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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRSDate not supplied

Bond Line Thickness Estimation in Composite Structures Using Multiple Inspection Techniques

Imaging and other nondestructive evaluation techniques are commonly used for material characterization and defect recognition in safety critical aerospace applications, with data fusion providing the framework for uncertainty quantification in these contexts. Most commonly, forward physics-based modeling predicts the response conditioned on material properties and defect assumptions, and probabilistic methods are used to infer the hidden state of subject of the inspection from a combination of prior information, likelihoods, and inspection data. In this paper Bayesian methods are used to estimate bond thickness in lap joints comprised of aluminum adherends using a combination of infrared thermography, digital radiography, and ultrasound. The accuracy of the fused estimates are validated against data generated from synthetic specimens, and by comparison against high resolution X-ray computed tomography inspections of built specimens.

thermal nondestructive evaluation↗
NASA NTRS1993

Ballistic-Electron-Emission Microscopy Techniques for Nanometer-scale Characterization of Interfaces

Semiconductor interface properties are among the most important phenomena in materials science and technology. The study of metal/semiconductor Schottky barrier interfaces has been the primary focus of a large research and development community for decades. Throughout the long history of interface investigation, the study of interface defect electronic properties have been seriously hindered by the fundamental experimental difficulty of probing subsurface structures. A new method, Ballistic-Electron-Emission Microscopy (BEEM), has been developed which not only enables spectroscopic probing of subsurface interface properties, but also, provides nanometer-resolution imaging capabilities. BEEM employs Scanning Tunneling Microscopy (STM) and a unique spatially localized ballistic electron spectroscopy method...

Bell, L. D.↗
NASA NTRS1975

Space processing of crystals for opto-electronic devices: The case for solution growth

The results obtained during a six month program aimed at determining the viability of space processing in the 1980's of dielectric-elastic-magnetic single crystals were described. The results of this program included: identification of some important emerging technologies dependent on dielectric-elastic-magnetic crystals, identification of the impact of intrinsic properties and defects in the single crystals on system performance, determination of a sensible common basis for the many crystals of this class, and identification of the benefits of micro-gravity and some initial experimental evidence that these benefits can be realized in space. It is concluded that advanced computers and optical communications are at a development stage for high demand of dielectric-elastic-magnetic single crystals in the mid-1980's. Their high unit cost and promise for significantly increased perfection by growth in space justified pursuit of space processing.

Hayden, S. C.↗
NASA NTRS1975

Radiation effects on beta 10.6 of pure and europium doped KCl

Changes in the optical absorption coefficient as a result of X-ray and electron bombardment of pure KCl (monocrystalline and polycrystalline), and divalent europium doped polycrystalline KCl were determined. The optical absorption coefficients were measured by a constant heat flow calorimetric method. Both 300 KV X-irradiation and 2 MeV electron irradiation produced significant increases in beta 10.6, measured at room temperature. The X-irradiation of pure moncrystalline KCl increased beta 10.6 by 0.005/cm for a 113 MR dose. For an equivalent dose, 2 MeV electrons were found less efficient in changing beta 10.6. However, electron irradiation of pure and Eu-doped polycrystalline KCl produced marked increases in adsorption. Beta increased to over 0.25/cm in Eu-doped material for a 30 x 10 to the 14th power electrons/sq cm dose, a factor of 20 increase over unirradiated material. Moreover, bleaching the electron irradiated doped KCl with 649 m light produced and additional factor of 1.5 increase. These findings will be discussed in light of known defect-center properties in KCl.

Grimes, H. H.↗
NASA NTRS1981

Electronic properties of deep-level defects in proton irradiated AlGaAs-GaAs solar cells

Deep level transient spectroscopy and capacitance voltage techniques as well as analysis of the forward current voltage (I-V) characteristics and SEM-EIC data were carried out for proton irradiated GaAs solar cells over a wide range of proton energies and proton fluences. Defect and recombination parameters such as defect energy levels and density, carrier capture cross sections and lifetimes as well as diffusion lengths in the undoped n-GaAs LPE layers were determined. Good correlation between these defect parameters and solar cell performance parameters was obtained for GaAs solar cells irradiated by 200 and 290 KeV protons. It was found that 200 to 290 KeV protons will produce the most defects and damages to the GaAs solar cell structure used. The influence of the low temperature (200 to 400 C) periodic thermal annealing on the deep level defects and the performance of the 200 KeV proton irradiated cells is discussed.

