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At least 37 records · Page 2

Wireless Measurement of Contact and Motion Between Contact Surfaces

This method uses a magnetic-field- response contact sensor that is designed to identify surface contact and motion between contact locations. The sensor has three components: (1) a capacitor-inductor circuit with two sets of electrical contact pads, (2) a capacitor with a set of electrical contact pads, and (3) an inductor with a set of electrical contact pads. A unique feature of this sensor is that it is inherently multifunctional. Information can be derived from analyzing such sensor response attributes as amplitude, frequency, and bandwidth. A change in one attribute can be due to a change in a physical property of a system. A change in another attribute can be due to another physical property, which has no relationship to the first one.

Woodard, Stanley E.↗

Analytical modeling and simulation of electrical contact resistance for elastic rough electrode surface contact including frictional temperature rise

An improved electrical contact resistance (ECR) model for elastic rough electrode contact is proposed, incorporating the effects of asperity interactions and temperature rise by frictional and joule heating. The analytical simulation results show that the ECR decreases steeply at the beginning of the contact between Al and Cu. However, it becomes stabilized after reaching a specific contact force. It is also found that the longer elapsed sliding contact time, the higher ECR due to the increase in electrical resistivity of electrode materials by the frictional temperature rise at the interface. The effects of surface roughness parameters on ECR are studied through the 3 2 full-factorial design-of-experiment analysis. Based on the two representative roughness parameters, i.e., root-mean-square (rms) roughness and asperity radius, their individual and coupled effects on the saturated ECR are examined. The saturated ECR increases with the rms roughness for a rough machined surface condition, but it is hardly affected by the asperity radius. On the other hand, the saturated ECR increases with both the rms roughness and the asperity radius under a smooth thin film surface condition.

42 ENGINEERING↗

Isolating p- and n-Doped Fingers With Intrinsic Poly-Si in Passivated Interdigitated Back Contact Silicon Solar Cells

Polycrystalline silicon on silicon oxide (poly-Si/SiO x ) passivating contacts enable ultra high efficiency interdigitated back contact silicon solar cells. To prevent shunt between n- and p-type doped fingers, an insulating region is required between them. We evaluate the use of intrinsic poly Si for this isolation region. Interdigitated fingers were formed by plasma deposition of doped hydrogenated amorphous silicon through mechanically aligned shadow masks, on top of a full-area intrinsic amorphous silicon layer. High temperature annealing then crystallized the a-Si:H to poly Si and drove in the dopants. Two mechanisms were identified which cause contamination of the intrinsic poly Si gap during processing. During deposition of doped fingers, we show using secondary ion mass spectrometry and conductivity measurements that the intrinsic gap becomes contaminated by doped a-Si:H tails several nanometers thick to concentrations of ~10 20 cm -3 . Another source of contamination occurs during high-temperature annealing, where dopants desorb from doped regions and readsorb onto intrinsic a Si:H. Both pathways reduce the resistivity of the intrinsic gap from ~10 5 Ω·cm to ~10 -1 Ω·cm. We show that plasma etching of the a-Si:H surface before crystallizing with a capping layer can eliminate the contamination of the intrinsic poly-Si, maintaining a resistivity of ~10 5 Ω·cm. Lastly, this demonstrates masked plasma deposition as a dopant patterning method for Si solar cells.

14 SOLAR ENERGY↗

Carrier gradients and the role of charge selective contacts in lateral heterojunction all back contact perovskite solar cells

Realizing photovoltaic devices that achieve the full potential of the metal halide perovskite material will require improved insight regarding the role of selective contacts and how key interfaces operate when mobile defects are present. However, measuring interface properties in typical device stacks where the perovskite layer is thin and sandwiched between two contacts has been a challenge. Here, we fabricate p-i-n and p-n lateral heterojunctions with nickel oxide/titanium oxide all back contacts, permitting us to employ a comprehensive analysis approach, including ultraviolet and X-ray photoemission spectroscopy (UPS/XPS), angle-resolved X-ray absorption spectroscopy (XAS), Kelvin probe force microscopy (KPFM), surface photovoltage (SPV), hyperspectral imaging (HSI), and time-resolved fluorescence lifetime imaging microscopy (TR-FLIM) to discern the role of selective contacts. Specifically, we tune the selectivity of the contacts, changing the gradient in the carrier concentration across the surface of the active layer, which is connected to carrier extraction at the buried interface, and thus the device functionality.

