Indirect exchange interaction in the rare-earth metals.
Exact calculation of indirect exchange interaction isotropic and nonisotropic terms in rare earth metals, with free electron model for conduction band
CONDUCTION BAND↗
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The thermopower in the temperature range T(sub c)-1000K and the bank spectrum of Bi-based superconductors
The temperature dependencies of thermopower, S, in the range T = T(sub c)-1000K as well as of resistivity and Hall coefficient in the range T = T(sub c)-300K for the single-phase ceramic samples Bi2Sr2Ca(1-x)Nd(x)Cu2O(y) have been measured. It was found that the S(T) dependencies in normal phase have three characteristic regions. Despite the fact that the S(T) dependencies in Bi-based high-T(sub c) superconductors (HTSC) differ essentially from ones in Y-based HTSC at T = T(sub c)-300K, the main feature of theirs (S(T) = const at high temperatures) retains in samples investigated at T is greater than 620K. The results obtained have been analyzed on the basis of the narrow-band model with the use of assumption of slight asymmetry of the conductive band. The band spectrum parameters of the samples studied have been calculated. An analysis of the tendencies in these parameters changes with samples composition varying enables to make the conclusion about the similarity of the main features of the conductive band structure in Y- and Bi-based HTSC.
Gasumyants, V. E.↗
Origin of the Large Bandgap Bowing in Highly Mismatched Semiconductor Alloys
We use a combination of optical and soft x-ray fluorescence techniques to investigate the composition dependence of the band edge energies in ZnSe(1-x)Te(x) and ZnS(1-x)Te(x) alloys. The results reveal entirely different origins of the large bandgap bowing for alloys with small and large Te content. On the Te-rich side, the reduction of the bandgap is well explained by the band anticrossing interaction between the Se or S localized states and the ZnTe conduction band states. On the Se or S-rich side, an interaction between the localized Te states and the degenerate GAMMA valence bands of ZnSe or ZnS is responsible for the bandgap reduction and the rapid increase of the spin-orbit splitting with increasing Te concentration. Results of soft x-ray fluorescence experiments provide direct evidence for the valence band anticrossing interaction. The bandgap bowing over the entire composition range is accounted for by a linear interpolation between the conduction band anticrossing and valence band anticrossing models.
Wu, J.↗
Quantum Well Infrared Photodetector (QWIP) Focal Plane Arrays
Intrinsic infrared detectors in the long-wavelength range (6 - 20 ??are based on interband transition which promotes an electron across the band gap (E(sub g)) from the valence band to the conduction band.
IR QWIP Focal Plane Arrays Quantum Wells Infrared↗
Observation of deep levels in cubic silicon carbide
A deep level transient spectroscopy (DLTS) study on n-type epitaxial cubic silicon carbide grown on Si substrates has been performed. The results of this study indicate the presence of at least two majority-carrier traps. One trap is located 0.34 eV from the conduction-band edge; and the other trap is located 0.68 eV from the conduction-band edge. These two traps have concentrations of approximately 1 x 10 the 15th/cu cm. The DLTS spectrum has been investigated as a function of the surface treatment of the SiC. The results of this investigation indicate that one of the levels (SCE2) appears to be formed as a result of high temperature thermal oxidation.
Zhou, Peizhen↗
Electron trapping in neutron-irradiated silicon studied by space-charge-limited current.
The trapping and detrapping of electrons is studied through measurements of space-charge-limited current in the temperature range of 77 to 293 K in high-purity silicon after irradiation with 14-MeV neutrons. A model is developed which describes most of the results quantitatively and self-consistently, including dc characteristics. Two distinct trap levels exist: the fast levels lie at 0.14 (plus or minus 0.005) eV below the conduction band, and the slow levels lie at 0.47 (plus or minus 0.01) eV below the conduction band. At 77 K, injected free electrons are initially captured by the fast 0.14-eV traps and then sink into the deep 0.47-eV traps, predominantly without being reemitted into the band. Above approximately 110 K, the detrapping rate from the shallow traps becomes so fast that the deep traps dominate. The results also offer a direct verification of the simple model of space-charge-limited current dominated by shallow and deep traps.
