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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Spectroscopic performance of Low-Gain Avalanche Diodes for different types of radiation

LGADs (Low-Gain Avalanche Diodes or Detectors) are a type of silicon Avalanche Photo-Diodes originally developed for the fast detection of minimum ionizing particles in high-energy physics experiments. Thanks to their fast timing performance, the LGAD paradigm enables detectors to accurately measure minimum ionizing particles with a timing resolution of a few tens of picoseconds. Such a performance is due to a thin substrate and the presence of a moderate signal gain. This internal gain of a few tens is enough to compensate for the reduced charge deposition in the thinner substrate and the noise of fast read-out systems. While LGADs are optimized for the detection of minimum ionizing particles for high-energy particle detectors, it is critical to study their performance for the detection of different types of particle, such as X-rays, gamma-rays, or alphas. In this paper, we evaluate the gain of three types of LGADs: two devices with different geometries and doping profiles fabricated by Brookhaven National Laboratory, and one fabricated by Hamamatsu Photonics with a different process. Since the gain in LGADs depends on the bias voltage applied to the sensor, pulse-height spectra have been acquired for bias voltages spanning from the depletion voltage up to the breakdown voltage. Finally, the signal-to-noise ratio of the generated signals and the shape of their spectra allow us to probe the underlying physics of the multiplication process.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Self-Field-Induced Josephson Diode Effect

Josephson diodes are of interest for nonlinear superconducting circuit elements, which have many applications such as in solid-state qubit readout and coupling. Many different mechanisms can give rise to Josephson diode effects (JDEs). In this work, we investigate JDEs generated by the self-field of the supercurrent in the junction. To this end, we experimentally investigate JDEs in the supercurrent quantum interference patterns of planar hybrid Josephson junctions, composed of a cadmium arsenide thin film interfaced with a conventional superconductor. A model that includes the supercurrent self-field accurately describes the experimental observations. We show that self-field-induced JDEs are generally expected in planar junctions in perpendicular magnetic fields, even in cases of symmetric and uniform junctions, as long as they exhibit sufficiently large critical currents. Here, we discuss the tunability of self-field-induced JDEs via the supercurrent density and other parameters.

Josephson diode↗
DOE OSTI2026

Electrochemical Reactions Under Reverse Bias Create Additional Mobile Ions That Enable Hole Tunneling in Metal Halide Perovskite Diodes

Gradual reverse-bias breakdown in metal-halide perovskite diodes and solar cells is thought to originate from hole tunneling through steep bands in an ionic depletion region near the electron-transport layer after positively charged iodine vacancies accumulate near the hole-transport layer (HTL). However, typical reported mobile-ion concentrations near 1 x 10^17 cm-3 are too small to quantitatively explain significant tunneling-current densities and (Zener) breakdown observed near -5 V. Here, we show that inferred mobile-ion concentrations increase by more than 100x, to over 1 x 10^18cm-3 , within just 3 min of reverse bias at -6.0 V in p-i-n perovskite diodes. We attribute this increase to iodide oxidation and coupled iodine vacancy creation that must be balanced by reduction reactions near the HTL. Sub-optimal HTL coverage leads to direct contact between the transparent conducting electrode and perovskite, facilitates reduction events, enables the creation of even larger inferred mobile-ion concentrations (~1 x 10^19cm-3 ), and leads to faster degradation under reverse bias. This explains previous work that showed increased breakdown voltages and improved reverse-bias stability by implementing thick, uniform HTLs.

14 SOLAR ENERGY↗
DOE OSTI2024

Impact of metal diffusion, lattice distortions, native defects, and ambient on dielectric breakdown in Ni–Ga 2 O 3 Schottky diodes

Ga 2 O 3 unipolar devices are of high interest due to their ~8 MV/cm predicted breakdown fields, which have not yet been achieved due to premature device failure. Pre- and post-failure defect analysis of Ni–Ga 2 O 3 Schottky diodes in ultrahigh vacuum (UHV) and air were performed using depth-resolved cathodoluminescence, high angle annular dark field scanning transmission electron microscopy, and energy dispersive x-ray analysis to understand the physical mechanisms that precede premature breakdown. The breakdown voltage in UHV was dramatically reduced by nearly 40% compared with the breakdown in air. This reduction in the breakdown voltage correlated with post-breakdown differences in Ni distribution, indicating that the coordination and bonding of Ni contribute strongly to electrical behavior in Ni–Ga 2 O 3 Schottky diodes. Breakdown studies in UHV revealed that Ni diffuses away more from the metal–semiconductor interface than with air breakdown, where Ni localizes more near the interface, indicative of the preferential formation of a Ni oxide under O-poor conditions. These measurements also identified the formation of divacancy-interstitial complexes and their characteristic luminescence signature ~150 nm from the interface, the densities of which correlated with breakdown fields. These findings show that electric-field-induced degradation occurs via the rearrangement of native point defects, which act as an additional precursor to device failure. Macroscopically, they show the impact of both vacuum conditions and metal reactivity on Ga 2 O 3 device fabrication.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Thermally induced PtOx interfacial layer enhances stability of Pt/β-Ga2O3 vertical Schottky diodes