25 ENERGY STORAGE↗

Copper Outdiffusion from Copper-Plated Solar Cell Contacts during Damp Heat Exposure

Plated copper (Cu) contacts for silicon (Si) solar cells are an attractive alternative material to conventional screenprinted silver, but there are unresolved questions on the long-term integrity of plated contact structures. Here, in this work, we perform characterization on plated Cu contacts from encapsulated cells that were degraded during extended exposure to damp heat (DH) stress. First, using energy-dispersive X-ray spectroscopy, we find evidence of Cu outdiffusion upward through capping layers made of both tin and silver applied with light-induced plating, resulting in a layer of Cu on the outer contact surface. We hypothesize that if Cu is mobile in the module, it may eventually find some route by which to enter the Si cells where it can degrade performance. Subsequently, in several types of Cu-plated, DH-degraded cells, secondary ion mass spectrometry detects elevated levels of Cu at the Si surface and in the Si cell bulk, which suggests that Cu can indeed migrate from contacts into Si over the course of DH stress.

14 SOLAR ENERGY↗

Determination of the Actual Contact Surface of a Brush Contact

The number of partial contact surfaces of a brush-ring contact is measured by means of a statistical method. The particular brush is fitted with wicks - that is, insulated and cemented cylinders of brush material, terminating in the brush surface. The number of partial contact surfaces can be computed from the length of the rest periods in which such wicks remain without current. Resistance measurements enable the determination of the size of the contact surfaces. The pressure in the actual contact surface of a recently bedded brush is found to be not much lower than the Brinell hardness of the brush.

Holm, Ragnar↗

Tailoring the Surface of Metal Halide Perovskites to Enable the Atomic Layer Deposition of Metal Oxide Contacts

Replacing organic contact layers with inorganic counterparts, such as metal oxides, is one strategy for improving long-term device stability in metal halide perovskite solar cells. Often, the methods used to deposit metal oxide thin films are incompatible with metal halide perovskites, creating challenges for the fabrication of contacts above the perovskite absorber layer. In this study, we utilize a one-step, solution treatment of the top surface of Cs 0.25 FA 0.75 Pb(Br 0.20 I 0.80 ) 3 to create a thin (~1 nm) overlayer of lead sulfide (PbS) to protect the underlying perovskite during subsequent deposition. X-ray characterization of the surface region shows that the PbS overlayer limits undesirable changes to the perovskite structure and stoichiometry during atomic layer deposition (ALD) of SnO 2 . This protection enables ALD growth of SnO 2 electron contacts on top of the perovskite without an organic transport layer (e.g., C 60 ), resulting in a solar cell with a power conversion efficiency of 5.8%. This result is a marked improvement over devices with ALD SnO 2 grown directly on the perovskite without a PbS overlayer, which produce no power output. Furthermore, the interface characterization and device results in this study highlight some of the key challenges associated with ALD metal oxide growth on perovskite materials and can help inform the future design of inorganic contact layer deposition in solar photovoltaic technologies.