Quat, V. T.↗
Tunneling through thin MOS structures - Dependence on energy /E-kappa/
The tunneling characteristics of Cr/SiO2/Si structures in the thickness range from 23 to 34 A are reported. The E-kappa dependence in the energy range extending 3.5 eV below the oxide conduction band is determined by the thickness dependence to be approximately of the Franz form with an effective mass ratio of 0.42. Tunneling into the indirect conduction band of silicon is reduced by a thickness-independent factor which decreases approximately exponentially with the energy below the direct band edge.
Maserjian, J.↗
Numerical study of the wave-vector dependence of the electron interband impact ionization rate in bulk GaAs
Ensemble Monte Carlo calculations of the electron interband impact ionization rate in bulk GaAs are presented using a wave-vector (k)-dependent formulation of the ionization transition rate. The transition rate is evaluated through the use of numerically generated wavefunctions determined via a k-p calculation within the first two conduction bands at numerous points within a finely spaced three-dimensional grid in k space. The transition rate is determined to be greatest for states within the second conduction band. Is is found that the interband impact ionization transition rate in bulk GaAs is best characterized as having an exceedingly soft threshold energy. As a consequence, the dead space, defined as the distance over which the ionization probability for a given carrier is assumed to be zero, is estimated to be much larger than that estimated using a harder threshold. These results have importance in the design of the multiquantum-well avalanche photodiodes.
Wang, Yang↗
Ballistic-Electron-Emission-Microscopy of Strained Si(sub 1-x)Ge(sub x) Layers
Ballistic-electron-emission microscopy (BEEM) has been used to investigate the effects of strain on Si(sub 1-x)Ge(sub x) alloys. Lifting of the degeneracy of the conduction-band minimum of Si(sub 1-x)Ge(sub x), due to lattice deformation has been directly measured by application of BEEM spectroscopy to Ag/Si structures. Experimental values for this conduction-band splitting agree well with calculations. In addition, an unexpected heterogeneity in the strain of the Si(sub 1-x)Ge(sub x) layer is introduced by deposition of Au. This effect, not observed with Ag, is attributed to species interdiffusion and has important implications for metal-semiconductor devices based oil pseudomorphic Si(sub 1-x)Ge(sub x)/Si material systems.
Bell, L. D.↗
Measurements of Local Strain Variation in Si(1-x)Ge(x)/Si Heterostructures
The energy splitting of the conduction-band minimum of Si(1-x), Ge(x), due to strain has been directly measured by the application of ballistic-electron-emission microscope (BEEM) spectroscopy to Ag/Si(1-x), Ge(x) structures. Experimental values for this conduction-band splitting agree well with calculations. For Au/Si(1-x), Ge(x), however, heterogeneity in the strain of the Si(1-x), Ge(x) layer is introduced by deposition of the Au. This variation is attributed to species interdiffusion, which produces a rough Si(1-x)Ge(x) surface. Preliminary modeling indicates that the observed roughness is consistent with the strain variation measured by BEEM.
Bell, L. D.↗
Enhanced indirect optical absorption in AlAs and GaP.
Measurement and analysis of indirect interband optical absorption in GaP. Deviations from a simple indirect absorption law are shown to be consistent with those given by a model which takes into account both the variation of the energy denominators with photon energy and indirect absorption to higher-energy conduction-band valleys. The analysis of the GaP data indicates that such an analysis on data of limited absorption-constant range can provide reasonably accurate values of the direct band gap. The value of the direct band gap best fitting this model for AlAs at 6 K is 3.13 eV. In GaP and AlAs there is evidence of a higher set of extrema giving rise to an additional indirect absorption component 0.34 and 0.20 eV, respectively, above that due to the lowest-energy conduction-band minima. The strength of the absorption due to these higher-energy valleys indicates that they contain states of X sub 3 symmetry.
