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Low Power Camera-on-a-Chip Using CMOS Active Pixel Sensor Technology
A second generation image sensor technology has been developed at the NASA Jet Propulsion Laboratory as a result of the continuing need to miniaturize space science imaging instruments. Implemented using standard CMOS, the active pixel sensor (APS) technology permits the integration of the detector array with on-chip timing, control and signal chain electronics, including analog-to-digital conversion.
Low Power Camera-on-a-Chip Using CMOS Active Pixel Sensor Technology
A second generation image sensor technology has been developed at the NASA Jet Propulsion Laboratory as a result of the continuing need to miniaturize space science imaging instruments. Implemented using standard CMOS, the active pixel sensor (APS) technology permits the integration of the detector array with on-chip timing, control and signal chain electronics, including analog-to-digital conversion.
CMOS Pixel Development for the ATLAS Experiment at HL-LHC. In: Proceedings of International Conference on Technology and Instrumentation in Particle Physics 2017
The high luminosity upgrade of the LHC necessitates a complete exchange of the current ATLAS Inner Tracker for a purely silicon one. Large areas therefore have to be covered by radiation tolerant, low cost and low material budget silicon detectors. New approaches are being explored using CMOS pixel sensors, providing charge collection in a depleted layer. They are based on technologies that allow to use high depletion voltages and high resistivity wafers for large depletion depths with multiple nested wells, enabling for CMOS electronics to be embedded safely into the sensor substrate. We are investigating depleted CMOS pixel detectors with monolithic or hybrid designs in view of their suitability for high trigger rates, fast timing and the high radiation environment at HL-LHC. This paper will discuss recent results of the main candidate technologies and the current developments towards a monolithic solution.
Advances in second generation ultra-low power CMOS active pixel sensor imagers for remote sensing, star tracking, optical comm and low cost solar array/antenna boom deployment metrology
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Design of ePixM, a fully-depleted monolithic CMOS active pixel sensor for soft X-ray experiments at LCLS-II
The LCLS-II Free Electron Laser (FEL) will produce X-ray pulses with a repetition rate of up to 1 MHz and energies between 250 eV and 5 keV. Experiments conducted at LCLS-II will require 2D imaging detectors with a unique set of features, such as high-spatial resolution, low-noise performance, high-dynamic range and high-frame rates up to 1 MHz. We present the design of ePixM, a fully-depleted monolithic CMOS detector tailored for soft X-rays applications at high-repetition rates FEL. It consists of an array of 384×192 active pixel sensors, with a pixel size of 50×50 μm 2 and a total sensitive area of 2×1 cm 2 . ePixM has been designed in a 150 nm CMOS technology on high-resistivity substrate to achieve full depletion of the substrate. Each pixel includes a Charge Sensitive Amplifier (CSA) with gain auto-ranging capability and a noise-shaper performing Correlated Double Sampling (CDS). A novel technique named correlated pre-charging removes the excess noise introduced by the gain-switching mechanism. The performance of the design has been evaluated through post-layout simulations. The Equivalent Noise Charge (ENC) of 11.3 electrons enables single-photon detection at X-ray energies down to 250 eV, and the dynamic range exceeds 10 3 photons at 500 eV thanks to the auto-ranging circuitry.
Progress in CMOS Active Pixel Image Sensors
Recent research results regarding the investigation of CMOS active pixel image sensors (APS) are reported. An investigation of various designs for the pixel, including photogate devices of various geometries and photodiode devices has been performed. Opto-electronic performance including intra-pixel photoresponse maps taken using a focused laser scanning apparatus are presented. Several imaging arrays have also been investigated. A 128 x 128 image sensor has been fabricated and characterized. Both p-well and n-well implementations have been explored. The demonstrated arrays use 2 micron CMOS design rules and have a 40 x 40 micron pixel pitch.
