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Band structure of Bi surfaces formed on Bi 2 Se 3 upon exposure to air
Bi 2 Se 3 has been the focus of intense interest over the past decade due to its topological properties. Bi surfaces are known to form on Bi 2 Se 3 upon exposure to atmosphere, but their electronic structure has not been investigated. Here, we report band structure measurements of such Bi surfaces using angle-resolved photoemission spectroscopy. Measured spectra can be well explained by the band structure of a single bilayer of Bi on Bi 2 Se 3 , and show that Bi surfaces consistently dominate the photoemission signal for air exposure times of at least 1 hour. These results demonstrate that atmospheric effects should be taken into consideration when identifying two-dimensional transport channels, and when designing surface-sensitive measurements of Bi 2 Se 3 , ideally limiting air exposure to no more than a few minutes.
High Thermoelectric Performance in Chalcopyrite Cu 1-x Ag x GaTe 2 –ZnTe: Nontrivial Band Structure and Dynamic Doping Effect
The understanding of thermoelectric properties of ternary I–III–VI 2 type (I = Cu, Ag; III = Ga, In; and VI = Te) chalcopyrites is less well developed. Although their thermal transport properties are relatively well studied, the relationship between the electronic band structure and charge transport properties of chalcopyrites has been rarely discussed. In this study, we reveal the unusual electronic band structure and the dynamic doping effect that could underpin the promising thermoelectric properties of Cu 1–x Ag x GaTe 2 compounds. Density functional theory (DFT) calculations and electronic transport measurements suggest that the Cu 1–x Ag x GaTe 2 compounds possess an unusual non-parabolic band structure, which is important for obtaining a high Seebeck coefficient. Moreover, a mid-gap impurity level was also observed in Cu 1–x Ag x GaTe 2 , which leads to a strong temperature-dependent carrier concentration and is able to regulate the carrier density at the optimized value for a wide temperature region and thus is beneficial to obtaining the high power factor and high average ZT of Cu 1–x Ag x GaTe 2 compounds. We also demonstrate a great improvement in the thermoelectric performance of Cu 1–x Ag x GaTe 2 by introducing Cu vacancies and ZnTe alloying. The Cu vacancies are effective in increasing the hole density and the electrical conductivity, while ZnTe alloying reduces the thermal conductivity. As a result, a maximum ZT of 1.43 at 850 K and a record-high average ZT of 0.81 for the Cu 0.68 Ag 0.3 GaTe 2 –0.5%ZnTe compound are achieved.
Targeted Dy intercalation under graphene/SiC for tuning its electronic band structure
Metal intercalation of graphene is a promising method to tune its electronic band structure and generate novel electronic and topological phases. The tuning depends critically on the ability to bond the intercalated atoms at predesigned, subsurface interlayer locations because the emerging band structure depends on metal location. In this work, we have studied Dy intercalation under single-layer graphene (SLG) on SiC using spot profile analysis–low-energy electron diffraction and scanning tunneling microscopy (STM). The experimental work is complemented with density-functional theory (DFT) analysis. Because different diffraction spots originate from different subsurface interlayer regions, it is possible to identify changes in the intercalation location by monitoring the spot intensity as a function of growth conditions. DFT calculations of the chemical potential as a function of intercalated Dy coverage support the variation of the stability of the intercalated phase at different intercalated locations. The preferred location is confirmed from STM studies showing the removal of the 6 × 6 moiré corrugation at the preferred location, observed at higher Dy coverage.
Vortical effects in chiral band structures
The chiral vortical effect is a chiral anomaly-induced transport phenomenon characterized by an axial current in a uniformly rotating chiral fluid. It is well understood for Weyl fermions in high energy physics, but its realization in condensed matter band structures, including those of Weyl semimetals, has been controversial. In this work, we develop the Kubo response theory for electrons in a general band structure subject to space- and time-dependent rotation or vorticity relative to the background lattice. For continuum Hamiltonians, we recover the chiral vortical effect in the static limit and the transport or uniform limit when the fluid, strictly, is not a Fermi liquid. In the transport limit of a Fermi liquid, we describe an effect that we dub the gyrotropic vortical effect. The latter is governed by Berry curvature of the occupied bands while the former contains an additional contribution from the magnetic moment of electrons on the Fermi surface. The two vortical effects can be understood as kinematic analogs of the well-known chiral and gyrotropic magnetic effects in chiral band structures. As a result, we address recent controversies in the field and conclude by describing device geometries that exploit Ohmic or Seebeck transport to drive the vortical effects.
