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Results for “Charge mobility”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Direct probe of the nuclear modes limiting charge mobility in molecular semiconductors

Recent theories suggest that low frequency dynamic intramolecular and intermolecular motions in organic semiconductors (OSCs) are critical to determining the hole mobility. So far, however, it has not been possible to probe these motions directly experimentally and therefore no unequivocal and quantitative link exists between molecular-scale thermal disorder and macroscale hole mobility in OSCs. Here we use inelastic neutron scattering to probe thermal disorder directly by measuring the phonon spectrum in six different small molecule OSCs, which we accurately reproduce with first principles simulations. We use the simulated phonons to generate a set of electron–phonon coupling parameters. Using these parameters, the theoretical mobility is in excellent agreement with macroscopic measurements. Comparison of mobility between different materials reveals routes to improve mobility by engineering phonon and electron–phonon coupling.

36 MATERIALS SCIENCE↗
DOE OSTI2019

SURFACE CHARGE MOBILITY THEORY: An explanation for certain “Microwave Effects”

Many of these “Microwave Effects” can be easily understood when the mechanisms and physical phenomena involved are thoroughly understood. What follows is my view of these “Microwave Effects” and the theories I have used to cope with the disparity between what we observe through experiments, and what we know from “Microwave theory” and lassical physics.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Flexible cobalt-phthalocyanine thin films with high charge carrier mobility

The structural and charge transport characteristics of cobalt phthalocyanine (CoPc) films deposited on flexible bi-axially oriented polyethylene terephthalate (BOPET) substrates are investigated. CoPc films exhibited a preferential (200) orientation with charge carrier mobility of {approx}118 cm{sup 2} V{sup -1} s{sup -1} (at 300 K). These films exhibited a reversible resistance changes upon bending them to different radius of curvature. The charge transport in CoPc films is governed by a bias dependent crossover from ohmic (J-V) to trap-free space-charge limited conduction (J-V{sup 2}). These results demonstrate that CoPc films on flexible BOPET having high mobility and high mechanical flexibility are a potential candidate for flexible electronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2017

On the high charge-carrier mobility in polyaniline molecular channels in nanogaps between carbon nanotubes

This study is devoted to the fabrication of molecular semiconductor channels based on polymer molecules with nanoscale electrodes made of single-walled carbon nanotubes. A reproducible technology for forming nanoscale gaps in carbon nanotubes using a focused Ga{sup +} ion beam is proposed. Polyaniline molecules are deposited into nanogaps up to 30 nm wide between nanotubes by electrophoresis from N-methyl-2-pyrrolidone solution. As a result, molecular organic transistors are fabricated, in which the field effect is studied and the molecular-channel mobility is determined as 0.1 cm{sup 2}/(V s) at an on/off current ratio of 5 × 10{sup 2}.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Quantification of Steady-State Ion Transport through Single Conical Nanopores and a Nonuniform Distribution of Surface Charges

Electrostatic interactions of mobile charges in solution with the fixed surface charges are known to strongly affect stochastic sensing and electrochemical energy conversion processes at nanodevices or devices with nanostructured interfaces. The key parameter to describe this interaction, surface charge density (SCD), is not directly accessible at nanometer scale and often extrapolated from ensemble values. In this report, the steady-state current–voltage (i–V) curves measured using single conical glass nanopores in different electrolyte solutions are fitted by solving Poisson and Nernst–Planck equations through finite element approach. Both high and low conductivity state currents of the rectified i–V curve are quantitatively fitted in simulation at less than 5% error. The overestimation of low conductivity state current using existing models is overcome by the introduction of an exponential SCD distribution inside the conical nanopore. A maximum SCD value at the pore orifice is determined from the fitting of the high conductivity state current, while the distribution length of the exponential SCD gradient is determined by fitting the low conductivity state current. Quantitative fitting of the rectified i–V responses and the efficacy of the proposed model are further validated by the comparison of electrolytes with different types of cations (K + and Li + ). In conclusion, the gradient distribution of surface charges is proposed to be dependent on the local electric field distribution inside the conical nanopore.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Remarkable enhancement of charge carrier mobility of conjugated polymer field-effect transistors upon incorporating an ionic additive

