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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Experimental approaches for improving SiGe thermoelectric efficiency at JPL

Efforts to improve the thermoelectric efficiency of silicon-germanium alloys are discussed. These efforts are essentially focused on substantially enhancing carrier concentration levels and thus increasing the power factor values of n-type materials. With the help of thermodynamic phase diagram calculations, a combination of various crystal growth and dopant saturation techniques is used for this purpose. Bulk polycrystal growth of double-doped materials is achieved by zone leveling while a new method (the traveling heater method) for high-quality single-crystal growth of SiGe is being developed. Thin films of homogeneous single-crystalline multidoped Si80Ge20 have also been successfully grown from low-temperature melts to investigate combined dopant solid solubility variations. Very high carrier concentration levels were obtained by (P+As)-combined diffusion in zone-leveled and hot-pressed materials. The good overall understanding of doping mechanisms which has been achieved should enable optimization of the thermoelectric properties over this extended carrier concentration range. Reductions in thermal conductivity are being sought by introduction of very small phonon scattering centers (inert material) in the initial powders-precursors of Si-Ge alloys. This approach should benefit both n- and p-type materials.

Borshchevsky, Alex↗
NASA NTRS2003

High-Temperature Sprayable Phosphor Coating Developed for Measuring Surface Temperatures

The use of phosphor thermography for noncontact temperature measurements in harsh environments has been proven over the last decade, but it has suffered from difficult application procedures such as vapor deposition or sputtering techniques. We have developed a high-temperature-sensitive paint that is easily applied with commercially available paint-spraying equipment and have successfully demonstrated it to temperatures up to 1500 C. Selected phosphors have also shown measurable signals to 1700 C, thus allowing a combination of phosphors to be used in high-temperature binders to make surface temperature measurements from ambient to over 1500 C. Phosphor thermography is an optical technique that measures the time response of fluorescence light, which is a function of the phosphor temperature. The phosphors are excited with short wavelength light (ultraviolet or blue), and they emit light at a longer wavelength. This technique has a benefit over other temperature measurements, such as thermocouples and infrared thermography, in difficult environments such as high blackbody backgrounds, vibration, flames, high electromagnetic noise, or where special windows may be needed. In addition, the sprayable phosphor paints easily cover large or complicated structures, providing full-surface information with a single measurement. Oak Ridge National Laboratories developed and tested the high-temperature binders and phosphors under the direction of the NASA Glenn Research Center. Refractory materials doped with rare earth metals were selected for their performance at high temperature. Survivability, adhesion, and material compatibility tests were conducted at high temperatures in a small furnace while the fluorescent response from the phosphors was being measured. A painted sample in a furnace with a clearly visible fluorescing dot excited by a pulsed laser is shown. Measuring the decay time of this fluorescence yields the surface temperature. One new paint was recently tested in a rocket test stand at Glenn. The floor of a square duct nozzle was painted, and full-field lifetime decay measurements were acquired for multiple firings of the rocket. Good agreement with predicted results was obtained, matching temperature gradients along the length of the nozzle and clearly showing shock structures. These good results were very satisfactory given that the measurements were made looking through the combustion plume. Infrared pyrometry was incapable of making the surface measurements because of the interference from the rocket exhaust, which contaminated the infrared signature.

Bencic, Timothy J.↗
NASA NTRS1984

Influence of oxygen on defect production in electron-irradiated, boron-doped silicon

Deep level transient spectroscopy (DLTS) measurements were made on float-zone and crucible-grown, boron-doped silicon irradiated with 1-MeV electrons. The minority carrier trap attributed to a boron-related state, was not seen in low-resistivity, float-zone silicon. However, a new majority carrier trap was observed in these samples. In the case of more lightly doped material the minority carrier trap was present, and its introduction rate was lower in float-zone than in crucible-grown silicon. For 1- and 10-ohm-cm float-zone material that was oxidized during processing, the introduction rates for this trap were comparable to those for crucible-grown silicon. This behavior indicates that the minority carrier trap involves oxygen and that it may be due to a boron-oxygen complex. The majority carrier trap seen in heavily doped, float-zone silicon may also involve boron but not oxygen. Observed trap concentrations suggest that oxygen content in the regions examined by DLTS is affected by processing techniques. Other differences were observed in defect production and annealing behavior of electron-irradiated, float-zone and crucible-grown silicon.