Substrate-Dependent Band Structures in Trilayer Graphene / h - BN Heterostructures
The tight-binding model has been spectacularly successful in elucidating the electronic and optical properties of a vast number of materials. Within the tight-binding model, the hopping parameters that determine much of the band structure are often taken as constants. Here, using ABA-stacked trilayer graphene as the model system, we show that, contrary to conventional wisdom, the hopping parameters and therefore band structures are not constants, but are systematically variable depending on their relative alignment angle between h-BN. Moreover, the addition or removal of the h-BN substrate results in an inversion of the K and K' valley in trilayer graphene’s lowest Landau level. Our work illustrates the oft-ignored and rather surprising impact of the substrates on band structures of 2D materials.
Quantum algorithm for electronic band structures with local tight-binding orbitals
While the main thrust of quantum computing research in materials science is to accurately measure the classically intractable electron correlation effects due to Coulomb repulsion, designing optimal quantum algorithms for simpler problems with well-understood solutions is a useful tactic to advance our quantum “toolbox”. With this in mind, we consider the quantum calculation of a periodic system’s single-electron band structure over a path through reciprocal space. Previous efforts have used the Variational Quantum Eigensolver algorithm to solve the energy of each band, which involves numerically optimizing the parameters of a variational quantum circuit to minimize a cost function, constructed as the expectation value of a Hamiltonian operator. Traditionally, a unique Hamiltonian operator is constructed for each k-point, so that many cost functions, each with their own parameter space, must be optimized to generate a single band. Similarly, calculating higher bands than the first has traditionally involved modifying the cost function with additional overlap terms to ensure higher-energy eigenstates are orthogonal to those of lower bands. In this paper, we adopt a direct space approach, using a novel hybrid first/second-quantized qubit mapping which allows us to construct a single Hamiltonian, and a single cost-function, suitable for solving the entire electronic band structure. In contrast to previous approaches, the k-point and the band index are selected by additional parameters in our quantum circuit, rather than through modifications to the cost function. The result is a technically and conceptually simpler approach to band structure calculations on a quantum computer. Moreover, we expect that the tools developed herein will motivate new strategies for tackling highly-correlated materials beyond the grasp of classical computing.
First observation of a high-𝐾 band structure in 162 Er and implications in the context of the identical bands phenomenon
The first ever identification of a high-𝐾 band structure in 162 Er is reported. Based on a 𝐾 𝜋 = 7 (−) isomer, it is found to be identical in nature to the corresponding 𝐾 𝜋 = 7 − sequence in 164 Er up to its highest observed spin. Furthermore, the phenomenon of identical high-K bands built on a two-quasiparticle configuration in an isotopic chain is reported here for the first time. While this is a notable addition to the systematics of known identical bands in nuclei at normal deformation, a satisfactory global understanding of the phenomenon remains elusive.
Globally Optimal Band Structure for Thermoelectrics in Realistic Systems
One of the ultimate questions in the field of thermoelectrics is the optimal band structure for the figure of merit. The observation made here is that a linear band dispersion, of any dimension, under acoustic-phonon-deformation-potential scattering comprises the theoretical regimen for delivering boxcar transport distribution, which has been mathematically proven to deliver optimum figure of merit. This is guaranteed by the interplay of the energy-dependencies of groupvelocity and density of states of linear dispersion as well as the energy-behavior of deformation-potential scattering. Then linear dispersion, capped with optimum bandwidth and combined with provisions of Park et al, npj Comput. Mater. 7, 43 2021, is the globally optimal band structure for thermoelectricity.
Optical study of the electronic band structure of diamond
Reflection, dielectric constant, and band structure measurements on diamond crystal
Band structure, superconductivity, and polytypism in AuSn 4
The orthorhombic compound AuSn 4 is compositionally similar to the Dirac node arc semimetal PtSn 4 . AuSn 4 is, contrary to PtSn 4 , superconducting with a critical temperature of T c = 2.35 K. Recent measurements present indications for quasi-two-dimensional superconducting behavior in AuSn 4 . Here we present measurements of the superconducting density of states and the band structure of AuSn 4 through scanning tunneling microscopy and angular resolved photoemission spectroscopy (ARPES). The superconducting gap values in different portions of the Fermi surface are spread around Δ 0 = 0.4 meV, which is close to but somewhat larger than Δ = 1.76k B T c expected from BCS theory. We observe superconducting features in the tunneling conductance at the surface up to temperatures about 20% larger than bulk T c . The band structure calculated with density functional theory follows well the results of ARPES. The crystal structure presents two possible stackings of Sn layers, giving two nearly degenerate polytypes. This makes AuSn 4 a rather unique case with a three-dimensional electronic band structure but properties ressembling those of low-dimensional layered compounds.
