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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Thermally Activated Adsorption in Metal–Organic Frameworks with a Temperature‐Tunable Diffusion Barrier Layer

Abstract Modification of the external surfaces of metal–organic frameworks offers a new level of control over their adsorption behavior. It was previously shown that capping of MOFs with ethylenediamine (EDA) can effectively retain small gaseous molecules at room temperature. Reported here is a temperature‐induced variation in the capping‐layer gate‐opening mechanism through a combination of in situ infared experiments and ab initio simulations of the capping layer. An atypical acceleration and increase in the loading of weakly adsorbed molecules upon raising the temperature above room temperature is observed. These findings show the discovery of novel temperature‐dependent kinetics that goes beyond standard kinetics and suggest a new avenue for tailoring selective adsorption by thermally tuning the surface barrier.

Tan, Kui↗
DOE OSTI2020

Thermally activated adsorption in metal–organic frameworks with a temperature–tunable diffusion barrier layer

Modification of the external surfaces of metal organic frameworks offers a new level of control over their adsorption behavior. Here, we have previously shown that capping of MOFs with ethylenediamine (EDA) can effectively retain small gaseous molecules at room temperature. Here, we report a temperature–induced variation in the capping–layer gate opening mechanism through a combination of in situ IR experiments and ab initio simulations of the capping layer. We find an atypical acceleration and increase in the loading of weakly adsorbed molecules upon raising the temperature above room temperature. Our findings show the discovery of a novel temperature–dependent kinetics that goes beyond standard kinetics and suggest a new avenue for tailoring selective adsorption by thermally tuning the surface barrier.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Metal oxide barrier layers for terrestrial and space perovskite photovoltaics

Perovskite photovoltaics are attractive for both terrestrial and space applications. Although terrestrial conditions require durability against stressors such as moisture and partial shading, space poses different challenges: radiation, atomic oxygen, vacuum and high-temperature operation. Here we demonstrate a silicon oxide layer that hardens perovskite photovoltaics to critical space stressors. A 1-um-thick silicon oxide layer evaporated atop the device contacts blocks 0.05 MeV protons at fluences of 10 15 cm -2 without a loss in power conversion efficiency, which results in a device lifetime increase in low Earth orbit by x20 and in highly elliptical orbit by x30. Silicon-oxide-protected Cs 0.05 (MA 0.17 FA 0.83 ) 0.95 Pb(I 0.83 Br 0.17 ) 3 ) (MA, methylammonium; FA, formamidinium cation) and CsPbI 2 Br cells survive submergence in water and N,N-dimethylformamide. Furthermore, moisture tolerance of Sn-Pb and CsPbI 2 Br devices is boosted. Devices are also found to retain power conversion efficiencies on exposure to alpha irradiation and atomic oxygen. So, this barrier technology is a step towards lightweight packaging designs for both space and terrestrial applications.

14 SOLAR ENERGY↗
DOE OSTI2020

Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices

Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer “second layer” disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 μΩ·cm2.

Jie, Qing↗
DOE OSTI2021

Storing molecule within porous materials with a surface molecular barrier layer

In some aspects, the present disclosure provides compositions comprising a nanoporous material such as a metal organic framework and an amine containing compound. In some aspects, these compositions may be used to improve the affinity of a guest molecule to the nanoporous material relative a nanoporous material which had not been treated with the amine containing compound.

Tan, Kui↗
DOE OSTI2022

Friction Stir Processed Repair Welding of Dry Storage Canisters and Mitigation Strategies: Effect of Engineered Barrier Layer on Environmental Degradation

The proposed project aims to develop a friction sir based repair technique to heal cracks of stainless steel dry storage canisters (DSCs), created by the effect of stress corrosion cracking (SCC). In real service conditions, the welded parts of the canisters become prone to SCC under exposure to aggressive chemical environment. The focus of the project is on developing a mitigation strategy that can be implemented for countering SCC in DSCs following a two-pronged approach: (i) apply friction stir processing (FSP) as a crack repair technique while creating compressive residual stresses at the canister material surface, thus improving resistance against SCC; (ii) add molybdenum and/or nitrogen by friction stir based alloying process to create compositions that improve pitting resistance and thus enhance resistance against SCC. The specific project objectives are listed below: • Investigate FSW of 304L SS a potential repair welding technique of dry storage canisters; • Optimize the FSW parameters to introduce surface compressive stress profiles in the weldments; • Develop a FSP method to surface alloy the 304L with nitrogen and Mo by adding CrN and Mo powders; • Evaluate the surface compressive residual stress profile during FSW and FSP processes; • Evaluate the localized corrosion resistance of the FSW and FSP samples as a function of temperature, chloride concentration, and surface alloy composition; • Evaluate the SCC behavior of the FSW and FSP samples as a function of stress, chloride concentration, and temperature at different surface chemistries and induced residual stress profiles.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2022