This study investigates the long-term stability of Pt/β-Ga2O3 field-plated Schottky barrier diodes at high temperatures, with extended thermal cycling and soaking stress. The device characteristics reveal a strong dependence on operating temperature, leading to an ON/OFF current ratio of ∼10× at ±3 V and 600 °C. Extensive thermal cycling (25 cycles over 100 h) between room temperature and 350 °C shows that leakage currents stabilize after the initial ten cycles. This stabilization is likely due to the formation of a thin PtOx layer at the Pt/β-Ga2O3 interface, as confirmed by high-resolution scanning transmission electron microscopy. Further exposure to a constant 350 °C environment for 10 h reveals a slight increase in the leakage current from 10−7 to 10−6 A at −5 V and degradation of the forward current, due to potential thermodynamic instability of the Ohmic contacts. This study provides insights into the changes in the Pt/β-Ga2O3 diode performance with thermal stress, offering a basis for predicting the device’s operational reliability at high temperatures for sensing and power applications.

08 HYDROGEN↗
DOE OSTI2025

InAs sidewall tunnel diodes enabled by surface states

Negative differential resistance (NDR), where the device current decreases with increasing bias voltage, is a representative phenomenon where quantum mechanics induces counterintuitive physical behavior and offers promising applications such as high-frequency oscillators, amplifiers, and multilevel logic circuits. While the NDR behavior has been extensively studied in various materials and devices, the role of surface properties in NDR, particularly in InAs-based diodes, remains underexplored. In this work, we report the observation of NDR in vertically structured InAs p + n diodes that exhibit a peak-valley current ratio of ∼6, which is suitably high for applications. Circumference-normalized current–voltage characterization revealed that the NDR originates from band-to-band tunneling between the valence band of p + -InAs and the conduction band of an n + -InAs surface, where the n + surface is due to surface states on otherwise n − -InAs. In addition, by comparing devices with various surface passivation methods (without intentional passivation, benzocyclobutene polymer, and silicon nitride), we found that the surface termination significantly affects the NDR characteristics. We present an equivalent circuit model to explain the observed device behavior. These findings offer insights into surface-enabled NDR phenomena and present new knobs for engineering NDR devices.

Circuit theorems↗
DOE OSTI2026

Indirect tunneling enabled spontaneous time-reversal symmetry breaking and Josephson diode effect in TiN/Al 2 ⁢O 3 /Hf 0.8 ⁢Zr 0.2 ⁢O 2 /Nb tunnel junctions

Josephson diode (JD) effect in Josephson tunnel junctions (JTJs) has attracted a great deal of attention due to its importance for developing superconducting-circuitry-based quantum technologies. Even though the preparation of high-quality JTJs by techniques employed in the semiconductor industry has been demonstrated, which was an important milestone because JTJs are the building blocks of superconducting electronics even before the quantum era, the JD effect has not been accomplished in them, nor has the highly desirable electrical control of the effect. We report here the fabrication of JTJs featuring a composite tunnel barrier of Al 2 ⁢O 3 and Hf 0.8 ⁢Zr 0.2 ⁢O 2 using complementary-metal-oxide-semiconductor compatible atomic layer deposition. These JTJs were found to show the JD effect in nominally zero magnetic fields with nonreciprocity controllable via an electric training current, yielding a surprisingly large diode efficiency. The quasiparticle tunneling, through which the Josephson coupling in a JTJ is established, was found to show theoretically expected gap features but no nonreciprocity. We attribute these observations to the simultaneous presence of positive and negative local Josephson couplings in the JTJs, with the negative Josephson coupling originating from indirect tunneling, which results in spontaneous time-reversal symmetry breaking. Finally, the double-minima washboard potential for the ensemble-averaged phase difference in the resistively and capacitively shunted junction model is shown to fully account for the experimentally observed JD effect.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Slope Efficiency and Voltage Reduction at High Current Densities in AlInGaAs Diode Lasers

Here, the slope efficiency and drive voltage of broad area AlInGaAs laser diodes near 865 nm is observed to decrease significantly under quasi-CW pulsed operation at currents well above threshold, in a manner that cannot be explained by thermal effects or carrier leakage over heterojunction barriers. Simulations show that the slope efficiency reduction is explicable by increased free carrier absorption in the waveguide region. Empirical formulas are presented to represent these effects in a closed analytic form suitable for use in simulators for diode-pumped laser systems.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Superconducting diode effect in two-dimensional topological insulator edges and Josephson junctions

The superconducting diode effect—the dependence of critical current on its direction—can arise from the simultaneous breaking of inversion and time-reversal symmetry in a superconductor and has gained interest for its potential applications in superconducting electronics. In this Letter, we study the effect in a two-dimensional topological insulator (2D TI) in both a uniform geometry as well as in a long Josephson junction. We show that in the presence of Zeeman fields, a circulating edge current enables a large non-reciprocity of the critical current. We find a maximum diode efficiency of 1 for the uniform 2D TI and (2−1)2≈0.17 for the long Josephson junction.

