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28 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2007

Large-Area Permanent-Magnet ECR Plasma Source

A 40-cm-diameter plasma device has been developed as a source of ions for material-processing and ion-thruster applications. Like the device described in the immediately preceding article, this device utilizes electron cyclotron resonance (ECR) excited by microwave power in a magnetic field to generate a plasma in an electrodeless (noncontact) manner and without need for an electrically insulating, microwave-transmissive window at the source. Hence, this device offers the same advantages of electrodeless, windowless design - low contamination and long operational life. The device generates a uniform, high-density plasma capable of sustaining uniform ion-current densities at its exit plane while operating at low pressure [<10(exp -4) torr (less than about 1.3 10(exp -2) Pa)] and input power <200 W at a frequency of 2.45 GHz. Though the prototype model operates at 2.45 GHz, operation at higher frequencies can be achieved by straightforward modification to the input microwave waveguide. Higher frequency operation may be desirable in those applications that require even higher background plasma densities. In the design of this ECR plasma source, there are no cumbersome, power-hungry electromagnets. The magnetic field in this device is generated by a permanent-magnet circuit that is optimized to generate resonance surfaces. The microwave power is injected on the centerline of the device. The resulting discharge plasma jumps into a "high mode" when the input power rises above 150 W. This mode is associated with elevated plasma density and high uniformity. The large area and uniformity of the plasma and the low operating pressure are well suited for such material-processing applications as etching and deposition on large silicon wafers. The high exit-plane ion-current density makes it possible to attain a high rate of etching or deposition. The plasma potential is <3 V low enough that there is little likelihood of sputtering, which, in plasma processing, is undesired because it is associated with erosion and contamination. The electron temperature is low and does not vary appreciably with power.

Foster, John E.↗
DOE OSTI2023

A compact dication source for Ba 2+ tagging and heavy metal ion sensor development

Here, we present a tunable metal ion beam that delivers controllable ion currents in the picoamp range for testing of dry-phase ion sensors. Ion beams are formed by sequential atomic evaporation and single or multiple electron impact ionization, followed by acceleration into a sensing region. Controllability of the ionic charge state is achieved through tuning of electrode potentials that influence the retention time in the ionization region. Barium, lead, and cadmium samples have been used to test the system, with ion currents identified and quantified using a quadrupole mass analyzer. Realization of a clean Ba 2+ ion beam within a bench-top system represents an important technical advance toward the development and characterization of barium tagging systems for neutrinoless double beta decay searches in xenon gas. This system also provides a testbed for investigation of novel ion sensing methodologies for environmental assay applications, with dication beams of Pb 2+ and Cd 2+ also demonstrated for this purpose.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Ion concentration ratio measurements of ion beams generated by a commercial microwave electron cyclotron resonance plasma source

A commercially available electron cyclotron resonance (ECR) plasma source (GenII Plasma Source, tectra GmbH) is widely used for surface processing. This plasma source is compatible with ultrahigh vacuum systems, and its working pressure is relatively low, around 10 –6 –10 –4 Torr even without differential pumping. Here, we report ion flux concentration ratios for each ion species in an ion beam from this source, as measured by a mass/energy analyzer that is a combination of a quadrupole mass spectrometer, an electrostatic energy analyzer, and focusing ion optics. In this study, the examined beams were those arising from plasmas produced from feed gases of H 2 , D 2 , N 2 , O 2 , Ar, and dry air over a range of input power and working pressures. H 2 (D 2 ) plasmas are widely used for nuclear fusion applications and, hence, the ion concentration ratios of H + , H 2 + , and H 3 + reported here will be useful information for research that applies this plasma source to well-controlled plasma-material interaction studies. Ion energy distributions, stability of operation, and impurity concentrations were also assessed for each of the plasma species investigated.