Organic semiconductors with high charge carrier mobilities are crucial for flexible electronic applications. Apart from designing new conjugated frameworks, different strategies have been explored to increase charge carrier mobilities. We report a new and simple approach to enhancing the charge carrier mobility of DPP-thieno[3,2-b]thiophene–conjugated polymer by incorporating an ionic additive, tetramethylammonium iodide, without extra treatments into the polymer. The resulting thin films exhibit a very high hole mobility, which is higher by a factor of 24 than that of thin films without the ionic additive under the same conditions. On the basis of spectroscopic grazing incidence wide-angle x-ray scattering and atomic force microscopy studies as well as theoretical calculations, the remarkable enhancement of charge mobility upon addition of tetramethylammonium iodide is attributed primarily to an inhibition of the torsion of the alkyl side chains by the presence of the ionic species, facilitating a more ordered lamellar packing of the alkyl side chains and interchain π-π interactions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Solid state cloaking for electrical charge carrier mobility control

An electrical mobility-controlled material includes a solid state host material having a controllable Fermi energy level and electrical charge carriers with a charge carrier mobility. At least one Fermi level energy at which a peak in charge carrier mobility is to occur is prespecified for the host material. A plurality of particles are distributed in the host material, with at least one particle disposed with an effective mass and a radius that minimize scattering of the electrical charge carriers for the at least one prespecified Fermi level energy of peak charge carrier mobility. The minimized scattering of electrical charge carriers produces the peak charge carrier mobility only at the at least one prespecified Fermi level energy, set by the particle effective mass and radius, the charge carrier mobility being less than the peak charge carrier mobility at Fermi level energies other than the at least one prespecified Fermi level energy.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Measuring charge carrier mobility in photovoltaic devices with micron-scale resolution

We present a charge-extraction technique, micron-scale charge extraction by linearly increasing voltage, which enables simultaneous spatially resolved measurements of charge carrier mobility and photocurrent in thin-film photovoltaic devices with micron-scale resolution. An intensity-modulated laser with beam diameter near the optical diffraction limit is scanned over the device, while a linear voltage ramp in reverse bias is applied at each position of illumination. We calculate the majority carrier mobility, photocurrent, and number of photogenerated charge carriers from the resulting current transient. We demonstrate this technique on an organic photovoltaic device, but it is applicable to a wide range of photovoltaic materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1990

Charged polymers in high dimensions

A Monte Carlo study of charged polymers with either homogeneously distributed frozen charges or with mobile charges has been performed in four and five space dimensions. The results are consistent with the renormalization-group predictions and contradict the predictions of Flory-type theory. Introduction of charge mobility does not modify the behavior of the polymers.

Kantor, Yacov↗
DOE OSTI2017

Large Modulation of Charge Carrier Mobility in Doped Nanoporous Organic Transistors

Molecular doping of organic electronics has shown promise to sensitively modulate important device metrics. One critical challenge is the disruption of structure order upon doping of highly crystalline organic semiconductors, which significantly reduces the charge carrier mobility. This paper demonstrates a new method to achieve large modulation of charge carrier mobility via channel doping without disrupting the molecular ordering. Central to the method is the introduction of nanopores into the organic semiconductor thin films via a simple and robust templated meniscus-guided coating method. Using this method, the charge carrier mobility of C 8 -benzothieno[3,2-b]benzothiophene transistors is boosted by almost sevenfold. This paper further demonstrates enhanced electron transport by close to an order of magnitude in a diketopyrrolopyrrole-based donor–acceptor polymer. Combining spectroscopic measurements, density functional theory calculations, and electrical characterizations, the doping mechanism is identified as partial-charge-transfer induced trap filling. The nanopores serve to enhance the dopant/organic semiconductor charge transfer reaction by exposing the π-electrons to the pore wall.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Effect of temperature and rare-earth doping on charge-carrier mobility in indium-monoselenide crystals

In the temperature range T = 77-600 K, the dependence of the charge-carrier mobility ({mu}) on the initial dark resistivity is experimentally investigated at 77 K ({rho}d{sub 0}), as well as on the temperature and the level (N) of rare-earth doping with such elements as gadolinium (Gd), holmium (Ho), and dysprosium (Dy) in n-type indium-monoselenide (InSe) crystals. It is established that the anomalous behavior of the dependences {mu}(T), {mu}({rho}d{sub 0}), and {mu}(N) found from the viewpoint of the theory of charge-carrier mobility in crystalline semiconductors is related, first of all, to partial disorder in indium-monoselenide crystals and can be attributed to the presence of random drift barriers in the free energy bands.

36 MATERIALS SCIENCE↗