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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2

Comparison of the effects of ionizing radiation at twelve dose rates from 0.0015 to 100 rad(Si)/s

Evidence is presented that two competing failure mechanisms exist in the Si-SiO2 system, with one mechanism dominating at low dose rates and the other at high. Much lower dose failures than expected were discovered at low dose rates (less than 0.1 rad(Si)/s) and very low dose rates (about 0.001 rad(Si)/s) in commercial SGS 4007 CMOS devices. These failure doses plotted versus dose rate have a bell-shaped curve, rather than the expected straight line (decreasing with increasing dose rate), indicating that a different failure mechanism is dominant at low dose rates than at high.

Goben, C. A.↗

An observation of proton-induced latchup

Proton-induced latchup in a CMOS microprocessor known to have a very low heavy-ion-induced latchup threshold LET was observed. The latchup cross section vs. proton energy for three different bias conditions is displayed. Average measures of latchup current within an 11-ms window following the onset of latchup are provided, as a function of bias and incident proton energy. These data can be interpreted in terms of the present understanding of SEE phenomena.

Nichols, Donald K.↗

Single event effects and laser simulation studies

The single event upset (SEU) linear energy transfer threshold (LETTH) of radiation hardened 64K Static Random Access Memories (SRAM's) was measured with a picosecond pulsed dye laser system. These results were compared with standard heavy ion accelerator (Brookhaven National Laboratory (BNL)) measurements of the same SRAM's. With heavy ions, the LETTH of the Honeywell HC6364 was 27 MeV-sq cm/mg at 125 C compared with a value of 24 MeV-sq cm/mg obtained with the laser. In the case of the second type of 64K SRAM, the IBM640lCRH no upsets were observed at 125 C with the highest LET ions used at BNL. In contrast, the pulsed dye laser tests indicated a value of 90 MeV-sq cm/mg at room temperature for the SEU-hardened IBM SRAM. No latchups or multiple SEU's were observed on any of the SRAM's even under worst case conditions. The results of this study suggest that the laser can be used as an inexpensive laboratory SEU prescreen tool in certain cases.

Kim, Q.↗

Determination Of LETs Of SRAMs By Use Of A Laser

Report describes experimental study of use of microelectronic advanced laser scanner (MEALS) to cause single-event upsets (SEUs) in integrated logic circuits. Basic concepts of SEU testing by use of MEALS described in "Laser Scanner Tests for Single-Event Upsets" (NPO-18216), "Single-Event-Upset Laser Scanner With Optical Bias" (NPO-18217), and "More About Laser Scanner Tests for Single-Event Upsets" (NPO-18494). Study part of continuing effort to study SEU effects of ionizing radiation on such circuits and to use MEALS as relatively inexpensive SEU-prescreening laboratory apparatus serving as alternative to heavy-ion acclerator.

Kim, Quiesup↗

Compiled Data On Single-Event Effects Caused By Heavy Ions

Report presents test data on susceptibility of new set of digital integrated circuits and other semiconductor products to single-event effects (soft errors and latchups) caused by heavy ions incident at high energies. Data used to develop generalizations for protecting electronic equipment from single-event effects. In some cases, tested parts selected as candidates for use in specific applications.

Nichols, Donald K.↗

Device SEE Susceptibility Update: 1996-1998

This eighth Compendium continues the previous work of Nichols, et al, on single event effects (SEE) first published in 1985. Because the compendium has grown so voluminous, this update only presents data not publised in previous compendia.

Coss, J. R.↗

Overview of Device SEE Susceptibility from Heavy Ions

A fifth set of heavy ion single event effects (SEE) test data have been collected since the last IEEE publications (1,2,3,4) in December issues for 1985, 1987, 1989, and 1991. Trends in SEE susceptibility (including soft errors and latchup) for state-of-the-art parts are evaluated.

Nichols, D. K.↗

Heavy Ion and Proton Induced Single Event Transients in Linear Devices

This paper presents a display of heavy-ion and proton-induced single event transients for selected linear devices. The transient vital signs are serious; low LET threshold, high voltage amplitude and extended pulse duration (microsecs.).

heavy ions ions transients linear devices LET thre↗

Trends in Device SEE Susceptibility from Heavy Ions

The sixth set of heavy ion single event effects (SEE) test data have been collected since the last IEEE publications in December issues of IEEE - Nuclear Science Transactions for 1985, 1987, 1989, 1991, and the IEEE Workshop Record, 1993. Trends in SEE susceptibility (including soft errors and latchup) for state-of- are evaluated.