Fully Depleted CMOS Active Pixel Sensor on High Resistivity Silicon for Tracking of Minimum Ionizing Particles in High Energy Physics Experiments
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CMOS Active Pixel Sensor Star Tracker with Regional Electronic Shutter
The guidance system in a spacecraft determines spacecraft attitude by matching an observed star field to a star catalog....An APS(active pixel sensor)-based system can reduce mass and power consumption and radiation effects compared to a CCD(charge-coupled device)-based system...This paper reports an APS (active pixel sensor) with locally variable times, achieved through individual pixel reset (IPR).
CMOS active pixel sensor type imaging system on a chip
Single substrate device is formed to have an image acquistition device and a controller. The controller on the substrate controls the system operation.
CMOS active pixel sensor type imaging system on a chip
A single chip camera which includes an .[.intergrated.]. .Iadd.integrated .Iaddend.image acquisition portion and control portion and which has double sampling/noise reduction capabilities thereon. Part of the .[.intergrated.]. .Iadd.integrated .Iaddend.structure reduces the noise that is picked up during imaging.
Camera-on-a-Chip
Jet Propulsion Laboratory's research on a second generation, solid-state image sensor technology has resulted in the Complementary Metal- Oxide Semiconductor Active Pixel Sensor (CMOS), establishing an alternative to the Charged Coupled Device (CCD). Photobit Corporation, the leading supplier of CMOS image sensors, has commercialized two products of their own based on this technology: the PB-100 and PB-300. These devices are cameras on a chip, combining all camera functions. CMOS "active-pixel" digital image sensors offer several advantages over CCDs, a technology used in video and still-camera applications for 30 years. The CMOS sensors draw less energy, they use the same manufacturing platform as most microprocessors and memory chips, and they allow on-chip programming of frame size, exposure, and other parameters.
A data acquisition system for HV-CMOS sensor research and development in the upgrade of ATLAS experiment
In the High Luminosity LHC (HL-LHC) upgrade of ATLAS experiment in 2026, the new inner tracker detector will be installed. As a promising candidate for the outer layer of the inner tracker detector, the High Voltage CMOS (HV-CMOS) pixel sensors are being investigated by the ATLAS collaboration. A Front-End LInk eXchange (FELIX) based Data Acquisition (DAQ) system is developed for the R&D of the HV-CMOS sensors. A FELIX card with PCIe interface in the back-end is used to control, monitor, calibrate and read out the front-end electronics. In the front-end, a Xilinx evaluation board ZC706 works as the interface between the back- end and custom boards with HV-CMOS sensors and the readout ASIC. In conclusion, the DAQ system was successfully deployed for the testbeam experiment at CERN. Design of the DAQ system, the tuning of sensors and testbeam results will be described in details.
Development of CMOS Active Pixel Image Sensors for Low Cost Commercial Applications
This paper describes ongoing research and development of CMOS active pixel image sensors for low cost commercial applications. A number of sensor designs have been fabricated and tested in both p-well and n-well technologies. Major elements in the development of the sensor include on-chip analog signal processing circuits for the reduction of fixed pattern noise, on-chip timing and control circuits and on-chip analog-to-digital conversion (ADC). Recent results and continuing efforts in these areas will be presented.
CMOS Active Pixel Image Sensors for Highly Integrated Imaging Systems
A family of CMOS-based active pixel image sensors (APS) that are inherently compatible with the integration of on-chip signal processing circuitry is reported.
Development of CMOS Active Pixel Image Sensors for Low Cost Commercial Applications
JPL, under sponsorship from the NASA Office of Advanced Concepts and Technology, has been developing a second-generation solid-state image sensor technology. Charge-coupled devices (CCD) are a well-established first generation image sensor technology. For both commercial and NASA applications, CCDs have numerous shortcomings. In response, the active pixel sensor (APS) technology has been under research. The major advantages of APS technology are the ability to integrate on-chip timing, control, signal-processing and analog-to-digital converter functions, reduced sensitivity to radiation effects, low power operation, and random access readout.
Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation
This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital.