Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Contact”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Interference fringe (IF) technique for droplet contact angle and thickness measurements: Ultralow contact angle and nanoscale thickness measurement

Recently, reflection interference fringe (RIF) and transmission fringe (TIF) techniques have been introduced to investigate the origin of far-field interference fringe (IF) formation and to determine a droplet's contact angle and thickness by measuring the fringe radius. In this study, characteristics of the IF technique are analyzed based on the RIF and TIF by varying the schematics, such as configuration (transmission/reflection), the droplet's side (left-hand side/right-hand side), and the substrate types (flat/prism). The analysis also investigates the refraction effect at the droplet edge and the maximum incidence and contact angles. The schematic variation shows that the widest contact angle range can be measured in a transmission configuration with droplet's right-hand side, and that the fringe radius decreases with incidence angles on a prism substrate, consistent with the recent observation. Refraction at the droplet edge causes the fringe radius to increase or decrease depending on the degree of refraction. Based on the characteristics study, it is revealed that the IF technique can determine nanometer-scale thicknesses below 100 nm on droplets, corresponding to ultra-small contact angles of less than 0.01°, with an extended working distance of 3000 mm and an optimized incidence angle, assuming a spherical profile. This finding is significant, as it demonstrates that the nanoscale thickness can be determined in situ under ambient conditions using a simple optical configuration, without requiring a sophisticated setup, such as a microscope. It is anticipated that the IF technique can be combined with other nanoscale thickness measurement techniques to enhance its measurement reliability.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Thermal, mechanical, and electrical properties of LSCo/mullite composite contact materials for solid oxide fuel cells

Lanthanum strontium cobaltite (LSCo) is considered as a good candidate cathode contact material for solid oxide fuel cells, due to high electrical conductivity. However, LSCo has a very large coefficient of thermal expansion (CTE) than the cells and metallic interconnects. As a result, poor mechanical stability is expected during thermal cycling. To minimize the CTE mismatch, we investigate a composite approach involving mixing LSCo with an inert material of low CTE, such as mullite at volume fractions from 0.1 to 0.4. Composite’s CTE shows a decreasing trend with increasing mullite volume fractions, and is consistent with model predictions. X-ray powder diffraction analysis of sintered LSCo/mullite composites exhibits no presence of other phases for samples aged for 500h at 800oC, indicating chemical compatibility. Electrical conductivity by a 4-pt method shows a decreasing trend with increasing mullite content. Contact strength of as-sintered and thermally cycled samples show that only the composite with 0.4 volume fraction has a measurable strength; the other composites have no strength. Overall, the composite approach is demonstrated in the LSCo/mullite system to lower the CTE and hence achieve thermal cycle stability. The addition of the inert phase to the LSCo matrix; however, also reduces the electrical conductivity.

Contact materials, LSCo, mullite, CTE, electrical ↗
DOE OSTI2022

Crystals of $\mathrm{TELSAM}$–target protein fusions that exhibit minimal crystal contacts and lack direct inter-$\mathrm{TELSAM}$ contacts

While conducting pilot studies into the usefulness of fusion to TELSAM polymers as a potential protein crystallization strategy, we observed novel properties in crystals of two TELSAM–target protein fusions, as follows. (i) A TELSAM–target protein fusion can crystallize more rapidly and with greater propensity than the same target protein alone. (ii) TELSAM–target protein fusions can be crystallized at low protein concentrations. This unprecedented observation suggests a route to crystallize proteins that can only be produced in microgram amounts. (iii) The TELSAM polymers themselves need not directly contact one another in the crystal lattice in order to form well-diffracting crystals. This novel observation is important because it suggests that TELSAM may be able to crystallize target proteins too large to allow direct inter-polymer contacts. (iv) Flexible TELSAM–target protein linkers can allow target proteins to find productive binding modes against the TELSAM polymer. (v) TELSAM polymers can adjust their helical rise to allow fused target proteins to make productive crystal contacts. (vi). Fusion to TELSAM polymers can stabilize weak inter-target protein crystal contacts. We report features of these TELSAM–target protein crystal structures and outline future work needed to validate TELSAM as a crystallization chaperone and determine best practices for its use.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

CdSexTe1-x/CdTe Devices with Reduced Interface Recombination Through Novel Back Contacts and Group-V Doping

Since excellent carrier lifetimes and front interface electronic quality are now achieved, rear interface recombination can limit V OC in CdSexTe1-x/CdTe solar cells. Several back-contact structures for devices were fabricated using combinations of tellurium, aluminum oxide, amorphous silicon, and indium tin oxide (ITO). Time-resolved photoluminescence was used to characterize such structures. We show increasingly improved interface passivation through the subsequent use of aluminum oxide, amorphous silicon, and ITO. Additionally, we show that arsenic-doped absorbers form a more passive interface with numerous back contact structures.

aluminum oxide↗
DOE OSTI2022

Phosphorus replenishment to improve the contact resistivity of light-induced Al contacts on Si solar cells

A method to repair laser-induced phosphorus loss from the n-type emitter of Si solar cells during light-induced Al plating is demonstrated. The ability to add a water-reactive phosphorus compound, PCl 5 , into the Al plating bath gives a unique advantage to Al over Cu for front contacts on Si solar cells. The contact resistivity between light-induced Al and Si emitter is reduced to as low as 0.1 mΩ-cm 2 . Cyclic voltammetry performed on a plating bath composed of 81 wt% 1-ethyl-3-methylimidazolium tetrachloroaluminate, 19 wt% AlCl 3 , and 0.2 wt% PCl 5 reveals multiple reduction reactions of PCl 5 , although incomplete decomposition of PCl 5 is possible. A decrease in nucleation loop size during cyclic voltammetry is also observed suggesting that PCl 5 , while being consumed, modifies the growth mechanism during Al plating. Structural analysis confirms that the addition of PCl 5 produces an Al film which is levelized and compact. Here, a pulsed voltage profile coupled with chemical analysis verifies that phosphorus incorporation is electrolytically activated and is likely the cause for the low contact resistivity.