Li, S. S.↗
NASA NTRS1992

Simulation studies for surfaces and materials strength

The progress report for the period May 1, 1992 to October 31, 1992 is presented. During this period investigations were carried out in three areas. Binding energies and high energy binding sites were calculated for carbon atoms deposited on a (2 x 1) dimerized Si(100) surface. Structure- and energy-related properties of defects formed on relaxed diamond surfaces were investigated. Tersoff-type model functions for Si were employed to investigate the energetics of the following processes: (1) neutral monovacancy and divacancy formation and migration energies; (2) neutral bond-centered, site sharing, tetrahedral, and hexagonal self-interstitial formation and migration energies; and (3) the variation of these energies with distance from a bulk site of Frenkel defect formation and from (100) and (111) surfaces. Calculations are included in the appendices.

Halicioglu, Timur↗
NASA NTRS2016

Water in the Cratonic Mantle Lithosphere

The fact that Archean and Proterozoic cratons are underlain by the thickest (>200 km) lithosphere on Earth has always puzzled scientists because the dynamic convection of the surrounding asthenosphere would be expected to delaminate and erode these mantle lithospheric "keels" over time. Although density and temperature of the cratonic lithosphere certainly play a role in its strength and longevity, the role of water has only been recently addressed with data on actual mantle samples. Water in mantle lithologies (primarily peridotites and pyroxenites) is mainly stored in nominally anhydrous minerals (olivine, pyroxene, garnet) where it is incorporated as hydrogen bonded to structural oxygen in lattice defects. The property of hydrolytic weakening of olivine [4] has generated the hypothesis that olivine, the main mineral of the upper mantle, may be dehydrated in cratonic mantle lithospheres, contributing to its strength. This presentation will review the distribution of water concentrations in four cratonic lithospheres. The distribution of water contents in olivine from peridotite xenoliths found in kimberlites is different in each craton (Figure 1). The range of water contents of olivine, pyroxene and garnet at each xenolith location appears linked to local metasomatic events, some of which occurred later then the Archean and Proterozoic when these peridotites initially formed via melting. Although the low olivine water contents (<10 ppm wt H2O) at > 6 GPa at the base of the Kaapvaal cratonic lithosphere may contribute to its strength, and prevent its delamination, the wide range of those from Siberian xenoliths is not compatible with providing a high enough viscosity contrast with the asthenophere. The water content in olivine inclusions from Siberian diamonds, on the other hand, have systematically low water contents (<20 ppm wt H2O). The xenoliths may represent a biased sample of the cratonic lithosphere with an over-­abundance of metasomatized peridotites with high water contents. The olivine inclusions, however, may have been protected from metasomatism by their host diamond and record the overall low olivine water content of the cratonic lithosphere. Water may thus still play a role in cratonic keel longevity.

Peslier, A. H.↗
NASA NTRS2024

Correlations of Additive Manufacturing Model-Based Process Metrics With Spatter-Induced Porosity in the Powder Bed Fusion-Laser Beam/Metallic Process

Components fabricated using the powder bed fusion laser beam metallic (PBF-LB/M) additive manufacturing (AM) process comprise a multitude of sequential weld passes. Qualifying materials for components in critical applications requires a thorough understanding of pertinent processing-microstructure-property relationships. Porosity defects have a strong adverse effect on the mechanical properties of a material. The morphology of porosity defects created by lack of fusion in PBF-LB/M often exhibit high aspect ratios that can act as stress concentrators and become crack initiation sites. The occurrence of spatter induced porosity is studied using synchronized AM model-based process metrics and porosity measured by high-resolution X-ray computed tomography. A novel AM process metric is introduced to quantify the relative exposure to spatter ejecta impacts and incorporation throughout the sequence of the PBF-LB/M process. Further characterization using optical metallography and scanning electron microscopy indicated that both keyhole and lack of fusion porosity correlated statistically with the spatter ejecta impact field of the PBF-LB/M process. Both keyhole and lack of fusion porosity can be predicted by the spatter exposure process metric, which can be exploited to control the fusion sequence.

Additive Manufacturing↗
NASA NTRSDate not supplied

Correlations Between Porosity, Spatter, and Process Metrics for Powder Bed Fusion Laser Beam Metallic Additive Manufacturing

Components fabricated using the powder bed fusion laser beam metallic (PBF-LB/M)additive manufacturing process are the result of a multitude of weld passes conducted sequentially. Qualifying components for aerospace applications requires a thorough understanding of the process-structure-properties relationships. Porosity defects are known to have a strong adverse effect on the mechanical properties of a component. In particular, porosity defects created by lack of fusion have high aspect ratio morphologies leading to stress concentrations that become crack initiation sites. In the present work, the occurrence of spatter induced lack of fusion porosity was studied using synchronized in-situ process monitoring, additive manufacturing model-based process metrics, and high-resolution X-ray computed tomography. The results show that lack of fusion porosity is statistically correlated with unremoved welding spatter ejecta of the PBF-LB/M process and process metrics related to the hatching strategy.

