An equation of state at subnuclear densities
Equation of state for neutron, proton and electron gas mixture associated with cold matter above white dwarf densities and below nuclear density
Cameron, A. G. W.↗
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Diamondlike carbon films on semiconductors for insulated-gate technology
MIS structures are fabricated on p-type InP, GaAs, and Si substrated by direct ionization of 25-percent CH4 in Ar and ion-beam deposition of 70-nm-thick diamondlike films, followed by application of Al gate electrodes and ohmic contacts. The films are found to have bandgap 0.9-1.1 eV, resistivity 8.1 Mohm cm, breakdown field strength 1 MV/cm, and density 1.8 g/cu cm, to be thermally stable up to 400 C, and to undergo rapid decomposition above 450 C. The electrical properties of the MIS structures are significantly improved by sputter cleaning the substrates with a 1-keV 2-mA/sq cm Ar beam for 2 min at 300 microtorr prior to C-film deposition. The resulting structures have fixed insulator charge number densities 4 x 10 to the 12th/sq cm (InP), 7.5 x 10 to the 12th/sq cm (GaAs), and 9 x 10 to the 11th/sq cm (Si) and interface state densities (5, 200, and 0.5) x 10 to the 12th/ sq cm eV, respectively. It is suggested that the low optical bandgap and resistivity of the C films and the high insulator-charge and interface-state densities make them unstable as gate dielectrics for microelectronics.
Kapoor, V. J.↗
Effects of radiation on charge-coupled devices
The effects of 1 MeV electron irradiation upon the performance of two phase, polysilicon aluminum gate CCDs are reported. Both n- and p-surface channel and n-buried channel devices are investigated using 64- and 128-stage line arrays. Characteristics measured as a function of radiation dose include: Transfer inefficiency, threshold voltage, field effect mobility, interface state density, full well signal level and dark current. Surface channel devices are found to degrade considerably at less than 10 to the 5th power rads (Si) due to the large increase in fast interface state density caused by radiation. Buried channel devices maintain efficient operation to the highest dose levels used.
Carnes, J. E.↗
Surface States and Effective Surface Area on Photoluminescent P-Type Porous Silicon
The present study is motivated by the possibility of utilizing porous silicon for spectral sensors. Pulse measurements on the porous-Si/electrolyte system are employed to determine the surface effective area and the surface-state density at various stages of the anodization process used to produce the porous material. Such measurements were combined with studies of the photoluminescence spectra. These spectra were found to shift progressively to the blue as a function of anodization time. The luminescence intensity increases initially with anodization time, reaches a maximum and then decreases with further anodization. The surface state density, on the other hand, increases with anodization time from an initial value of about 2 x 10(exp 12)/sq cm surface to about 1013 sq cm for the anodized surface. This value is attained already after -2 min anodization and upon further anodization remains fairly constant. In parallel, the effective surface area increases by a factor of 10-30. This behavior is markedly different from the one observed previously for n-type porous Si.
Weisz, S. Z.↗
The application of the time-dependent Hartree-Fock method to the calculation of excited state-excited state transition densities of atoms /molecules/
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Csanak, G.↗
Equation of state of matter at supernuclear density
Equation of state of matter at supernuclear density
STATE EQUATION↗
Electrical characterization of plasma-grown oxides on gallium arsenide
Plasma-grown GaAs oxides and their interfaces have been characterized by measuring the electrical properties of metal-oxide-semiconductor capacitors and of Schottky junctions. The current transport mechanism in the oxide at high electrical field was found to be Frankel-Poole emission, with an electron trap center at 0.47 eV below the conduction band of the oxide. The interface-state density, evaluated from capacitance and conductance measurements, exhibits a U-shaped interface-state continuum extending over the entire band gap. Two discrete deep states with high concentration are superimposed on this continuum at 0.40 and 0.70 eV below the conduction band. The results obtained from measurements on Schottky junctions have excluded the possibility that these two deep states originate from plasma damage. Possible origins of these states are discussed in this paper.