Deangelis, H. M.↗
NASA NTRS1997

Raman and Photoluminescence Spectroscopy of Er(3+) Doped Heavy Metal Oxide Glasses

The potential applications of rare-earth ion doped materials include fiber lasers which can be pumped conveniently by infrared semiconductor laser diodes. The host material systems most widely studied are fluoride crystals and glasses because fluorides have low nonradiative relaxation rates due to their lower phonon energies. However, the mechanical strength, chemical durability and temperature stability of the oxide glasses are generally much better than fluoride glasses. The objective of this research was to investigate the optical and spectroscopic properties of Er(3+)-doped lead-germanate and lead-tellurium-germanate glasses. The maximum vibrational energy of lead-tellurium-germanate glasses are in the range of 740-820/cm, intermediate between those of silicate (1150/cm) and fluoride (530/cm) glasses.

Dyer, Keith↗
NASA NTRS1966

Chromium oxide coatings improve thermal emissivity of alumina

Chromium oxide coatings improve thermal radiation characteristics of alumina-coated heater-cathode systems in vacuum tubes. Chromium oxide is applied either as a surface layer or as a doping material. The new coatings eliminate the high temperature migration problems of carbon surface treatments.

Upshaw, V.↗
NASA NTRS1972

The observation of damage regions produced by neutron irradiation in lithium-doped silicon solar cells.

Study regions of lattice disorder produced in lithium-doped float-zone melted n/p-type silicon solar cells by irradiation with monoenergetic neutrons at doses between 10 to the 10th and 10 to the 13th per cu cm. The defect regions were revealed by chemically etching the surface of the solar cells and by observing carbon replicas in an electron microscope. It was found that the defect density increased with increasing irradiation dose and increased lithium content, whereas the average defect diameter was found to decrease. From thermal annealing experiments it was found that in the lithium-doped material the defect structure was stable at temperatures between 300 and 1200 K. This was found to be in contrast to the undoped material where at the lowest doses considerable annealing was observed to occur. These results are discussed in terms of the theoretical predictions and models of defect clusters proposed by Gossick (1959) and Crawford and Cleland (1959).

Ghosh, S.↗
NASA NTRS1982

Some characteristics of polymers in composite materials and as electrical conductors

The characteristics of carbon fibers (CF) made from polyacrylonitrile (PAN) materials are discussed, together with research on conducting polymers. CF materials have better mechanical properties, chemical inertness, and higher stiffness than metallic materials but are subject to environmental instability, flammability, and delamination fatigue. Polymerization procedures for the monopolymer PAN are described, noting the use of SEM and X-ray diffraction techniques for studying the fiber structure. High modulus and strength of CF are caused by covalent sp(2) bonds in hexagonal carbon rings, which are stronger than the same links in diamonds. Details of the molecular chain structures and macroformations, stress-strain as a function of temperature, and thermosetting and glass transition temperatures of polymers are provided. Computational quantum chemistry techniques are being applied to studying electrical conductance in polymers, mainly to discover ways to stabilize the materials. Doped CH(x) has exhibited photovoltaic properties and other polymers have become superconductors at cryogenic temperatures.

Hansen, C. F.↗
NASA NTRS1986

Method of fabricating an imaging X-ray spectrometer

A process for fabricating an X-ray spectrometer having imaging and energy resolution of X-ray sources is discussed. The spectrometer has an array of adjoinging rectangularly shaped detector cells formed in a silicon body. The walls of the cells are created by laser drilling holes completely through the silicon body and diffusing n(+) phosphorous doping material therethrough. A thermally migrated aluminum electrode is formed centrally through each of the cells.