36 MATERIALS SCIENCE↗

The study of contact properties in edge-contacted graphene–aluminum Josephson junctions

Transparent contact interfaces in superconductor–graphene hybrid systems are critical for realizing superconducting quantum applications. Here, we examine the effect of the edge contact fabrication process on the transparency of the superconducting aluminum–graphene junction. We show significant improvement in the transparency of our superconductor–graphene junctions by promoting the chemical component of the edge contact etch process. Our results compare favorably with state-of-the-art graphene Josephson junctions. The findings of our study contribute to advancing the fabrication knowledge of edge-contacted superconductor–graphene junctions.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Interference fringe (IF) technique for droplet contact angle and thickness measurements: Ultralow contact angle and nanoscale thickness measurement

Recently, reflection interference fringe (RIF) and transmission fringe (TIF) techniques have been introduced to investigate the origin of far-field interference fringe (IF) formation and to determine a droplet's contact angle and thickness by measuring the fringe radius. In this study, characteristics of the IF technique are analyzed based on the RIF and TIF by varying the schematics, such as configuration (transmission/reflection), the droplet's side (left-hand side/right-hand side), and the substrate types (flat/prism). The analysis also investigates the refraction effect at the droplet edge and the maximum incidence and contact angles. The schematic variation shows that the widest contact angle range can be measured in a transmission configuration with droplet's right-hand side, and that the fringe radius decreases with incidence angles on a prism substrate, consistent with the recent observation. Refraction at the droplet edge causes the fringe radius to increase or decrease depending on the degree of refraction. Based on the characteristics study, it is revealed that the IF technique can determine nanometer-scale thicknesses below 100 nm on droplets, corresponding to ultra-small contact angles of less than 0.01°, with an extended working distance of 3000 mm and an optimized incidence angle, assuming a spherical profile. This finding is significant, as it demonstrates that the nanoscale thickness can be determined in situ under ambient conditions using a simple optical configuration, without requiring a sophisticated setup, such as a microscope. It is anticipated that the IF technique can be combined with other nanoscale thickness measurement techniques to enhance its measurement reliability.

36 MATERIALS SCIENCE↗

Thermal, mechanical, and electrical properties of LSCo/mullite composite contact materials for solid oxide fuel cells

Lanthanum strontium cobaltite (LSCo) is considered as a good candidate cathode contact material for solid oxide fuel cells, due to high electrical conductivity. However, LSCo has a very large coefficient of thermal expansion (CTE) than the cells and metallic interconnects. As a result, poor mechanical stability is expected during thermal cycling. To minimize the CTE mismatch, we investigate a composite approach involving mixing LSCo with an inert material of low CTE, such as mullite at volume fractions from 0.1 to 0.4. Composite’s CTE shows a decreasing trend with increasing mullite volume fractions, and is consistent with model predictions. X-ray powder diffraction analysis of sintered LSCo/mullite composites exhibits no presence of other phases for samples aged for 500h at 800oC, indicating chemical compatibility. Electrical conductivity by a 4-pt method shows a decreasing trend with increasing mullite content. Contact strength of as-sintered and thermally cycled samples show that only the composite with 0.4 volume fraction has a measurable strength; the other composites have no strength. Overall, the composite approach is demonstrated in the LSCo/mullite system to lower the CTE and hence achieve thermal cycle stability. The addition of the inert phase to the LSCo matrix; however, also reduces the electrical conductivity.

Contact materials, LSCo, mullite, CTE, electrical ↗

Crystals of $\mathrm{TELSAM}$–target protein fusions that exhibit minimal crystal contacts and lack direct inter-$\mathrm{TELSAM}$ contacts

While conducting pilot studies into the usefulness of fusion to TELSAM polymers as a potential protein crystallization strategy, we observed novel properties in crystals of two TELSAM–target protein fusions, as follows. (i) A TELSAM–target protein fusion can crystallize more rapidly and with greater propensity than the same target protein alone. (ii) TELSAM–target protein fusions can be crystallized at low protein concentrations. This unprecedented observation suggests a route to crystallize proteins that can only be produced in microgram amounts. (iii) The TELSAM polymers themselves need not directly contact one another in the crystal lattice in order to form well-diffracting crystals. This novel observation is important because it suggests that TELSAM may be able to crystallize target proteins too large to allow direct inter-polymer contacts. (iv) Flexible TELSAM–target protein linkers can allow target proteins to find productive binding modes against the TELSAM polymer. (v) TELSAM polymers can adjust their helical rise to allow fused target proteins to make productive crystal contacts. (vi). Fusion to TELSAM polymers can stabilize weak inter-target protein crystal contacts. We report features of these TELSAM–target protein crystal structures and outline future work needed to validate TELSAM as a crystallization chaperone and determine best practices for its use.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

