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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2

Effects Of Dose Rates On Radiation Damage In CMOS Parts

Report describes measurements of effects of ionizing-radiation dose rate on consequent damage to complementary metal oxide/semiconductor (CMOS) electronic devices. Depending on irradiation time and degree of annealing, survivability of devices in outer space, or after explosion of nuclear weapons, enhanced. Annealing involving recovery beyond pre-irradiation conditions (rebound) detrimental. Damage more severe at lower dose rates.

Goben, Charles A.↗

Temperature Dependence Of Single-Event Effects

Report describes experimental study of effects of temperature on vulnerability of integrated-circuit memories and other electronic logic devices to single-event effects - spurious bit flips or latch-up in logic state caused by impacts of energetic ions. Involved analysis of data on 14 different device types. In most cases examined, vulnerability to these effects increased or remain constant with temperature.

Coss, James R.↗

Functional decor in the International Space Station: Body orientation cues and picture perception

Subjective reports of American astronauts and their Soviet counterparts suggest that homogeneous, often symmetrical, spacecraft interiors can contribute to motion sickness during the earliest phase of a mission and can also engender boredom. Two studies investigated the functional aspects of Space Station interior aesthetics. One experiment examined differential color brightnesses as body orientation cues; the other involved a large survey of photographs and paintings that might enhance the interior aesthetics of the proposed International Space Station. Ninety male and female college students reclining on their backs in the dark were disoriented by a rotating platform and inserted under a slowly rotating disk that filled their entire visual field. The entire disk was painted the same color but one half had a brightness value that was about 69 percent higher than the other. The effects of red, blue, and yellow were examined. Subjects wearing frosted goggles opened their eyes to view the rotating, illuminated disk, which was stopped when they felt that they were right-side up. For all three colors, significant numbers of subjects said they felt right-side up when the brighter side of the disk filled their upper visual field. These results suggest that color brightness could provide Space Station crew members with body orientation cues as they move about. It was found that subjects preferred photographs and paintings with the greatest depths of field, irrespective of picture topic.

Coss, Richard G.↗

Total-dose radiation effects data for semiconductor devices (1989 supplement)

Steady state, total dose radiation test data are provided for electronic designers and other personnel using semiconductor devices in a radiation environment. The data are presented in graphic and narrative formats. Two primary radiation source types were used: Cobalt-60 gamma rays and a Dynamitron electron accelerator capable of delivering 2.5 MeV electrons at a steady rate.

Martin, Keith E.↗

The NASA Microelectronics Space Radiation Effects Program (MSREP) at the Jet Propulsion Laboratory

The primary objective of the Microelectronics Space Radiation Effects Program (MSREP) at the Jet Propulsion Laboratory (JPL) is to assist NASA in the selection of radiation hardened microelectronic parts for insertion in NASA space systems through radiation testing and research. Prior to presenting examples of the research and testing on Single Event Effects (SEE) and Total Ionizing Dose (TID) effects, the space radiation environment and radiation requirements for the CRAFT/Cassini program, a typical JPL space project, are discussed.

Barnes, C.↗

Comparison of the effects of ionizing radiation at twelve dose rates from 0.0015 to 100 rad(Si)/s

Evidence is presented that two competing failure mechanisms exist in the Si-SiO2 system, with one mechanism dominating at low dose rates and the other at high. Much lower dose failures than expected were discovered at low dose rates (less than 0.1 rad(Si)/s) and very low dose rates (about 0.001 rad(Si)/s) in commercial SGS 4007 CMOS devices. These failure doses plotted versus dose rate have a bell-shaped curve, rather than the expected straight line (decreasing with increasing dose rate), indicating that a different failure mechanism is dominant at low dose rates than at high.

Goben, C. A.↗

An observation of proton-induced latchup

Proton-induced latchup in a CMOS microprocessor known to have a very low heavy-ion-induced latchup threshold LET was observed. The latchup cross section vs. proton energy for three different bias conditions is displayed. Average measures of latchup current within an 11-ms window following the onset of latchup are provided, as a function of bias and incident proton energy. These data can be interpreted in terms of the present understanding of SEE phenomena.