Alcorn, G. E.↗
NASA NTRS1995

InGaAs/InP solar cells for space application

The effects of irradiation of In(0.53)Ga(0.47)As/InP (InGaAs/InP) solar cells illuminated through a transparent InP substrate with 1 MeV electrons were measured. These solar cells were developed for bottom cells in tandem solar photovoltaic cell structures. Some InGaAs/InP heterostructures with four layers were grown by liquid phase epitaxy. The structure of the solar cells allowed lightly doped materials in n and p photoactive layers to be used. The base dopant levels ranged from 1.10(exp 17) to 5.10(exp 17) cm(exp -3). The open circuit voltage and the short circuit current were moderately degraded after irradiation with 10(exp 16) cm(exp-2) 1 MeV electrons. This behavior is explained in terms of the device structure and the n and p layer thicknesses.

Karlina, L. B.↗
NASA NTRS1996

Observations of Dynamic Strain Aging in Polycrystalline NiAl

Dynamic strain aging has been investigated at temperatures between 77 and 1100 K in eight polycrystalline NiAl alloys. The 0.2% offset yield stress and work hardening rates for these alloys generally decreased with increasing temperature. However, local plateaus or maxima were observed in conventional purity and carbon doped alloys at intermediate temperatures (600-900 K). This anomalous behavior was not observed in low interstitial high-purity, nitrogen doped, or in titanium doped materials. Low or negative strain rate sensitivities (SRS) were also observed in all eight alloys in this intermediate temperature range. Coincident with the occurrence of negative SRS was the occurrence of serrated flow in conventional purity alloys containing high concentrations of Si in addition to C. These phenomena have been attributed to dynamic strain aging (DSA). Chemical analysis of the alloys used in this study suggests that the main species causing strain aging in polycrystalline NiAl is C but indicate that residual Si impurities can enhance the strain aging effect.

Weaver, M. L.↗
NASA NTRS1997

Flashlamp-pumped Ho:Tm:Cr:LuAG laser

A room temperature solid-state laser is provided. A laser crystal is disposed in a laser cavity. The laser crystal has a LuAG host material doped with a concentration of about 0.35% Ho ions, about 5.57% Tm ions and at least about 1.01% Cr ions. A broadband energizing source such as a flashlamp is disposed transversely to the laser crystal to energize the Ho ions, Tm ions and Cr ions.

Jani, Mahendra G.↗
NASA NTRS1986

Reactively-sputtered zinc semiconductor films of high conductivity for heterojunction devices

A high conductivity, n-doped semiconductor film is produced from zinc, or Zn and Cd, and group VI elements selected from Se, S and Te in a reactive magnetron sputtering system having a chamber with one or two targets, a substrate holder, means for heating the substrate holder, and an electric field for ionizing gases in the chamber. Zinc or a compound of Zn and Cd is placed in the position of one of the two targets and doping material in the position of the other of the two targets. Zn and Cd may be placed in separate targets while a dopant is placed in the third target. Another possibility is to place an alloy of Zn and dopant, or Zn, Cd and dopant in one target, thus using only one target. A flow of the inert gas is ionized and directed toward said targets, while a flow of a reactant gas consisting of hydrides of the group VI elements is directed toward a substrate on the holder. The targets are biased to attract negatively ionized inert gas. The desired stochiometry for high conductivity is achieved by controlling the temperature of the substrate, and partial pressures of the gases, and the target power and total pressure of the gases in the chamber.

Stirn, Richard J.↗
NASA NTRS1988

Improved GaP doped SiGe thermoelectric material

Work at TECO has independently confirmed the early results obtained at JPL that high-temperature heat-treatment of SiGe/GaP alloys can significantly increase the figure of merit Z of these alloys. Several possible reasons for this improvement are given. Experiments are in progress to test these various hypothesis.

