current.
Thermal conductivity and electrical resistivity of materials for NERVA engine - Vol. 3
Anomalous electric resistivity of palladium- deuterium system
Electrical resistivity and thermoelectric power of palladium after hydrogen desorption
Elastic strain effect on electrical resistance of thin metal films, deriving equations for strain coefficient of resistance
Electrical resistivity of liquid lithium saturated with cesium
Electrical products having organic materials functioning as pottants, encapsulants, and insulation coatings are commonly exposed to elevated conditions of temperature and humidity. In order to assess service life potential from this method of accelerated aging, it was empirically observed that service life seems proportional to an aging correlation which is the sum of temperature in degrees Celsius (t), and the relative humidity (RH) expressed in percent. Specifically, the correlation involves a plot of time-to-failure on a log scale versus the variable RH + T plotted on a linear scale. A theoretical foundation is provided for this empirically observed correlation by pointing out that the correlation actually involves a relationship between the electrical resistivity (or conductivity) of the organic material, and the variable RH + t. If time-to-failure is a result of total number of coulombs conducted through the organic material, then the correlation of resistivity versus RH + t is synonymous with the empirical correlation of time-to-failure versus RH + t.
The electrical resistivity of undoped diamond films has been measured between room temperature and 1200 C.
Recent studies have successfully shown the use of electrical resistance (ER)measurements to monitor room temperature damage accumulation in SiC fiber reinforced SiC matrix composites (SiCf/SiC) Ceramic Matrix Composites (CMCs). In order to determine the feasibility of resistance monitoring at elevated temperatures, the present work investigates the temperature dependent electrical response of various MI (Melt Infiltrated)-CVI (Chemical Vapor Infiltrated) SiC/SiC composites containing Hi-Nicalon Type S, Tyranno ZMI and SA reinforcing fibers. Test were conducted using a commercially available isothermal testing apparatus as well as a novel, laser-based heating approach developed to more accurately simulate thermomechanical testing of CMCs. Secondly, a post-test inspection technique is demonstrated to show the effect of high-temperature exposure on electrical properties. Analysis was performed to determine the respective contribution of the fiber and matrix to the overall composite conductivity at elevated temperatures. It was concluded that because the silicon-rich matrix material dominates the electrical response at high temperature, ER monitoring would continue to be a feasible method for monitoring stress dependent matrix cracking of melt-infiltrated SiC/SiC composites under high temperature mechanical testing conditions. Finally, the effect of thermal gradients generated during localized heating of tensile coupons on overall electrical response of the composite is determined.
Low temperature electrical resistivities of Al, Ni, Cu, Ti and Fe alloys for different heat treated conditions
Process for determining thermal conductivity and electrical resistivity of porous materials is described. Characteristics of materials are identified and used in development of mathematical models. Limitations of method are examined.
Experimental measurements of the electrical resistivity vs temperature of methane vapor grown carbon fibers are presented. The fibers are heat treated from 1100 C (as-grown) to 3000 C. Data are fit to a standard two band model, which yields values for boundary scattering limited electron mobility, in-plane mean free path, energy band overlap, and total carrier density. The data are also fit to an ellipsoidal band model, where data fits yield effective masses, band overlap, Fermi velocity, phonon contributions to scattering, and ionized impurity scattering rates.
To date, very little is understood about electrotransport in thin films. One reason for this is the lack of methods in which electromigration can be adequately monitored dynamically. In this thesis, a new nondestructive method for the study of the electrotransport phenomenon in thin aluminum films is presented. This method makes use of electrical resistance measurements of various regions along the test sample to monitor changes in resistance resulting from electromigration. The advantage of this method is that resistance changes can be observed long before void formation can be seen using standard microscopy methods. In order to achieve the best efficiency using this method, special consideration must be given to the design of the sample. Design problems and their respective solutions are given. The results of the electrical resistance measurements are interpreted by means of photographs taken with an scanning electron microscope. The increase in resistance of the aluminum samples is interpreted to be due to void formation. The expected decrease in resistance near the anode was never observed. It is shown that mass accumulation takes on the form of hillocks and whiskers on the surface of the aluminum film, which does not contribute appreciably to conductivity.
PdH system electrical resistivity, studying hydrogen concentration role
Deuterium concentration effect on electrical resistivity of palladium-deuterium system
The electrical resistivities of the alloys 90at.%Pd - 10at.%Ag, 80at.%Pd - 20at.%Ag, 70at.%Pd - 30at.%Ag, 60at.%Pd - 40at.%Ag, and 50at.%Pd - 50at.%Ag were measured as functions of absorbed hydrogen x at 4.2 K. These results show a minimum in the resistivity for all the alloys except 90Pd-10Ag; they show a maximum for all the alloys except for 50Pd-Ag. We associate the shapes of the plots with a modification of the Pd D-band because of the substitutional alloying of Ag and the interstitial absorption of hydrogen.