CdSexTe1-x/CdTe Devices with Reduced Interface Recombination Through Novel Back Contacts and Group-V Doping

Since excellent carrier lifetimes and front interface electronic quality are now achieved, rear interface recombination can limit V OC in CdSexTe1-x/CdTe solar cells. Several back-contact structures for devices were fabricated using combinations of tellurium, aluminum oxide, amorphous silicon, and indium tin oxide (ITO). Time-resolved photoluminescence was used to characterize such structures. We show increasingly improved interface passivation through the subsequent use of aluminum oxide, amorphous silicon, and ITO. Additionally, we show that arsenic-doped absorbers form a more passive interface with numerous back contact structures.

aluminum oxide↗

Contact detection and contact motion for error recovery in the presence of uncertainties

Due to various kinds of uncertainties, a robot motion may fail and result in some unintended contact between the object held by the robot and the environment, which greatly hampers robotics applications on tasks with high-precision requirements, such as assembly tasks. Aiming at automatically recovering a robotic task from such a failure, this paper discusses, in the presence of uncertainties, contact detection based on contact motion for recovery. It presents a framework for on-line recognizing contacts using multiple sensor modalities in the presence of sensing uncertainties and means for ensuring successful compliant motions in the presence of sensing and control uncertainties.

Xiao, Jing↗

Phosphorus replenishment to improve the contact resistivity of light-induced Al contacts on Si solar cells

A method to repair laser-induced phosphorus loss from the n-type emitter of Si solar cells during light-induced Al plating is demonstrated. The ability to add a water-reactive phosphorus compound, PCl 5 , into the Al plating bath gives a unique advantage to Al over Cu for front contacts on Si solar cells. The contact resistivity between light-induced Al and Si emitter is reduced to as low as 0.1 mΩ-cm 2 . Cyclic voltammetry performed on a plating bath composed of 81 wt% 1-ethyl-3-methylimidazolium tetrachloroaluminate, 19 wt% AlCl 3 , and 0.2 wt% PCl 5 reveals multiple reduction reactions of PCl 5 , although incomplete decomposition of PCl 5 is possible. A decrease in nucleation loop size during cyclic voltammetry is also observed suggesting that PCl 5 , while being consumed, modifies the growth mechanism during Al plating. Structural analysis confirms that the addition of PCl 5 produces an Al film which is levelized and compact. Here, a pulsed voltage profile coupled with chemical analysis verifies that phosphorus incorporation is electrolytically activated and is likely the cause for the low contact resistivity.

14 SOLAR ENERGY↗

Investigation of the Interactions Between Low-Temperature Ag Paste Components and SiO2/Poly-Si(n) Contacts and the Impact on Contact Properties

Reducing poly-Si thickness to minimize parasitic absorption on a light-receiving side of a TOPCon solar cell without suffering voltage losses after metallization is a challenge in optimizing TOPCon performance. As an alternative to fire-through pastes, we investigate low-temperature Ag paste to SiO2/poly-Si passivating contacts through fabrication of electrical test structures to characterize the passivation quality and electrical transport across the metallized interface. With current paste chemistries, we find that solvent wetting of the poly-Si surface before evaporation and non-volatile binder resin adhesion to the surface after curing are major impediments which prevent Ag contact formation. However, low- resistance poly-Si/Ag interfaces formed with physical vapour deposition similarly degrade after annealing, indicating contacting issues related to the Ag content even in the absence of the organic paste components.

low temperature Ag paste↗