Vandersande, Jan W.↗
NASA NTRS1998

Raman and Photoluminescence Spectroscopy of Nano-crystalline PbTiO3 Sensor Materials with Different Doping Ions

Raman spectra & photoluminescence studies in PbTiO3, have been carried out, as a function of particle size, temperature, pressure and dopants. There appears respectively a distinct temperature-induced soft mode phase transition in each sample whose Curie temperature can be determined from the mean-field theory. The detailed Curie temperature shift in the modified PbTiO3 ceramics by Ba, Sr, La and Zr, has been investigated as a function of particle size. Pressure-induced phase transitions display an obvious diffuse behavior. Room temperature photoluminescence for nanocrystalline Ba(1-x)Pb(x)TiO3 have been observed. These studies favor preparations of high efficiency PbTiO3 sensors.

Katiyar, R. S.↗
NASA NTRS1988

Micromachining Of Silicon

Etching rates of alloys and heavily-doped semiconductor materials significantly higher than lightly doped semiconductor if proper etching system used. Selectivity used to etch regions of semiconductor preferentially while not etching other unmasked regions. When selective etching used with laser-induced-diffusion techniques, possible to make structures that cannot be made at present. Possible to produce well-defined structures in and through wafer while not damaging existing structures on wafer.

Dickman, John E.↗
NASA NTRS2012

Flexible Thin Metal Film Thermal Sensing System

A flexible thin metal film thermal sensing system is provided. A thermally-conductive film made from a thermally-insulating material is doped with thermally-conductive material. At least one layer of electrically-conductive metal is deposited directly onto a surface of the thermally-conductive film. One or more devices are coupled to the layer(s) to measure an electrical characteristic associated therewith as an indication of temperature.

Thomsen, Donald Laurence↗
NASA NTRS1990

Microstructure and magnetization of doped Y-Ba-Ca-O materials prepared by melt quench and post annealing method

Y-Ba-Cu-O bulk materials prepared using the melt quench and post annealing method were shown to have very high maximum as well as remanent magnetization. Studies were carried out on materials prepared using this method which deviate from the Y:Ba:Cu = 1:2:3 stoichiometry. In one series of materials, only the stoichiometry was changed, in particular by introducing an excess of yttrium. In other cases, dopants including several rare earths were introduced. Effects of variations in composition on microstructure and phase evolution are discussed, as well as effects on the magnetic susceptibility and on the magnetization. The results show that doped materials can exhibit improvements in magnetic properties. Furthermore, the use of dopants sheds light on the role of defect sites in flux pinning.

Hojaji, H.↗
NASA NTRS2009

NiF2/NaF:CaF2/Ca Solid-State High-Temperature Battery Cells

Experiments and theoretical study have demonstrated the promise of all-solid-state, high-temperature electrochemical battery cells based on NiF2 as the active cathode material, CaF2 doped with NaF as the electrolyte material, and Ca as the active anode material. These and other all-solid-state cells have been investigated in a continuing effort to develop batteries for instruments that must operate in environments much hotter than can be withstood by ordinary commercially available batteries. Batteries of this type are needed for exploration of Venus (where the mean surface temperature is about 450 C), and could be used on Earth for such applications as measuring physical and chemical conditions in geothermal wells and oil wells. All-solid-state high-temperature power cells are sought as alternatives to other high-temperature power cells based, variously, on molten anodes and cathodes or molten eutectic salt electrolytes. Among the all-solid-state predecessors of the present NiF2/NaF:CaF2/Ca cells are those described in "Solid-State High-Temperature Power Cells" (NPO-44396), NASA Tech Briefs, Vol. 32, No. 5 (May 2008), page 40. In those cells, the active cathode material is FeS2, the electrolyte material is a crystalline solid solution of equimolar amounts of Li3PO4 and LiSiO4, and the active anode material is Li contained within an alloy that remains solid in the intended high operational temperature range.

West, William↗