Physics↗
DOE OSTI2025

Robust and symmetric magnetic field dependency of superconducting diode effect in asymmetric Dirac semimetal SQUIDs

The recent demonstration of the superconducting diode effect (SDE) has generated renewed interest in superconducting electronics, in which devices such as compact superconducting diodes that can perform signal rectification with low-energy operations are needed. In this article, we present our results of robust and symmetric-in-magnetic-field SDE in asymmetric superconducting quantum interference devices (SQUIDs) realized in high-quality Dirac semimetal Cd 3 As 2 thin film grown by the molecular beam epitaxy technique. Consistent with previous work, a zero magnetic field SDE is observed. Furthermore, the difference in switching current is independent of the strength and polarity of an out-plane magnetic field in the range of −10 and 10 mT. We speculate that this robust symmetric-in-field SDE in our Dirac semimetal SQUIDs is due to the formation of helical spin texture, theoretically predicted in Dirac semimetals.

Current-voltage characteristic↗
DOE OSTI2025

Realizing a topological diode effect on the surface of a topological Kondo insulator

Introducing the concept of topology into material science has sparked a revolution from classic electronic and optoelectronic devices to topological quantum devices. The latter has potential for transferring energy and information with unprecedented efficiency. Here, we demonstrate a topological diode effect on the surface of a three-dimensional material, SmB 6 , a candidate topological Kondo insulator. The diode effect is evidenced by pronounced rectification and photogalvanic effects under electromagnetic modulation and radiation at radio frequency. Our experimental results and modeling suggest that these prominent effects are intimately tied to the spatially inhomogeneous formation of topological surface states (TSS) at the intermediate temperature. This work provides a manner of breaking the mirror symmetry (in addition to the inversion symmetry), resulting in the formation of pn-junctions between puddles of metallic TSS. Further, this effect paves the way for efficient current rectifiers or energy-harvesting devices working down to radio frequency range at low temperature, which could be extended to high temperatures using other topological insulators with large bulk gap.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Electrophysical Properties of Cd 0.96 Mn 0.04 Te 0.96 Se 0.04 Surface-Barrier Diodes

Diode structures, obtained by vacuum deposition of Al onto the surface of a p-Cd 0.96 Mn 0.04 Te 0.96 Se 0.04 single crystals, have been manufactured and studied. Applying the Sah-Noyce–Shockley carrier generation-recombination model, a quantitative description of the electrical characteristics of diodes has been achieved. Here, the resistivity of p-Cd 0.96 Mn 0.04 Te 0.96 Se 0.04 crystals was equal to ρ ≈ 400 Ω⋅cm and was determined from the I–V characteristics of the structure with two ohmic contacts, which were obtained by chemical deposition of gold. The activation energy of the dark temperature dependence of resistivity ρ=ρ(T) was equal to ΔE≈0.24 eV. The forbidden gap of p-Cd 0.96 Mn 0.04 Te 0.96 Se 0.04 crystals, found from the optical absorption spectra, was equal to E g =1.495 eV.

42 ENGINEERING↗
DOE OSTI2025

Diode laser pumps for future inertial fusion energy systems: status and perspectives

Diode laser pumps are a critical enabling technology for inertial fusion energy (IFE), and will remain the largest contributor to facility cost, even assuming tenfold cost-reduction at high volumes. An overview of diode requirements for IFE and a technology path to achieve them are presented.

Engineering - Electronic and electrical engineerin↗
DOE OSTI2025

Stacked-mosaic amplifier and diode delivery concept for kJ-class inertial fusion energy laser driver

