Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Crystal Characterization”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2002

A Deuterium NMR Study of Bent-Core Liquid Crystals: Synthesis and Characterization of Deuterium-Labeled Oxadiazole-Containing Liquid Crystals - 1

We have synthesized two deuterated boomerang-shaped liquid crystals based on 2,5-bis(4-hydroxyphenyl)-1,3,4-oxadiazole (ODBP). Deuterium was introduced in the rigid 2,5-diphenyl-1,3,4-oxadiazole core and in the aromatic ring of the terminal 4-dodecyloxyphenyl moiety using standard acid catalyzed deuterium exchange conditions. Both compounds, ([4,4'(1,3,4-oxadiazole-2,5-diyl-d4)] di-4-dodecyloxybenzoate: ODBP-d4-Ph-O-C12) and ([4,4'(1,3,4-oxadiazole-2,5-diyl)] di-4-dodecyloxy-benzoate-d4; ODBP-Ph-d4-O-C12) were investigated by nuclear magnetic resonance, optical microscopy and differential scanning calorimetry. The optical textures and thermal behavior of both compounds were found to be identical to the non-deuterated analog [4,4(1,3,4-oxadiazole-2,5-diyl)] di-4-dodecyloxybenzoate (ODBP-Ph-O-C12) which we reported earlier. These compounds exhibit behavior indicative of a biaxial nematic liquid crystal phase, which we hope to confirm using deuterium NMR spectroscopy in the next phase of this study.

Dingemans, Theo J.↗
NASA NTRS2004

X-ray Microscopic Characterization of Protein Crystals

The microscopic mapping of the variation in degree of perfection and in type of defects in entire protein crystals by x-rays may well be a prerequisite for better understanding causes of lattice imperfections, the growth history, and properties of protein crystals. However, x-ray microscopic characterization of bulk protein crystals, in the as-grown state, is frequently more challenging than that of small molecular crystals due to the experimental difficulties arising largely from the unique features possessed by protein crystals. In this presentation, we will illustrate ssme recent activities in employing coherence-based phase contrast x-ray imaging and high-angular-resolution diffraction techniques for mapping microdefects and the degree of perfection of protein crystals, and demonstrate a correlation between crystal perfection, diffraction phenomena., and crystallization conditions. The observed features and phenomena will be discussed in context to gain insight into the nature of defects, nucleation and growth, and the properties of protein crystals.

Hu, Z. W.↗
NASA NTRS2007

Crystal Growth and Characterization of CdTe Grown by Vertical Gradient Freeze

In this study, crystals of CdTe were grown from melts by the unseeded vertical gradient freeze method. The quality of grown crystal were studied by various characterization techniques including Synchrotron White Beam X-ray Topography (SWBXT), chemical analysis by glow discharge mass spectroscopy (GDMS), low temperature photoluminescence (PL), and Hall measurements. The SWBXT images from various angles show nearly strain-free grains, grains with inhomogeneous strains, as well as twinning nucleated in the shoulder region of the boule. The GDMS chemical analysis shows the contamination of Ga at a level of 3900 ppb, atomic. The low temperature PL measurement exhibits the characteristic emissions of a Ga-doped sample. The Hall measurements show a resistivity of 1 x l0(exp 7) ohm-cm at room temperature to 3 x 10(exp 9) ohm-cm at 78K with the respective hole and electron concentration of 1.7 x 10(exp 9) cm(exp -3) and 3.9 x 10(exp 7) cm(exp -3) at room temperature.

Su, Ching-Hua↗
NASA NTRS1973

Methods of measurement for semiconductor materials, process control, and devices

This progress report describes NBS activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. Significant accomplishments during this reporting period include design of a plan to provide standard silicon wafers for four-probe resistivity measurements for the industry, publication of a summary report on the photoconductive decay method for measuring carrier lifetime, publication of a comprehensive review of the field of wire bond fabrication and testing, and successful completion of organizational activity leading to the establishment of a new group on quality and hardness assurance in ASTM Committee F-1 on Electronics. Work is continuing on measurement of resistivity of semiconductor crystals; characterization of generation-recombination-trapping centers in silicon; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; and measurement of thermal properties of semiconductor devices, delay time and related carrier transport properties in junction devices, and noise properties of microwave diodes.

