SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
We compare differences in parametric degradation for CCDs irradiated to the same displacement damage dose with 10-MeV and 50-MeV electrons. Charge transfer efficiency degradation was observed to not scale with NIEL for small signals.
The purpose of this study was to examine the displacement damage susceptibility of the OMT1090 optical switch manufactured by TT Electronics / OPTEK Technology Inc. and compare it to the results of the OPB847TXV.
This paper discusses radiation testing requirements for ionization and displacement damage in space systems.
Effects of displacement damage and ionization damage induced by gamma irradiation on the dark current and impulse response of a high-bandwidth low breakdown voltage Si Avalanche Photodiode has been investigated using picosecond laser microscopy. At doses as high as 10Mrad (Si) minimal alteration in the impulse response and bandwidth were observed. However, dark current measurements also performed with and without biased irradiation exhibit anomalously large damage factors for applied biases close to breakdown. The absence of any degradation in the impulse response is discussed as are possible mechanisms for higher dark current damage factors observed for biased irradiation.
The enhancement of displacement damage energy deposition due to secondary neutrons, pions, deuterons, and alphas resulting from high energy proton interactions with aluminium and tungsten shielding are examined in this paper.
This paper examines the enhancement of displacement damage energy deposition due to secondary neutrons, pions, deuterons, and alphas resulting from high energy (100-1000MeV) proton interactions with aluminum and tungsten shielding.
This study focuses on displacement damage induced dark current and Random Telegraph Signal (RTS) in STMicroelectronics P-Type photogate, a device moving away from the 4T Pinned-Photodiode, with a sensitive volume exclusively made of boron-doped P-type epitaxy, and collecting holes instead of electrons. Results show a typical trend for the shape of dark current and RTS degradation in CMOS Image Sensors with the exception that the measured generation rates seem 2 times smaller than typical literature values in irradiated silicon. Different hypothesis on the origin of this discrepancy are explored.
The effects of proton displacement damage on light-emitting diodes and laser diodes are discussed, comparing the radiation sensitivity of current technology devices with older devices for which data exists in the literature.
We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to proton and heavy ion-induced single-event effects (SEE), proton-induced displacement damage (DD), and total ionizing dose (TID). This paper is a summary of test results.
The purpose of this testing is to provide preliminary characterization of the displacement damage and total ionizing dose effects via 63 MeV protons on InGaAs PIN photodiodes fabricated and assembled by Excelitas for use in a LIDAR system. The testing is being conducted to determine the susceptibility of the component to the radiation environment that it will be exposed to during mission duration.
A theoretical model for computing the displacement damage defect density and the short-circuit current (I sub sc) degradation in proton-irradiated (AlGa)As-GaAs p-n junction solar cells is presented. Assumptions were made with justification that the radiation induced displacement defects form an effective recombination center which controls the electron and hole lifetimes in the junction space charge region and in the n-GaAs active layer of the irradiated GaAs p-n junction cells. The degradation of I sub sc in the (AlGa)As layer was found to be negligible compared to the total degradation. In order to determine the I sub sc degradation, the displacement defect density, path length, range, reduced energy after penetrating a distance x, and the average number of displacements formed by one proton scattering event were first calculated. The I sub sc degradation was calculated by using the electron capture cross section in the p-diffused layer and the hole capture cross section in the n-base layer as well as the wavelength dependent absorption coefficients. Excellent agreement was found between the researchers calculated values and the measured I sub sc in the proton irradiated GaAs solar cells for proton energies of 100 KeV to 10 MeV and fluences from 10 to the 10th power p/square cm to 10 to the 12th power p/square cm.
This paper presents a method for using the SPENVIS on-line computational suite to implement the displacement damage dose (D(sub d)) methodology for calculating end-of-life (EOL) solar cell performance for a specific space mission. This paper builds on our previous work that has validated the D(sub d) methodology against both measured space data [1,2] and calculations performed using the equivalent fluence methodology developed by NASA JPL [3]. For several years, the space solar community has considered general implementation of the D(sub d) method, but no computer program exists to enable this implementation. In a collaborative effort, NRL, NASA and OAI have produced the Solar Array Verification and Analysis Tool (SAVANT) under NASA funding, but this program has not progressed beyond the beta-stage [4]. The SPENVIS suite with the Multi Layered Shielding Simulation Software (MULASSIS) contains all of the necessary components to implement the Dd methodology in a format complementary to that of SAVANT [5]. NRL is currently working with ESA and BIRA to include the Dd method of solar cell EOL calculations as an integral part of SPENVIS. This paper describes how this can be accomplished.
Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear, and hybrid devices.
Sensitivity of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
Modern semiconductor devices, such as gate-all-around nanosheet field-effect transistors (GAA NS FETs), are smaller than displacement damage cascades from fission neutrons. In this regime, device failure may occur through low-probability single events, rather than by parametric degradation previously seen in larger devices. Here, we present a statistical model that predicts the probability of a damage event in a small device and the probability distribution of the magnitude, i.e., number of displacements within the device, from each event. The model is developed first for neutron irradiation and then for energetic ion irradiation. The model is consistent with results from recent experiments in which lithium-ion irradiation produced stepwise increases in subthreshold current in GAA NS FETs.
We present data on the vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage. Devices tested include optoelectronics, digital, analog, linear bipolar devices, hybrid devices, Analog-to-Digital Converters (ADCs), and Digital-to-Analog Converters (DACs), among others.