47 OTHER INSTRUMENTATION↗
NASA NTRS2002

Measurement of Metastable Lifetimes of Highly-Charged Ions

The present work is part of a series of measurements of metastable lifetimes of highly-charged ions (HCIs) which contribute to optical absorption, emission and energy balance in the Interstellar Medium (ISM), stellar atmospheres, etc. Measurements were carried out using the 14-GHz electron cyclotron resonance ion source (ECRIS) at the JPL HCI facility. The ECR provides useful currents of charge states such as C(sup(1-6)+), Mg(sup(1-6)+) and Fe(sup(1-17)+). In this work the HCI beam is focused into a Kingdon electrostatic ion trap for measuring lifetimes via optical decays.

Smith, Steven J.↗
DOE OSTI2023

Recent H - ion source research and development at the Oak Ridge National Laboratory

The U.S. Spallation Neutron Source (SNS) is a state-of-the-art neutron scattering facility delivering the world's most intense pulsed neutron beams to a wide array of instruments which are used to conduct investigations in many fields of science and engineering. Neutrons are produced from spallation of liquid Hg by bombardment of short (~1 μs), intense (~35 A) pulses of protons delivered at 60 Hz by a storage ring which is fed by a high-intensity, ~1 GeV H - LINAC. This facility has operated almost continuously since 2006, with ion source performance increasing over those years, and currently providing 50–60 mA of H - ions with a duty-factor of 6% for maintenance-free runs of several months with near 100% availability. Ion source research and development at ORNL has played a key role in enabling and supporting this success: this report provides an update on some of the ongoing ion source research and development efforts which have been undertaken since the previous Negative Ion Beams and Sources (NIBS) conference in 2020. These include significant improvements to H - beam current by extraction from a larger source outlet aperture and improvements to the electron dumping system which should eliminate the gradual loss of electrode voltage over the course of a run which has occasionally impacted SNS operations. Improvement and simplification of the plasma ignition system for the external antenna ion source, a long-standing problem, was also realized. Lastly, RF coupling efficiency was measured for both the SNS internal and external antenna ion sources.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS2007

Slot-Antenna/Permanent-Magnet Device for Generating Plasma

A device that includes a rectangular-waveguide/slot-antenna structure and permanent magnets has been devised as a means of generating a substantially uniform plasma over a relatively large area, using relatively low input power and a low gas flow rate. The device utilizes electron cyclotron resonance (ECR) excited by microwave power to efficiently generate plasma in a manner that is completely electrodeless in the sense that, in principle, there is no electrical contact between the plasma and the antenna. Plasmas generated by devices like this one are suitable for use as sources of ions and/or electrons for diverse material-processing applications (e.g., etching or deposition) and for ion thrusters. The absence of plasma/electrode contact essentially prevents plasma-induced erosion of the antenna, thereby also helping to minimize contamination of the plasma and of objects exposed to the plasma. Consequently, the operational lifetime of the rectangular-waveguide/ slot-antenna structure is long and the lifetime of the plasma source is limited by the lifetime of the associated charged-particle-extraction grid (if used) or the lifetime of the microwave power source. The device includes a series of matched radiating slot pairs that are distributed along the length of a plasma-source discharge chamber (see figure). This arrangement enables the production of plasma in a distributed fashion, thereby giving rise to a uniform plasma profile. A uniform plasma profile is necessary for uniformity in any electron- or ion-extraction electrostatic optics. The slotted configuration of the waveguide/ antenna structure makes the device scalable to larger areas and higher powers. All that is needed for scaling up is the attachment of additional matched radiating slots along the length of the discharge chamber. If it is desired to make the power per slot remain constant in scaling up, then the input microwave power must be increased accordingly. Unlike in prior ECR microwave plasma-generating devices, there is no need for an insulating window on the antenna. Such windows are sources of contamination and gradually become ineffective as they become coated with erosion products over time. These characteristics relegate prior ECR microwave plasma-generating devices to non-ion beam, non-deposition plasma applications. In contrast, the lack of need for an insulating window in the present device makes it possible to use the device in both ion-beam (including deposition) and electron-beam applications. The device is designed so that ECR takes place above each slot and the gradient of the magnetic field at each slot is enough to prevent backflow of plasma.

