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Analog charge-coupled devices and sampled data filtering have developed into mature disciplines. Each discipline offers the other wide systems advantages where alone it would be impractical. This letter explores these advantages in a number of implementations against the scale of wide low-cost applications.
A variety of charged coupled devices (CCDs) for performing programmable correlation for preprocessing environmental sensor data preparatory to its transmission to the ground were developed. A total of two separate ICs were developed and a third was evaluated. The first IC was a CCD chirp z transform IC capable of performing a 32 point DFT at frequencies to 1 MHz. All on chip circuitry operated as designed with the exception of the limited dynamic range caused by a fixed pattern noise due to interactions between the digital and analog circuits. The second IC developed was a 64 stage CCD analog/analog correlator for performing time domain correlation. Multiplier errors were found to be less than 1 percent at designed signal levels and less than 0.3 percent at the measured smaller levels. A prototype IC for performing time domain correlation was also evaluated.
The design specifications and predicted performance characteristics of a Charge-Coupled Device Area Imager and a Charge-Coupled Device Linear Imager are presented. The Imagers recommended are intended for use in space-borne imaging systems and therefore would meet the requirements for the intended application. A unique overlapping metal electrode structure and a buried channel structure are described. Reasons for the particular imager designs are discussed.
Large-area backside illuminated charge-coupled device imagers have been fabricated using double level aluminum transfer electrode technology. Devices with 100 x 160 and 400 x 400 resolution elements have been fabricated using buried channel technology for high charge transfer efficiency. Detailed optical characterization has been performed on these imagers over the temperature range -40 to +24 C and at several operating frequencies between 10 kHz and 1 MHz.
The developments in charge-coupled device technology over the past decade are reviewed, with emphasis on the relevance of these developments to astronomical applications. The characteristics and limitations of current commercial devices are described, and the future requirements on CCDs for space astronomy are summarized for the X-ray and near UV, optical, and infrared wavelength ranges. Emphasis is placed on the commonality of technological development which is called for, including the issues of quantum detection efficiency (photon entrance and depletion depth), charge transfer efficiency, modulation transfer function, output noise level, and array size. The system requirements on focal plane instrumentation for space astronomy are summarized, and shown to have much in common for the different wavelength bands. These requirements are discussed in terms of CCD mosaicing, cryogenic cooling, and electronics. The overlap in CCD developments in the defense, astronomical and commercial arenas is summarized.
CCD's suspended by wires under tension. Remote thermoelectric cooling of charge coupled device allows vibration isolating mounting of CCD assembly alone, without having to suspend entire mass and bulk of thermoelectric module. Mounting hardware simple and light. Developed for charge-coupled devices (CCD's) in infrared telescope support adaptable to sensors in variety of environments, e.g., sensors in nuclear reactors, engine exhausts and plasma chambers.
We report the use fo delta-doped charge-coupled devices (CCDs) for direct detection of electrons in the 50-1500 eV energy range. These are the first measurements with a solid state device to detect electrons in this energy range.
Radiation damage is reported on CCDs (charge-coupled devices) that have been primarily exposed to 1.25-MeV gamma rays (Co-60 source). Two important classes of radiation damage are discussed, namely, bulk and ionization effects. Bulk damage or displacement damage is a process in which silicon atoms are displaced from their normal lattice positions by high-energy photons or particles. Single atomic displacements or cluster defect damage is produced, depending on the energy and type of radiation experienced by the detector. Bulk damage creates trapping sites within the CCD's signal channel which in turn degrades charge-transfer efficiency.
An array photometer which uses an intensified charge coupled device was developed. This system, the University of Maryland Array Photometer (UMAP), has the ability to discriminate single photoelectron events in real time at a 4 Megahertz rate. The photosensor uses an S-20 photocathode and a Fairchild CCD202 with a 100 by 100 array of separate individual channels. The overall system has demonstrated a noise level which permits single photoelectron discrimination, a scan rate of 400 frames per second, a very linear response, and very low lag. The UMAP system has a very large dynamic range exceeding 10,000 in the photon counting mode. A special technique to extend the dynamic range to 1,000,000 was described. The performance parameters of this system, both in the laboratory and on the telescope were cited. Data from these observations were discussed to illustrate the system sensitivity, which is basically limited by the pixel size in the array, rather than the electrooptics.