Nichols, Donald K.↗

Single event effects and laser simulation studies

The single event upset (SEU) linear energy transfer threshold (LETTH) of radiation hardened 64K Static Random Access Memories (SRAM's) was measured with a picosecond pulsed dye laser system. These results were compared with standard heavy ion accelerator (Brookhaven National Laboratory (BNL)) measurements of the same SRAM's. With heavy ions, the LETTH of the Honeywell HC6364 was 27 MeV-sq cm/mg at 125 C compared with a value of 24 MeV-sq cm/mg obtained with the laser. In the case of the second type of 64K SRAM, the IBM640lCRH no upsets were observed at 125 C with the highest LET ions used at BNL. In contrast, the pulsed dye laser tests indicated a value of 90 MeV-sq cm/mg at room temperature for the SEU-hardened IBM SRAM. No latchups or multiple SEU's were observed on any of the SRAM's even under worst case conditions. The results of this study suggest that the laser can be used as an inexpensive laboratory SEU prescreen tool in certain cases.

Kim, Q.↗

Determination Of LETs Of SRAMs By Use Of A Laser

Report describes experimental study of use of microelectronic advanced laser scanner (MEALS) to cause single-event upsets (SEUs) in integrated logic circuits. Basic concepts of SEU testing by use of MEALS described in "Laser Scanner Tests for Single-Event Upsets" (NPO-18216), "Single-Event-Upset Laser Scanner With Optical Bias" (NPO-18217), and "More About Laser Scanner Tests for Single-Event Upsets" (NPO-18494). Study part of continuing effort to study SEU effects of ionizing radiation on such circuits and to use MEALS as relatively inexpensive SEU-prescreening laboratory apparatus serving as alternative to heavy-ion acclerator.

Kim, Quiesup↗

Compiled Data On Single-Event Effects Caused By Heavy Ions

Report presents test data on susceptibility of new set of digital integrated circuits and other semiconductor products to single-event effects (soft errors and latchups) caused by heavy ions incident at high energies. Data used to develop generalizations for protecting electronic equipment from single-event effects. In some cases, tested parts selected as candidates for use in specific applications.

Nichols, Donald K.↗

Device SEE Susceptibility Update: 1996-1998

This eighth Compendium continues the previous work of Nichols, et al, on single event effects (SEE) first published in 1985. Because the compendium has grown so voluminous, this update only presents data not publised in previous compendia.

Coss, J. R.↗

Overview of Device SEE Susceptibility from Heavy Ions

A fifth set of heavy ion single event effects (SEE) test data have been collected since the last IEEE publications (1,2,3,4) in December issues for 1985, 1987, 1989, and 1991. Trends in SEE susceptibility (including soft errors and latchup) for state-of-the-art parts are evaluated.

Nichols, D. K.↗

Heavy Ion and Proton Induced Single Event Transients in Linear Devices

This paper presents a display of heavy-ion and proton-induced single event transients for selected linear devices. The transient vital signs are serious; low LET threshold, high voltage amplitude and extended pulse duration (microsecs.).

heavy ions ions transients linear devices LET thre↗

Trends in Device SEE Susceptibility from Heavy Ions

The sixth set of heavy ion single event effects (SEE) test data have been collected since the last IEEE publications in December issues of IEEE - Nuclear Science Transactions for 1985, 1987, 1989, 1991, and the IEEE Workshop Record, 1993. Trends in SEE susceptibility (including soft errors and latchup) for state-of- are evaluated.

single event effects latchup radiation hardening↗

Observations of Single Event Failure in Power MOSFETS

The first compendium of single event test data for power MOSFETs provides failure thresholds from burnout or gate rupture for over 100 devices of eight manufacturers. Ordering the data has also provided some useful insights.

bipolar power transistors single event test burnou↗