Foster, John E.↗
NASA NTRS2007

Slotted antenna waveguide plasma source

A high density plasma generated by microwave injection using a windowless electrodeless rectangular slotted antenna waveguide plasma source has been demonstrated. Plasma probe measurements indicate that the source could be applicable for low power ion thruster applications, ion implantation, and related applications. This slotted antenna plasma source invention operates on the principle of electron cyclotron resonance (ECR). It employs no window and it is completely electrodeless and therefore its operation lifetime is long, being limited only by either the microwave generator itself or charged particle extraction grids if used. The high density plasma source can also be used to extract an electron beam that can be used as a plasma cathode neutralizer for ion source beam neutralization applications.

Foster, John↗
NASA NTRS1997

Characteristics of an Electron Cyclotron Resonance Plasma Source for the Production of Active Nitrogen Species in III-V Nitride Epitaxy

A simple analysis is provided to determine the characteristics of an electron cyclotron resonance (ECR) plasma source for the generation of active nitrogen species in the molecular beam epitaxy of III-V nitrides. The effects of reactor geometry, pressure, power, and flow rate on the dissociation efficiency and ion flux are presented. Pulsing the input power is proposed to reduce the ion flux.

Meyyappan, Meyya↗
NASA NTRS1993

Low Earth orbital atomic oxygen environmental simulation facility for space materials evaluation

Simulation of low Earth orbit atomic oxygen for accelerated exposure in ground-based facilities is necessary for the durability evaluation of space power system component materials for Space Station Freedom (SSF) and future missions. A facility developed at the National Aeronautics and Space Administrations's (NASA) Lewis Research Center provides accelerated rates of exposure to a directed or scattered oxygen beam, vacuum ultraviolet (VUV) radiation, and offers in-situ optical characterization. The facility utilizes an electron-cyclotron resonance (ECR) plasma source to generate a low energy oxygen beam. Total hemispherical spectral reflectance of samples can be measured in situ over the wavelength range of 250 to 2500 nm. Deuterium lamps provide VUV radiation intensity levels in the 115 to 200 nm range of three to five equivalent suns. Retarding potential analyses show distributed ion energies below 30 electron volts (eV) for the operating conditions most suited for high flux, low energy testing. Peak ion energies are below the sputter threshold energy (approximately 30 eV) of the protective coatings on polymers that are evaluated in the facility, thus allowing long duration exposure without sputter erosion. Neutral species are expected to be at thermal energies of approximately .04 eV to .1 eV. The maximum effective flux level based on polyimide Kapton mass loss is 4.4 x 10 exp 6 atoms/((sq. cm)*s), thus providing a highly accelerated testing capability.

Stidham, Curtis R.↗
DOE OSTI2024

Investigation of Materials for Radio Frequency Antenna Plasma Facing Components

Here, the interaction of radio frequency (RF) sheaths with fusion reactor relevant materials (e.g., tungsten and titanium diboride) is being studied on the RF Plasma Interaction Experiment (RF PIE). The RF PIE consists of an electron cyclotron resonance (ECR) plasma source (2.45 GHz, 5 kW) with a biased and heated RF electrode that is used to simulate antenna surfaces in contact with the edge plasma. Helium plasmas (density of ~1e18/m 3 , electron temperature of 4–5 eV) are being used to explore sheath formation on material surfaces with biases up to 500 V. The erosion of a tungsten surface is being studied spectroscopically using a mirror-linked 1 m Czerny-Turner UV imaging spectrometer with a spectral resolution of 0.012 nm for measuring plasma emission in and near the sheath. Tungsten line emission intensity is higher for RF versus dc biasing for similar plasma conditions and average ion energy. RF biasing causes a broadening of the ion energy distribution function (IEDF) due to the RF sheath, as determined from the hPIC2 code, and results in enhanced sputtering. Calculations of the expected sputtering yield for dc and RF biasing are consistent with experimental observations of changes in the 400.9 nm tungsten line emission intensity as a function of ion energy.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