A charge-transfer efficiency of 99.99% per stage was achieved in the fat-zero mode of operation of 64- and 128-stage two-phase charge-coupled shift registers at 1.0-MHz clock frequency. The experimental two-phase charge-coupled shift registers were constructed in the form of polysilicon gates overlapped by aluminum gates. The unidirectional signal flow was accomplished by using n-type substrates with 0.5 to 1.0 ohm-cm resistivity in conjunction with a channel oxide thickness of 1000 A for the polysilicon gates and 3000 A for the aluminum gates. The operation of the tested shift registers with fat zero is in good agreement with the free-charge transfer characteristics expected for the tested structures. The charge-transfer losses observed when operating the experimental shift registers without the fat zero are attributed to fast interface state trapping. The analytical part of the report contains a review backed up by an extensive appendix of the free-charge transfer characteristics of CCD's in terms of thermal diffusion, self-induced drift, and fringing field drift. Also, a model was developed for the charge-transfer losses resulting from charge trapping by fast interface states. The proposed model was verified by the operation of the experimental two-phase charge-coupled shift registers.
Multi-pinned-phase (MPP) technology allows charge-coupled device (CCD) to operate totally inverted during both integration and readout while maintaining other performance characteristics. MPP-CCD made with positive doping implants defining barrier phases. When all phases biased together into inversion, dark current reduced, and potential of charge-collecting wells is difference between potentials of barrier and collection phases. Advantages include complete elimination of residual image effects during integration and readout, low pixel nonuniformity, and increase in quantum efficiency in near infrared because higher operating temperatures used. More tolerant to ionizing radiation environments.
We use a science-grade skipper charge-coupled device (skipper CCD) operating in a low-radiation background environment to develop a semi-empirical model that characterizes the origin of single-electron events in CCDs. We identify, separate, and quantify three independent contributions to the single-electron events, which were previously bundled together and classified as "dark counts": dark current, amplifier light, and spurious charge. We measure a dark current, which depends on exposure, of (5.89±0.77)×10 -4 e - /pix/day, and an unprecedentedly low spurious charge contribution of (1.52±0.07)×10 -4 e - /pix, which is exposure independent. In addition, we provide a technique to study events produced by light emitted from the amplifier, which allows the detector's operation to be optimized to minimize this effect to a level below the dark-current contribution. Our accurate characterization of the single-electron events allows one to greatly extend the sensitivity of experiments searching for dark matter or coherent neutrino scattering. Moreover, an accurate understanding of the origin of single-electron events is critical to further progress in ongoing research and development efforts of skipper and conventional CCDs.
An evaluation of a charge-coupled device (CCD) image sensors for use in spacecraft-borne imaging systems was conducted. The study resulted in design recommendations for two sensors, an approximately 500 times 500 element imaging device and a 1 times 190 element linear imaging device with a 190 times 121 buffer store. Emphasis was placed on the higher resolution, area-imaging sensor. The objectives of the proposed sensors are listed, results of the experiments are analyzed, and estimates of the device performance are presented. A summary of the major technical recommendations is included.
Recent report describes reliability study of two charge-coupled-device (CCD) shift registers. Major objective of study was to establish methodology for selecting, testing, screening, derating and applying CCD's. Includes a discussion of CCD structures and operating principles. Characteristics of SCCD and BCCD types are compared.
A simple model is presented that makes it possible to predict signal losses in charge-coupled devices due to fast-interface-state trapping. Presented experimental losses in a twelve-bit two-phase charge-coupled device with overlapping Si and Al gates are shown to agree well with the prediction of the model.
The use of polycrystalline silicon in charged coupled semiconductor devices is discussed. In particular, the electrical and optical properties of the material are characterized.
The potential use of charge coupled device (CCD) programmable digital/analog correlators for multispectral data classification is discussed. CCD digital/analog correlator technology and the experimental evaluation of a 32-stage 4-bit test device are presented. The design of an IC for use in a multispectral classification system for 16 sensors and 8 bit accuracy is reviewed.
A fully portable self-contained charge-coupled device system has been constructed for shared use with the Galileo Project Imaging Team. The detector currently incorporated in the system is a Texas Instruments 500 x 500 three-phase CCD that has been thinned to operate in the backside illuminated mode. The detector and camera mainframe electronics were provided by the Jet Propulsion Laboratory. The support electronics and control interfaces necessary to operate the mainframe were constructed. The data system, which is built around a DeAnza Visacom VC-5000 Image Processor with an imbedded LSI-11 minicomputer, was also integrated. The capability to do image processing in real-time at the telescope has proved to be extremely valuable. The overall system read noise has been measured at 25 electrons. Full-well capacity is 40,000 electrons. Some results from laboratory tests and initial observing runs at the Mauna Kea 2.2-m telescope are presented.