Hshieh, F. I.↗
Optical Line Radiation from Uranium Plasmas
The radiative energy current due to line radiation is calculated in a U 235 plasma over a temperature range of 5000 K to 8000 K. Also a variation in the neutron flux of 2 x 10 to the 12th power neutrons/ (sq cm-sec) to 2 x 10 to the 16th power neutrons/(sq cm-sec) is considered. The plasma forms a cylinder with a diameter and height of one meter. To calculate the radiative-energy current, a rate equation formalism is developed to solve for the atomic state densities along with a model for the energy levels in neutral and singly ionized uranium. Because the electron states in uranium lie below 5eV, recombination is the principle excitation mechanism. At and above 6000 K, inversions were found, and at all temperatures the line radiation at line center was greater than the corresponding black-body radiation. There are negligible differences in the radiative-energy current at 6000 K for variations in the neutron flux. The average opacity, which varied from 100 to 100,000 gm/sq cm, over the frequency range of line radiation is calculated.
Maceda, E. L.↗
MOSFET and MOS capacitor responses to ionizing radiation
The ionizing radiation responses of metal oxide semiconductor (MOS) field-effect transistors (FETs) and MOS capacitors are compared. It is shown that the radiation-induced threshold voltage shift correlates closely with the shift in the MOS capacitor inversion voltage. The radiation-induced interface-state density of the MOSFETs and MOS capacitors was determined by several techniques. It is shown that the presence of 'slow' states can interfere with the interface-state measurements.
Benedetto, J. M.↗
Critical fluid thermal equilibration experiment (19-IML-1)
Gravity sometimes blocks all experimental techniques of making a desired measurement. Any pure fluid possesses a liquid-vapor critical point. It is defined by a temperature, pressure, and density state in thermodynamics. The critical issue that this experiment attempts to understand is the time it takes for a sample to reach temperature and density equilibrium as the critical point is approached; is it infinity due to mass and thermal diffusion, or do pressure waves speed up energy transport while mass is still under diffusion control. The objectives are to observe: (1) large phase domain homogenization without and with stirring; (2) time evolution of heat and mass after temperature step is applied to a one phase equilibrium sample; (3) phase evolution and configuration upon going two phase from a one phase equilibrium state; (4) effects of stirring on a low g two phase configuration; (5) two phase to one phase healing dynamics starting from a two phase low g configuration; and (6) effects of shuttle acceleration events on spatially and temporally varying compressible critical fluid dynamics.
Wilkinson, R. Allen↗
Anorthite - Thermal equation of state to high pressures
New shock-wave data are presented for anorthite from which a full high-temperature, high-pressure equation of state is derived. Whereas anorthite has relatively low values of thermal expansion and Grueneisen parameter at zero pressure, it is found that these attain relatively high values in the high density state corresponding to the high-pressure phase Hugoniot but decrease upon compression as expected. It is noted that higher order anharmonic contributions decrease more rapidly with pressure and that the thermal expansion therefore saturates to a high temperature value at pressures above about 100 GPa. Reduction of the Hugoniot data permits shock temperatures to be calculated; it also yields a principal adiabat for the high pressure branch of the Hugoniot. The initial bulk modulus of this adiabat is essentially identical to that of anorthite, whereas the initial density is about 3.40 Mg/cu m.
Jeanloz, R.↗
Plasma Deposited SiO2 for Planar Self-Aligned Gate Metal-Insulator-Semiconductor Field Effect Transistors on Semi-Insulating InP
Metal-insulator-semiconductor (MIS) field effect transistors were fabricated on InP substrates using a planar self-aligned gate process. A 700-1000 A gate insulator of Si02 doped with phosphorus was deposited by a direct plasma enhanced chemical vapor deposition at 400 mTorr, 275 C, 5 W, and power density of 8.5 MW/sq cm. High frequency capacitance-voltage measurements were taken on MIS capacitors which have been subjected to a 700 C anneal and an interface state density of lxl0(exp 11)/eV/cq cm was found. Current-voltage measurements of the capacitors show a breakdown voltage of 107 V/cm and a insulator resistivity of 10(exp 14) omega cm. Transistors were fabricated on semi-insulating InP using a standard planar self-aligned gate process in which the gate insulator was subjected to an ion implantation activation anneal of 700 C. MIS field effect transistors gave a maximum extrinsic transconductance of 23 mS/mm for a gate length of 3 microns. The drain current drift saturated at 87.5% of the initial current, while reaching to within 1% of the saturated value after only 1x10(exp 3). This is the first reported viable planar InP self-aligned gate transistor process reported to date.
Tabory, Charles N.↗
Equation of state at ultrahigh densities. I
Particular attention is given to the physics involved in the derivation of an equation of state for a density range from 10 g/ccm to 200,000 billion g/ccm and for the density region from 200,000 billion g/ccm to 2,000,000 billion g/ccm. Conditions in a high density regime with densities exceeding 500,000 billion g/ccm are examined. Equations of state for a gas of pure neutrons and for a gas of nucleons, electrons, and hyperons are considered.