We report on a laser amplifier architecture designed as a modular element for scaling to multi-megajoule laser facilities intended for inertial fusion energy (IFE) power plants. This kilojoule-class module features a stacked mosaic of gain media integrated with a diode delivery system for efficient optical pumping of the mosaic-structured gain medium, enabling high-repetition-rate operation at high wall plug efficiencies, necessary for an IFE driver. Details of a diode delivery system capable of pumping the mosaic architecture are presented. Comprehensive numerical modeling demonstrates that the stacked-mosaic approach reduces transverse gain by five orders of magnitude compared to a conventional full-aperture Yb:YAG based amplifier, substantially suppressing transverse amplified spontaneous emission (TASE) and enabling enhanced longitudinal energy extraction. Detailed analysis of thermal management and wavefront distortion in a 4 × 4 mosaic array indicates that temperature gradients and thermally induced aberrations are effectively controlled using gas cooling and commercially available phase-plate and deformable mirror technologies. We further discuss the applicability of a stacked-mosaic architecture to direct-drive IFE schemes, where broad spectral bandwidth is critical, and its compatibility with frequency conversion modules for up-conversion to blue wavelengths. Finally, an example point design for a 10 kJ, 10 Hz Yb:YAG module operating at 175 K with wall-plug efficiency exceeding 10 % is presented, underscoring the feasibility of this approach for next-generation high-energy lasers for IFE drivers. The results establish the stacked-mosaic amplifier as a scalable, robust platform not only for IFE but also for a broad range of advanced scientific and industrial laser applications.

Lasers↗
DOE OSTI2025

An Optimized H5 Hysteresis Current Control with Clamped Diodes in Transformer-Less Grid-PV Inverter

With the rise of renewable energy penetration in the grid, photovoltaic (PV) panels are connected to the grid via inverters to supply solar energy. Transformer-less grid-tied PV inverters are gaining popularity because of their improved efficiency, reduced size, and lower costs. However, they can induce a path for leakage currents between the PV and the grid due to the absence of galvanic isolation. This leads to serious electromagnetic interference, loss in efficiency, and safety concerns. The leakage current is primarily influenced by the nature of the common mode voltage (CMV), which is determined by the switching techniques of the inverter. In this paper, a novel inverter topology of Hysteresis Controlled H5 with Two Clamping Diodes (HCH5-D2) is derived. The HCH5-D2 topology helps decouple the AC part (Grid) and DC part (PV) during the freewheeling period to make the CMV constant, thereby reducing the leakage current. Additionally, the extra diodes help reduce voltage spikes generated during the freewheeling period and maintain the CMV at a constant value. Finally, a 2.2 kW grid-connected single-phase HCH5-D2 PV inverter system’s MATLAB simulation is presented, showing better results compared to a traditional H4 inverter.

42 ENGINEERING↗
DOE OSTI2025

Solution‐Processed Spin‐Polarized Light‐Emitting Diodes of Colloidal Quantum Wells and Magnetic Nanoparticles

Electrical injection of spin-polarized carriers into semiconductors enables circularly-polarized emission from spin-polarized light-emitting diodes (spin-LEDs). The incredible level of tunability of magnetic and electronic properties in colloidal nanocrystals offers unprecedented opportunities for the modulation of polarization of light in solution-processed spin-LEDs based on magnetic nanoparticles unlike epitaxially grown spin-LEDs restricted by a very limited range of materials for their exploitation, and solution-processed spin-LEDs based on chiral molecules, which do not allow the modulation of polarization in general. Here, it is shown that electrical injection of spin-polarized electrons from magnetic Fe 3 O 4 nanoparticles into CdSe/CdZnS core/shell colloidal quantum wells (CQWs) in solution-processed LEDs that allows for polarization modulation of electroluminescence. In this structure, a monolayer of face-down oriented CQWs is deposited as an active layer to avoid polarization losses due to the hopping of the electrons between the CQWs before the radiative recombination process. In this solution-processed spin-LED, the circular polarization reaches 4.5% at 3 K and survives up to 100 K. A net circular polarization is observed at zero magnetic field up to 100 K because of the remnant magnetization of the Fe 3 O 4 nanoparticles. This new colloidal spin-LED architecture presents significant prospects for future solution-processed advanced opto-spintronic devices.

circularly polarized electroluminescence↗
DOE OSTI2025

How non-ohmic contact-layer diodes in perovskite pinholes affect abrupt low-voltage reverse-bias breakdown and destruction of solar cells

Perovskite solar cells (PSCs) rapidly degrade under reverse bias, a condition that may occur during partial shading. Here, in this study, we use electrical measurements, electron microscopy, and optical and thermal imaging to investigate abrupt breakdown and hotspotting under low reverse potentials (<|-2| V). We show that microscopic pinholes in the perovskite layer cause rapid, destructive breakdown under reverse bias despite minimally reducing power conversion efficiencies. Measurements on miniature (200-micrometer diameter) PSCs and perovskite-free transport-layer diodes indicate that abrupt, low-voltage breakdown occurs in nanoscale to micrometer-scale defects and that metal migration and filamentation are unlikely causes. Reverse-bias stability substantially improves when pinholes in the perovskite and transport layers are eliminated. Atomic layer deposition of tin oxide prevents abrupt breakdown by ensuring physical separation between electrodes-not by blocking metal ion migration. Perovskite researchers should adopt cleaner, more uniform deposition techniques to enable robust PSCs for further research and commercial applications.

14 SOLAR ENERGY↗