14 SOLAR ENERGY↗
DOE OSTI2022

Investigation of the Interactions Between Low-Temperature Ag Paste Components and SiO2/Poly-Si(n) Contacts and the Impact on Contact Properties

Reducing poly-Si thickness to minimize parasitic absorption on a light-receiving side of a TOPCon solar cell without suffering voltage losses after metallization is a challenge in optimizing TOPCon performance. As an alternative to fire-through pastes, we investigate low-temperature Ag paste to SiO2/poly-Si passivating contacts through fabrication of electrical test structures to characterize the passivation quality and electrical transport across the metallized interface. With current paste chemistries, we find that solvent wetting of the poly-Si surface before evaporation and non-volatile binder resin adhesion to the surface after curing are major impediments which prevent Ag contact formation. However, low- resistance poly-Si/Ag interfaces formed with physical vapour deposition similarly degrade after annealing, indicating contacting issues related to the Ag content even in the absence of the organic paste components.

low temperature Ag paste↗
DOE OSTI2022

Self-Aligned Selective Area Front Contacts on Poly -Si/SiO x Passivating Contact c -Si Solar Cells

We report both polarity poly-Si/SiO x passivating contacts in a front/back device configuration may represent the next solar cell architecture after tunnel oxide passivating contacts (TOPCon) cells, but high parasitic absorption in the front poly -Si layer often limits its performance. This work explores a wet etching technique to remove the front poly -Si in the nonmetallized regions using self-aligned metal grids as an etch mask. We systematically examine various dielectric layers (SiN x ,Al 2 O 3 , and stacks thereof) to study the repassivation of the etched n + surface, and find that an SiN x /Al 2 O 3 passivation stack can effectively repassivate the etched surface, which we attribute to field-effect passivation from the positive fixed charge from the SiN x layer, and excellent chemical passivation property from Al 2 O 3 in the form of atomic H. We demonstrate a front/back poly-Si/SiO x passivating contact device, with an open-circuit voltage (V oc ) of 690 mV, short-circuit current density (J sc ) of 39.8 mA/cm 2 , fill factor of 78%, and power conversion efficiency of 21.4%. Furthermore, simulations using SunSolve and Quokka 3 show good agreement with both the optical and electrical properties of the experimental device. The power loss analysis reveals improvements in the optical loss from the back Ti adhesion and front SiN x layers would lead to a 23.5% device. Lastly, a techno-economic model compares the production cost of this improved cell with the current TOPCon cells. Our results highlight that further cost reductions in single-sided doped poly -Si layers are needed to compete with mainstream passivated emitter and rear cell, and TOPCon technologies.

14 SOLAR ENERGY↗
DOE OSTI2023

Design, development and analysis of large-area industrial silicon solar cells featuring a full area polysilicon based passivating contact on the rear and selective passivating contacts on the front

We present SERIS’ biPoly™ technology platform on large-area (M2), n-type rear-junction silicon solar cells featuring selective poly-Si/SiOx based passivated contacts on the front side and full-area poly-Si/SiOx contacts on the rear. The selective poly-Si ‘fingers’ are formed using an industrial ink-jet masking process followed by wet-chemical etching. The metal contacts are formed by an industrial screen-printing process using high-temperature fire-though metal pastes. We obtain excellent passivation on the front and rear surfaces, resulting in iVoc values between 720 mV and 730 mV on unmetallized solar cells. After high-temperature metallization, we achieve 22% efficiency on solar cells with selective poly-Si fingers on the front. We further develop the model for biPoly™ solar cells and with the help of a detailed loss analysis and simulations, identify the various loss components to identify the device modifications required for efficiency improvements.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Controlling Catalyst–Semiconductor Contacts: Interfacial Charge Separation in p-InP Photocathodes

Charge-carrier-selective interfaces between electrocatalyst particles and semiconductor light absorbers are critical for solar photochemistry but controlling their properties is challenging. Using thin films and nanoparticle arrays of Pt hydrogen-evolution catalysts on p-InP (a high-performance photocathode material), along with macroscopic and nanoscopic electrical and chemical analysis, we show how hydrogen alloying, the pinch-off effect for nanoscale contacts, and the formation of a native surface oxides all play different roles in creating charge-carrier-selective junctions. As a result, the new insights can be broadly applied to photocathodes, photoanodes, and overall water-splitting systems to control charge-carrier selectivity and improve performance.

14 SOLAR ENERGY↗
DOE OSTI2021

Daejeon16 interaction with contact-term corrections for heavy nuclear systems

The Daejeon16 two-nucleon interaction is employed in many-body approaches based on the mean-field approximation. The perturbative character of Daejeon16 is verified by comparing results for 16 O from the Hartree–Fock (HF) approximation and from the no-core shell model and by examining the magnitude of perturbative corrections to the HF energy in light and heavy nuclei. Here, in order to approximately describe energies and radii across the nuclear chart, a phenomenological correction in the form of a two-plus-three-nucleon contact interaction is introduced. With fitted parameters we achieve a very good description of medium-mass nuclei in terms of energy and size and also in terms of the centroid energy of the giant monopole resonance and the dipole polarizability calculated within the random-phase approximation. Our results provide further justification for the use of Daejeon16 augmented with phenomenological corrections as an effective interaction of perturbative character in a variety of applications.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