Canuto, V.↗
Contributions of Solar Wind and Micrometeoroids to Molecular Hydrogen in the Lunar Exosphere
We investigate the density and spatial distribution of the H2 exosphere of the Moon assuming various source mechanisms. Owing to its low mass, escape is non-negligible for H2. For high-energy source mechanisms, a high percentage of the released molecules escape lunar gravity. Thus, the H2 spatial distribution for high-energy release processes reflects the spatial distribution of the source. For low energy release mechanisms, the escape rate decreases and the H2 redistributes itself predominantly to reflect a thermally accommodated exosphere. However, a small dependence on the spatial distribution of the source is superimposed on the thermally accommodated distribution in model simulations, where density is locally enhanced near regions of higher source rate. For an exosphere accommodated to the local surface temperature, a source rate of 2.2 g s-1 is required to produce a steady state density at high latitude of 1200 cm-3. Greater source rates are required to produce the same density for more energetic release mechanisms. Physical sputtering by solar wind and direct delivery of H2 through micrometeoroid bombardment can be ruled out as mechanisms for producing and liberating H2 into the lunar exosphere. Chemical sputtering by the solar wind is the most plausible as a source mechanism and would require 10-50 of the solar wind H+ inventory to be converted to H2 to account for the observations.
Impact↗
The effect of oxidation-expanded defects upon MOS parameters
Implantation of Ne ions was chosen as a means of introducing a uniformly distributed quantitatively controllable and reproducible amount of microdefects at the silicon surface. Each wafer was ion-implanted on one half of its surface, the other half remaining as a control. Seven implant fluences from 1 trillion to 5 by 10 to the 14th power Ne ions/sq cm were used. The fluences, as well as the concentrations of defects expanded by the subsequent gate oxidation, were correlated with seven different MOS parameters. For implant fluences of 10 to the 14th power per sq cm and above, increasing stacking-fault densities were found. The oxide defect density associated with time-dependent breakdown increased significantly with Ne dose. The presence of oxidation-expanded defects drastically increases the surface-generation velocity and decreases the bulk lifetime. Slight increases in flatband voltage and surface-state density occurred only for the wafers having the greatest defect concentrations. Oxidation of a P-containing damaged silicon surface results in a greater pileup of P at the surface than occurs for the oxidation of a similar but undamaged surface. It appears that the expanding defects restrain the diffusion of P inward from the surface.
Prussin, S.↗
Interface properties of various passivations of HgCdTe
The effects of different surface treatments of the p-type Hg(x-1)Cd(x)Te (x about 0.2) alloy, including anodic-sulfide, anodic-oxide, and ZnS coatings, on the surface charge density and surface mobility were investigated. Measurements of surface recombination velocities in samples passivated by either a ZnS coating on a freshly etched surface or by anodic native sulfide combined with deposited ZnS showed essentially the same temperature dependence down to 50 K. For the same original material, both the surface state density and the activation energy were found to be similar. It is suggested that, for both passivations, the surface is controlled by traps that can be related to lattice defects, such as vacancies.
Schacham, S. E.↗
Basic processes occurring in gaseous plasmas in various charge density and energy states Final report
Sensitive laser diagnostic procedures and properties of gaseous plasmas at various charge densities and energy states
Goldstein, L.↗
Frequency-dependent characteristics and trap studies of lattice-matched (x = 0.53) and strained (x greater than 0.53) In(0.52)Al(0.48)As/In(x)Ga(1-x)As HEMT's
The low-frequency characteristics of InAlAs/In(x)Ga(1-x)As high-electron-mobility transistors (HEMTs) are studied, and trap densities are evaluated. The HEMTs' transconductance g(m) and output resistance R(ds) dispersion are smallest for 60 percent indium (In) content and largest for 53 percent In. The maximum dispersion for the 53 percent In sample is about 6 percent for g(m) and about 13.3 percent for R(ds), corresponding to lower values than observed in MESFETs. The R(ds) dispersion characteristics are weaker than in AlGaAs/GaAs HEMTs and manifest themselves primarily up to 100 kHz. An analysis of the dispersion results indicates that, unlike in the case of MESFETs, the channel region under the gate rather than the access regions is responsible for the dispersion. Interface state densities were extracted by the AC conductance method and were found to follow the same trend as the g(m) and R(ds) dispersion.
Ng, Geok-Ing↗