Dumke, W. P.↗
Electroactive ZnO: Mechanisms, Conductivity, and Advances in Zn Alkaline Battery Cycling
Zinc oxide is of great interest for advanced energy devices because of its low cost, wide direct bandgap, non-toxicity, and facile electrochemistry. In zinc alkaline batteries, ZnO plays a critical role in electrode passivation, a process that hinders commercialization and remains poorly understood. Here, novel observations of an electroactive type of ZnO formed in Zn-metal alkaline electrodes are disclosed. The electrical conductivity of battery-formed ZnO is measured and found to vary by factors of up to 104, which provides a first-principles-based understanding of Zn passivation in industrial alkaline batteries. Simultaneous with this conductivity change, protons are inserted into the crystal structure and electrons are inserted into the conduction band in quantities up to ≈1020 cm−3 and ≈1 mAh gZnO−1. Electron insertion causes blue electrochromic coloration with efficiencies and rates competitive with leading electrochromic materials. The electroactivity of ZnO is evidently enabled by rapid crystal growth, which forms defects that complex with inserted cations, charge-balanced by the increase of conduction band electrons. This property distinguishes electroactive ZnO from inactive classical ZnO. Knowledge of this phenomenon is applied to improve cycling performance of industrial-design electrodes at 50% zinc utilization and the authors propose other uses for ZnO such as electrochromic devices.
Brendan E. Hawkins↗
Electron Beam Induced Luminescence of SiO2 Optical Coatings
Optical coatings of disordered thin film SiO,/SiO, samples undergoing electron beam bombardment exhibited a cathodoluminescence effect. Measurements were made of the absolute illuminance and emission spectra as functions of incident electron energy (0.2 keV to 30 keV). flux (approx. 0.1 nA/sq cm to > 100 nA/sq cm) and power (<50 nW/sq cm to > 3mW/sq cm) for coatings (approx.60 nm to approx.200 nm thick) on reflective metal substrates over a range of sample temperatures (approx.40 K to approx.400 K) and emission wavelengths (approx.260 nm to approx.5000 nm). Illuminance reached a plateau saturation intensity I(sub sat) approx. 10(exp -4)W/sq cm. scaling as [I(sub mc)/(I + I(sub mc)/I(sub sat)] as incident power I(sub mc) approached I(sub sat). Well below I(sub sat), illuminance scaled linearly with incident power for lower-energy non-penetrating radiation that deposited all of its energy in the dielectric film. At higher incident energies (> 1-5 keV) electrons penetrate the dielectric, depositing only a fraction of their energy in the dielectric film, where deposited energy scales as the ratio of film thickness to penetration range. Since electron range exhibits a peak below approx. 1 keV, the illuminance decreased with increasing energy for penetrating radiation. The temperature dependence of the illuminance. in general, increased with decreasing temperature. Changes in apparent color with temperature were also observed. Four bands in the UV/VIS/NIR range from 300 nm to 1000 nm were observed in spectral measurements; no significant luminescence was detected in a range from approx. 1000 nm to approx. 5000 nm. These different bands either increased or decreased in intensity and shifted slightly in energy with decreasing temperature. Our measurements are explained in terms of simple disordered band theory models based on atomic-scale stochastic transport of electrons in highly disordered insulating materials. The theoretical models provide a fundamental basis for understanding the dependence of cathodoluminescence on irradiation time, incident flux and energy. and sample thickness and temperature. The observed luminescence occurs when an incident high energy electron excites a valence band electron into the conduction band. Following the excitation. a complex series of transitions take place between the extended conduction states and the long-lived localized trapped states (or chromophores) associated with structural or compositional defects in the dielectric materials. Thc transport equations and models of thc spatial and energy distribution of the trapped states below the mobility edge, their occupancy, and transitions provide microscopic scale insights into this macroscopic phenomenon. Our observations and theoretical models are also compared with similar previous room temperature studies of similar SiO2 films.
