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Y(III) Sorption at the Orthoclase (001) Surface Measured by X-ray Reflectivity

Interactions of heavy metals with charged mineral surfaces control their mobility in the environment. Here, we investigate the adsorption of Y(III) onto the orthoclase (001) basal plane, the former as a representative of rare earth elements and an analogue of trivalent actinides and the latter as a representative of naturally abundant K-feldspar minerals. In this study, we apply in situ high-resolution X-ray reflectivity to determine the sorption capacity and molecular distribution of adsorbed Y species as a function of the Y 3+ concentration, [Y 3+ ], at pH 7 and 5. With [Y 3+ ] ≥ 1 mM at pH 7, we observe an inner-sphere (IS) sorption complex at a distance of ~1.5 Å from the surface and an outer-sphere (OS) complex at 3–4 Å. Based on the adsorption height of the IS complex, a bidentate, binuclear binding mode, in which Y 3+ binds to two terminal oxygens, is proposed. In contrast, mostly OS sorption is observed at pH 5. The observed maximum Y coverage is ~1.3 Y 3+ /A UC (A UC : area of the unit cell = 111.4 Å 2 ) for all the investigated pH values and Y concentrations, which is in the expected range based on the estimated surface charge of orthoclase (001).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Probing electronic dead layers in homoepitaxial n-SrTiO 3 (001) films

We combine state-of-the-art oxide epitaxial growth by hybrid molecular beam epitaxy with transport, x-ray photoemission, and surface diffraction, along with classical and first-principles quantum mechanical modeling to investigate the nuances of insulating layer formation in otherwise high-mobility homoepitaxial n-SrTiO 3 (001) films. Our analysis points to charge immobilization at the buried n-SrTiO 3 /undoped SrTiO 3 (001) interface as well as within the surface contamination layer resulting from air exposure as the drivers of electronic dead-layer formation. As Fermi level equilibration occurs at the surface and the buried interface, charge trapping reduces the sheet carrier density (n 2D ) and renders the n-STO film insulating if n 2D falls below the critical value for the metal-to-insulator transition.

36 MATERIALS SCIENCE↗