Qualification↗
NASA NTRS1994

Composite Material Property Nondestructive Characterization Using Obliquely Insonified Ultrasonic Waves

The analysis of reflected ultrasonic waves induced by oblique insonification of composite materials is a powerful tool for providing informations about defects and material properties. A device was developed to manipulate a pair of transmitting and receiving transducers at vrious angles of wave incidence and propagation with the fiber orientation.

Non-Destructive Evaluation Composites Mechanical P↗
NASA NTRS1995

Electronic characterization of defects in narrow gap semiconductors: Comparison of electronic energy levels and formation energies in mercury cadmium telluride, mercury zinc telluride, and mercury zinc selenide

The project has evolved to that of using Green's functions to predict properties of deep defects in narrow gap materials. Deep defects are now defined as originating from short range potentials and are often located near the middle of the energy gap. They are important because they affect the lifetime of charge carriers and hence the switching time of transistors. We are now moving into the arena of predicting formation energies of deep defects. This will also allow us to make predictions about the relative concentrations of the defects that could be expected at a given temperature. The narrow gap materials mercury cadmium telluride (MCT), mercury zinc telluride (MZT), and mercury zinc selenide (MZS) are of interest to NASA because they have commercial value for infrared detecting materials, and because there is a good possibility that they can be grown better in a microgravity environment. The uniform growth of these crystals on earth is difficult because of convection (caused by solute depletion just ahead of the growing interface, and also due to thermal gradients). In general it is very difficult to grow crystals with both radial and axial homogeneity.

Patterson, James D.↗
NASA NTRS1984

Oxygen in GaAs - Direct and indirect effects

Oxygen has profound effects on the key electronic properties and point defects of GaAs crystals. Thus, when added in the growth system, it decreases the free electron concentration and enhances the concentration of deep donors in the resulting crystals. Both of these effects are highly beneficial for achieving semi-insulating material and have been utilized for that purpose. They have been attributed to the tendency of oxygen to getter silicon impurities during crystal growth. Only recently, it has been found that oxygen in GaAs introduces also a midgap level, ELO, with essentially the same activation energy as EL2 but with four times greater electron capture cross section. The present report reassesses the electrical and optical properties of the midgap levels in GaAs crystals grown by the horizontal Bridgman (HB) and the Czochralski-LEC techniques. Emphasis is placed on the identification of the specific effects of ELO.

Gatos, H. C.↗
NASA NTRS1993

Defects in electro-optically active polymer solids

There is considerable current interest in the application of organic and polymeric materials for electronic and photonic devices. The rapid, non-linear optical (NLO) response of these materials makes them attractive candidates for waveguides, interferometers, and frequency doublers. In order to realize the full potential of these systems, it is necessary to develop processing schemes which can fabricate these molecules into ordered arrangements. There is enormous potential for introducing well-defined, local variations in microstructure to control the photonic properties of organic materials by rational 'defect engineering.' This effort may eventually become as technologically important as the manipulation of the electronic structure of solid-state silicon based devices is at present. The success of this endeavor will require complimentary efforts in the synthesis, processing, and characterization of new materials. Detailed information about local microstructure will be necessary to understand the influence of symmetry breaking of the solid phases near point, line, and planar defects. In metallic and inorganic polycrystalline materials, defects play an important role in modifying macroscopic properties. To understand the influence of particular defects on the properties of materials, it has proven useful to isolate the defect by creating bicrystals between two-component single crystals. In this way the geometry of a grain boundary defect and its effect on macroscopic properties can be determined unambiguously. In crystalline polymers it would be valuable to establish a similar depth of understanding about the relationship between defect structure and macroscopic properties. Conventionally processed crystalline polymers have small crystallites (10-20 nm), which implies a large defect density in the solid state. Although this means that defects may play an important or even dominant role in crystalline or liquid crystalline polymer systems, it also makes it difficult to isolate the effect of a particular boundary on a macroscopically observed property. However, the development of solid-state and thin-film polymerization mechanisms have facilitated the synthesis of highly organized and ordered polymers. These systems provide a unique opportunity to isolate and investigate in detail the structure of covalently bonded solids near defects and the effect of these defects on the properties of the material. The study of defects in solid polymers has been the subject of a recent review (Martin, 1993).

Martin, David C.↗
NASA NTRS1974

Phonons in quantum solids with defects

A formalism was developed for temperature-dependent, self-consistent phonons in quantum solids with defects. Lattice vacancies and interstitials in solid helium and metallic hydrogen, as well as electronic excitations in solid helium, were treated as defects that modify properties of these systems. The information to be gained from the modified phonon spectrum is discussed.

Jacobi, N.↗