Observation of light-driven band structure via multiband high-harmonic spectroscopy
Intense light–matter interactions have revolutionized our ability to probe and manipulate quantum systems at sub-femtosecond timescales, opening routes to the all-optical control of electronic currents in solids at petahertz rates. Such control typically requires electric-field amplitudes in the range of almost volts per angstrom, when the voltage drop across a lattice site becomes comparable to the characteristic bandgap energies. In this regime, intense light–matter interaction induces notable modifications to the electronic and optical properties, dramatically modifying the crystal band structure. Yet, identifying and characterizing such modifications remain an outstanding problem. As the oscillating electric field changes within the driving field’s cycle, does the band structure follow and how can it be defined? Here we address this fundamental question, proposing all-optical spectroscopy to probe the laser-induced closing of the bandgap between adjacent conduction bands. Our work reveals the link between nonlinear light–matter interactions in strongly driven crystals and the sub-cycle modifications in their effective band structure.
Observation of interface band structure by ballistic-electron-emission microscopy
The paper reports an advanced ballistic electron spectroscopy technique that was used to directly measure semiconductor band structure properties at a subsurface interface. Two interface systems having contrasting band structures were investigated by this method: Au-Si and Au-GaAs. It is concluded that the proposed method, based on scanning tunneling microscopy, enables the spatially resolved carrier-transport spectroscopy of interfaces.
The influence of line shape and band structure on temperatures in planetary atmospheres
Numerical experiments are performed to examine the effects of line shape and band structure on the radiative equilibrium temperature profile in planetary atmospheres. In order to accurately determine these effects, a method for calculating radiative terms is developed which avoids the usual approximations. It differs from the more commonly used methods in that it allows arbitrary dependence of the absorption coefficient on wave number, without requiring tedious line by line integration and without the constraints of band models. The present formulation is restricted to homogeneous atmospheres but the concept can be extended to the more general case. The numerical experiments reveal that the line shape and band structure of the absorbing gases have a large effect on temperatures in the higher layers of the atmosphere (corresponding to the stratosphere and mesosphere). The more nongrey the spectrum (that is, the higher the peaks and the deeper the troughs in the spectrum), the lower the temperature.
Density Functional Tight-Binding Models for Band Structures of Transition-Metal Alloys and Surfaces across the d -Block
First-principles electronic structure simulations are an invaluable tool for understanding chemical bonding and reactions. While machine-learning models such as interatomic potentials significantly accelerate the exploration of potential energy surfaces, electronic structure information is generally lost. Particularly in the field of heterogeneous catalysis, simulated electron band structures provide fundamental insights into catalytic reactivity. This ab initio knowledge is preserved in semiempirical methods such as density functional tight binding (DFTB), which extend the accessible computational length and time scales beyond first-principles approaches. In this paper here we present Shell-Optimized Atomic Confinement (SOAC) DFTB electronic-part-only parametrizations for bulk and surface band structures of all d-block transition metals that enable efficient predictions of electronic descriptors for large structures or high-throughput studies on complex systems outside the computational reach of density functional theory.
High electron mobility of Al x Ga1− x N evaluated by unfolding the DFT band structure
We calculate the alloy-disorder-limited electron mobility of AlxGa1−xN from first principles. AlxGa1−xN is a technologically important ultra-wide-bandgap alloy with promise in light emitting diodes and high-power transistors. Alloying introduces statistical disorder, which causes electrons to scatter between different crystal-momentum states, leading to a reduction in mobility for intermediate alloy compositions. The corresponding lifetime, which appears as an energy broadening in the band structure, can be evaluated by unfolding the band structure from the supercell basis to the primitive-cell basis. We fit the first-principles band broadening with a model scattering potential and evaluate the low-field electron mobility using the semiclassical Boltzmann transport equation in the relaxation-time approximation. Our calculated mobility is in agreement with experimental values. We also find the lowest alloy-scattering electron mobility (total electron mobility) across the entire composition range to be 186 cm2/V s (136 cm2/V s), which is comparable to the highest electron mobility predicted in the competitor system, β-(AlxGa1−x)2O3. Our results elucidate the intrinsic limits imposed by alloy disorder on electron transport in AlxGa1−xN.
Observation of time-reversal symmetry breaking in the band structure of altermagnetic RuO 2
Altermagnets are an emerging elementary class of collinear magnets. Unlike ferromagnets, their distinct crystal symmetries inhibit magnetization while, unlike antiferromagnets, they promote strong spin polarization in the band structure. The corresponding unconventional mechanism of time-reversal symmetry breaking without magnetization in the electronic spectra has been regarded as a primary signature of altermagnetism but has not been experimentally visualized to date. We directly observe strong time-reversal symmetry breaking in the band structure of altermagnetic RuO 2 by detecting magnetic circular dichroism in angle-resolved photoemission spectra. Our experimental results, supported by ab initio calculations, establish the microscopic electronic structure basis for a family of interesting phenomena and functionalities in fields ranging from topological matter to spintronics, which are based on the unconventional time-reversal symmetry breaking in altermagnets.
Ultraviolet optical properties and electronic band structure of magnesium oxide.
UV optical properties and electronic band structure of magnesium oxide