Dennison, J. R.↗
A new technique to study transient conductivity under pulsed monochromatic light in Cr-doped GaAs using acoustoelectric voltage measurement
The transient conductivity of high-resistivity Bridgman-grown Cr-doped GaAs under pulsed monochromatic light is monitored using transverse acoustoelectric voltage (TAV) at 83 K. Keeping the photon flux constant, the height and transient time constant at the TAV are used to calculate the energy dependence of the trap density and its cross section, respectively. Two prominent trap profiles with peak trap densities of approximately 10 to the 17th/cu cm eV near the valence and the conduction bands are detected. These traps have very small capture cross sections in the range of 10 to the -23 to 10 to the -21st cm sq. A phenomenon similar to the persistent photoconductivity with transient time constants in excess of a few seconds in high-resistivity GaAs at T = 83 K is also detected using this technique. These long relaxation times are readily explained by the spatial separation of the photo-excited electron-hole pairs and the small capture cross section and large density of trap distribution near the conduction band.
Tabib-Azar, Massood↗
GaAs-oxide interface states - Gigantic photoionization via Auger-like process
Spectral and transient responses of photostimulated current in MOS structures were employed for the study of GaAs-anodic oxide interface states. Discrete deep traps at 0.7 and 0.85 eV below the conduction band were found with concentrations of 5 x 10 to the 12th/sq cm and 7 x 10 to the 11th/sq cm, respectively. These traps coincide with interface states induced on clean GaAs surfaces by oxygen and/or metal adatoms (submonolayer coverage). In contrast to surfaces with low oxygen coverage, the GaAs-thick oxide interfaces exhibited a high density (about 10 to the 14th/sq cm) of shallow donors and acceptors. Photoexcitation of these donor-acceptor pairs led to a gigantic photoionization of deep interface states with rates 1000 times greater than direct transitions into the conduction band. The gigantic photoionization is explained on the basis of energy transfer from excited donor-acceptor pairs to deep states.
Lagowski, J.↗
Electrical characterization of plasma-grown oxides on gallium arsenide
Plasma-grown GaAs oxides and their interfaces have been characterized by measuring the electrical properties of metal-oxide-semiconductor capacitors and of Schottky junctions. The current transport mechanism in the oxide at high electrical field was found to be Frankel-Poole emission, with an electron trap center at 0.47 eV below the conduction band of the oxide. The interface-state density, evaluated from capacitance and conductance measurements, exhibits a U-shaped interface-state continuum extending over the entire band gap. Two discrete deep states with high concentration are superimposed on this continuum at 0.40 and 0.70 eV below the conduction band. The results obtained from measurements on Schottky junctions have excluded the possibility that these two deep states originate from plasma damage. Possible origins of these states are discussed in this paper.
Hshieh, F. I.↗
The determination of minority carrier lifetimes in direct band-gap semiconductors by monitoring intensity-modulated luminescence radiation
When an extrinsic, direct band-gap semiconductor sample is irradiated by photons of an energy higher than the energy of the band gap between valence and conduction bands, excess electron-hole pairs are generated which, while diffusing through the sample, produce luminescence via radiative recombination. If, furthermore, the intensity of the impinging beam of photons is modulated sinusoidally, the luminescence radiation escaping from the sample will be phase shifted with respect to the original photon beam in a characteristic way. It will be shown that by measuring the phase shift at different modulation frequencies, the Shockley-Read-Hall lifetime of minority carriers may be ascertained. The method is nondestructive inasmuch as there is no need to fabricate p-n junctions or Ohmic contacts, nor is it necessary to remove already existing Ohmic contacts of angle lap the surface, etc., procedures often needed when determining lifetimes with the scanning electron microscope (in which case a p-n junction must be present).
Von Roos, O.↗
Report of the direct infrared sensors panel
The direct infrared sensors panel considered a wide range of options for technologies relevant to the science goals of the Astrotech 21 mission set. Among the technologies assessed are: large format arrays; photon counting detectors; higher temperature 1 to 10 micro-m arrays; impurity band conduction (IBC) or blocked impurity band (BIB) detectors; readout electronics; and adapting the Space Infrared Telescope Facility and Hubble Space Telescope. Detailed development plans were presented for each of these technology areas.
Mccreight, Craig↗