Bullis, W. M.↗
NASA NTRS1973

Methods of Measurement for Semiconductor Materials, Process Control, and Devices

The development of methods of measurement for semiconductor materials, process control, and devices is reported. Significant accomplishments include: (1) Completion of an initial identification of the more important problems in process control for integrated circuit fabrication and assembly; (2) preparations for making silicon bulk resistivity wafer standards available to the industry; and (3) establishment of the relationship between carrier mobility and impurity density in silicon. Work is continuing on measurement of resistivity of semiconductor crystals; characterization of generation-recombination-trapping centers, including gold, in silicon; evaluation of wire bonds and die attachment; study of scanning electron microscopy for wafer inspection and test; measurement of thermal properties of semiconductor devices; determination of S-parameters and delay time in junction devices; and characterization of noise and conversion loss of microwave detector diodes.

Bullis, W. M.↗
NASA NTRS1987

Relating polarization phase difference of SAR signals to scene properties

This paper examines the statistical behavior of the phase difference Delta-phi between the HH-polarized and VV-polarized backscattered signals recorded by an L-band SAR over an agricultural test site in Illinois. Polarization-phase difference distributions were generated for about 200 agricultural fields for which ground information had been acquired in conjunction with the SAR mission. For the overwhelming majority of cases, the Delta-phi distribution is symmetric and has a single major lobe centered at the mean value of the distribution Delta-phi. Whereas the mean Delta-phi was found to be close to zero degrees for bare soil, cut vegetation, alfalfa, soybeans, and clover, a different pattern was observed for the corn fields; the mean Delta-phi increased with increasing incidence angle Theta = 35 deg. The explanation proposed for this variation is that the corn canopy, most of whose mass is contained in its vertical stalks, acts like a uniaxial crystal characterized by different velocities of propagation for waves with horizontal and vertical polarization. Thus, it is hypothesized that the observed backscatter is contributed by a combination of propagation delay, forward scatter by the soil surface, and specular bistatic reflection by the stalks. Model calculations based on this assumption were found to be in general agreement with the phase observations.

Ulaby, Fawwaz T.↗
NASA NTRS1989

Crystal growth of device quality GaAs in space

The program on Crystal Growth of Device Quality GaAs in Space was initiated in 1977. The initial stage covering 1977 to 1984 was devoted strictly to ground-based research. By 1985 the program had evolved into its next logical stage aimed at space growth experiments; however, since the Challenger disaster, the program has been maintained as a ground-based program awaiting activation of experimentation in space. The overall prgram has produced some 80 original scientific publications on GaAs crystal growth, crystal characterization, and new approaches to space processing. Publication completed in the last three years are listed. Their key results are outlined and discussed in the twelve publications included as part of the report.

Gatos, Harry C.↗
NASA NTRS1995

Thruster momentum transfer studies and magnetoplasmadynamic (MPD) thruster use in materials/surface modification

This research project involves the systematic study of the MPD thruster for dual uses. Though it was designed as a thruster for space vehicles, the characteristics of the plasma make it an excellent candidate for industrial applications. This project will seek to characterize the system for use in materials processing and characterization. Crystals grown at Fisk University for use with solid state detectors will be studied. Surface modification on ZnCdTe, CdTe, and ZnTe will be studied using AFM, XPS and SAES. In addition to the surface modification studies, design work on a momentum transfer measurement device has been completed. The design and limitations of the device will be presented.

Thompson, E.↗
NASA NTRS1994

Ground-based research of crystal growth of II-VI compound semiconductors by physical vapor transport

Ground-based investigation of the crystal growth of II-VI semiconductor compounds, including CdTe, CdS, ZnTe, and ZnSe, by physical vapor transport in closed ampoules was performed. The crystal growth experimental process and supporting activities--preparation and heat treatment of starting materials, vapor partial pressure measurements, and transport rate measurements are reported. The results of crystal characterization, including microscopy, microstructure, optical transmission photoluminescence, synchrotron radiation topography, and chemical analysis by spark source mass spectrography, are also discussed.

Volz, M. P.↗
NASA NTRSDate not supplied

Vapor Growth of ZnSe-based Compound Semiconductors in Low Gravity environment on International Space Station