Chapter 3: Ultrathin Oxides for Solar Cells

This chapter discusses the many uses of ultrathin oxide layers across a broad range of photovoltaic (PV) technologies. The chapter is broken down into six sections, working from the solar absorber outwards: passivation layers, selective contact/buffer layers, recombination layers, barrier layers, anti-reflective coatings, and anti-soiling layers. The goal is to introduce the layer function, outline the scientific mechanisms behind each function, and provide illustrative examples from academic literature and industry. One theme in this chapter is the multifunctionality of oxide layers in the PV device stack, that is, a single layer rarely has only one purpose and therefore certain ideas will build upon other sections. The chapter covers a wide range of material and the discussions and examples are by no means exhaustive. The best efforts have been made to capture the central concepts for each topic and direct the reader to additional resources that have been found by the authors to be useful and relevant.

anti-reflection coatings↗
DOE OSTI2025

Selective Isolation of Surface Grain Boundaries by Oxide Dielectrics Improves Cd(Se,Te) Device Performance

Cd(Se,Te) photovoltaics (PV) are the most widely deployed thin-film solar technology globally, yet continued efficiency improvements are stymied by challenges at the device hole contacts. The inclusion of solution-processed oxide layers such as AlGaO x in the contact stack has yielded improved device open-circuit voltages (V OC ) and fill factors (FF). However, contradictory mechanisms by which these layers improve the device properties have been proposed by the research community. We demonstrate in this work that an underappreciated property of such spin-coated layers is the preferential deposition at grain boundaries, a process that isolates the grain boundaries during contact metallization. The effects of grain-boundary isolation are probed by varying the coverage of solution-processed AlGaO x “barrier” layers on the Cd(Se,Te) surface, quantified by scanning Auger microscopy. Examining coverage-dependent V OC and FF, it was observed that isolating the grain boundaries during metallization is sufficient to prevent damage to the absorber that occurs in devices lacking a barrier layer, while additional coverage contributes to the increased series resistance. Such an effect is agnostic to the material used as a barrier layer, as long as the material does not itself damage the absorber. Spin-coated SiO x was used in place of AlGaO x for an equally beneficial effect. This grain-boundary isolation phenomenon is also observed during Mo deposition and in absorbers that have been contacted with a nitrogen-doped ZnTe layer. The mechanisms by which metallization may degrade the absorber are discussed, as are contact design strategies leveraging barrier layers, which may lead to improved device efficiencies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Diamond based current aperture vertical transistor and methods of making and using the same

A semiconductor structure, device, or vertical field effect transistor is comprised of a drain, a drift layer disposed in a first direction relative to the drain and in electronic communication with the drain, a barrier layer disposed in the first direction relative to the drift layer and in electronic communication with the drain, the barrier layer comprising a current blocking layer and an aperture region, a two-dimensional hole gas-containing layer disposed in the first direction relative to the barrier layer, a gate electrode oriented to alter an energy level of the aperture region when a gate voltage is applied to the gate electrode, and a source in ohmic contact with the two-dimensional hole gas-containing layer. At least one of an additional layer, the drain, the drift region, the current blocking layer, the two-dimensional hole gas-containing layer, and the aperture region comprises diamond.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Spectra of Double Acceptors in Layers of Barriers and Quantum Wells of HgTe/CdHgTe Heterostructures

The states of double acceptors in HgTe/СdHgTe heterostructures containing quantum wells are theoretically investigated taking into account the substantial difference in the values of the permittivities of the barrier and quantum-well layers. The effect of such a difference and the charge induced at the heterointerfaces arising from it are described with the image-charge potential. Calculation shows a significant change in the binding energy of the acceptor centers—mercury vacancies due to the induced charge; the ionization energies of mercury vacancies are in good agreement with the position of the spectral features in the photoluminescence spectrum of the HgTe/CdHgTe heterostructures containing quantum wells.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