single event effects latchup radiation hardening↗

Observations of Single Event Failure in Power MOSFETS

The first compendium of single event test data for power MOSFETs provides failure thresholds from burnout or gate rupture for over 100 devices of eight manufacturers. Ordering the data has also provided some useful insights.

bipolar power transistors single event test burnou↗

Single Event Effects on Space Radiation Hardened 64K SRAMS at Room temperature

The laser threshold linear Energy transfer for single event upsetscan be estimaed, even at room temperature, for space radiation hardened 64K SRAMs. The memories where independently developed to quality for the Qualified Manufacturer's List by IBM and Honeywell. The memory was so hard that high energy heavy ions generated by the Van de Graff could not determine the SEU threshold at room temperature. Use of pulsed Laser tests would meake it possible to forgo very expensive testing at ultra-high energy accelerators.

Space Radiation 64K SRAMS↗

Compendium of Single Event Failures in Power MOSFETs

This compendium of SEGR and SEB data organizes results from several laboratories comparing failure thresholds for several different manufacturers and technologies. The results of this compendium are aimed at the designer to show the possible variations between manufacturers and processes.

Single Event Failures MOSFETs SEGR SEB↗

The OASIS Mission

The Orbiting Astrophysical Observatory in Space (OASIS) is a mission to investigate Galactic Cosmic Rays (GCRs), a major feature of our galaxy. OASIS will use measurements of GCRs to determine the cosmic ray source, where they are accelerated, to investigate local accelerators and to learn what they can tell us about the interstellar medium and the processes that occur in it. OASIS will determine the astrophysical sources of both the material and acceleration of GCRs by measuring the abundances of the rare actinide nuclei and make direct measurements of the spectrum and anisotropy of electrons at energies up to approx.10 TeV, well beyond the range of the Fermi and AMS missions. OASIS has two instruments. The Energetic Trans-Iron Composition Experiment (ENTICE) instrument measures elemental composition. It resolves individual elements with atomic number (Z) from 10 to 130 and has a collecting power of 60m2.str.yrs, >20 times larger than previous instruments, and with improved resolution. The sample of 10(exp 10) GCRs collected by ENTICE will include .100 well-resolved actinides. The High Energy Particle Calorimeter Telescope (HEPCaT) is an ionization calorimeter that will extend the electron spectrum into the TeV region for the first time. It has 7.5 sq m.str.yrs of collecting power. This talk will describe the scientific objectives of the OASIS mission and its discovery potential. The mission and its two instruments which have been designed to accomplish this investigation will also be described.

Adams, James H., Jr.↗

Altimetry for the Future: Building on 25 Years of Progress

In 2018 we celebrated 25 years of development of radar altimetry, and the progress achieved by this methodology in the fields of global and coastal oceanography, hydrology, geodesy and cryospheric sciences. Many symbolic major events have celebrated these developments, e.g., in Venice, Italy, the 15th (2006) and 20th (2012) years of progress and more recently, in 2018, in Ponta Delgada, Portugal, 25 Years of Progress in Radar Altimetry. On this latter occasion it was decided to collect contributions of scientists, engineers and managers involved in the worldwide altimetry community to depict the state of altimetry and propose recommendations for the altimetry of the future. This paper summarizes contributions and recommendations that were collected and provides guidance for future mission design, research activities, and sustainable operational radar altimetry data exploitation. Recommendations provided are fundamental for optimizing further scientific and operational advances of oceanographic observations by altimetry, including requirements for spatial and temporal resolution of altimetric measurements, their accuracy and continuity. There are also new challenges and new openings mentioned in the paper that are particularly crucial for observations at higher latitudes, for coastal oceanography, for cryospheric studies and for hydrology. The paper starts with a general introduction followed by a section on Earth System Science including Ocean Dynamics, Sea Level, the Coastal Ocean, Hydrology, the Cryosphere and Polar Oceans and the ‘‘Green” Ocean, extending the frontier from biogeochemistry to marine ecology. Applications are described in a subsequent section, which covers Operational Oceanography, Weather, Hurricane Wave and Wind Forecasting, Climate projection. Instruments’ development and satellite missions’ evolutions are described in a fourth section. A fifth section covers the key observations that altimeters provide and their potential complements, from other Earth observation measurements to in situ data. Section 6 identifies the data and methods and provides some accuracy and resolution requirements for the wet tropospheric correction, the orbit and other geodetic requirements, the Mean Sea Surface, Geoid and Mean Dynamic Topography, Calibration and Validation, data accuracy, data access and handling (including the DUACS system). Section 7 brings a transversal view on scales, integration, artificial intelligence, and capacity building (education and training). Section 8 reviews the programmatic issues followed by a conclusion.

Saleh Abdalla↗