Six low-gravity experiments of crystal growth of ZnSe-based compound semiconductors by physical vapor transport (PVT) are scheduled to be processed inside Low Gradient Furnace (LGF) on Materials Science Research Rack (MSRR) in Material Science Laboratory (MSL) on International Space Station (ISS) starting from February 27th, 2023. The flight samples consist of three unseeded growths of ZnSe, Cr-doped ZnSe and ZnSeTe as well as growth of ZnSe on top of three single crystal ZnSe seeds with orientation of (100), (110) and (111). The main scientific objective of the flight experiments is to establish the effects of gravity-driven fluid flows on Earth to (i) the non-uniform incorporation of impurities and defects and (ii) the deviation from stoichiometry observed in the grown crystals caused by growth interface fluctuations and evolution as the results of buoyancy-driven convection and irregular fluid-flows. The investigation will also evaluate the effects of gravity on the PVT process by examining (i) the growth kinetics on various seed orientations, (ii) the dopant segregation and distribution in the Cr doped ZnSe, and (iii) the compositional segregation and distribution in the ternary ZnSeTe crystal grown by PVT. Additionally, from X-ray diffraction/topography and by measuring the density and distribution of various crystalline defects it will assess the self-induced strain effects developed during processing at elevated temperatures caused by the weight of the crystals. During the ground-based preparations, the following tasks have been accomplished: • Establish the thermodynamic properties of the ZnSe binary and related ternary systems by measuring the partial pressures of the vapor phase coexisting with the condensed phases and perform phase diagram calculations for comparison. • Evaluate the effects of gravity-driven convection in the growth process by performing experiments under various vapor transport orientations relative to gravity vector, i.e., horizontal, vertically stabilized and destabilized configurations. • Establish a quantitative correlation between growth parameters and the characteristics and properties of the grown crystals by characterizing the crystals using a variety of techniques. • Evaluate the fundamentals of the current theories on vapor transport and crystal growth kinetics by performing in-situ and real-time monitoring techniques during growth. • Develop a one-dimensional diffusion limited theory of mass transport and two- and three-dimensional numerical simulations of both mass transport and heat transfer and thus establish the microgravity requirements for the flight experiments and to predict the characteristics of the grown crystals such as the solid-vapor interface shapes… etc. and establish a fundamental understanding of the crystal growth process from the comparison with experimental results.

ZnSe↗
NASA NTRS1989

Growth and characterization of single crystal insulators on silicon

An overview of the growth and characterization of epitaxial insulators on semiconductors is presented. The potential applications include semiconductor-on-insulator structures, three-dimensional and/or high-density integrated circuits, optoelectronic applications such as integrated waveguides and improved gate insulators. The growth and physical characterization of epitaxial fluorides on semiconductors are discussed. Consideration is also given to the epitaxial overgrowth of epitaxial metal layers with CaF2 as well as to the formation of a novel superlattice of Ca particles in epitaxial CaF2.

Schowalter, Leo J.↗
NASA NTRS1984

Overview of Characterization Techniques for High Speed Crystal Growth

Features of characterization requirements for crystals, devices and completed products are discussed. Key parameters of interest in semiconductor processing are presented. Characterization as it applies to process control, diagnostics and research needs is discussed with appropriate examples.

Ravi, K. V.↗
NASA NTRS1998

Characterization of Semi-Insulating CdTe Crystals Grown by Horizontal Seeded Physical Vapor Transport

CdTe crystals were grown by horizontal seeded physical vapor transport technique in uncoated and boron nitride coated fused silica ampoules with the source materials near the congruent sublimation condition. The grown crystals were characterized by current-voltage measurements, low temperature photoluminescence spectroscopy, near IR transmission optical microscopy, spark source mass spectroscopy and chemical etching. The measured resistivities of the crystals were in the high-10(exp 8) ohm-cm range. Although the crystal grown in the boron nitride coating was contaminated with boron from the photoluminescence measurements, the coating yielded a single crystal with no inclusions or precipitates.

Chattopadhyay, K.↗
NASA NTRS1997

Crystal Growth and Characterization of Bil3

Bismuth tri-iodide (BiI3) have been grown by physical vapor transport (PVT), and by the Bridgman (melt) method. These crystals along with pure and stoichiometric BiI3 powder have been investigated by differential scanning calorimetry (DSC). The DSC results show that pure BiI3 powder has no phase transition and melts around 408 C. While we found no evidence for the high temperature dissociation of BiI3, the DSC measurements show that crystals grown from melt method contain a significantly large amount of Bi-rich phases than crystals grown from PVT method, as indicated by phase transition detected at 270, 285, 298 and 336 C.

Hayes, Julia↗
NASA NTRS2000

BEAM-ish: A Graphical User Interface for the Physical Characterization of Macromolecular Crystals

Crystal mosaicity is determined from the measurement of the reflection angular width and can be used as an indicator of crystal perfection. A new method has been developed that combines the use of unfocused synchrotron radiation, super-fine phi slicing and a CCD area detector to simultaneously measure the mosaicity of hundreds of reflections . The X-ray beam characteristics and Lorentz correction are deconvoluted from the resulting reflection widths to calculate the true crystal mosaicity.

Lovelace, Jeff↗