SPUTTERED THIN FILMS FOR VERY HIGH POWER, EFFICIENT, AND LOW-COST COMMERCIAL SOFCS

The aim of this project was to leverage the low area specific resistance (ASR) of Redox’s GDC electrolyte-based cell architecture and increase solid oxide fuel cell (SOFC) efficiency (i.e., open circuit voltage, or OCV) without significantly increasing cell resistance. The key to achieving the increased SOFC efficiency is the introduction of a thin sputtered yttria stabilized zirconia (YSZ) electron-blocking layer and a thin sputtered gadolinia doped ceria (GDC) barrier layer on top of the half-cell substrate (i.e., anode and GDC electrolyte). A key initial effort of the project was to improve the quality of the half-cell substrate surface so that any remaining defects were significantly smaller than the desired film thickness. During lab-scale trials, we had to overcome challenges with film cracking during post-sputtering treatments (e.g., thermal anneals) as well as damage to the sputtering targets. After the initial lab-scale trials, the focus shifted toward the use of commercial scale sputtering equipment with a sputtering equipment manufacturer in the microelectronics industry. Using the commercial sputtering equipment, we deposited films with different variations of power, PO2, sputtering time, platen speed, etc. We then determined the combinations of sputtering conditions and post-sputtering treatments that yielded high-quality films without cracks or other significant defects. While thin films were deposited on cells as large as 10 cm by 10 cm, the processing was optimized using 4 cm by 4 cm cells. Cell performance was evaluated in stainless-steel test fixtures between 500 °C and 700 °C with hydrogen fuel fed to the anode and air fed to the cathode. Extensive studies allowed us to determine that modified cathode and cathode contact firing processes were required to achieve theoretical OCV. Moreover, use of the new firing processes resulted in the need for a modified cathode contact to achieve a low ASR. In summary, the project demonstrated the performance of high OCV (1.13 V at 650 °C) from sputtered layers and a low ASR (~0.25 Ohms-cm2 at 650 °C) resulting from a modification of cathode/contact processing and the introduction of alternative contact layers that are sufficient to yield a Gen-1 cell with a maximum power density of approximately 1.2 W/cm2. At an operating voltage of 0.74 V, this would yield a cell power density of ~1.1 W/cm2. While not utilized in this project, a Redox Gen-2 cell has a catalyst-infiltrated porous anode that reduces the ASR by more than 50% from that of the Gen-1 cells used in this project. Therefore, if the sputtered YSZ electron-blocking layer and GDC barrier layer are added to a Gen-2 half cell with a similar increase in OCV to the theoretical value of ~1.13 V at 650 °C, and if the same improvement in ASR (from that demonstrated in this project) is achieved when using the Gen-2 half-cell architecture as a sputtered cell substrate, then the power density at 0.74 Vop could be as high as ~2.6 W/cm2. The impact of such power density gains, while still maintaining high cell efficiency, and thus high system efficiency, is a dramatic decrease in system cost because the stack represents ~30-40% of the SOFC system cost.

01 COAL, LIGNITE, AND PEAT↗
DOE OSTI2019

Enhanced Nucleation of Atomic Layer Deposited Contacts Improves Operational Stability of Perovskite Solar Cells in Air

Metal-halide perovskites show promise as highly efficient solar cells, light-emitting diodes, and other optoelectronic devices. Ensuring long-term stability is now a major priority. In this study, an ultrathin (2 nm) layer of polyethylenimine ethoxylated (PEIE) is used to functionalize the surface of C 60 for the subsequent deposition of atomic layer deposition (ALD) SnO 2 , a commonly used electron contact bilayer for p-i-n devices. The enhanced nucleation results in a more continuous initial ALD SnO 2 layer that exhibits superior barrier properties, protecting Cs 0.25 FA 0.75 Pb(Br 0.20 | 0.80 ) 3 films upon direct exposure to high temperatures (200 degrees C) and water. This surface modification with PEIE translates to more stable solar cells under aggressive testing conditions in air at 60 degrees C under illumination. This type of 'built-in' barrier layer mitigates degradation pathways not addressed by external encapsulation, such as internal halide or metal diffusion, while maintaining high device efficiency up to 18.5%. This nucleation strategy is also extended to ALD VOx films, demonstrating its potential to be broadly applied to other metal oxide contacts and device architectures.

14 SOLAR ENERGY↗
DOE OSTI2019

Regrowth method for fabricating wide-bandgap transistors, and devices made thereby

Methods are provided for fabricating a HEMT (high-electron-mobility transistor) that involve sequential epitaxial growth of III-nitride channel and barrier layers, followed by epitaxial regrowth of further III-nitride material through a window in a mask layer. In examples, the regrowth takes place over exposed portions of the channel layer in the source and drain regions of the device, and the regrown material has a composition different from the barrier layer. In other examples, the regrowth takes place on the barrier layer, only in the access region or regions. Devices made according to the disclosed methods are also provided.

Armstrong, Andrew↗
DOE OSTI2020

Method for forming a nitrogenation barrier and machine formed using a body having the nitrogenation barrier

A method includes forming one or more oxide barrier layers on one or more protected portions of a magnetic, metallic body, and converting one or more unprotected portions of the magnetic, metallic body to a less magnetic material by exposing the magnetic metallic body having the one or more oxide barrier layers formed thereon to nitrogen. One or more protected portions of the magnetic, metallic body that are beneath the one or more oxide barrier layers are not converted to the less magnetic material. The method can be used to form one or more layers of a laminated electric motor.

36 MATERIALS SCIENCE↗