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26 records · Page 2

SONOS Nonvolatile Memory Cell Programming Characteristics

Silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory is gaining favor over conventional EEPROM FLASH memory technology. This paper characterizes the SONOS write operation using a nonquasi-static MOSFET model. This includes floating gate charge and voltage characteristics as well as tunneling current, voltage threshold and drain current characterization. The characterization of the SONOS memory cell predicted by the model closely agrees with experimental data obtained from actual SONOS memory cells. The tunnel current, drain current, threshold voltage and read drain current all closely agreed with empirical data.

MacLeod, Todd C.

Virtual Sensor Test Instrumentation

Virtual Sensor Test Instrumentation is based on the concept of smart sensor technology for testing with intelligence needed to perform sell-diagnosis of health, and to participate in a hierarchy of health determination at sensor, process, and system levels. A virtual sensor test instrumentation consists of five elements: (1) a common sensor interface, (2) microprocessor, (3) wireless interface, (4) signal conditioning and ADC/DAC (analog-to-digital conversion/ digital-to-analog conversion), and (5) onboard EEPROM (electrically erasable programmable read-only memory) for metadata storage and executable software to create powerful, scalable, reconfigurable, and reliable embedded and distributed test instruments. In order to maximize the efficient data conversion through the smart sensor node, plug-and-play functionality is required to interface with traditional sensors to enhance their identity and capabilities for data processing and communications. Virtual sensor test instrumentation can be accessible wirelessly via a Network Capable Application Processor (NCAP) or a Smart Transducer Interlace Module (STIM) that may be managed under real-time rule engines for mission-critical applications. The transducer senses the physical quantity being measured and converts it into an electrical signal. The signal is fed to an A/D converter, and is ready for use by the processor to execute functional transformation based on the sensor characteristics stored in a Transducer Electronic Data Sheet (TEDS). Virtual sensor test instrumentation is built upon an open-system architecture with standardized protocol modules/stacks to interface with industry standards and commonly used software. One major benefit for deploying the virtual sensor test instrumentation is the ability, through a plug-and-play common interface, to convert raw sensor data in either analog or digital form, to an IEEE 1451 standard-based smart sensor, which has instructions to program sensors for a wide variety of functions. The sensor data is processed in a distributed fashion across the network, providing a large pool of resources in real time to meet stringent latency requirements.

Wang, Roy

Modeling of SONOS Memory Cell Erase Cycle

Utilization of Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) nonvolatile semiconductor memories as a flash memory has many advantages. These electrically erasable programmable read-only memories (EEPROMs) utilize low programming voltages, have a high erase/write cycle lifetime, are radiation hardened, and are compatible with high-density scaled CMOS for low power, portable electronics. In this paper, the SONOS memory cell erase cycle was investigated using a nonquasi-static (NQS) MOSFET model. Comparisons were made between the model predictions and experimental data.

Phillips, Thomas A.

CoNNeCT Baseband Processor Module

A document describes the CoNNeCT Baseband Processor Module (BPM) based on an updated processor, memory technology, and field-programmable gate arrays (FPGAs). The BPM was developed from a requirement to provide sufficient computing power and memory storage to conduct experiments for a Software Defined Radio (SDR) to be implemented. The flight SDR uses the AT697 SPARC processor with on-chip data and instruction cache. The non-volatile memory has been increased from a 20-Mbit EEPROM (electrically erasable programmable read only memory) to a 4-Gbit Flash, managed by the RTAX2000 Housekeeper, allowing more programs and FPGA bit-files to be stored. The volatile memory has been increased from a 20-Mbit SRAM (static random access memory) to a 1.25-Gbit SDRAM (synchronous dynamic random access memory), providing additional memory space for more complex operating systems and programs to be executed on the SPARC. All memory is EDAC (error detection and correction) protected, while the SPARC processor implements fault protection via TMR (triple modular redundancy) architecture. Further capability over prior BPM designs includes the addition of a second FPGA to implement features beyond the resources of a single FPGA. Both FPGAs are implemented with Xilinx Virtex-II and are interconnected by a 96-bit bus to facilitate data exchange. Dedicated 1.25- Gbit SDRAMs are wired to each Xilinx FPGA to accommodate high rate data buffering for SDR applications as well as independent SpaceWire interfaces. The RTAX2000 manages scrub and configuration of each Xilinx.

Yamamoto, Clifford K

Curiosity's Sample Analysis at Mars (SAM) Investigation: Overview of Results from the First 120 Sols on Mars

During the first 120 sols of Curiosity s landed mission on Mars (8/6/2012 to 12/7/2012) SAM sampled the atmosphere 9 times and an eolian bedform named Rocknest 4 times. The atmospheric experiments utilized SAM s quadrupole mass spectrometer (QMS) and tunable laser spectrometer (TLS) while the solid sample experiments also utilized the gas chromatograph (GC). Although a number of core experiments were pre-programmed and stored in EEProm, a high level SAM scripting language enabled the team to optimize experiments based on prior runs.

Mahaffy, P. R.

Single-Event Latchup Measurements on COTS Electronic Devices for Use in ISS Payloads

This paper reports recent single-event latchup results for a variety of microelectronic devices that include an ADC, OpAmp, EEPROM, CPLD, PWM, transceiver, voltage regulator, digital signal processor, step-down converter, buck controller and supervisory circuits. The data were collected to evaluate these devices for possible use in NASA ISS payloads.

Irom, Farokh

Disturb testing in flash memories

Non-volatile memory technology as defined by NAND architecture flash memory continues to lead the process scaling and device shrinking efforts of the entire integrated circuit industry. 45- nm technology nodes are now producing commercial 32Gb devices. These latest 32Gb devices are pioneering new charge trapping memory cell technologies using metal gates and high-k dielectric materials. These cells are called TANOS and consist of tantalum-nitride, aluminum oxide (high k material), nitride, oxide, and silicon. Such high-density memories continue to revolutionize commercial electronics in terms of new high-speed data architectures and significant reductions in overall power and weight consumption. In stark contrast, nearly all science-based interplanetary and earth-orbiting NASA spacecraft are still designing in and around mid-1980s-level non-volatile technology with 1Mb Electrically Erasable Read-Only Memory (EEPROM) devices. NASA has typically shunned the use of modern flash devices because of radiation and reliability concerns due to the commercial-offthe– shelf (COTS) nature of the NAND flash technology. Given the significant potential increases in overall system capability these modern flash devices could bring to NASA missions, it is important to continue to investigate these devices. This report will investigate certain portions of the reliability performance of NAND flash devices, specifically the disturb properties. Understanding the possible limitations such new non-volatile memory technology presents to NASA is the goal of this report.

Freie, Michael